CN114616677A - 晶体管及电子设备 - Google Patents

晶体管及电子设备 Download PDF

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Publication number
CN114616677A
CN114616677A CN202080075441.1A CN202080075441A CN114616677A CN 114616677 A CN114616677 A CN 114616677A CN 202080075441 A CN202080075441 A CN 202080075441A CN 114616677 A CN114616677 A CN 114616677A
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CN
China
Prior art keywords
insulator
oxide
conductor
transistor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080075441.1A
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English (en)
Chinese (zh)
Inventor
山崎舜平
神保安弘
金川朋贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN114616677A publication Critical patent/CN114616677A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202080075441.1A 2019-11-08 2020-10-26 晶体管及电子设备 Pending CN114616677A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019203398 2019-11-08
JP2019-203398 2019-11-08
PCT/IB2020/060015 WO2021090106A1 (ja) 2019-11-08 2020-10-26 トランジスタ、および電子機器

Publications (1)

Publication Number Publication Date
CN114616677A true CN114616677A (zh) 2022-06-10

Family

ID=75849812

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080075441.1A Pending CN114616677A (zh) 2019-11-08 2020-10-26 晶体管及电子设备

Country Status (4)

Country Link
US (2) US12159941B2 (https=)
JP (2) JPWO2021090106A1 (https=)
CN (1) CN114616677A (https=)
WO (1) WO2021090106A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230048951A (ko) * 2021-10-05 2023-04-12 삼성전자주식회사 전계 효과 트랜지스터, 이를 포함한 전자 장치 및 전계 효과 트랜지스터 제조 방법
WO2023223126A1 (ja) * 2022-05-16 2023-11-23 株式会社半導体エネルギー研究所 半導体装置
TWI835504B (zh) * 2023-01-04 2024-03-11 力晶積成電子製造股份有限公司 動態隨機存取記憶體元件及其製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380558B1 (en) * 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4653949B2 (ja) * 2003-12-10 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP5091397B2 (ja) * 2005-10-27 2012-12-05 パナソニック株式会社 半導体装置
JP5043499B2 (ja) * 2007-05-02 2012-10-10 財団法人高知県産業振興センター 電子素子及び電子素子の製造方法
EP2009694A3 (en) * 2007-06-29 2017-06-21 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5755931B2 (ja) * 2010-04-28 2015-07-29 株式会社半導体エネルギー研究所 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103348464B (zh) 2011-01-26 2016-01-13 株式会社半导体能源研究所 半导体装置及其制造方法
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102410594B1 (ko) * 2015-04-30 2022-06-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 구비하는 표시 패널
JP6887243B2 (ja) 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
US20200227562A1 (en) * 2017-08-04 2020-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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Publication number Publication date
US20220376113A1 (en) 2022-11-24
JPWO2021090106A1 (https=) 2021-05-14
US12159941B2 (en) 2024-12-03
JP2025164843A (ja) 2025-10-30
US20250081539A1 (en) 2025-03-06
WO2021090106A1 (ja) 2021-05-14

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