CN204128985U - Semiconductor laser proving installation - Google Patents
Semiconductor laser proving installation Download PDFInfo
- Publication number
- CN204128985U CN204128985U CN201420380622.7U CN201420380622U CN204128985U CN 204128985 U CN204128985 U CN 204128985U CN 201420380622 U CN201420380622 U CN 201420380622U CN 204128985 U CN204128985 U CN 204128985U
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- light
- coupled
- sample
- conductor
- objective table
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000009434 installation Methods 0.000 title claims abstract description 22
- 239000000523 sample Substances 0.000 claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 37
- 238000003384 imaging method Methods 0.000 claims abstract description 25
- 238000005401 electroluminescence Methods 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims abstract description 23
- 238000005424 photoluminescence Methods 0.000 claims abstract description 22
- 239000013307 optical fiber Substances 0.000 claims description 23
- 230000003595 spectral effect Effects 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 26
- 239000013078 crystal Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 230000006378 damage Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000010998 test method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model provides a kind of semiconductor laser proving installation, it comprise one for carry the conductor objective table of a sample, power supply, an optical system just this conductor objective table arranged and with a LASER Light Source of this optical system optical coupled, an imaging device and a spectrometer.This power supply comprises an anode probe and a cathodic probe, and this power supply is used for exporting an operating voltage to make this sample electroluminescence (EL) by this anode probe and this cathodic probe to this sample.This LASER Light Source is used for Emission Lasers, and this laser is projected on this sample to make this sample photoluminescence (PL) by this optical system; This imaging system is used for by this sample imaging to EL or PL of this optical system; This spectrometer is used for the wavelength by this sample of this optical system measuring EL or PL.
Description
Technical field
The utility model relates to semiconductor laser technique, particularly a kind of semiconductor laser proving installation.
Background technology
Owing to having, volume is little, efficiency is high, the life-span is long, cover the advantages such as wavelength coverage is wide, and semiconductor laser is widely used in the fields such as industry, medical treatment, beauty treatment in recent years.Because service condition is more and more harsh, the requirement of each application to semiconductor laser is more and more higher, particularly to the reliability of semiconductor laser and the requirement of wavelength coverage more and more higher, so need to test the reliability of semiconductor laser and wavelength coverage, to judge whether to meet the requirements.
The processing procedure of semiconductor laser is included in and cuts into semi-conductor chip after semiconductor crystal wafer (wafer) prepares optical cavity and packaged semiconductor is semiconductor subassembly.General, require that the semiconductor laser obtained should have higher reliability according to preparation.But, also catastrophic body of light damage (catastrophic optical body damage may be there is, or catastrophic optical mirror damage (catastrophic optical mirror damage, COMD) and cause semiconductor laser to lose efficacy (do not have reliability) COBD).Wherein, COBD damages mainly due to semiconductor crystal wafer inner structure and causes, and COMD causes mainly due to the lens surface damage of the optical cavity of semiconductor subassembly.
In addition, the wavelength coverage of semiconductor laser was just determined in the semiconductor crystal wafer stage.Therefore, in order to improve the yield of finished product, usually need to measure semiconductor crystal wafer photoluminescence (photoluminescence, PL) or the spectrum of electroluminescence (electroluminescence, EL), to judge whether to meet the requirements.
At present, due to semiconductor laser test object and project more, therefore need to adopt different equipment, such as need to adopt different equipment to carry out PL and the EL test of semiconductor crystal wafer, adopt other equipment to observe semiconductor subassembly and whether there is COMD, and adopt other equipment to carry out the EL test of semiconductor subassembly, poor efficiency and cost is high.
Utility model content
In view of this, be necessary to provide a kind of efficient and semiconductor laser proving installation that cost is low.
