CN114600231A - 利用划割道图案来减少缺陷的集成电路 - Google Patents

利用划割道图案来减少缺陷的集成电路 Download PDF

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Publication number
CN114600231A
CN114600231A CN202080074719.3A CN202080074719A CN114600231A CN 114600231 A CN114600231 A CN 114600231A CN 202080074719 A CN202080074719 A CN 202080074719A CN 114600231 A CN114600231 A CN 114600231A
Authority
CN
China
Prior art keywords
wafer
mask
scribe lane
pattern
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080074719.3A
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English (en)
Chinese (zh)
Inventor
A·萨利纳斯
W·K·麦克唐纳
S·A·约翰内斯梅耶尔
R·P·勒金
S·A·迈斯纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN114600231A publication Critical patent/CN114600231A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN202080074719.3A 2019-10-04 2020-10-05 利用划割道图案来减少缺陷的集成电路 Pending CN114600231A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962910857P 2019-10-04 2019-10-04
US62/910,857 2019-10-04
US16/679,997 US11094644B2 (en) 2019-10-04 2019-11-11 Integrated circuit with scribe lane patterns for defect reduction
US16/679,997 2019-11-11
PCT/US2020/054204 WO2021067909A1 (en) 2019-10-04 2020-10-05 Integrated circuit with scribe lane patterns for defect reduction

Publications (1)

Publication Number Publication Date
CN114600231A true CN114600231A (zh) 2022-06-07

Family

ID=75274998

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080074719.3A Pending CN114600231A (zh) 2019-10-04 2020-10-05 利用划割道图案来减少缺陷的集成电路

Country Status (5)

Country Link
US (2) US11094644B2 (https=)
EP (1) EP4042474A4 (https=)
JP (1) JP2022551842A (https=)
CN (1) CN114600231A (https=)
WO (1) WO2021067909A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102846584B1 (ko) * 2020-09-09 2025-08-18 삼성전자주식회사 반도체 패키지
GB2644158A (en) * 2024-08-27 2026-03-25 Pragmatic Semiconductor Ltd Integrated circuit chip

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068954A (en) * 1998-09-01 2000-05-30 Micron Technology, Inc. Semiconductor wafer alignment methods
US20100207251A1 (en) * 2009-02-18 2010-08-19 Chen-Hua Yu Scribe Line Metal Structure
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
CN103091971A (zh) * 2011-10-27 2013-05-08 中芯国际集成电路制造(北京)有限公司 掩模板及其制造方法、以及监测掩模板雾状污染的方法
JP2013222100A (ja) * 2012-04-17 2013-10-28 Fujitsu Semiconductor Ltd レチクル、露光方法、半導体装置の製造方法
JP2015106693A (ja) * 2013-12-02 2015-06-08 旭化成エレクトロニクス株式会社 半導体ウェハ及び半導体装置の製造方法
CN109983567A (zh) * 2019-02-13 2019-07-05 长江存储科技有限责任公司 用于在半导体制造中定位图案的标记

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2292637B (en) * 1994-08-24 1998-07-22 Nec Corp Semiconductor device
JP2001332556A (ja) * 2000-05-25 2001-11-30 Hitachi Ltd 半導体装置の製造方法
US6908830B2 (en) 2003-06-23 2005-06-21 International Business Machines Corporation Method for printing marks on the edges of wafers
JP2010114130A (ja) * 2008-11-04 2010-05-20 Panasonic Corp 半導体装置及びその製造方法
JP2011061236A (ja) * 2010-11-26 2011-03-24 Renesas Electronics Corp 半導体装置
CN105336711B (zh) * 2014-06-19 2019-03-15 恩智浦美国有限公司 采用低k值介电材料的管芯边缘密封
JP2017134292A (ja) 2016-01-28 2017-08-03 三重富士通セミコンダクター株式会社 半導体装置の製造方法及びマスクの形成方法
FR3075773B1 (fr) * 2017-12-22 2020-01-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation de dispositifs semi-conducteurs et de chemins de decoupe

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068954A (en) * 1998-09-01 2000-05-30 Micron Technology, Inc. Semiconductor wafer alignment methods
US20100207251A1 (en) * 2009-02-18 2010-08-19 Chen-Hua Yu Scribe Line Metal Structure
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
CN103091971A (zh) * 2011-10-27 2013-05-08 中芯国际集成电路制造(北京)有限公司 掩模板及其制造方法、以及监测掩模板雾状污染的方法
JP2013222100A (ja) * 2012-04-17 2013-10-28 Fujitsu Semiconductor Ltd レチクル、露光方法、半導体装置の製造方法
JP2015106693A (ja) * 2013-12-02 2015-06-08 旭化成エレクトロニクス株式会社 半導体ウェハ及び半導体装置の製造方法
CN109983567A (zh) * 2019-02-13 2019-07-05 长江存储科技有限责任公司 用于在半导体制造中定位图案的标记

Also Published As

Publication number Publication date
EP4042474A1 (en) 2022-08-17
US20210398910A1 (en) 2021-12-23
US11094644B2 (en) 2021-08-17
US20210104468A1 (en) 2021-04-08
JP2022551842A (ja) 2022-12-14
WO2021067909A1 (en) 2021-04-08
EP4042474A4 (en) 2022-12-14

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