CN114631174A - 基片清洗装置和基片清洗方法 - Google Patents

基片清洗装置和基片清洗方法 Download PDF

Info

Publication number
CN114631174A
CN114631174A CN202080073660.6A CN202080073660A CN114631174A CN 114631174 A CN114631174 A CN 114631174A CN 202080073660 A CN202080073660 A CN 202080073660A CN 114631174 A CN114631174 A CN 114631174A
Authority
CN
China
Prior art keywords
substrate
gas
nozzle cover
nozzle
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080073660.6A
Other languages
English (en)
Inventor
中岛常长
饱本正巳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114631174A publication Critical patent/CN114631174A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
    • B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
    • B05B9/03—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明能够防止从基片除去的颗粒再次附着于基片。本发明的基片清洗装置包括：保持基片的基片保持部；对基片保持部上的基片喷射清洗气体的气体喷嘴；和以包围气体喷嘴的方式设置的喷嘴罩。从气体喷嘴对喷嘴罩的减压室内喷射清洗气体，在减压室内生成除去基片上的颗粒的气体团簇。在基片保持部的保持部支承件将气帘用气体向喷嘴罩侧喷射，在喷嘴罩与保持部支承件之间形成气帘。

Description

基片清洗装置和基片清洗方法
技术领域
本发明涉及基片清洗装置和基片清洗方法。
背景技术
在半导体制造装置中，制造工序中颗粒对基片的附着是大幅影响产品的成品率的因素之一。为此，在对基片进行处理之前或之后对基片进行清洗，但人们希望开发能够抑制对基片的损伤且以简易方法可靠地除去颗粒的清洗技术。人们对施加颗粒与基片之间的附着力以上的物理剪切力而从基片的表面剥离颗粒的各种清洗技术进行了研究、开发，作为其中之一，能够举出利用气体团簇(gas cluster)的物理剪切力的技术。
气体团簇是将高压的气体向由减压室等形成的真空中喷出，通过绝热膨胀将气体冷却至冷凝温度，由此多个原子或分子聚集而成的块(团簇)。在基片清洗时，使该气体团簇直接或适当加速地照射于基片而除去颗粒。
另外，现有技术中开发了一种有效地除去附着于基片表面的图案内的颗粒的技术(参照专利文献1)。
在这样的情况下，只要能够防止从基片除去的颗粒被扬起而再次附着于基片，就能够更有效地清洗基片。
现有技术文献
专利文献
专利文献1：日本特开2013-175681号公报
发明内容
发明要解决的技术问题
本发明是考虑到上述内容而完成的，提供能够防止从基片除去的颗粒再次附着于基片的基片清洗装置和基片清洗方法。
用于解决技术问题的技术方案
本发明为基片清洗装置，其包括：保持基片的基片保持部；喷嘴罩，具有在其与所述基片之间形成减压气氛的减压室；和气体喷嘴，其喷射比所述减压室的压力高的清洗气体，生成在所述减压室内清洗所述基片的气体团簇，所述喷嘴罩包括具有所述减压室的喷嘴罩主体和位于所述喷嘴罩主体的下端周缘的周缘部，在所述基片保持部侧设置有对所述周缘部喷出气帘用气体而形成气帘的气帘形成部。
