CN114631174A - Substrate cleaning apparatus and substrate cleaning method - Google Patents

Substrate cleaning apparatus and substrate cleaning method Download PDF

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Publication number
CN114631174A
CN114631174A CN202080073660.6A CN202080073660A CN114631174A CN 114631174 A CN114631174 A CN 114631174A CN 202080073660 A CN202080073660 A CN 202080073660A CN 114631174 A CN114631174 A CN 114631174A
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China
Prior art keywords
substrate
gas
nozzle cover
nozzle
wafer
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CN202080073660.6A
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Chinese (zh)
Inventor
中岛常长
饱本正巳
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
    • B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
    • B05B9/03—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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Abstract

The present invention can prevent particles removed from the substrate from being reattached to the substrate. The substrate cleaning apparatus of the present invention comprises: a substrate holding section for holding a substrate; a gas nozzle for spraying a cleaning gas to the substrate on the substrate holding portion; and a nozzle cover disposed in a manner to surround the gas nozzle. A cleaning gas is jetted from a gas nozzle into a decompression chamber of a nozzle cover to generate a gas cluster for removing particles on a substrate in the decompression chamber. A gas curtain is jetted to the nozzle cover side by a holding part support member of the substrate holding part, and the gas curtain is formed between the nozzle cover and the holding part support member.

Description

Substrate cleaning apparatus and substrate cleaning method
Technical Field
The present invention relates to a substrate cleaning apparatus and a substrate cleaning method.
Background
In a semiconductor manufacturing apparatus, adhesion of particles to a substrate in a manufacturing process is one of factors that greatly affect the yield of products. Therefore, the substrate is cleaned before or after the substrate is processed, but development of a cleaning technique capable of reliably removing particles by a simple method while suppressing damage to the substrate has been desired. Various cleaning techniques for peeling particles from the surface of a substrate by applying a physical shearing force equal to or more than the adhesion force between the particles and the substrate have been studied and developed, and one of them is a technique using a physical shearing force of a gas cluster (gas cluster).
The gas cluster is a mass (cluster) in which a plurality of atoms or molecules are aggregated by ejecting a high-pressure gas into a vacuum formed by a decompression chamber or the like and cooling the gas to a condensation temperature by adiabatic expansion. In the cleaning of the substrate, the substrate is irradiated with the gas cluster directly or with a suitable acceleration to remove particles.
In addition, a technique for effectively removing particles in a pattern attached to the surface of a substrate has been developed (see patent document 1).
In such a case, the substrate can be cleaned more effectively as long as the particles removed from the substrate can be prevented from being lifted up and reattached to the substrate.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2013-175681
Disclosure of Invention
Technical problem to be solved by the invention
The present invention has been made in view of the above, and provides a substrate cleaning apparatus and a substrate cleaning method capable of preventing particles removed from a substrate from re-adhering to the substrate.
Technical solution for solving technical problem
The present invention is a substrate cleaning apparatus, comprising: a substrate holding section for holding a substrate; a nozzle cover having a decompression chamber forming a decompression atmosphere between the nozzle cover and the substrate; and a gas nozzle for generating a gas cluster for cleaning the substrate in the decompression chamber by injecting a cleaning gas having a pressure higher than that of the decompression chamber, wherein the nozzle cover includes a nozzle cover main body having the decompression chamber and a peripheral edge portion located at a lower end peripheral edge of the nozzle cover main body, and a gas curtain forming portion for forming a gas curtain by injecting a gas curtain to the peripheral edge portion is provided on the substrate holding portion side.
Effects of the invention
According to the present invention, particles removed from the substrate can be prevented from re-attaching to the substrate.
Drawings
Fig. 1 is a side view showing a substrate cleaning apparatus according to the present embodiment.
Fig. 2 is a side view showing a gas nozzle and a nozzle cover of the substrate cleaning apparatus shown in fig. 1.
Fig. 3 is a side view showing the operation of the substrate cleaning apparatus.
Fig. 4 (a) to (d) are side views showing the case of removing particles by gas clusters.
Fig. 5 (a) to (d) are side views showing the case of removing particles by gas clusters.
Fig. 6 is a plan view showing the surface of the wafer.
Fig. 7 is a diagram showing the entire vacuum processing apparatus in which the substrate cleaning apparatus is incorporated.
Fig. 8 is a diagram showing a modification of the gas flow path, and corresponds to fig. 2.
Fig. 9 is a diagram showing a modification of the substrate holding portion.
Detailed Description
< present embodiment >
First, the entire vacuum processing apparatus equipped with the substrate cleaning apparatus of the present embodiment will be described with reference to fig. 7. Fig. 7 is a plan view showing the entire configuration of a vacuum processing apparatus 101 as a multi-chamber system. In the vacuum processing apparatus 101, for example, 3 load/unload ports 112 for loading FOUPs 111, which are closed type transport containers containing 25 semiconductor wafers (hereinafter referred to as "wafers") W as substrates, are arranged in a horizontal row. Further, an atmosphere transfer chamber 113 is provided along the queue of the inlets and outlets 112, and a shutter GT that can be opened and closed together with the lid of the FOUP111 is attached to a front wall of the atmosphere transfer chamber 113.
On the surface of the atmospheric transfer chamber 113 opposite to the loading/unloading port 112, for example, 2 load lock chambers 114 and 115 are connected in an airtight manner. The load lock chambers 114 and 115 are provided with a vacuum pump and a leak valve, not shown, respectively, and are configured to be capable of switching between a normal pressure atmosphere and a vacuum atmosphere. In fig. 10, a gate valve (partition valve) G is provided. Further, a first substrate transfer mechanism 116 composed of an articulated arm for transferring the wafer W is provided in the atmospheric transfer chamber 113. Further, a wafer inspection unit 117 as a substrate inspection unit is provided on the right side wall of the atmospheric transfer chamber 113, and an alignment chamber 118 for adjusting the orientation and eccentricity of the wafer W is provided on the left side wall, from the rear side as viewed from the front side of the atmospheric transfer chamber 113. The first substrate transfer mechanism 116 has a function of transferring the wafer W to and from the FOUP111, the load lock chambers 114 and 115, the wafer inspection unit 117, and the alignment chamber 118. Therefore, the first substrate transfer mechanism 116 is configured to be movable, liftable, rotatable about a vertical axis, and retractable, for example, in the arrangement direction (X direction in fig. 1) of the FOUPs 111.
The vacuum transfer chamber 102 is connected to the back side of the load lock chambers 114 and 115 in an airtight manner when viewed from the atmospheric transfer chamber 113. Further, the substrate cleaning apparatus 100 and 5 vacuum processing modules 121 to 125 according to the present embodiment are connected to the vacuum transfer chamber 102 in an airtight manner. These vacuum processing modules 121 to 125 are vacuum processing modules that perform CVD (Chemical Vapor Deposition) processing for forming copper wirings and sputtering processing for forming copper wirings on a wafer W having grooves and through holes for embedding copper wirings, which are recesses for forming circuit patterns, for example.
The vacuum transfer chamber 102 includes a second substrate transfer mechanism 126 for transferring the wafer W in a vacuum atmosphere, and the wafer W is transferred to and from the load lock chambers 114 and 115, the substrate cleaning apparatus 100, and the vacuum processing modules 121 to 125 by the second substrate transfer mechanism 126. The second substrate transport mechanism 126 includes an articulated arm 126a configured to be rotatable about a vertical axis and retractable, and the articulated arm 126a is configured to be movable in a longitudinal direction (Y direction in fig. 1) by a base 126 b.
Next, the wafer inspection unit 117 will be described. The wafer inspection unit 117 is used to acquire particle information including a particle diameter for particles attached to the wafer W. The particle information is information for knowing the position and size of particles on the wafer W, for example. As the wafer inspection unit 117, a device capable of evaluating the particle diameter of particles on the wafer surface, for example, an optical type or electron beam type surface defect inspection device capable of utilizing normally reflected light or scattered light can be used. Scanning probe microscopes such as Scanning Electron Microscope (SEM), Scanning Tunneling Microscope (STM), and Atomic Force Microscope (AFM) may also be used.
Next, the substrate cleaning apparatus 100 of the present embodiment will be explained. The substrate cleaning apparatus 100 is used to house a wafer W therein and perform a process of removing deposits.
As shown in fig. 1 to 3, the substrate cleaning apparatus 100 includes: cleaning the processing chamber 31; a substrate holding unit 11 disposed in the cleaning chamber 31 and rotatably holding a wafer W disposed in a horizontal direction; a gas nozzle 50 for spraying a cleaning gas to the wafer W on the substrate holding portion 11; and a nozzle cover 20 provided so as to surround the gas nozzle 50 and having a decompression chamber 20A for forming a decompression atmosphere with the wafer W.
The cleaning chamber 31 is formed to have a positive pressure with respect to the outside air, a clean gas supply unit 40 for supplying a clean gas is provided at an upper portion in the cleaning chamber 31, and the clean gas supply unit 40 is connected to a gas supply source 42 via a gas supply passage 41.
Further, an exhaust mechanism 44 such as an exhaust fan is connected to a lower portion in the cleaning chamber 31 via an exhaust passage 43. An opening 34 for carrying in and out the wafer W is formed in the side wall of the cleaning chamber 31, and the opening 34 is closed by a door 35 so as to be openable and closable.
Further, the substrate holding portion 11 includes: a holding portion main body 11A that holds a wafer W arranged in a horizontal direction; and a holding portion support 12 provided on the outer periphery of the holding portion main body 11A so as to laterally surround the outer periphery of the wafer W, the holding portion main body 11A and the holding portion support 12 being integrally rotatable by a drive shaft 13 driven by a drive motor 14.
The gas nozzle 50 injects carbon dioxide (CO) to the wafer W as described later2) A gas and helium (He) gas, and a nozzle cover 20 is provided so as to surround the gas nozzle 50.
Specifically, as shown in fig. 1 to 3, the nozzle cover 20 has an inverted cup shape, and includes a nozzle cover main body 21 having a decompression chamber 20A therein, and a peripheral edge portion 22 extending from a lower end peripheral edge of the nozzle cover main body 21, and the gas nozzle 50 is attached to the cup-shaped nozzle cover main body 21 so as to penetrate through a central portion thereof.
The nozzle cover main body 21 and the peripheral edge portion 22 of the nozzle cover 20 are integrally formed, and the entirety is made of ceramic.
The nozzle cover 20 including the nozzle cover main body 21 and the peripheral edge portion 22 is provided so as to cover the entire region of the wafer W.
Specifically, as described later, the nozzle cover 20 is movable relative to the wafer W by the moving arm 17, during which the decompression chamber 20A of the nozzle cover 20 moves from the center of the wafer W to the peripheral edge of the wafer W. In this case, the nozzle cover 20 can always cover the entire area of the wafer W while the decompression chamber 20A moves from the center of the wafer W to the peripheral edge of the wafer W. This prevents particles discharged from the wafer W after being cleaned from scattering to the outside of the nozzle cover 20.
Further, in the substrate holding section 11, an end portion 12A of the holding section support 12 on the nozzle cover 20 side has N to be supplied from a gas flow path 15 described later2And an injection hole for injecting a gas such as gas or air into the nozzle cover 20. For example, the substrate holder 11 is formed by using a porous material for the holder support 12, and the holder support 12 is formedThe end portion 12A on the nozzle cover 20 side has a plurality of holes, and the gas curtain gas is ejected toward the nozzle cover 20 side using the holes as ejection holes. Thus, the hole at the end 12A of the holder support 12 on the nozzle cover 20 side functions as an air curtain forming portion that forms an air curtain between the holder support 12 and the nozzle cover 20.
Further, the holder support member 12 is supplied with the gas including N through a gas passage 15 connected to a gas supply source 16 for gas curtain2A gas or curtain of air is used. The gas flow path 15 may be disposed directly from the drive shaft 13 to the holder support 12 as shown in fig. 2, or may be configured to pass through the drive shaft 13 and the substrate holder 11 which are hollow as shown in fig. 8.
Further, a reduced pressure generating portion 24 for forming a reduced pressure atmosphere in the reduced pressure chamber 20A of the nozzle cover 20 is provided adjacent to the gas nozzle 50 in the nozzle cover main body 21 of the nozzle cover 20, and the reduced pressure generating portion 24 is connected to a reduced pressure pump 27 via a connecting line 28. In this case, the connection line 28 extends through the wall surface of the cleaning chamber 31 and reaches the decompression pump 27 provided outside the cleaning chamber 31.
The gas nozzle 50 is held by the nozzle cover main body 21 of the nozzle cover 20, and the gas nozzle 50 is movable in the horizontal direction in the cleaning chamber 31 together with the nozzle cover 20 by the moving arm 17 disposed in the cleaning chamber 31. In the present embodiment, the gas nozzle 50 and the nozzle cover 20 are movable by the moving arm 17 from the center to the peripheral edge of the wafer W or from the peripheral edge to the center of the wafer W on the wafer W held by the substrate holding portion 11.
The diameter of the gas nozzle 50 on the outlet 50A side is enlarged, the outer diameter L1 at the tip of the outlet 50A is, for example, 10mm, and the outer diameter L2 at the end of the decompression chamber 20A on the wafer W side of the nozzle cover 20 is, for example, 50 to 60 mm.
As shown in fig. 1 to 3, the substrate holding portion 11 for holding the wafer W has a holding portion main body 11A and a holding portion support 12 provided on the outer periphery of the holding portion main body 11A and laterally surrounding the outer periphery of the wafer W, wherein the holding portion main body 11A is made of SUS, aluminum or ceramic and has a high friction coefficient on the surface thereof. Therefore, by simply placing the wafer W on the holding unit main body 11A, the wafer W can be stably held on the holding unit main body 11A without providing a suction mechanism.
The holding portion support 12 is made of a porous material such as ceramic, and the upper surface of the holding portion support 12 is preferably on the same surface as the upper surface of the holding portion main body 11A. At this time, a porous material such as ceramic is exposed only in a portion of the holding portion support 12 facing the peripheral edge portion 22 of the nozzle cover 20, and the other portion of the holding portion main body 11A is coated or a non-porous material is attached to the other portion, and a gas for curtain is supplied from a portion facing the peripheral edge portion 22. Alternatively, as the holder support 12, in addition to a ceramic material, an SUS material or an aluminum material may be used, and the holder support 12 may be obtained by machining the ceramic material, the SUS material, or the aluminum material.
As shown in fig. 1, one end side of a connecting line 50A extending through the wall surface of the cleaning chamber 31 is connected to the gas nozzle 50. In the cleaning chamber 31, the connection line 50A has a flexible structure and can follow the movement of the gas nozzle 50. The connection line 50A is connected to carbon dioxide (CO) outside the cleaning chamber 31 via a pressure regulating valve 51 constituting a pressure regulating unit2) The gas supply passage 52 and the helium (He) gas supply passage 53 are connected. The supply passage 52 includes an opening/closing valve V1, a carbon dioxide gas flow rate adjustment unit 52a, and a carbon dioxide gas supply source 52b, and the supply passage 53 includes an opening/closing valve V2, a helium gas flow rate adjustment unit 53a, and a helium gas supply source 53 b.
Carbon dioxide gas is a gas for cleaning (cleaning gas), and gas clusters are formed by the gas. Helium is a gas for pushing (pushing gas). Helium gas is difficult to form clusters, and when helium gas is mixed with carbon dioxide gas, it has an effect of increasing the speed of cluster formation by carbon dioxide gas. The connection line 50A is provided with a pressure detection unit 54 that detects the pressure in the connection line 50A, and the opening degree of the pressure adjustment valve 51 is adjusted by a control unit 55, which will be described later, based on the detection value of the pressure detection unit 54, to control the gas pressure in the decompression chamber 20A.
Further, the control unit 55 may control the carbon dioxide gas flow rate adjustment unit 52a and the helium gas flow rate adjustment unit 53a based on the detection value of the pressure detection unit 54 to adjust the gas flow rate. Further, between the on-off valves V1 and V2 for each gas and the pressure regulating valve 51, the supply pressure may be increased by using a pressure increasing means such as a gas booster (gas booster), for example, and the pressure regulating valve 51 may be used for regulation.
As shown in fig. 1 and 3, the vacuum processing apparatus 101 is provided with a control unit 55, for example, a computer, for controlling the operation of the entire apparatus. The control unit 55 includes a CPU, a program, and a storage unit. The program is programmed with a group of steps for executing the operation of the apparatus corresponding to the vacuum process performed by the vacuum process modules 121 to 125 in addition to the cleaning process described later. The program is stored in a storage medium such as a hard disk, an optical disk, a magneto-optical disk, a memory card, or a flexible disk, and is installed from the storage medium into the control section 55.
Further, the storage unit of the control unit 55 stores the grain information acquired by the wafer inspection unit 117. The grain information refers to information that relates the position of the wafer W to the size of the grains. The size of the particles is, for example, a value assigned in accordance with the range of the particle diameter of the particles set by the wafer inspection unit 117, and is defined by, for example, values of 20nm or more and less than 40nm, and 40nm or more and less than 60 nm.
Next, the operation of the present embodiment configured as described above will be described.
When the FOUP111 is placed on the carry-in/out port 112 shown in fig. 7, the wafer W is taken out from the FOUP111 by the first substrate transfer mechanism 116. The wafer W is formed with recesses (grooves and through holes) for embedding copper wiring as pattern recesses. Subsequently, the wafer W is transferred to the alignment chamber 118 through the atmospheric transfer chamber 113 in an atmospheric pressure atmosphere, and alignment is performed. Thereafter, the wafer W is conveyed by the first substrate conveyance mechanism 116 to the wafer inspection section 117, where the grain information is acquired. The acquired particle information is sent to the control section 55.
The wafer W inspected by the wafer inspection unit 117 is carried into the load lock chambers 114 and 115 set to have a normal pressure atmosphere by the first substrate transfer mechanism 116. After the atmosphere in the load lock chambers 114 and 115 is switched to the vacuum atmosphere, the substrate is conveyed to the substrate cleaning apparatus 100 by the second substrate conveying mechanism 126, and the particle removal process is performed.
As shown in fig. 1 to 3, in the substrate cleaning apparatus 100, first, N supplied through the gas flow path 15 is ejected from the end portion of the holder support 12 of the substrate holder 11 on the nozzle cover 20 side toward the nozzle cover 202Gas for air curtain such as gas or air (see fig. 1). The curtain gas injected to the nozzle cover 20 forms a curtain 12B between the holder support 12 and the peripheral edge 22 of the nozzle cover 20, and seals the inside and outside of the decompression chamber 20A of the nozzle cover 20.
During this time, the decompression pump 27 is operated to decompress the inside of the decompression chamber 20A of the nozzle cover 20 by the decompression generation section 24, and the inside of the decompression chamber 20A is decompressed compared with the outside of the nozzle cover 20.
Thereafter, carbon dioxide gas as a cleaning gas is supplied from the gas nozzle 50 into the decompression chamber 20A of the nozzle cover 20, and helium gas as a pushing gas is supplied into the decompression chamber 20A of the nozzle cover 20.
In this case, by ejecting carbon dioxide gas as a cleaning gas into the vacuum chamber 20A from the outlet 50A of the gas nozzle 50, gas clusters can be generated in the vacuum chamber 20A, and the particles 1 present on the wafer W can be removed using the gas clusters (see fig. 6).
In the present embodiment, the injection amount M1 of the curtain gas injected from the end portion of the holder support 12 on the nozzle cover 20 side is larger than the exhaust amount M2 discharged from the decompression chamber 20A via the decompression chamber 24, and is, for example, an injection amount of M1 which is 10 to 30L/min or an exhaust amount of M2 which is M1 × 1 to 2 times.
Here, a principle of removing particles from the surface of the wafer W using the gas clusters will be described. The gas cluster is a substance generated by supplying a gas from a region having a higher pressure than the decompression chamber 20A of the nozzle cover 20 to the processing atmosphere, and cooling the gas to a condensation temperature of the gas by adiabatic expansion, thereby aggregating atoms or molecules of the gas as an aggregate. For example, the processing pressure in the decompression chamber 20A of the nozzle cover 20 is set to be a vacuum atmosphere of 0.1 to 100Pa, and the nozzle is opened to the gas50 supplying a cleaning gas (carbon dioxide gas) at a pressure of, for example, 0.3 to 5.0 MPa. When the cleaning gas is supplied to the processing atmosphere in the decompression chamber 20A of the nozzle cover 20, the cleaning gas is cooled to a condensation temperature or lower due to rapid adiabatic expansion, and therefore, as shown in fig. 2 and 3, the molecules 2a are bonded to each other at the outlet 50A side of the gas nozzle 50 by van der waals force to form the gas clusters 2 as an aggregate. The gas-clusters 2 are neutral in this example. For example, with respect to gas clusters, 5X 103The number of atoms (molecules)/cluster is about 8nm, and therefore, it is preferably 5X 103Atom (molecule)/cluster.
The gas clusters 2 generated on the outlet 50a side of the gas nozzle 50 are irradiated perpendicularly to the wafer W. Then, the wafer W enters the recess for the circuit pattern of the wafer W, and the particles 1 in the recess are blown off to be removed.
Fig. 4 (a) to (d) and fig. 5 (a) to (d) schematically show the case where the particles 1 on the wafer W are removed by the gas clusters 2. Fig. 4 (a) to (d) are diagrams showing the case where the gas clusters 2 collide with the particles 1 on the wafer W. In this case, the gas clusters 2 are irradiated perpendicularly to the surface of the wafer W as shown in fig. 4 (a), and are likely to collide with the particles 1 from, for example, an obliquely upper side. When the gas cluster 2 collides with the particle 1 in a shifted state (a state in which the center of the gas cluster 2 is shifted from the center of the particle 1 when viewed from above) as shown in fig. 4 (b), the impact at the time of collision of the gas cluster 2 exerts a force that moves in the lateral direction on the particle 1 as shown in fig. 4 (c). As a result, the particles 1 are peeled off from the surface of the wafer W, float, and fly sideways or obliquely upward.
The gas cluster 2 does not directly collide with the particles 1, but the particles 1 can be removed by irradiating the vicinity of the particles 1 as shown in fig. 5 (a). When the gas clusters 2 collide with the wafer W, the constituent molecules of the gas clusters 2 gradually decompose while diffusing in the lateral direction (see fig. 8 (b)). At this time, the high kinetic energy density region moves in the lateral direction (horizontal direction), and therefore, the particles 1 are peeled off and blown off from the wafer W (see (c) and (d) of fig. 5). In this way, the pellets 1 fly out of the concave portion and scatter into the decompression chamber 20A of the nozzle cover 20, and are removed from the decompression pump 27 provided outside the cleaning processing chamber 31 to the outside through the decompression generation unit 24.
As described above, while the gas cluster 2 is generated while the carbon dioxide gas and the helium gas are injected from the gas nozzle 50 onto the wafer W and the particles 1 on the wafer W are removed using the gas cluster, the wafer W is rotated by rotating the substrate holding portion 11, and the gas nozzle 50 and the nozzle cover 20 are moved on the wafer W from the center to the peripheral edge of the wafer W by the moving arm 17. This enables the gas clusters 2 to effectively remove the particles 1 on the wafer W over the entire region of the wafer W.
During this period, when the gas nozzle 50 is positioned between the center and the peripheral edge of the wafer W (see fig. 1 and 2), the gas curtain gas ejected from the end portion of the holder support 12 on the nozzle cover 20 side goes to the nozzle cover, and the gas curtain 12B is formed in the gap G (for example, 0.85mm) between the holder support 12 and the nozzle cover 20, thereby maintaining the inside of the decompression chamber 20A of the nozzle cover 20 in a sealed state.
Next, when the gas nozzle 50 reaches the peripheral edge of the wafer W (see fig. 3), a part of the gas curtain gas ejected from the nozzle cover 20 side end portion of the holder support 12 is ejected to the nozzle cover 20, and the remaining part also enters the vacuum chamber 20A. However, the flow rate of the curtain gas entering the decompression chamber 20A is small, and the decompression atmosphere of the decompression chamber 20A is not affected.
In this case, the curtain gas ejected from the nozzle cover 20 side end portion of the holder support 12 forms the curtain 12B in the gap G between the nozzle cover 20 side end portion of the holder support 12 and the nozzle cover 20, and keeps the inside of the decompression chamber 20A of the nozzle cover 20 in a sealed state.
In the present embodiment, the holder support 12 is fixed to the holder body 11A by a fixing screw not shown, and the height position of the holder support 12 can be adjusted according to the thickness of the wafer W. In fig. 3, the height position of the holder support 12 is adjusted so that the upper surface of the wafer W on the holder main body 11A is located on the same plane as the upper surface of the holder support 12, the height of the upper surface of the wafer W coinciding with the upper surface of the holder support 12.
Therefore, the gap G between the nozzle cover 20 side end of the holder support 12 and the nozzle cover 20 and the gap between the wafer W and the nozzle cover 20 are uniform.
As described above, according to the present embodiment, the gas cluster 2 is used to remove the particles 1 on the wafer W over the entire area of the wafer W by rotating the wafer W by the substrate holding portion 11 and moving the gas nozzle 50 and the nozzle cover 20 from the center to the peripheral edge of the wafer W by the moving arm 17. Further, the gas nozzle 50 and the nozzle cover 20 are fixed to the peripheral edge of the wafer W, and the wafer W is rotated by the substrate holding portion 11, whereby the particles 1 located on the peripheral edge of the wafer W can be removed by using the gas clusters 2.
Further, carbon dioxide gas and helium gas are supplied from the gas nozzle 50 into the decompression chamber 20A of the nozzle cover 20 to generate a gas cluster 2, the particles 1 on the wafer W are removed using the gas cluster 2, and the removed particles 1 are discharged from the decompression chamber 20A to the outside. Therefore, the particles 1 removed from the wafer W are not lifted and reattached to the other portion of the wafer W, and the entire wafer W can be kept clean.
In particular, the nozzle cover 20 is movable relative to the wafer W by the moving arm 17, and when the particles 1 on the wafer W are removed using the gas cluster 2, the decompression chamber 20A of the nozzle cover 20 moves from the center of the wafer W to the peripheral edge of the wafer W. In this case, the nozzle cover 20 always covers the entire area of the wafer W while the decompression chamber 20A moves from the center of the wafer W to the peripheral edge of the wafer W, and the particles 1 discharged from the wafer W after being cleaned are prevented from scattering to the outside of the nozzle cover 20, so that the re-adhesion of the particles 1 lifted up to the wafer W can be reliably prevented.
In the above embodiment, an example in which carbon dioxide gas is used as the purge gas and helium gas is used as the extrusion gas is shown, but the present invention is not limited thereto, and argon gas or the like may be used as the purge gas and hydrogen gas or the like may be used as the extrusion gas. When a combination of carbon dioxide gas and hydrogen gas is used, a high cleaning effect can be obtained with a relatively inexpensive gas.
Further, the wafer W is sprayed with the spray N from the end 21A of the nozzle cover 20 on the wafer W side2Examples of the gas for the air curtain such as gas or air are not limited to these, andto use other gases that have no effect on the effect of generating gas-clusters.
In the above-described embodiment, the gas nozzle 50 and the nozzle cover 20 are moved by the moving arm 17 over the wafer W held by the substrate holding unit 11, but the gas nozzle 50 and the nozzle cover 20 may be configured to be relatively movable over the wafer W. For example, as shown in fig. 9, a drive mechanism 60 having a drive portion 60a and a drive arm 60b may be provided, and the substrate holding portion 11 may be connected to the drive arm 60 b. In this case, the entire surface of the wafer W can be cleaned without moving the gas nozzle 50 and the nozzle cover 20 by moving the substrate holding portion 11 in the horizontal direction by the drive mechanism 60 while rotating the substrate holding portion 11 by the drive motor 14 and rotating the wafer W held by the substrate holding portion 11.
Description of the reference numerals
1 granule
2 gas cluster
11 substrate holding part
11A holding part body
12 holder support
13 drive shaft
14 drive motor
15 gas flow path
16 gas supply source for air curtain
20 gas hood
21 gas hood body
22 peripheral edge portion
24 reduced pressure generating part
27 pressure reducing pump
28 connecting pipeline
31 cleaning process chamber
40 clean gas supply part
41 gas supply passage
42 gas supply source
43 exhaust passage
44 exhaust mechanism
50 gas nozzle
60 drive mechanism
100 substrate cleaning apparatus.

Claims (9)

1. A substrate cleaning apparatus, comprising:
a substrate holding section for holding a substrate;
a nozzle cover having a decompression chamber forming a decompression atmosphere between the nozzle cover and the substrate; and
a gas nozzle for injecting a high-pressure cleaning gas having a pressure higher than that of the decompression chamber to generate a gas cluster for cleaning the substrate in the decompression chamber,
the nozzle cover includes a nozzle cover main body having the decompression chamber and a peripheral edge portion located at a lower end peripheral edge of the nozzle cover main body, and an air curtain forming portion for forming an air curtain by ejecting air curtain gas to the peripheral edge portion is provided on the substrate holding portion side.
2. The substrate cleaning apparatus according to claim 1, wherein:
the nozzle hood covers the entire area of the substrate.
3. The substrate cleaning apparatus according to claim 2, wherein:
the gas nozzle is relatively movable in a horizontal direction with respect to the substrate holder, and the nozzle cover covers an entire area of the substrate while the decompression chamber moves from a center to a peripheral edge of the substrate.
4. The substrate cleaning apparatus according to any one of claims 1 to 3, wherein:
the substrate holding section includes: a holding portion main body for holding the substrate; and a holder support member provided to an outer periphery of the holder main body and surrounding an outer periphery of the substrate,
the holding part support is provided with the air curtain forming part, and a gas flow path which communicates with the air curtain forming part and supplies air for the air curtain to the side of the air curtain forming part is connected to the holding part support.
5. The substrate cleaning apparatus according to claim 4, wherein:
the holder support is composed of a porous material.
6. The substrate cleaning apparatus according to claim 4 or 5, wherein:
the upper surface of the substrate on the holder main body is on the same plane as the upper surface of the holder support.
7. The substrate cleaning apparatus according to any one of claims 1 to 6, wherein:
the nozzle cover is provided with a reduced pressure generating unit for making the inside of the reduced pressure chamber into a reduced pressure atmosphere.
8. The substrate cleaning apparatus according to any one of claims 1 to 7, wherein:
the substrate holding portion is rotatable, and the gas nozzle and the substrate holding portion are relatively movable in a horizontal direction.
9. A method of cleaning a substrate, comprising:
the substrate cleaning method uses a substrate cleaning apparatus,
the substrate cleaning apparatus includes: a substrate holding section for holding a substrate; and a nozzle cover having a decompression chamber forming a decompression atmosphere between the nozzle cover and the substrate,
the nozzle cover includes a nozzle cover main body having the decompression chamber and a peripheral edge portion located at a lower end periphery of the nozzle cover main body,
the substrate cleaning method comprises the following steps:
a step of forming an air curtain by ejecting air curtain gas from an air curtain forming portion provided in the substrate holding portion to the peripheral edge portion; and
and a step of ejecting a high-pressure cleaning gas having a pressure higher than the pressure of the decompression chamber from a gas nozzle to generate a gas cluster for cleaning the substrate in the decompression chamber.
CN202080073660.6A 2019-11-01 2020-10-19 Substrate cleaning apparatus and substrate cleaning method Pending CN114631174A (en)

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CN115103501A (en) * 2022-06-22 2022-09-23 西北核技术研究所 Annular-configuration gas cluster generating device and preparation method of annular-configuration krypton cluster

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JPH04206521A (en) * 1990-11-30 1992-07-28 Hitachi Ltd Cleaning device
JP2007036121A (en) * 2005-07-29 2007-02-08 Dainippon Screen Mfg Co Ltd Substrate-treating device
JP4802002B2 (en) * 2006-01-30 2011-10-26 芝浦メカトロニクス株式会社 Substrate cleaning processing apparatus and cleaning processing method
JP5984424B2 (en) 2012-02-27 2016-09-06 国立大学法人京都大学 Substrate cleaning method, substrate cleaning apparatus, and vacuum processing apparatus
JP2015026745A (en) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 Substrate cleaning method and substrate cleaning device

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Publication number Priority date Publication date Assignee Title
CN115103501A (en) * 2022-06-22 2022-09-23 西北核技术研究所 Annular-configuration gas cluster generating device and preparation method of annular-configuration krypton cluster

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