CN114503129A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN114503129A
CN114503129A CN202080069823.3A CN202080069823A CN114503129A CN 114503129 A CN114503129 A CN 114503129A CN 202080069823 A CN202080069823 A CN 202080069823A CN 114503129 A CN114503129 A CN 114503129A
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CN
China
Prior art keywords
transistor
data
insulator
circuit
oxide
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Pending
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CN202080069823.3A
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English (en)
Chinese (zh)
Inventor
石津贵彦
青木健
古谷一马
池田隆之
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN114503129A publication Critical patent/CN114503129A/zh
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00—Digital computers in general; Data processing equipment in general
    • G06F15/76—Architectures of general purpose stored program computers
    • G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
    • G06F15/7807—System on chip, i.e. computer system on a single chip; System in package, i.e. computer system on one or more chips in a single package
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
    • G06F9/38—Concurrent instruction execution, e.g. pipeline or look ahead
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/46—Multiprogramming arrangements
    • G06F9/50—Allocation of resources, e.g. of the central processing unit [CPU]
    • G06F9/5005—Allocation of resources, e.g. of the central processing unit [CPU] to service a request
    • G06F9/5011—Allocation of resources, e.g. of the central processing unit [CPU] to service a request the resources being hardware resources other than CPUs, Servers and Terminals
    • G06F9/5016—Allocation of resources, e.g. of the central processing unit [CPU] to service a request the resources being hardware resources other than CPUs, Servers and Terminals the resource being the memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2209/00—Indexing scheme relating to G06F9/00
    • G06F2209/50—Indexing scheme relating to G06F9/50
    • G06F2209/509—Offload
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Health & Medical Sciences (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Computational Linguistics (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Neurology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Algebra (AREA)
  • Databases & Information Systems (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Complex Calculations (AREA)
  • Advance Control (AREA)
CN202080069823.3A 2019-10-04 2020-09-18 半导体装置 Pending CN114503129A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019-183393 2019-10-04
JP2019183393 2019-10-04
JP2019-190753 2019-10-18
JP2019190753 2019-10-18
PCT/IB2020/058696 WO2021064502A1 (ja) 2019-10-04 2020-09-18 半導体装置

Publications (1)

Publication Number Publication Date
CN114503129A true CN114503129A (zh) 2022-05-13

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ID=75336896

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080069823.3A Pending CN114503129A (zh) 2019-10-04 2020-09-18 半导体装置

Country Status (5)

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US (1) US20220276839A1 (https=)
JP (2) JP7560469B2 (https=)
KR (1) KR102876210B1 (https=)
CN (1) CN114503129A (https=)
WO (1) WO2021064502A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115331715A (zh) * 2022-08-16 2022-11-11 中科南京智能技术研究院 一种全数字存内计算装置
CN115459776A (zh) * 2022-09-23 2022-12-09 南京模数智芯微电子科技有限公司 一种基于脉冲神经元电路的2位adc电路

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112711548B (zh) * 2021-01-11 2023-05-16 星宸科技股份有限公司 内存装置、图像处理芯片以及内存控制方法
JP7660532B2 (ja) * 2022-02-25 2025-04-11 ルネサスエレクトロニクス株式会社 半導体装置
JP7737328B2 (ja) * 2022-03-04 2025-09-10 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (20)

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US8792284B2 (en) * 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
JP2016029795A (ja) * 2014-07-18 2016-03-03 株式会社半導体エネルギー研究所 半導体装置、撮像装置及び電子機器
WO2016055894A1 (en) * 2014-10-06 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6674838B2 (ja) * 2015-05-21 2020-04-01 株式会社半導体エネルギー研究所 電子装置
JP6773453B2 (ja) * 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
KR20170061602A (ko) * 2015-11-26 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
CN108701480B (zh) * 2016-03-10 2022-10-14 株式会社半导体能源研究所 半导体装置
US9934826B2 (en) * 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10109633B2 (en) * 2016-04-27 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and authentication system
US20180018565A1 (en) * 2016-07-14 2018-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display system, and electronic device
JP2018129046A (ja) * 2017-02-08 2018-08-16 株式会社半導体エネルギー研究所 Ａｉシステム
JP2018180975A (ja) * 2017-04-14 2018-11-15 株式会社半導体エネルギー研究所 半導体装置
US11314484B2 (en) * 2017-05-19 2022-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising operation circuits and switch circuits
JP6953229B2 (ja) * 2017-08-10 2021-10-27 株式会社半導体エネルギー研究所 半導体装置
JP7004453B2 (ja) * 2017-08-11 2022-01-21 株式会社半導体エネルギー研究所 グラフィックスプロセッシングユニット
JP2019046199A (ja) * 2017-09-01 2019-03-22 株式会社半導体エネルギー研究所 プロセッサ、および電子機器
JP2019047006A (ja) * 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子機器
CN111033438B (zh) * 2017-09-06 2023-12-05 株式会社半导体能源研究所 运算装置及电子设备
US20190122104A1 (en) 2017-10-19 2019-04-25 General Electric Company Building a binary neural network architecture
JP7692828B2 (ja) * 2019-07-12 2025-06-16 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115331715A (zh) * 2022-08-16 2022-11-11 中科南京智能技术研究院 一种全数字存内计算装置
CN115459776A (zh) * 2022-09-23 2022-12-09 南京模数智芯微电子科技有限公司 一种基于脉冲神经元电路的2位adc电路

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Publication number Publication date
KR20220076458A (ko) 2022-06-08
JP2024173950A (ja) 2024-12-13
JPWO2021064502A1 (https=) 2021-04-08
WO2021064502A1 (ja) 2021-04-08
JP7560469B2 (ja) 2024-10-02
US20220276839A1 (en) 2022-09-01
KR102876210B1 (ko) 2025-10-24

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