发明效果
依照本发明，能够防止从基片除去的颗粒再次附着于基片。
附图说明
图1是表示本实施方式的基片清洗装置的侧视图。
图2是表示图1所示的基片清洗装置的气体喷嘴和喷嘴罩的侧视图。
图3是表示基片清洗装置的作用的侧视图。
图4的(a)～(d)是表示利用气体团簇除去颗粒的情形的侧视图。
图5的(a)～(d)是表示利用气体团簇除去颗粒的情形的侧视图。
图6是表示晶片的表面的俯视图。
图7是表示组装有基片清洗装置的真空处理装置的整体的图。
图8是表示气体流路的变形例的图，是与图2对应的图。
图9是表示基片保持部的变形例的图。
具体实施方式
<本实施方式>
首先，利用图7对组装有本实施方式的基片清洗装置的真空处理装置整体进行说明。图7是表示作为多腔室系统的真空处理装置101的整体结构的俯视图。在真空处理装置101中，例如横向排列地配置有例如3处送入送出口112，其用于载置收纳有25个作为基片的半导体晶片(以下称为“晶片”)W的密闭型的输送容器即FOUP111。此外，以沿着这些送入送出口112的队列的方式设置有大气输送室113，在大气输送室113的正面壁安装有能够与上述FOUP111的盖一起开闭的闸门GT。
在大气输送室113中的送入送出口112的相反侧的面，气密地连接有例如2个装载锁定室114、115。在这些装载锁定室114、115分别设置有未图示的真空泵和泄漏阀，构成为能够切换常压气氛和真空气氛。此外，在图10中，设有闸阀(分隔阀)G。此外，在大气输送室113内设置有由用于输送晶片W的多关节臂构成的第一基片输送机构116。进而，从大气输送室113的正面侧观察背面侧，在大气输送室113的右侧壁设置有作为基片检查部的晶片检查部117，在左侧壁设置有进行晶片W的朝向、偏心的调整的对准室118。上述第一基片输送机构116具有对FOUP111、装载锁定室114、115、晶片检查部117和对准室118进行晶片W的交接的作用。因此，第一基片输送机构116构成为例如沿FOUP 111的排列方向(图1中X方向)可移动、可升降、可绕铅垂轴旋转以及可进退的。
当从大气输送室113观察时，在装载锁定室114、115的里侧气密地连接有真空输送室102。此外，在真空输送室102气密地连接有本实施方式的基片清洗装置100和5个真空处理模块121～125。这些真空处理模块121～125成为真空处理模块，其对例如形成有用于形成电路图案的凹部即铜配线埋入用的槽和通孔的晶片W进行包含铜配线的成膜用的CVD(Chemical Vapor Deposition：化学气相沉积)处理、溅射处理。
另外，真空输送室102包括在真空气氛下进行晶片W的输送的第二基片输送机构126，利用该第二基片输送机构126对装载锁定室114、115、基片洗清装置100、真空处理模块121～125进行晶片W的交接。第二基片送运机构126包括构成为可绕铅垂轴旋转且可进退的多关节臂126a，该多关节臂126a构成为利用基座126b而能够在长度方向(图1中Y方向)上移动。
接着，对晶片检查部117进行说明。晶片检查部117用于对附着于晶片W的颗粒获取包含粒径的颗粒信息。上述颗粒信息例如是用于获知晶片W上的颗粒的位置及其大小的信息。作为晶片检查部117，能够使用可评价晶片表面的颗粒的粒径的装置，例如使用能够利用正反射光、散射光的光学式或电子射线式的表面缺陷检查装置。此外，也可以使用扫描型电子显微镜(SEM)、扫描型隧道显微镜(STM)、原子力显微镜(AFM)等扫描型探针显微镜。
接着，对本实施方式的基片清洗装置100进行说明。基片清洗装置100用于将晶片W收纳于内部而进行附着物的除去处理。
