CN114486180A - COS wavelength testing device and testing method for semiconductor laser - Google Patents
COS wavelength testing device and testing method for semiconductor laser Download PDFInfo
- Publication number
- CN114486180A CN114486180A CN202011161186.0A CN202011161186A CN114486180A CN 114486180 A CN114486180 A CN 114486180A CN 202011161186 A CN202011161186 A CN 202011161186A CN 114486180 A CN114486180 A CN 114486180A
- Authority
- CN
- China
- Prior art keywords
- heat sink
- testing
- wavelength
- cos
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000006073 displacement reaction Methods 0.000 claims abstract description 8
- 239000002390 adhesive tape Substances 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000013095 identification testing Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
Abstract
The invention relates to a COS wavelength testing device and a testing method for a semiconductor laser, belonging to the technical field of laser testing, and comprising a heat sink base and a testing frame, wherein the heat sink base is positioned below the testing frame, a testing needle is arranged on the testing frame, the testing needle is connected with the testing frame through a displacement structure, and an integrating sphere is arranged on one side of the testing frame; the heat sink base is provided with the chip heat sinks, and the plurality of chip heat sinks are pricked and tested by utilizing the displacement of the test needle, so that the problem that the COS wavelength for the semiconductor laser cannot be automatically tested is solved, the problem that one person can only use one device in a manual mode is solved, dozens of devices can finish operation by one person at present, a large amount of labor is saved, the heat sink base is controlled to act by the driving motor, and the consistency of COS wavelength test is improved.
Description
Technical Field
The invention relates to a COS wavelength testing device and a COS wavelength testing method for a semiconductor laser, and belongs to the technical field of laser materials.
Background
In the 70 s of the twentieth century, the success of continuous oscillation of a semiconductor laser at room temperature and the realization of low-loss optical fibers opened the introduction of the optoelectronic era. The semiconductor laser has a small size and a light weight. The efficiency is high. Long service life, easy modulation, low price and the like, and is widely applied to the fields of industry, medicine and military. The industrialization of the semiconductor laser is promoted, and due to the technical problems of production process and the like, the semiconductor laser has three failure modes of early failure, accidental failure and loss failure, and the problem of how to eliminate early failure products is inevitably faced in the industrial production of the semiconductor laser.
Chinese patent document CN210198679U (application number: 201921144661.6) discloses a semiconductor laser power test and light spot recognition device, which comprises a base support, wherein a first beam is arranged at the top of the base support, a second beam is arranged in the middle of the base support, an integrating sphere is fixedly installed at one end of the first beam, two semi-transparent and semi-reflective lens supports are arranged at the bottom of the integrating sphere, two ends of the semi-transparent and semi-reflective lens are respectively and fixedly connected with the two semi-transparent and semi-reflective lens supports, a laser socket is fixedly installed on the base support, a semi-transparent screen is fixedly installed at one end of the second beam, a CCD camera is fixedly installed at the other end of the second beam, and a test probe is arranged at the top of the integrating sphere; the device can realize one-time feeding, and simultaneously complete the power test and the light spot identification test of the laser, thereby greatly improving the test efficiency; in the light spot identification test, the size and the shape of the light spot are quantitatively analyzed and judged through the computer control terminal, the difference of artificial judgment is eliminated, and the consistency of product test is improved. The scheme can only solve the test of the packaged semiconductor laser product, and cannot perform binding test on the COS wavelength, and the invention fills the blank of automatic binding test on the COS wavelength.
At present, in the LD test industry, the wavelength test method of the semiconductor laser COS (COS is that a heat sink is connected with a chip through a capillary as shown in figure 1) is a manual test, namely the bottom surface of the heat sink sheet with the chip is placed on a manual sliding platform, then the wavelength is pricked through a test needle and is shot onto an integrating sphere to form a wave pattern on a computer screen, and the wave pattern is distinguished through human eyes.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the COS wavelength testing device for the semiconductor laser and the testing method thereof, which have the advantages of high production efficiency, good testing consistency and high product qualification rate.
The technical scheme of the invention is as follows:
a COS wavelength testing device for a semiconductor laser comprises a heat sink base and a testing frame, wherein the heat sink base is positioned below the testing frame, a testing needle is arranged on the testing frame, the testing needle is connected with the testing frame through a displacement structure, and an integrating sphere is arranged on one side of the testing frame; the heat sink base is provided with a heat sink with a chip.