A kind of semiconductor laser proving installation, it comprises:
One for carrying the conductor objective table of a sample;
A power supply, comprises an anode probe and a cathodic probe, and this power supply is used for exporting an operating voltage to make this sample electroluminescence (EL) by this anode probe and this cathodic probe to this sample;
One just to the optical system that this conductor objective table is arranged; And
With a LASER Light Source of this optical system optical coupled, an imaging device and a spectrometer; This LASER Light Source is used for Emission Lasers, and this laser is projected on this sample to make this sample photoluminescence (PL) by this optical system; This imaging system is used for by this sample imaging to EL or PL of this optical system; This spectrometer is used for the wavelength by this sample of this optical system measuring EL or PL.
So, this semiconductor laser proving installation can carry out EL and PL test to this semiconductor crystal wafer simultaneously, can raise the efficiency and reduce costs.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of the semiconductor crystal wafer of the utility model first embodiment.
Fig. 2 is the schematic perspective view of the semiconductor subassembly of the utility model first embodiment.
Fig. 3 is the floor map of the semiconductor laser proving installation measuring semiconductor wafer of the utility model first embodiment.
Fig. 4 is the floor map of the semiconductor laser proving installation measuring semiconductor assembly of the utility model first embodiment.
Fig. 5 is the floor map of the semiconductor laser proving installation measuring semiconductor wafer of the utility model second embodiment.
Fig. 6 is the floor map of the semiconductor laser proving installation measuring semiconductor assembly of the utility model second embodiment.
Fig. 7 is the floor map of the semiconductor laser proving installation measuring semiconductor wafer of the utility model the 3rd embodiment.
Fig. 8 is the floor map of the semiconductor laser proving installation measuring semiconductor assembly of the utility model the 3rd embodiment.
Main element symbol description
| Semiconductor crystal wafer | 10 |
| Anode surface | 11 |
| Cathode surface | 12 |
| Semi-conductor chip | 20 |
| N pole metal level | 21 |
| P pole metal level | 22 |
| Front end minute surface | 23 |
| Rear end minute surface | 24 |
| Weld pad | 30 |
| Heat sink | 40 |
| Semiconductor subassembly | 50 |
| Negative electrode | 51 |
| Semiconductor laser proving installation | 100 |
| Conductor objective table | 110 |
| Upper surface | 111 |
| Power supply | 120 |
| Anode probe | 121 |
| Cathodic probe | 122 |
| Microscopic system | 130 |
| Object lens | 131 |
| First end | 1311 |
| Second end | 1312 |
| Coupling eyeglass | 132、190c |
| Light-dividing device | 140 |
| Light splitting surface | 141 |
| Imaging device | 150 |
| Y shape optical fiber | 160 |
| Sending and receiving end | 161 |
| Exit end | 162 |
| Incidence end | 163 |
| Spectrometer | 170 |
| LASER Light Source | 180 |
| Optical fiber | 190a、190b |
Following embodiment will further illustrate the utility model in conjunction with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, semiconductor laser generally by photoetching on semiconductor crystal wafer (wafer) 10, etching, gold-plated, cutting, plated film (preparing optical cavity), encapsulate after obtain.Semiconductor crystal wafer 10 is generally obtained by manufacture of semiconductor (such as epitaxial growth) by possessing electroluminescent Semiconductor substrate (such as gallium arsenide).Semiconductor crystal wafer 10 comprises an anode surface 11 (polished surface) and a cathode surface 12 (frosting) opposing with anode surface 11.Apply operating voltage by anode surface 11 and cathode surface 12, semiconductor crystal wafer 10 just can electroluminescence (EL).
Refer to Fig. 2, semiconductor crystal wafer 10 obtains multiple semi-conductor chip (chip) 20 after preparation.Each semi-conductor chip 20 comprises N pole metal level (N-metal) 21 (corresponding cathode surface 12), P pole metal level 22 (corresponding anode surface 11), a front end minute surface (front facet opposing with N pole metal level 21, FF) 23 and a rear end minute surface (rear facet, RF) 24 opposing with front end minute surface 23.
Each semi-conductor chip 20 is arranged on heat sink (submount) 40 to form a semiconductor subassembly (chip on submount, COS) 50.Concrete, semiconductor subassembly 50 can be obtained by being welded on heat sink 40 by weld pad 30 by P pole metal level 22.
During work, between N pole metal level 21 and P pole metal level 22, apply operating voltage, make the inner EL of semi-conductor chip 20.
Refer to Fig. 3, the semiconductor laser proving installation 100 of the utility model first embodiment comprises a conductor objective table 110, power supply 120, microscopic system 130, light-dividing device 140, imaging device 150, Y shape optical fiber 160, spectrometer 170, LASER Light Source 180.
Conductor objective table 110 can adopt metal to make, and comprises a upper surface 111.
Power supply 120 is arranged near conductor objective table 110, and comprises an anode probe 121 and a cathodic probe 122.Power supply 120 can export an operating voltage by anode probe 121 and cathodic probe 122.
Microscopic system 130 comprises object lens 131.Object lens 131 comprise one just to the first end 1311 of upper surface 111 and one and opposing the second end 1312 of first end 1311.Concrete, microscopic system 130 can also comprise other optical element, such as just right with the second end 1312 eyeglass 132 that is coupled.
Light-dividing device 140 is arranged on microscopic system 130 and the opposing side of conductor objective table 110, and with microscopic system 130 optically-coupled.Such as, light-dividing device 140 just to coupling eyeglass 132 arranging and with eyeglass 132 optically-coupled that is coupled.Light-dividing device 140 comprises a light splitting surface 141.In the present embodiment, this light-dividing device 140 is prism.
Imaging device 150 dorsad light splitting surface 141 arrange and with light splitting surface 141 optically-coupled.In other words, imaging device 150 is arranged on the reflected light path of light splitting surface 141.Imaging device 150 can be camera module.
Y shape optical fiber 160 comprises one just to 161, one, sending and receiving end exit end 162 and an incidence end 163 of light splitting surface 141 setting.In other words, sending and receiving end 161 is arranged on the transmitted light path of light splitting surface 141.
Spectrometer 170 pairs of exit ends 162 are arranged and and exit end 162 optically-coupled.
LASER Light Source 180 is just being arranged incidence end 163 and and incidence end 163 optically-coupled.
During test, EL test and photoluminescence (PL) test need be carried out to semiconductor crystal wafer 10.Concrete, the semiconductor laser method of testing of the utility model better embodiment comprises the following steps S01-S09.
S01: be placed on by semiconductor crystal wafer 10 on upper surface 111, wherein cathode surface 12 contacts with conductor objective table 110.
S02: cathodic probe 122 and anode probe 121 contact conductor objective table 110 and anode surface 11 respectively.
S03: start power supply 120, so, power supply 120 applies an operating voltage, to make semiconductor crystal wafer 10EL by cathodic probe 122 and anode probe 121 pairs of semiconductor crystal wafers 10.
S04: imaging device 150 is by semiconductor crystal wafer 10 imaging of microscopic system 130, light-dividing device 140 couples of EL and produce image.By adjusting the focal length of microscopic system 130, clear picture can be made.
S05: spectrometer 170 measures the spectral wavelength of semiconductor crystal wafer 10EL by microscopic system 130, light-dividing device 140, Y shape optical fiber 160.By adjusting the focal length of microscopic system 130, spectral intensity can be made to reach optimization.
S06: the connection of deenergization 120 and conductor objective table 110 and anode surface 11.
S07: start LASER Light Source 180, make LASER Light Source 180 send laser.Laser enters Y shape optical fiber 160 through incidence end 163, and from sending and receiving end 161 outgoing, arrives anode surface 11, make semiconductor crystal wafer 10PL through light-dividing device 140, microscopic system 130.
S08: imaging device 150 is to producing image by the PL photoimaging of microscopic system 130, light-dividing device 140.By adjusting the focal length of microscopic system 130, clear picture can be made.
S09: the spectral wavelength of the PL light arrived by microscopic system 130, light-dividing device 140, Y shape optical fiber 160 measured by spectrometer 170.By adjusting the focal length of microscopic system 130, spectral intensity can be made to reach optimization.
During test, this semiconductor laser method of testing can also comprise:
S10: directly observe front end minute surface 23 and rear end minute surface 24 to judge whether semiconductor subassembly 50 exists COMD by this semiconductor laser proving installation 100.
If cannot judge, whether semiconductor subassembly 50 exists COMD, then can carry out EL test to semiconductor subassembly 50.
Concrete, refer to Fig. 4, the further comprising the steps of S11-S16 of semiconductor laser method of testing of the utility model better embodiment.
S11: grind off N pole metal level 21 to expose the negative electrode 51 of semiconductor subassembly 50.
S12: semiconductor subassembly 50 is placed on conductor objective table 110.Wherein, heat sink 40 contacts with conductor objective table 110.
S13: cathodic probe 122 and anode probe 121 distinguish Contact cathod 51 and heat sink 40.
S14: start power supply 120 and apply an operating voltage to make power supply 120 by cathodic probe 122 and anode probe 121 pairs of semiconductor subassemblies 50 thus make semiconductor subassembly 50EL.
S15: imaging device 150 is by semiconductor subassembly 50 imaging of microscopic system 130, light-dividing device 140 couples of EL and produce image.By adjusting the focal length of microscopic system 130, clear picture can be made.So, whether COMD or COBD can be there is by graphical analysis semiconductor subassembly 50.
S16: spectrometer 170 measures the spectral wavelength of semiconductor subassembly 50EL by microscopic system 130, light-dividing device 140, Y shape optical fiber 160.By adjusting the focal length of microscopic system 130, spectral intensity can be made to reach optimization.
S17: the connection of deenergization 120 and negative electrode 51 and heat sink 40.
S18: start LASER Light Source 180, make LASER Light Source 180 send laser.Laser enters Y shape optical fiber 160 through incidence end 163, and from sending and receiving end 161 outgoing, arrives negative electrode 51 surface, make semiconductor subassembly 50PL through light-dividing device 140, microscopic system 130.
S19: imaging device 150 is to producing image by the PL photoimaging of microscopic system 130, light-dividing device 140.By adjusting the focal length of microscopic system 130, clear picture can be made.
S20: the spectral wavelength of the PL light arrived by microscopic system 130, light-dividing device 140, Y shape optical fiber 160 measured by spectrometer 170.By adjusting the focal length of microscopic system 130, spectral intensity can be made to reach optimization.
In fact, microscopic system 130, light-dividing device 140 and Y shape optical fiber 160 form an optical system, imaging device 150, spectrometer 170 and LASER Light Source 180 and optical system optical coupled.But optical system is not limited to present embodiment.
Refer to Fig. 5 and Fig. 6, in the utility model second embodiment, optical system still comprises imaging device 150 and light-dividing device 140, however Y shape optical fiber 160 by two optical fiber 190a, 190b and a coupling eyeglass 190c replace.Wherein, spectrometer 170 by optical fiber 190a and light-dividing device 140 optical coupled, and LASER Light Source 180 by optical fiber 190b and coupling eyeglass 190c direct and semiconductor crystal wafer 10 or semiconductor subassembly 50 optical coupled.
Refer to Fig. 7 and Fig. 8, in the utility model the 3rd embodiment, compare with the second embodiment, the location swap of spectrometer 170 and LASER Light Source 180.
In a word; those skilled in the art will be appreciated that; above embodiment is only used to the utility model is described; and be not used as restriction of the present utility model; as long as within spirit of the present utility model, the suitable change do above embodiment and change all drop within the claimed scope of the utility model.
Claims (6)
1. a semiconductor laser proving installation, it comprises:
One for carrying the conductor objective table of a sample;
A power supply, comprises an anode probe and a cathodic probe, and this power supply is used for exporting an operating voltage to make this sample electroluminescence by this anode probe and this cathodic probe to this sample;
One just to the optical system that this conductor objective table is arranged; And
With a LASER Light Source of this optical system optical coupled, an imaging device and a spectrometer; This LASER Light Source is used for Emission Lasers, and this laser is projected on this sample to make this sample photoluminescence by this optical system; This imaging device is used for by this sample imaging to electroluminescence or photoluminescence of this optical system; This spectrometer is used for the spectral wavelength by this sample electroluminescence of this optical system measuring or photoluminescence.
2. semiconductor laser proving installation as claimed in claim 1, it is characterized in that, this optical system comprises:
One just to the microscopic system that this conductor objective table is arranged;
A light-dividing device being arranged at this microscopic system and this opposing side of conductor objective table, this light-dividing device and this microscopic system optically-coupled, and comprise a light splitting surface; This imaging device is arranged in the transmitting light path of this light splitting surface; And
One is arranged on the Y shape optical fiber on the transmitted light path of this light splitting surface, and this Y shape optical fiber comprises the sending and receiving end just arranged this light splitting surface, an exit end and an incidence end, this spectrometer just this exit end is being arranged and with the spectrometer of this exit end optically-coupled; This LASER Light Source is just to the setting of this incidence end and in this incidence end optically-coupled.
3. semiconductor laser proving installation as claimed in claim 1, it is characterized in that, this optical system comprises:
One just to the microscopic system that this conductor objective table is arranged;
A light-dividing device being arranged at this microscopic system and this opposing side of conductor objective table, this light-dividing device and this microscopic system optically-coupled, and comprise a light splitting surface; This imaging device is arranged in the transmitting light path of this light splitting surface; And
Two optical fiber and a coupled lens, this spectrometer is by a wherein optical fiber and this light-dividing device optically-coupled, and this LASER Light Source is by another root optical fiber and this coupled lens is direct and this sample optical coupled.
4. semiconductor laser proving installation as claimed in claim 1, it is characterized in that, this optical system comprises:
One just to the microscopic system that this conductor objective table is arranged;
A light-dividing device being arranged at this microscopic system and this opposing side of conductor objective table, this light-dividing device and this microscopic system optically-coupled, and comprise a light splitting surface; This imaging device is arranged in the transmitting light path of this light splitting surface; And
Two optical fiber and a coupled lens, this LASER Light Source is by a wherein optical fiber and this light-dividing device optically-coupled, and this spectrometer is by another root optical fiber and this coupled lens is direct and this sample optical coupled.
5. the semiconductor laser proving installation as described in any one of claim 2-4, is characterized in that, this microscopic system comprises object lens, and these object lens comprise one just to the first end of this conductor objective table and one and opposing the second end of first end.
6. the semiconductor laser proving installation as described in any one of claim 2-4, is characterized in that, this light-dividing device is prism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420380622.7U CN204128985U (en) | 2014-07-10 | 2014-07-10 | Semiconductor laser proving installation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420380622.7U CN204128985U (en) | 2014-07-10 | 2014-07-10 | Semiconductor laser proving installation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204128985U true CN204128985U (en) | 2015-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420380622.7U Expired - Lifetime CN204128985U (en) | 2014-07-10 | 2014-07-10 | Semiconductor laser proving installation |
Country Status (1)
| Country | Link |
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| CN (1) | CN204128985U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104142351A (en) * | 2014-07-10 | 2014-11-12 | 深圳清华大学研究院 | Semiconductor laser testing device and method |
| CN105044082A (en) * | 2015-06-12 | 2015-11-11 | 青岛科技大学 | Photochemical luminescent analytical instrument |
-
2014
- 2014-07-10 CN CN201420380622.7U patent/CN204128985U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104142351A (en) * | 2014-07-10 | 2014-11-12 | 深圳清华大学研究院 | Semiconductor laser testing device and method |
| CN105044082A (en) * | 2015-06-12 | 2015-11-11 | 青岛科技大学 | Photochemical luminescent analytical instrument |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |