CN114464531B - 碳化硅肖特基二极管的制造方法 - Google Patents
碳化硅肖特基二极管的制造方法 Download PDFInfo
- Publication number
- CN114464531B CN114464531B CN202210383922.XA CN202210383922A CN114464531B CN 114464531 B CN114464531 B CN 114464531B CN 202210383922 A CN202210383922 A CN 202210383922A CN 114464531 B CN114464531 B CN 114464531B
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- Prior art keywords
- layer
- epitaxial layer
- silicon nitride
- groove
- silicon
- Prior art date
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 72
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 45
- 235000012239 silicon dioxide Nutrition 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 36
- 239000002131 composite material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- -1 aluminum ions Chemical class 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210383922.XA CN114464531B (zh) | 2022-04-13 | 2022-04-13 | 碳化硅肖特基二极管的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210383922.XA CN114464531B (zh) | 2022-04-13 | 2022-04-13 | 碳化硅肖特基二极管的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114464531A CN114464531A (zh) | 2022-05-10 |
CN114464531B true CN114464531B (zh) | 2022-06-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202210383922.XA Active CN114464531B (zh) | 2022-04-13 | 2022-04-13 | 碳化硅肖特基二极管的制造方法 |
Country Status (1)
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CN (1) | CN114464531B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115274435B (zh) * | 2022-09-22 | 2023-01-03 | 深圳芯能半导体技术有限公司 | 一种凸形碳化硅mps器件及其制备方法、芯片 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060131686A1 (en) * | 2004-12-20 | 2006-06-22 | Silicon-Base Technology Corp. | LOCOS-based junction-pinched schottky rectifier and its manufacturing methods |
US20090224354A1 (en) * | 2008-03-05 | 2009-09-10 | Cree, Inc. | Junction barrier schottky diode with submicron channels |
KR20150048360A (ko) * | 2013-10-28 | 2015-05-07 | 코닝정밀소재 주식회사 | 접합 장벽 쇼트키 다이오드 및 이에 의해 제조된 접합 장벽 쇼트키 다이오드 |
CN109103077A (zh) * | 2018-08-30 | 2018-12-28 | 深圳基本半导体有限公司 | 离子注入方法及掩膜层结构 |
US10916626B2 (en) * | 2018-12-28 | 2021-02-09 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | High voltage power device with hybrid Schottky trenches and method of fabricating the same |
CN110571262B (zh) * | 2019-09-09 | 2021-03-30 | 电子科技大学 | 一种具有沟槽结构的碳化硅结势垒肖特基二极管 |
CN111799337A (zh) * | 2020-07-27 | 2020-10-20 | 西安电子科技大学 | 一种SiC JBS二极管器件及其制备方法 |
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2022
- 2022-04-13 CN CN202210383922.XA patent/CN114464531B/zh active Active
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CN114464531A (zh) | 2022-05-10 |
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Application publication date: 20220510 Assignee: Suzhou Heyu Finance Leasing Co.,Ltd. Assignor: SHENZHEN XINER SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Contract record no.: X2023980039186 Denomination of invention: Manufacturing method of silicon carbide Schottky diode Granted publication date: 20220628 License type: Exclusive License Record date: 20230808 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Manufacturing method of silicon carbide Schottky diode Effective date of registration: 20230810 Granted publication date: 20220628 Pledgee: Suzhou Heyu Finance Leasing Co.,Ltd. Pledgor: SHENZHEN XINER SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: Y2023980051584 |