Preferably, the heat sink with the chip comprises a beam and a plurality of heat sinks with the chip, the beam is provided with a heat sink sheet, and the top of the heat sink sheet is provided with the chip. The beam is simultaneously provided with a plurality of heat sinks with chips, and the test needle can be used for carrying out a pricking test repeatedly.
Preferably, the high-temperature adhesive tape is arranged around the beam. The beam is fixed on the heat sink base by a fixing paste or a fixing adhesive tape.
Preferably, the displacement structure comprises a slide rail and a power source, the slide rail direction comprises three directions of XYZ, and each direction is provided with the power source. The power source drives the test needle to move on the test frame in three-dimensional space.
Preferably, the heat sink base is provided with a positioning pin hole in a penetrating manner, a positioning pin is arranged in the positioning pin hole, a frame area is formed on the heat sink base by the positioning pin, and the heat sink with the chip is arranged in the fixing area, so that the positioning is facilitated.
Further preferably, the positioning pin is 0.1-0.2mm higher than the surface of the heat sink base.
A test method of COS wavelength test device for semiconductor laser comprises the following steps:
a) placing a heat sink with a chip to be tested on a heat sink base;
b) when the heat sink with the chip is placed, the heat sink is placed in a frame body formed by the positioning pins of the base of the heat sink, so that the positioning effect is achieved;
c) in order to ensure that the heat sink is firmly connected with the heat sink base, four corners of the cross beam are fixed through high-temperature adhesive tapes;
d) the power source drives the test needle to move vertically and transversely on the slide rail, the test needle moves downwards to be in contact with the heat sink base, the wavelength generated after power supply is injected into the integrating sphere cavity, the wavelength range is distinguished through test software, the gear is distinguished through analysis, the action of COS wavelength test is completed, after the chip is pricked and tested, the plane of the test needle is driven by the power source to move to the next chip, the chip is vertically contacted downwards, the action of pricking and testing is completed, the test needle reciprocates, and all the heat sink pricking and testing with the chips are achieved.
The invention has the beneficial effects that:
the invention solves the problem that the COS wavelength for the semiconductor laser cannot be automatically tested, solves the problem that only one equipment can be used by one person in a manual mode, can finish the operation by more than ten equipment at present, saves a large amount of labor, controls the action of the heat sink base through the driving motor, improves the consistency of the COS wavelength test, and has the following advantages compared with the prior art:
1. greatly improves the product quality and greatly improves the yield.
2. The method for testing the COS wavelength of the semiconductor laser reduces the probability of COS contact of operators and reduces pollution in large batch.
3. The cost is saved, and the production efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of the structure of COS (i.e., thermal sinker and chip) in the method of the present invention;
FIG. 2 is a schematic view of the overall structure of a heat sink and a chip according to the method of the present invention;
FIG. 3 is an enlarged view taken at A in FIG. 2;
fig. 4 is a schematic view of the overall structure of the heat sink base of the present invention;
FIG. 5 is a schematic diagram of the overall structure of the testing device of the present invention;
the device comprises a chip 1, a chip 2, a heat sink block 3, a beam 4, a positioning pin 5, a positioning pin hole 6, a high-temperature adhesive tape pasting part 7, a testing pin 8, a heat sink base 9 and an integrating sphere.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
As shown in fig. 1-5.
Example 1:
a device for testing COS wavelength for a semiconductor laser comprises a heat sink base and a test jig, wherein the heat sink base is positioned below the test jig, a test needle is arranged on the test jig, the test needle is connected with the test jig through a displacement structure, and an integrating sphere is arranged on one side of the test jig; the heat sink base is provided with a heat sink with a chip.
The heat sink with the chip comprises a beam and a plurality of heat sinks with the chips, as shown in fig. 1-3, the beam is provided with a heat sink sheet, and the top of the heat sink sheet is provided with the chip. The beam is simultaneously provided with a plurality of heat sinks with chips, and the test needle can be used for carrying out a pricking test repeatedly.
The displacement structure includes slide rail and power supply, and the slide rail direction includes the three direction of XYZ, and every direction all is equipped with the power supply. The power source drives the test needle to move on the test frame in three-dimensional space.
The heat sink base is provided with a positioning pin hole in a penetrating mode, a positioning pin is arranged in the positioning pin hole and is 0.1mm higher than the surface of the heat sink base, a frame area is formed on the heat sink base through the positioning pin, and the heat sink with the chip is arranged in the fixing area to facilitate positioning.
Example 2:
an apparatus for testing a semiconductor laser using a COS wavelength is constructed as described in example 1, except that the positioning pins are 0.2mm higher than the surface of the base of the heat sink.
Example 3:
the structure of the device for testing the COS wavelength of the semiconductor laser is as described in embodiment 1, except that a high-temperature adhesive tape is arranged around a beam. The beam is fixed on the heat sink base by a fixing paste or a fixing adhesive tape.
Example 4:
a testing method using the COS wavelength testing device for a semiconductor laser described in embodiment 3, comprising the steps of:
a) placing a heat sink with a chip to be tested on a heat sink base;
b) when the heat sink with the chip is placed, the heat sink is placed in a frame body formed by the positioning pins of the base of the heat sink, so that the positioning effect is achieved;
c) in order to ensure that the heat sink is firmly connected with the heat sink base, four corners of the cross beam are fixed through high-temperature adhesive tapes;
d) the power source drives the test needle to move vertically and transversely on the slide rail, the test needle moves downwards to be in contact with the heat sink base, the wavelength generated after power supply is injected into the integrating sphere cavity, the wavelength range is distinguished through test software, the gear is distinguished through analysis, the action of COS wavelength test is completed, after the chip is pricked and tested, the plane of the test needle is driven by the power source to move to the next chip, the chip is vertically contacted downwards, the action of pricking and testing is completed, the test needle reciprocates, and all the heat sink pricking and testing with the chips are achieved. Compared with manual operation, the method has the advantages that the yield of the test result is improved to more than 90%, the production efficiency is improved to 1.1 ten thousand output per hour, 8 people are saved for a production line, and the manual production capacity is improved by 150%.
Claims (7)
1. The COS wavelength testing device for the semiconductor laser is characterized by comprising a heat sink base and a testing frame, wherein the heat sink base is positioned below the testing frame, a testing needle is arranged on the testing frame, the testing needle is connected with the testing frame through a displacement structure, and an integrating sphere is arranged on one side of the testing frame; the heat sink base is provided with a heat sink with a chip.
2. The COS wavelength test device for a semiconductor laser as claimed in claim 1, wherein the die-attached heat sink includes a beam and a plurality of die-attached heat sinks, the beam being provided with heat sink fins, the top of which being provided with dies.
3. The COS wavelength test device for a semiconductor laser as claimed in claim 2, wherein the beam is provided with a high temperature adhesive tape around it.
4. The COS wavelength test device for a semiconductor laser as claimed in claim 3, wherein the displacement structure includes a slide and a power source, the slide direction includes XYZ three directions, and each direction is provided with a power source.
5. The COS wavelength testing device for a semiconductor laser as claimed in claim 4, wherein a positioning pin hole is formed through the heat sink base, and a positioning pin is disposed in the positioning pin hole.
6. The COS wavelength test device for a semiconductor laser as claimed in claim 5, wherein the positioning pins are 0.1-0.2mm higher than the surface of the submount base.
7. A testing method using the COS wavelength test device for a semiconductor laser as set forth in claim 5, comprising the steps of:
a) placing a heat sink with a chip to be tested on a heat sink base;
b) when the heat sink with the chip is placed, the heat sink is placed in a frame body formed by the positioning pins of the base of the heat sink;
c) four corners of the beam are fixed by high-temperature adhesive tapes;
d) the power source drives the test needle to move vertically and transversely on the slide rail, the test needle moves downwards to be in contact with the heat sink base, the wavelength generated after power supply is injected into the integrating sphere cavity, the wavelength range is distinguished through test software, the gear is distinguished through analysis, the action of COS wavelength test is completed, after the chip is pricked and tested, the plane of the test needle is driven by the power source to move to the next chip, the chip is vertically contacted downwards, the action of pricking and testing is completed, the test needle reciprocates, and all the heat sink pricking and testing with the chips are achieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011161186.0A CN114486180A (en) | 2020-10-27 | 2020-10-27 | COS wavelength testing device and testing method for semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011161186.0A CN114486180A (en) | 2020-10-27 | 2020-10-27 | COS wavelength testing device and testing method for semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114486180A true CN114486180A (en) | 2022-05-13 |
Family
ID=81471271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011161186.0A Pending CN114486180A (en) | 2020-10-27 | 2020-10-27 | COS wavelength testing device and testing method for semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114486180A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106353073A (en) * | 2016-09-20 | 2017-01-25 | 山东华光光电子股份有限公司 | Device and method for screening wavelengths in laser device packaging procedures |
| CN206470360U (en) * | 2016-12-01 | 2017-09-05 | 深圳市标谱半导体科技有限公司 | A kind of round sexual act mechanism for testing |
| CN207132981U (en) * | 2017-08-31 | 2018-03-23 | 山东华光光电子股份有限公司 | A kind of semiconductor laser encapsulation process medium wavelength automatic testing equipment |
| CN108627762A (en) * | 2018-06-08 | 2018-10-09 | 深圳瑞波光电子有限公司 | A kind of test system |
| CN109277329A (en) * | 2018-09-10 | 2019-01-29 | 深圳市矽电半导体设备有限公司 | A kind of semiconductor test gets method ready |
| CN111060725A (en) * | 2020-01-08 | 2020-04-24 | 张利霞 | Semiconductor chip testing device |
| CN111323696A (en) * | 2020-04-19 | 2020-06-23 | 大连优迅科技有限公司 | Laser chip testing device and testing method |
-
2020
- 2020-10-27 CN CN202011161186.0A patent/CN114486180A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106353073A (en) * | 2016-09-20 | 2017-01-25 | 山东华光光电子股份有限公司 | Device and method for screening wavelengths in laser device packaging procedures |
| CN206470360U (en) * | 2016-12-01 | 2017-09-05 | 深圳市标谱半导体科技有限公司 | A kind of round sexual act mechanism for testing |
| CN207132981U (en) * | 2017-08-31 | 2018-03-23 | 山东华光光电子股份有限公司 | A kind of semiconductor laser encapsulation process medium wavelength automatic testing equipment |
| CN108627762A (en) * | 2018-06-08 | 2018-10-09 | 深圳瑞波光电子有限公司 | A kind of test system |
| CN109277329A (en) * | 2018-09-10 | 2019-01-29 | 深圳市矽电半导体设备有限公司 | A kind of semiconductor test gets method ready |
| CN111060725A (en) * | 2020-01-08 | 2020-04-24 | 张利霞 | Semiconductor chip testing device |
| CN111323696A (en) * | 2020-04-19 | 2020-06-23 | 大连优迅科技有限公司 | Laser chip testing device and testing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110646725A (en) | Rapid testing device and testing method for laser chip semi-finished product | |
| KR20090057865A (en) | Method for manufacturing a solar cell module and an equipment therefor | |
| CN103900919A (en) | Hardness tester and method for hardness test | |
| CN111442835A (en) | Laser chip test platform | |
| CN107290306A (en) | A kind of laser crystal particle doping concentration uniformity testing method and device | |
| CN110064848A (en) | A kind of marking device | |
| CN109326951A (en) | A kind of multiple semiconductor laser tube cores sintering fixture and its sintering method | |
| KR20220114005A (en) | Method of adjusting the height of the condenser lens and the chip transfer method, and the height adjusting apparatus and the chip transfer apparatus of the condenser lens | |
| CN114486180A (en) | COS wavelength testing device and testing method for semiconductor laser | |
| CN108994447A (en) | A kind of medical instrument on-line monitoring preparation system and method based on femtosecond laser | |
| CN216696100U (en) | AOI detection device | |
| CN212936552U (en) | BGA chip repairing device based on laser beam shaping | |
| CN110932087A (en) | Semiconductor laser chip correcting device and correcting method | |
| CN110676686A (en) | Die bonding clamp and die bonding method for photoelectric detector of semiconductor laser | |
| KR20130008187A (en) | Measurment device for flux and method for measurment thereof | |
| CN116053153A (en) | Die bonder and die bonding method | |
| CN106353073A (en) | Device and method for screening wavelengths in laser device packaging procedures | |
| US6886997B2 (en) | Apparatus and method for active alignment of optical components | |
| CN212695446U (en) | Sintering clamp of semiconductor laser | |
| CN114264450A (en) | COS light spot binding device and method for semiconductor laser | |
| CN111678676A (en) | Silicon-based OLED probe testing device and testing method thereof | |
| CN114309864A (en) | Reflow soldering clamp for semiconductor laser chip | |
| CN211978114U (en) | Laser chip test platform | |
| CN204128985U (en) | Semiconductor laser proving installation | |
| CN115106310B (en) | Microchannel semiconductor laser appearance inspection device and inspection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |