JPWO2021090106A1 - - Google Patents
Info
- Publication number
- JPWO2021090106A1 JPWO2021090106A1 JP2021554422A JP2021554422A JPWO2021090106A1 JP WO2021090106 A1 JPWO2021090106 A1 JP WO2021090106A1 JP 2021554422 A JP2021554422 A JP 2021554422A JP 2021554422 A JP2021554422 A JP 2021554422A JP WO2021090106 A1 JPWO2021090106 A1 JP WO2021090106A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025136901A JP2025164843A (ja) | 2019-11-08 | 2025-08-20 | 記憶装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019203398 | 2019-11-08 | ||
| PCT/IB2020/060015 WO2021090106A1 (ja) | 2019-11-08 | 2020-10-26 | トランジスタ、および電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025136901A Division JP2025164843A (ja) | 2019-11-08 | 2025-08-20 | 記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021090106A1 true JPWO2021090106A1 (https=) | 2021-05-14 |
Family
ID=75849812
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021554422A Withdrawn JPWO2021090106A1 (https=) | 2019-11-08 | 2020-10-26 | |
| JP2025136901A Pending JP2025164843A (ja) | 2019-11-08 | 2025-08-20 | 記憶装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025136901A Pending JP2025164843A (ja) | 2019-11-08 | 2025-08-20 | 記憶装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US12159941B2 (https=) |
| JP (2) | JPWO2021090106A1 (https=) |
| CN (1) | CN114616677A (https=) |
| WO (1) | WO2021090106A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230048951A (ko) * | 2021-10-05 | 2023-04-12 | 삼성전자주식회사 | 전계 효과 트랜지스터, 이를 포함한 전자 장치 및 전계 효과 트랜지스터 제조 방법 |
| WO2023223126A1 (ja) * | 2022-05-16 | 2023-11-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI835504B (zh) * | 2023-01-04 | 2024-03-11 | 力晶積成電子製造股份有限公司 | 動態隨機存取記憶體元件及其製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277665A (ja) * | 2007-05-02 | 2008-11-13 | Kochi Prefecture Sangyo Shinko Center | 電子素子及び電子素子の製造方法 |
| WO2019025911A1 (ja) * | 2017-08-04 | 2019-02-07 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380558B1 (en) * | 1998-12-29 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4653949B2 (ja) * | 2003-12-10 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP5091397B2 (ja) * | 2005-10-27 | 2012-12-05 | パナソニック株式会社 | 半導体装置 |
| EP2009694A3 (en) * | 2007-06-29 | 2017-06-21 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5755931B2 (ja) * | 2010-04-28 | 2015-07-29 | 株式会社半導体エネルギー研究所 | 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法 |
| US9209314B2 (en) | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| WO2012102182A1 (en) | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN103348464B (zh) | 2011-01-26 | 2016-01-13 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| TWI602303B (zh) | 2011-01-26 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102410594B1 (ko) * | 2015-04-30 | 2022-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 구비하는 표시 패널 |
| JP6887243B2 (ja) | 2015-12-11 | 2021-06-16 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、電子機器及び半導ウエハ |
-
2020
- 2020-10-26 JP JP2021554422A patent/JPWO2021090106A1/ja not_active Withdrawn
- 2020-10-26 US US17/770,588 patent/US12159941B2/en active Active
- 2020-10-26 WO PCT/IB2020/060015 patent/WO2021090106A1/ja not_active Ceased
- 2020-10-26 CN CN202080075441.1A patent/CN114616677A/zh active Pending
-
2024
- 2024-11-22 US US18/956,568 patent/US20250081539A1/en active Pending
-
2025
- 2025-08-20 JP JP2025136901A patent/JP2025164843A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277665A (ja) * | 2007-05-02 | 2008-11-13 | Kochi Prefecture Sangyo Shinko Center | 電子素子及び電子素子の製造方法 |
| WO2019025911A1 (ja) * | 2017-08-04 | 2019-02-07 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220376113A1 (en) | 2022-11-24 |
| US12159941B2 (en) | 2024-12-03 |
| JP2025164843A (ja) | 2025-10-30 |
| CN114616677A (zh) | 2022-06-10 |
| US20250081539A1 (en) | 2025-03-06 |
| WO2021090106A1 (ja) | 2021-05-14 |
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