如图1至图3所示，基片清洗装置100包括：清洗处理室31；基片保持部11，其配置于清洗处理室31内，将在水平方向上配置的晶片W以可旋转的方式保持；气体喷嘴50，其对基片保持部11上的晶片W喷射清洗气体；和喷嘴罩20，其以包围气体喷嘴50的方式设置，具有在与晶片W之间形成减压气氛的减压室20A。
其中，清洗处理室31相对于外部气体形成为正压，在清洗处理室31内的上部设置有供给洁净气体的洁净气体供给部40，在该洁净气体供给部40经由气体供给通路41与气体供给源42连接。
另外，在清洗处理室31内的下部经由排气通路43连接有排气风扇等排气机构44。此外，在清洗处理室31的侧壁形成有用于送入或送出晶片W的开口34，该开口34被门35可开闭地密闭。
另外，基片保持部11具有：保持部主体11A，其保持在水平方向上配置的晶片W；和保持部支承件12，其设置于保持部主体11A的外周，从侧方包围晶片W的外周，保持部主体11A和保持部支承件12能够利用由驱动电机14驱动的驱动轴13一体地旋转。
另外，气体喷嘴50如后述那样对晶片W喷射二氧化碳(CO2)气体和氦(He)气，以包围该气体喷嘴50的方式设置有喷嘴罩20。
具体而言，如图1至图3所示，喷嘴罩20具有翻过来的杯形形状，包括在内部具有减压室20A的喷嘴罩主体21，和在该喷嘴罩主体21的下端周缘延伸的周缘部22，在该杯形形状的喷嘴罩主体21以贯通其中央部的方式安装有气体喷嘴50。
喷嘴罩20的喷嘴罩主体21和周缘部22一体地形成，整体由陶瓷制成。
另外，包括喷嘴罩主体21和周缘部22的喷嘴罩20以覆盖晶片W的整个区域的方式设置。
特别的是，如后所述，喷嘴罩20利用移动臂17能够相对于晶片W移动，在此期间喷嘴罩20的减压室20A从晶片W的中心移动至晶片W的周缘。在此情况下，在减压室20A从晶片W的中心移动至晶片W的周缘的期间，喷嘴罩20总是能够覆盖晶片W的整个区域。由此，防止从晶片W上被清洗掉而排出的颗粒向喷嘴罩20的外侧飞散。
另外，基片保持部11中、保持部支承件12的喷嘴罩20侧的端部12A，具有将从后述的气体流路15供给的N2气体或空气等气帘用气体向喷嘴罩20侧喷射的喷射孔。例如，通过基片保持部11的保持部支承件12使用多孔材料，构成为保持部支承件12的喷嘴罩20侧的端部12A具有多个孔，将该孔作为喷射孔将气帘用气体向喷嘴罩20侧喷射。由此，处于保持部支承件12的喷嘴罩20侧的端部12A的孔作为在保持部支承件12与喷嘴罩20之间形成气帘的气帘形成部发挥作用。
另外，通过与气帘用气体供给源16连接的气体流路15对保持部支承件12供给包括N2气体或空气的气帘用气体。气体流路15如图2所示可以从驱动轴13直接配置至保持部支承件12，也可以如图8所示，构成为通过中空地构成的驱动轴13和基片保持部11内。
另外，在喷嘴罩20的喷嘴罩主体21，与气体喷嘴50相邻地设置有在喷嘴罩20的减压室20A内形成减压气氛的减压生成部24，该减压生成部24经由连结管线28与减压泵27连接。在该情况下，连结管线28贯通清洗处理室31的壁面而延伸，到达设置于清洗处理室31的外侧的减压泵27。
另外，气体喷嘴50由喷嘴罩20的喷嘴罩主体21保持，该气体喷嘴50与喷嘴罩20一起利用配置于清洗处理室31内的移动臂17而能够在清洗处理室31内在水平方向上移动。在本实施方式中，利用该移动臂17，气体喷嘴50和喷嘴罩20能够在由基片保持部11保持的晶片W上从晶片W的中心向周缘、或者从晶片W的周缘向中心地移动。
另外，气体喷嘴50的出口50a侧的直径扩大，出口50a前端的外径L1例如为10mm，喷嘴罩20的减压室20A的晶片W侧的端部的外径L2例如为50～60mm。
如图1至图3所示，保持晶片W的基片保持部11具有保持部主体11A和设置于保持部主体11A的外周且从侧方包围晶片W的外周的保持部支承件12，其中保持部主体11A为SUS制、铝制或陶瓷制的，其表面的摩擦系数高。因此，仅通过在保持部主体11A上载置晶片W，就能够不设置吸附机构而在保持部主体11A上稳定地保持晶片W。
另外，保持部支承件12由陶瓷等多孔材料构成，保持部支承件12的上表面优选处于与保持部主体11A的上表面相同的面上。此时，仅在保持部支承件12中的与喷嘴罩20的周缘部22相对的部分使陶瓷等多孔材料露出，对保持部主体11A的其它部分实施涂层，或在其它部分贴附非多孔的材料，而从与周缘部22相对的部分供给气帘用气体。或者，作为保持部支承件12，除陶瓷材料以外，能够使用SUS制材料或铝制材料，保持部支承件12能够通过对这些陶瓷材料、SUS制材料、或铝制材料进行机械加工而得到。
另外，如图1所示，在气体喷嘴50连接有贯通清洗处理室31的壁面而延伸的连结管线50A的一端侧。在清洗处理室31内，连结管线50A具有柔软构造，能够跟随气体喷嘴50的移动。此外，该连接线50A在清洗处理室31的外侧经由构成压力调节部的压力调节阀51与二氧化碳(CO2)气体的供给通路52和氦(He)气的供给通路53连接。供给通路52具有开闭阀V1、二氧化碳气体流量调节部52a和二氧化碳气体的供给源52b，供给通路53具有开闭阀V2、氦气流量调节部53a和氦气的供给源53b。
二氧化碳气体是清洗用的气体(清洗气体)，利用该气体形成气体团簇。此外，氦气是推挤用的气体(推挤气体)。氦气难以形成团簇，当在二氧化碳气体中混合氦气时，具有提高由二氧化碳气体生成的团簇的速度的作用。此外，在连结管线50A设置有检测连结管线50A内的压力的压力检测部54，基于该压力检测部54的检测值，利用后述的控制部55调节压力调节阀51的开度，控制减压室20A内的气体压力。
另外，也可以基于上述压力检测部54的检测值，控制部55控制二氧化碳气体流量调节部52a和氦气流量调节部53a来调节气体流量。而且，也可以在各气体的开闭阀V1、V2与压力调节阀51之间使用例如气体增压器(gas booster)等升压机构使供给压力上升，利用压力调节阀51进行调节。
另外，在真空处理装置101中，如图1和图3所示，设置有用于进行装置整体的动作的控制的、例如由计算机构成的控制部55。该控制部55包括CPU、程序、存储部。上述程序编入有步骤组，以使得除了执行后述的清洗处理之外，还以执行与由真空处理模块121～125进行的真空处理对应的装置的动作。程序例如存储于硬盘、光盘、磁光盘、存储卡、软盘等存储介质中，从其安装到控制部55内。
另外，在控制部55的存储部中存储有由上述晶片检查部117获取到的颗粒信息。该颗粒信息是指将晶片W的位置与颗粒的尺寸相关联的信息。颗粒的尺寸例如是根据由晶片检查部117设定的颗粒的粒径的范围而分配的值，例如按照20nm以上且小于40nm、40nm以上且小于60nm的值来规定尺寸。
下面，对像这样构成的本实施方式的作用进行说明。
当将FOUP111载置于图7所示的送入送出口112时，利用第一基片输送机构116从该FOUP111取出晶片W。在该晶片W形成有作为图案凹部的铜配线埋入用的凹部(槽和通孔)。接着，晶片W经由常压气氛的大气输送室113被输送到对准室118，进行对准。之后，晶片W被第一基片输送机构116输送至晶片检查部117，在此获取颗粒信息。所获取的颗粒信息被发送到控制部55。
由晶片检查部117进行了检查的晶片W被第一基片输送机构116送入设定成常压气氛的装载锁定室114、115。在装载锁定室114、115内的气氛被切换为真空气氛后，由第二基片输送机构126输送到基片清洗装置100，进行颗粒的除去处理。
如图1至图3所示，在基片清洗装置100中，首先，从基片保持部11的保持部支承件12中、喷嘴罩20侧的端部，对喷嘴罩20喷射经由气体流路15供给的N2气体或空气等气帘用气体(参照图1)。对喷嘴罩20喷射的气帘用气体在保持部支承件12与喷嘴罩20的周缘部22之间形成气帘12B，将喷嘴罩20的减压室20A内与外部之间密封。
在此期间，减压泵27动作，利用减压生成部24对喷嘴罩20的减压室20A内进行减压，减压室20A内与喷嘴罩20的外部相比被减压。
之后，从气体喷嘴50对喷嘴罩20的减压室20A内供给二氧化碳气体作为清洗用的气体，并且对喷嘴罩20的减压室20A内供给氦气作为推挤用的气体。
在该情况下，通过从气体喷嘴50的出口50a向减压室20A内喷出作为清洗用气体的二氧化碳气体，能够在减压室20A生成气体团簇，能够使用该气体团簇除去存在于晶片W上的颗粒1(参照图6)。
在本实施方式中，从保持部支承件12的喷嘴罩20侧的端部喷射的气帘用气体的喷射量M1比从减压室20A经由减压生成部24排出的排气量M2大，例如为M1＝10～30L/min的喷射量、M2＝M1×1～2倍的排气量。
在此，对使用气体团簇从晶片W表面除去颗粒的原理进行说明。气体团簇是指，从与喷嘴罩20的减压室20A相比压力高的区域向处理气氛供给气体，通过绝热膨胀而冷却至气体的冷凝温度，由此气体的原子或分子作为集合体聚集而生成的物质。例如将喷嘴罩20的减压室20A中的处理压力设定为例如0.1～100Pa的真空气氛，并且对气体喷嘴50以例如0.3～5.0MPa的压力供给清洗用的气体(二氧化碳气体)。该清洗用的气体在被供给至喷嘴罩20的减压室20A的处理气氛时，由于急剧的绝热膨胀而被冷却至冷凝温度以下，因此如图2和图3所示，各分子2a彼此在气体喷嘴50的出口50a侧由于范德华力结合，成为作为集合体的气体团簇2。气体团簇2在本例中为中性的。例如关于气体团簇，5×103原子(分子)/团簇为8nm左右，因此优选为5×103原子(分子)/团簇以上。
在气体喷嘴50的出口50a侧生成的气体团簇2向晶片W垂直地照射。然后，进入用于晶片W的电路图案的凹部内，吹飞该凹部内的颗粒1以将其除去。
图4的(a)～(d)和图5的(a)～(d)示意性地表示晶片W上的颗粒1被气体团簇2除去的情况。图4的(a)～(d)是表示气体团簇2与晶片W上的颗粒1碰撞的情况的图。在该情况下，气体团簇2如图4的(a)所示垂直地照射到晶片W的表面，例如从斜上方侧与颗粒1碰撞的可能性高。当气体团簇2如图4的(b)所示以偏移的状态(从上方观察时气体团簇2的中心与颗粒1的中心错开的状态)与颗粒1碰撞时，如图4的(c)所示，气体团簇2的碰撞时的冲击对颗粒1施加向横向移动的力。其结果是，颗粒1从晶片W表面剥离、浮起、向侧方或斜上方飞起。
另外，气体团簇2不与颗粒1直接碰撞，而是如图5的(a)所示，通过照射在颗粒1的附近，也能够除去该颗粒1。气体团簇2在与晶片W碰撞时，气体团簇2的构成分子一边在横向上扩散一边逐渐分解(参照图8的(b))。此时，高动能密度区域在横向(水平方向)上移动，因此，将颗粒1从晶片W剥离、吹走(参照图5的(c)、(d))。这样，颗粒1从凹部飞出而向喷嘴罩20的减压室20A内飞散，经由减压生成部24从设置于清洗处理室31的外部的减压泵27向外侧被除去。
如上所述，在一边从气体喷嘴50对晶片W喷射二氧化碳气体和氦气一边生成气体团簇2，使用气体团簇除去晶片W上的颗粒1的期间，基片保持部11转动而使晶片W旋转，利用移动臂17使气体喷嘴50和喷嘴罩20在晶片W上从晶片W的中心移动至周缘。由此，能够在晶片W的整个区域利用气体团簇2有效地除去晶片W上的颗粒1。
在此期间，当气体喷嘴50处于从晶片W的中心至周缘之间时(参照图1和图2)，从保持部支承件12的喷嘴罩20侧的端部喷射的气帘用气体去往喷嘴罩，在保持部支承件12与喷嘴罩20之间的间隙G(例如0.85mm)形成气帘12B，将喷嘴罩20的减压室20A内保持为密封状态。
接着，在气体喷嘴50到达晶片W的周缘时(参照图3)，将从保持部支承件12的喷嘴罩20侧端部喷射的气帘用气体的一部分对喷嘴罩20喷射，其余部分也进入减压室20A内。但是，进入减压室20A内的气帘用气体的流量很少，不会对减压室20A的减压气氛造成影响。
在该情况下，从保持部支承件12的喷嘴罩20侧端部喷射的气帘用气体，在保持部支承件12的喷嘴罩20侧端部与喷嘴罩20之间的间隙G形成气帘12B，将喷嘴罩20的减压室20A内保持为密封状态。
在本实施方式中，保持部支承件12由未图示的固定螺纹件固定于保持部主体11A，能够根据晶片W的厚度来调节保持部支承件12的高度位置。在图3中，调节保持部支承件12的高度位置，而使得保持部主体11A上的晶片W的上表面位于与保持部支承件12的上表面相同的平面上，晶片W的上表面的高度与保持部支承件12的上表面一致。
因此，保持部支承件12的喷嘴罩20侧的端部与喷嘴罩20之间的间隙G，和晶片W与喷嘴罩20的间隙是一致的。
如上所述，依照本实施方式，利用基片保持部11使晶片W旋转，利用移动臂17使气体喷嘴50和喷嘴罩20从晶片W的中心向周缘移动，由此能够在晶片W的整个区域使用气体团簇2除去晶片W上的颗粒1。此外，通过将气体喷嘴50和喷嘴罩20固定在晶片W的周缘，利用基片保持部11使晶片W旋转，能够使用气体团簇2除去位于晶片W的周缘的颗粒1。
另外，从气体喷嘴50对喷嘴罩20的减压室20A内供给二氧化碳气体和氦气来生成气体团簇2，使用该气体团簇2除去晶片W上的颗粒1，并且将被除去的颗粒1从减压室20A向外侧排出。因此，从晶片W除去的颗粒1不会被扬起而再次附着在晶片W的其它部分，能够将晶片W整体保持清洁。
特别的是，喷嘴罩20利用移动臂17能够相对于晶片W移动，在使用气体团簇2除去晶片W上的颗粒1时，喷嘴罩20的减压室20A从晶片W的中心移动至晶片W的周缘。在此情况下，在减压室20A从晶片W的中心移动至晶片W的周缘的期间，总是由喷嘴罩20覆盖晶片W的整个区域，防止从晶片W上被清洗而被排出的颗粒1向喷嘴罩20的外侧飞散，因此能够可靠地防止扬起的颗粒1再次附着于晶片W。
另外，在上述实施方式中，示出了作为清洗用气体使用二氧化碳气体，作为推挤用气体使用氦气的例子，但不限于此，也可以使用氩气等作为清洗用气体，使用氢气等作为推挤用气体。当使用二氧化碳气体与氢气的组合时，能够以比较廉价的气体得到高清洗效果。
另外，表示了从喷嘴罩20的晶片W侧的端部21A对晶片W喷射如N2气体或空气这样的气帘用气体的例子，但不限于此，也可以使用对生成气体团簇的作用无影响的其他气体。
另外，在上述的实施方式中，示出了气体喷嘴50和喷嘴罩20利用移动臂17在由基片保持部11保持的晶片W上移动的例子，但气体喷嘴50和喷嘴罩20只要是能够在晶片W上相对移动的结构即可。例如，如图9所示，也可以设置具有驱动部60a和驱动臂60b的驱动机构60，并且在驱动臂60b连结基片保持部11。在该情况下，一边利用驱动电机14使基片保持部11旋转，使保持于基片保持部11的晶片W旋转，一边利用驱动机构60使基片保持部11在水平方向上移动，由此即使不使气体喷嘴50和喷嘴罩20移动也能够清洗晶片W整个面。
附图标记说明
1 颗粒
2 气体团簇
11 基片保持部
11A 保持部主体
12 保持部支承件
13 驱动轴
14 驱动电机
15 气体流路
16 气帘用气体供给源
20 气体罩
21 气体罩主体
22 周缘部
24 减压生成部
27 减压泵
28 连结管线
31 清洗处理室
40 洁净气体供给部
41 气体供给通路
42 气体供给源
43 排气通路
44 排气机构
50 气体喷嘴
60 驱动机构
100 基片清洗装置。

Claims (9)

1.一种基片清洗装置，其特征在于，包括：
保持基片的基片保持部；
喷嘴罩，具有在其与所述基片之间形成减压气氛的减压室；和
气体喷嘴，其喷射比所述减压室的压力高的高压的清洗气体，在所述减压室内生成清洗所述基片的气体团簇，
所述喷嘴罩包括具有所述减压室的喷嘴罩主体和位于所述喷嘴罩主体的下端周缘的周缘部，在所述基片保持部侧设置有对所述周缘部喷出气帘用气体而形成气帘的气帘形成部。
2.如权利要求1所述的基片清洗装置，其特征在于：
所述喷嘴罩覆盖所述基片的整个区域。
3.根据权利要求2所述的基片清洗装置，其特征在于：
所述气体喷嘴能够相对于所述基片保持部在水平方向上相对移动，在所述减压室从所述基片的中心移动至周缘的期间，所述喷嘴罩覆盖所述基片的整个区域。
4.根据权利要求1至3中任一项所述的基片清洗装置，其特征在于：
所述基片保持部具有：保持所述基片的保持部主体；和保持部支承件，其设置于所述保持部主体的外周并包围所述基片的外周，
在所述保持部支承件设置有所述气帘形成部，在该保持部支承件连接有与所述气帘形成部连通并且向所述气帘形成部侧供给气帘用气体的气体流路。
5.根据权利要求4所述的基片清洗装置，其特征在于：
所述保持部支承件由多孔材料构成。
6.根据权利要求4或5所述的基片清洗装置，其特征在于：
所述保持部主体上的所述基片的上表面与所述保持部支承件的上表面处于同一平面上。
7.根据权利要求1至6中任一项所述的基片清洗装置，其特征在于：
在所述喷嘴罩设置有使所述减压室内成为减压气氛的减压生成部。
8.根据权利要求1至7中任一项所述的基片清洗装置，其特征在于：
所述基片保持部能够旋转，所述气体喷嘴和所述基片保持部能够在水平方向上相对移动。
9.一种基片清洗方法，其特征在于：
所述基片清洗方法使用基片清洗装置，
所述基片清洗装置包括：保持基片的基片保持部；和喷嘴罩，具有在其与所述基片之间形成减压气氛的减压室，
所述喷嘴罩包括具有所述减压室的喷嘴罩主体和位于所述喷嘴罩主体的下端周缘的周缘部，
所述基片清洗方法包括：
从设置于所述基片保持部的气帘形成部对所述周缘部喷出气帘用气体而形成气帘的步骤；和
从气体喷嘴喷射比所述减压室的压力高的高压的清洗气体，在所述减压室内生成清洗所述基片的气体团簇的步骤。
CN202080073660.6A 2019-11-01 2020-10-19 基片清洗装置和基片清洗方法 Pending CN114631174A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019200157 2019-11-01
JP2019-200157 2019-11-01
PCT/JP2020/039244 WO2021085212A1 (ja) 2019-11-01 2020-10-19 基板洗浄装置および基板洗浄方法

Publications (1)

Publication Number Publication Date
CN114631174A true CN114631174A (zh) 2022-06-14

Family

ID=75715975

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080073660.6A Pending CN114631174A (zh) 2019-11-01 2020-10-19 基片清洗装置和基片清洗方法

Country Status (5)

Country Link
US (1) US20220389574A1 (zh)
JP (1) JP7334258B2 (zh)
KR (1) KR20220093150A (zh)
CN (1) CN114631174A (zh)
WO (1) WO2021085212A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115103501A (zh) * 2022-06-22 2022-09-23 西北核技术研究所 环形构型气体团簇发生装置及环形构型氪气团簇制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240065268A (ko) * 2021-09-13 2024-05-14 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206521A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 洗浄装置
JPH1056004A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 有機物除去装置
US20060081174A1 (en) * 2004-10-15 2006-04-20 Doben Limited Vacuum nozzle for spray system
JP2007036121A (ja) * 2005-07-29 2007-02-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4802002B2 (ja) * 2006-01-30 2011-10-26 芝浦メカトロニクス株式会社 基板の洗浄処理装置及び洗浄処理方法
TWI378502B (en) * 2006-06-12 2012-12-01 Semes Co Ltd Method and apparatus for cleaning substrates
TWI593048B (zh) * 2009-07-21 2017-07-21 尼康股份有限公司 Substrate processing system, substrate holder, substrate holder pair, substrate bonding apparatus, and device manufacturing method
JP5984424B2 (ja) * 2012-02-27 2016-09-06 国立大学法人京都大学 基板洗浄方法、基板洗浄装置及び真空処理装置
US9691641B2 (en) * 2012-12-13 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method of cleaning wafers
JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP6715019B2 (ja) * 2016-02-09 2020-07-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9887122B2 (en) * 2016-05-06 2018-02-06 Lam Research Ag Method and apparatus for processing wafer-shaped articles
JP6670674B2 (ja) * 2016-05-18 2020-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9738977B1 (en) * 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
CN106761653B (zh) * 2017-01-12 2023-03-14 中为(上海)能源技术有限公司 用于煤炭地下气化工艺的喷头设备及其操作方法
KR20200121829A (ko) * 2018-02-19 2020-10-26 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. 제어 가능한 빔 크기를 갖는 처리 스프레이를 가지는 마이크로전자 처리 시스템
US20190300999A1 (en) * 2018-04-02 2019-10-03 Tokyo Electron Limited Method of forming metallic film
US11309178B2 (en) * 2018-11-15 2022-04-19 Tel Manufacturing And Engineering Of America, Inc. Treatment systems with repositionable nozzle useful in the manufacture of microelectronic devices
KR102666133B1 (ko) * 2019-01-14 2024-05-17 삼성전자주식회사 초임계 건조 장치 및 그를 이용한 기판 건조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115103501A (zh) * 2022-06-22 2022-09-23 西北核技术研究所 环形构型气体团簇发生装置及环形构型氪气团簇制备方法

Also Published As

Publication number Publication date
US20220389574A1 (en) 2022-12-08
JP7334258B2 (ja) 2023-08-28
KR20220093150A (ko) 2022-07-05
WO2021085212A1 (ja) 2021-05-06
JPWO2021085212A1 (zh) 2021-05-06

Similar Documents

Publication Publication Date Title
US10049899B2 (en) Substrate cleaning apparatus
US9099298B2 (en) Substrate cleaning apparatus and substrate cleaning method
US9960056B2 (en) Substrate cleaning method, substrate cleaning apparatus and vacuum processing system
JP4954728B2 (ja) ゲートバルブの洗浄方法及び基板処理システム
KR101672833B1 (ko) 세정 방법, 처리 장치 및 기억 매체
KR101768758B1 (ko) 기판 세정 방법, 기판 세정 장치 및 진공 처리 장치
US9214364B2 (en) Substrate cleaning apparatus and vacuum processing system
JP5153296B2 (ja) 基板処理装置および基板処理方法
CN114631174A (zh) 基片清洗装置和基片清洗方法
JP4584821B2 (ja) 真空処理装置及び帯状気流形成装置
JP4012190B2 (ja) 密閉容器の蓋開閉システム及び開閉方法
US20150027501A1 (en) Substrate cleaning method and substrate cleaning apparatus
KR102629526B1 (ko) 기판 처리 장치 및 기판 처리 방법
CN114585454A (zh) 基片清洗装置和基片清洗方法
KR20130011969A (ko) 열처리 장치
JP2019102727A (ja) 基板搬入出装置、基板処理装置及び基板搬送容器の除電方法
KR100875881B1 (ko) 반도체 웨이퍼를 건식으로 세정하는 건식 세정장치
US11177150B2 (en) Cluster tool and method using the same
KR100839189B1 (ko) 반도체 제조장치 및 반도체 제조장치의 공정챔버에 기판을이송하는 방법
CN115938979A (zh) 基片处理装置和基片处理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination