CN114342052A - 半导体装置的制造装置及制造方法 - Google Patents
半导体装置的制造装置及制造方法 Download PDFInfo
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- CN114342052A CN114342052A CN202080040527.0A CN202080040527A CN114342052A CN 114342052 A CN114342052 A CN 114342052A CN 202080040527 A CN202080040527 A CN 202080040527A CN 114342052 A CN114342052 A CN 114342052A
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Abstract
半导体装置的制造装置的特征在于包括:载台(12);接合头(14),具有安装工具(20)、搭载于所述安装工具(20)的工具加热器(26)以及使所述安装工具(20)在铅垂方向上移动的升降机构;以及控制器(16),进行接合处理,并且所述控制器(16)在所述接合处理中包括:第一处理,在使所述芯片(100)着落到所述基板(110)后,开始所述芯片(100)的加热,同时对所述芯片向所述基板进行加压;变形消除处理,在所述第一处理后且凸块(104)的熔融前,通过在上升方向上驱动所述升降机构而消除所述接合头(14)的变形;以及第二处理,在所述变形消除处理后,通过以使所述接合头(14)的热膨缩抵消的方式对所述升降机构进行位置控制,从而将间隙量G保持为规定的目标值。
Description
技术领域
在本说明书中,公开一种通过将由安装工具保持的芯片接合到基板来制造半导体装置的制造装置及制造方法。
背景技术
自从前起,作为对基板安装芯片的技术,已知有倒装芯片接合机(flip chipbonder)。在倒装芯片接合机中,在芯片的底面形成有被称为凸块的突起电极。而且,通过安装工具,将所述芯片按压到基板,同时对芯片进行加热而使凸块熔融,从而将芯片的凸块结合、即接合(bonding)到基板的电极。
专利文献1中公开有此种倒装芯片接合机技术。在专利文献1中,在利用安装工具使芯片着落到基板后,一面以一定载荷对所述芯片进行加压一面进行加热而使凸块熔融。而且,在专利文献1中,若凸块熔融,则以芯片底面与基板的间隙量成为所期望的值的方式,使安装工具上升后,断开加热器,使凸块硬化。
现有技术文献
专利文献
专利文献1:日本专利第5014151号公报
发明内容
发明所要解决的问题
但是,在专利文献1中,直至凸块完全熔融之前,以一定载荷持续对芯片进行加压。所述情况下,在凸块刚熔融后,安装工具的前端大幅下降,有可能大幅挤扁熔融的凸块。尤其是,通常在以一定载荷对芯片进行加压的情况下,安装工具产生若干变形。若凸块熔融而自芯片作用于安装工具的反作用力降低,则所述变形瞬间消除,安装工具的前端向将熔融的凸块压扁的方向移动。结果,有时会以预想以上的程度大幅挤扁熔融的凸块。所述情况下,被压扁的凸块在面方向上扩展,也有可能在与相邻的凸块之间产生短路不良。
即,在现有技术中,有可能产生短路不良,无法适当地保持半导体装置的品质。因此,在本说明书中,公开一种可适当地保持半导体装置的品质的半导体装置的制造装置及制造方法。
解决问题的技术手段
本说明书中公开的半导体装置的制造装置的特征在于包括:载台,支撑基板;接合头,具有对芯片底面设置有凸块的芯片进行保持的安装工具、为了对所述芯片进行加热而搭载于所述安装工具的工具加热器、以及使所述安装工具在铅垂方向上移动的升降机构;以及控制器,进行控制所述接合头的驱动并将所述芯片接合到所述基板的接合处理,并且所述控制器在所述接合处理中包括:第一处理,在使所述芯片着落到所述基板后,驱动所述工具加热器及所述升降机构,开始所述芯片的加热,同时对所述芯片向所述基板进行加压;变形消除处理,在所述第一处理后且所述凸块的熔融前,通过在上升方向上驱动所述升降机构而消除所述接合头的变形;以及第二处理,在所述变形消除处理后,通过以使所述接合头的热膨缩抵消的方式对所述升降机构进行位置控制,从而将所述芯片的底面与所述基板的上表面的间隙保持为规定的目标值。
所述情况下,也可所述控制器在所述接合处理之前进行变形消除量检测处理,在所述变形消除量检测处理中,在将所述安装工具及所述载台保持为预先规定的温度的状态下,驱动所述升降机构,利用所述安装工具按压所述基板,之后一面在上升方向上驱动所述升降机构,一面检测所述安装工具对所述基板的按压载荷,并将自开始向所述上升方向的驱动起至所述按压载荷的变动停止为止的所述升降机构的移动量作为变形消除量加以存储,在所述变形消除处理中,基于所述变形消除量在上升方向上驱动所述升降机构。
另外,也可所述控制器在将所述芯片接合处理到所述基板之前,进行检测所述凸块的熔融时间点的熔融时间点检测处理,在所述熔融时间点检测处理中,在使所述芯片着落到所述基板后,依照规定的温度分布对所述芯片进行加热,并将自所述加热的开始起至所述凸块熔融为止的时间作为熔融时间加以存储,所述控制器基于所述熔融时间,决定所述变形消除处理的执行时间点。
另外,也可所述升降机构具有:滑动轴,与所述安装工具机械性地连接;驱动源,使所述滑动轴升降;以及位置传感器,将所述滑动轴的轴向位置作为检测位置来进行检测,所述控制器在所述接合处理之前进行目标分布生成处理,在所述目标分布生成处理中,驱动所述升降机构,使所述安装工具着落到所述基板后,依照规定的温度分布对所述安装工具进行加热,并基于此时获得的由所述位置传感器检测到的检测位置的变化,取得所述接合头的热膨胀量,生成使所述热膨胀量抵消的移动分布作为目标分布,在所述第二处理中,依照所述目标分布对所述升降机构进行位置控制。
本说明书中公开的半导体装置的制造方法对具有安装工具、搭载于所述安装工具的工具加热器以及使所述安装工具在铅垂方向上移动的升降机构的接合头进行驱动,从而将保持于所述安装工具的芯片接合到支撑于载台的基板,所述半导体装置的制造方法的特征在于包括:第一步骤,在使所述安装工具下降以使所述芯片着落到所述基板后,驱动所述工具加热器及所述升降机构,开始所述芯片的加热,同时对所述芯片向所述基板进行加压;变形消除步骤,在所述第一步骤后且设置于所述芯片的底面的凸块的熔融前,通过在上升方向上驱动所述升降机构而消除所述接合头的变形;以及第二步骤,在所述变形消除步骤后,通过以使所述接合头的热膨缩抵消的方式对所述升降机构进行位置控制,从而将所述芯片的底面与所述基板的上表面的间隙量保持为规定的目标值。
发明的效果
根据本说明书中公开的技术,在凸块的熔融前消除接合头的变形,其后以使接合头的热膨缩抵消的方式控制升降机构。由此,可防止熔融的凸块被过度压扁,因此可适当地保持半导体装置的品质。
附图说明
图1是表示半导体装置的制造装置的结构的示意图。
图2是表示半导体芯片的接合的形态的示意图。
图3是表示接合头热膨胀后的形态的图。
图4是表示接合头产生变形的形态的图。
图5是表示接合处理的流程的流程图。
图6是表示接合处理中的各种参数的时间变化的图表。
图7是表示变形消除量检测处理的流程的流程图。
图8是表示变形消除量检测处理中的各种参数的时间变化的图表。
图9是表示熔融时间点检测处理的流程的流程图。
图10是表示熔融时间点检测处理中的各种参数的时间变化的图表。
图11是表示目标分布生成处理的流程的流程图。
图12是表示目标分布生成处理中的各种参数的时间变化的图表。
具体实施方式
以下,参照附图对半导体装置的制造装置10进行说明。图1是表示半导体装置的制造装置10的结构的示意图。制造装置10是通过将作为电子零件的半导体芯片100以面朝下的状态安装到基板110上来制造半导体装置的装置。制造装置10包括:具有安装工具20的接合头14、将半导体芯片100供给到安装工具20的芯片供给部件(未图示)、支撑基板110的载台12、使载台12在XY方向(水平方向)上移动的XY载台18、以及控制这些的驱动的控制器16等。
基板110被抽吸保持于载台12,且由设置于载台12的载台加热器(未图示)加热。另外,半导体芯片100通过芯片供给部件而被供给到安装工具20。作为芯片供给部件的结构,可考虑各种结构,例如,可考虑如下那样的结构:自载置于晶片载台的晶片,利用中转臂拾取半导体芯片,并移送到中转载台。所述情况下,XY载台18将中转载台移送到安装工具20的正下方,安装工具20自位于正下方的中转载台拾取半导体芯片。
若由安装工具20拾取了半导体芯片,则继而通过XY载台18将基板110移送到安装工具20的正下方。若成为所述状态,则安装工具20朝向基板110下降,将抽吸保持于末端的半导体芯片100压接并接合到基板110。
安装工具20抽吸保持半导体芯片100,同时对所述半导体芯片100进行加热。因此,在安装工具20,设置有与真空源连通的抽吸孔(未图示)、或用于对半导体芯片100进行加热的工具加热器26等。在接合头14,除了设置有此种安装工具20以外,也进而设置有使所述安装工具20升降的升降机构。
本例的升降机构大致分为第一单元24a与第二单元24b。第一单元24a使安装工具20在Z轴方向(即铅垂方向)上移动,由此将半导体芯片100推压到基板110,并对所述半导体芯片100施加按压载荷。第一单元24a具有音圈马达(voice coil motor)30(以下,简称为“VCM 30”)、滑动轴32、板簧34、以及引导构件36。VCM 30是第一单元24a的驱动源。所述VCM30具有固着于移动体46的定子30a、以及相对于所述定子30a而在Z轴方向上可动的动子30b。动子30b经由滑动轴32而机械地连结于安装工具20。另外,滑动轴32经由能够在Z轴方向上产生变形的板簧34而装配于移动体46。进而,在移动体46,固着有引导构件36。滑动轴32插通至形成于所述引导构件36的贯通孔中,并能够沿着贯通孔滑动。
若对VCM 30施加电流,则动子30b相对于移动体46而在Z轴方向上移动。此时,滑动轴32及固着于滑动轴32的安装工具20一面使板簧34弹性变形,一面与动子30b一起在Z轴方向上移动。为了检测所述滑动轴32的移动,而在第一单元24a设置有线性编码器50。线性编码器50具有设置于滑动轴32的上端附近的可动部50a、以及位置固定的固定部50b,线性编码器50输出两者的相对的位移量。所述线性编码器50可为磁性地检测位移的磁式编码器,也可为光学性地检测位移的光学式编码器。在光学式编码器的情况下,固定部50b包括在位移方向上形成有多个狭缝孔的标尺,可动部50a包括隔着标尺而配置于两侧的光源及光接收元件。另外,在磁式编码器的情况下,固定部50b包含磁尺,可动部50a包括磁传感器。通过线性编码器50所得的检测值被输出至控制器16。
第二单元24b使第一单元24a相对于基座构件38而在Z轴方向上升降。所述第二单元24b具有升降马达40作为驱动源。在所述升降马达40,经由联结器(coupling)而连结有在轴向上延伸的导螺杆(lead screw)42,导螺杆42伴随升降马达40的驱动而自转。在导螺杆42,螺合有移动块44,所述移动块44固着于VCM 30的定子30a的上表面。另外,在定子30a的侧面,固着有移动体46。所述移动体46能够沿着固着于基座的导轨48滑动。若对升降马达40施加电流,则导螺杆42自转,伴随于此,移动块44在Z轴方向上升降。而且,通过移动块44升降,固着于所述移动块44的第一单元24a及安装工具20也升降。通过第二单元24b而产生的第一单元24a的升降量也由传感器(例如装配于升降马达40的编码器等)探测,并发送到控制器16。
控制器16控制工具加热器26、升降机构、载台12、以及XY载台18的驱动。所述控制器16是物理上具有处理器16a及存储器16b的计算机。在所述“计算机”中,也包括将计算机系统组入到一个集成电路而成的微控制器。另外,所谓处理器16a,是指广义的处理器,包括通用的处理器(例如,中央处理器(Central Processing Unit,CPU)等)、或专用的处理器(例如,图形处理单元(Graphics Processing Unit,GPU)、专用集成电路(ApplicationSpecific Integrated Circuit,ASIC)、现场可编程门阵列(Field Programmable GateArray,FPGA)、可编程逻辑设备等)。另外,以下叙述的处理器16a的动作不仅由一个处理器完成,也可由存在于物理上分开的位置的多个处理器协同完成。同样地,存储器16b也无需在物理上为一个组件,也可由存在于物理上分开的位置的多个存储器构成。另外,存储器16b也可包括半导体存储器(例如,随机存取存储器(Random Access Memory,RAM)、只读存储器(Read Only Memory,ROM)、固体状态驱动器等)及磁碟(例如,硬盘驱动器等)的至少一个。
接着,说明利用此种制造装置10进行的半导体芯片100的接合方法。图2是表示半导体芯片100的接合的形态的示意图。如图2的左图所示,在基板110的上表面,形成有多个电极112。另外,半导体芯片100具有多个自芯片主体102的底面突出且包含焊料等导电金属的凸块104。在安装半导体芯片100时,在使所述凸块104与基板110的电极112接触的状态下,对半导体芯片100进行加热,从而如图2的右图所示那样使凸块104与电极112熔接。再者,在图2中虽未图示,但也可在芯片主体102的底面进一步设置有热硬化性树脂层、例如非导电性膜的层等。
此处,为了良好地保持半导体装置的品质,需要防止凸块104的过度的挤扁,将接合后的芯片主体102的底面与基板110的上表面的间隙量G保持为目标值。若在接合的过程中,熔融的凸块104被过度地压扁而在横向上扩展,则有可能在与邻接的其他凸块104之间导致短路不良。另外,若间隙量G产生偏差,则无法适当地保持半导体装置的品质。因此,在接合时,需要正确地管理半导体芯片100的轴向位置,进而正确地管理安装工具20的底面的轴向位置。然而,在管理此种安装工具20的轴向位置的情况下,热膨缩与变形成为问题。对此,参照图3、图4进行说明。
如上所述,在将半导体芯片100接合时,利用设置于安装工具20的工具加热器26对半导体芯片100进行加热。通过所述加热时产生的热,工具加热器26周边的构件、具体而言是安装工具20或滑动轴32等(以下,称为“周边构件”)热膨缩。图3的双点划线是表示周边构件热膨缩后的形态的图。若周边构件热膨胀,则即便安装工具20的底面的轴向位置没有发生变化,线性编码器50的可动部50a的轴向位置也发生变化。因此,在产生热膨缩的情况下,无法根据由线性编码器50等获得的检测位置Pd正确地掌握实际的半导体芯片100的位置,进而无法正确地管理间隙量G。
另外,在将半导体芯片100接合时,安装工具20对半导体芯片100赋予规定的标准载荷Fs,将半导体芯片100推压到基板110。此时,自半导体芯片100向安装工具20作用规定的反作用力。滑动轴32受到所述反作用力而有时如在图4中双点划线所示那样产生变形。若滑动轴32产生变形,则线性编码器50的可动部50a的轴向位置当然会相应地发生变化。而且,所述情况下,也无法根据由线性编码器50等获得的检测位置Pd正确地掌握实际的半导体芯片100的位置,进而无法正确地管理间隙量G。
另外,在在滑动轴32产生变形的状态下持续凸块104的加热及加压的情况下,在凸块104熔融的时点,来自半导体芯片100的反作用力急剧地下降。而且,所述情况下,滑动轴32的变形被瞬间消除,安装工具20的底面急速下降。所述情况下,熔融的凸块104被安装工具20按压,凸块104有可能被过度地压扁。
在本例中,为了避免此种问题,在凸块104的熔融前,在上升方向上驱动升降机构,消除滑动轴32的变形。另外,通过以使周边构件的热膨缩抵消的方式对安装工具20进行位置控制,从而将间隙量G维持为规定的目标值。以下,参照图5、图6对此种接合的详细的顺序进行说明。图5是表示接合处理的流程的流程图。图6是表示接合处理中的各种参数的时间变化的图表。图6(a)是表示根据设置于升降机构的位置传感器(线性编码器50等)的检测值而求出的安装工具20的轴向位置(以下,称为“检测位置Pd”)的图表。图6(b)是表示安装工具20保持有半导体芯片100时的以载台12的上表面为基准的直至安装工具20的底面的实际的距离(以下,称为“距离Dr”)的图表。图6(c)是表示利用升降机构对半导体芯片100赋予的按压载荷Fp的变化的图表。图6(d)是表示工具加热器26的驱动状态的图表。再者,关于距离Dr,因载台12的变形或热膨胀而距离的基准位置发生变化。
在将半导体芯片100接合到基板110时,控制器16驱动升降机构,使半导体芯片100下降,使半导体芯片100着落到基板110(S10、S12)。具体而言,控制器16首先驱动升降马达40,使安装工具20以高速下降到基板110的附近。继而,在停止升降马达40的状态下,驱动VCM 30,使安装工具20以低速下降。此时,监视检测位置Pd的变化,若检测位置Pd未发生变化,则判断为已着落。再者,如上所述,由于滑动轴32等产生若干变形,因此实际的着落时间点、与由控制器16检测到的着落时间点有若干误差。
在图6的例子中,在时刻t1,半导体芯片100实际上着落到基板110,在时刻t1以后,距离Dr不发生变化。其中,在半导体芯片100实际上着落后,由于滑动轴32等产生变形,因此检测位置Pd也发生变化。因此,控制器16在滑动轴32等充分地产生变形、检测位置Pd不发生变化的时刻t2判断为已着落。
若检测到着落(S12中为是(Yes)),则控制器16执行以一定载荷对半导体芯片100进行加压及加热的第一处理(S14~S18)。具体而言,控制器16以对半导体芯片100赋予预先规定的标准载荷Fs的方式开始升降机构的载荷控制(S14)。即,由于VCM 30输出与所施加的电流成比例的扭矩,因此控制器16持续对VCM 30施加与标准载荷Fs相应的一定电流。在图6中,在时刻t2至时刻t4的期间内,对半导体芯片100赋予标准载荷Fs。
若赋予有标准载荷Fs,则继而,控制器16接通工具加热器26,开始半导体芯片100的加热(S16)。在图6的例子中,在时刻t4,接通工具加热器26。由此,半导体芯片100的温度开始上升。
控制器16监视自开始加热起的经过时间是否达到待机时间Ta(S18)。此处,待机时间Ta是从自加热开始起至凸块104熔融为止的时间(以下,称为“熔融时间Tm”)中减去若干富余量α而得的时间。即,Ta=Tm-α。从另一角度来看,可谓是经过了待机时间Ta的时间点是凸块104即将熔融之前。所述待机时间Ta、熔融时间Tm可预先通过实验来取得,对于此将在以后叙述。在自加热开始起经过了待机时间Ta的情况下(S18中为是),控制器16判断为是凸块104即将熔融之前。在图6的例子中,时刻t4为经过待机时间Ta且凸块104即将熔融之前的时间点。
若为即将熔融之前,则控制器16执行使接合头14的变形消除的变形消除处理(S20)。具体而言,控制器16使VCM 30向使安装工具20上升的方向上升规定的变形消除量Aa的量(S20)。此处,变形消除量Aa是用于消除以标准载荷Fs对半导体芯片100进行加压时升降机构所产生的变形所需的VCM 30的移动量。所述变形消除量Aa也与待机时间Ta及熔融时间Tm同样地,可预先通过实验取得,对于此将在以后叙述。总之,通过在上升方向上以变形消除量Aa的量驱动VCM 30,从而消除接合头14、尤其是滑动轴32的变形。在图6的例子中,在自时刻t4至时刻t5的期间内,驱动VCM 30直至检测位置Pd上升变形消除量Aa的量为止。此时,安装工具20的距离Dr并未变化,滑动轴32的变形被消除,另外,按压载荷Fp急剧地下降。
若可消除变形,则控制器16执行用于将间隙量G保持为目标值的第二处理(S22~S26)。具体而言,控制器16依照预先生成的目标分布,开始VCM30的位置控制(S22)。目标分布是规定了升降机构的目标移动位置的移动分布。控制器16以使根据所述目标分布求出的指令位置与检测位置Pd的差量接近零的方式对VCM 30进行位置反馈控制。此处,如上所述,检测位置Pd受到安装工具20、载台12的热膨缩的影响而在与载台12的上表面和安装工具20的底面的距离Dr之间产生背离。即,控制器16检测通过载台12、安装工具20的热膨胀而与距变形消除后的载台12的高度H1的距离Dr不同的位置作为检测位置Pd。目标分布是以使由所述热膨缩引起的误差抵消而实际的间隙量G保持目标值的方式设定。
具体而言,参照图6进行说明。在以变形消除后的距离D1为基准将安装工具20的距离Dr保持为一定的情况下,检测位置Pd受到安装工具20的热膨缩的影响,因此如图6(a)中的双点划线那样发生变化。即,维持为Dr=D1时的检测位置Pd在接通工具加热器26的时刻t3以上逐渐上升,在断开工具加热器26的时刻t8以后逐渐下降。另一方面,为了将间隙量G设为目标值,需要使距离Dr自高度D1进一步缩小目标挤扁量Gd。为了实现此种距离Dr的移动,只要将自双点划线所表示的位置减去目标挤扁量Gd后的位置作为指令位置,对升降机构进行位置控制即可。
步骤S22中所使用的目标分布是表示自所述双点划线所表示的位置减去目标挤扁量Gd后的位置的分布。依照所述目标分布,通过对VCM 30进行位置控制,可将距离Dr保持为一定,可将间隙量G保持为目标值。再者,此种目标分布是在接合之前生成,对于此也将在以后叙述。
控制器16依照事先设定的温度分布断开工具加热器26(S24)。由此,一度熔融的凸块104的温度急剧降低,并硬化。在图6的例子中,在时刻t8,断开工具加热器26。由此,凸块104硬化。另外,通过断开工具加热器26,升降机构(尤其是滑动轴32)的温度也降低,升降机构的热膨缩得以消除。在温度降低后、或同时,依照目标分布使安装工具20下降。
然后,若自断开工具加热器26起经过了规定的硬化时间Tb(S26中为是),则控制器16判断为凸块104硬化。再者,硬化时间Tb可基于事先的实验、或过去的经验等预先规定。若经过了硬化时间Tb,则控制器16解除安装工具20对半导体芯片100的保持,其后使安装工具20上升(S28)。然后,由此,一个半导体芯片100的接合处理结束。以后,对于其他半导体芯片100也重复相同的处理。
如根据以上的说明而明确那样,在本例中,在凸块104即将熔融之前,通过在上升方向上驱动VCM 30,从而消除接合头14的变形。结果,在凸块104熔融时,可有效地防止安装工具20过度地向下方移动而过度地压扁凸块104的情况。
另外,在本例中,预先取得凸块104熔融的时间点(即熔融时间Tm),在凸块104熔融之前,自载荷控制切换为位置控制。通过设为所述结构,可防止过度地压扁凸块104的情况。即,现有技术大多进行对半导体芯片100赋予一定的载荷的载荷控制,此时,若检测位置Pd下降一定以上,则判断为凸块104熔融。在此种技术的情况下,在凸块104熔融的时点,安装工具20大幅下降,间隙量G变得小于目标值。例如,在专利文献1中,在凸块104熔融的时点,间隙量G变得小于目标值。因此,在专利文献1中,在间隙量G变得小于目标值之后,通过使安装工具上升,从而将间隙量G修正为目标值。然而,若暂且如专利文献1那样大幅压扁凸块104,则横向扩展的凸块104与邻接的凸块104接触,有可能引起短路不良。另一方面,如本例那样,通过自凸块104即将熔融之前切换为位置控制,从而凸块104不会被过度地挤扁,可有效地防止短路不良。
接着,对此种接合处理中使用的变形消除量Aa、待机时间Ta、目标分布的取得进行说明。制造装置10在开始半导体装置的制造之前,进行变形消除量检测处理、熔融时间点检测处理、以及目标分布生成处理。以下,对这些处理进行说明。
首先,参照图7、图8对变形消除量检测处理进行说明。如上所述,在接合处理中,在凸块104即将熔融之前,在上升方向上以变形消除量Aa的量驱动VCM 30,由此,消除接合头14(尤其是安装工具20及滑动轴32)的变形。此时所使用的变形消除量Aa是通过在接合处理之前进行的变形消除量检测处理而检测出。图7是表示所述变形消除量检测处理的流程的流程图,图8是表示变形消除量检测处理中的检测位置Pd及检测载荷Fd的变化的图表。
在进行变形消除量检测处理时,在不保持半导体芯片100的状态下使用安装工具20。另外,预先在安装工具20的底面、或基板110的上表面配置载荷传感器(例如,测力器(load cell)等),以便可将安装工具20对基板110的按压载荷作为检测载荷Fd来进行检测。进而,将安装工具20及基板110设为彼此相同的预先规定的温度。若此种事先的准备完备,则控制器16驱动升降机构,使未保持半导体芯片100的安装工具20下降直至着落到基板110为止(S30、S32)。在图8的例子中,在检测位置Pd的变动停止的时刻t2判断为已着落。再者,此时,按照安装工具20以标准载荷Fs按压基板110的方式调整对VCM 30施加的电流。再者,预先规定的温度例如为室温(20℃),也可利用加热器对工具及载台进行加热而设为50℃或100℃。另外,在本例中,将通过变形消除量检测处理而检测出的变形消除量Aa设为变形消除处理中的VCM 30的上升量。然而,变形消除处理中的VCM 30的上升量也可为对所述变形消除量Aa进行了某些校正后的值。
若使安装工具20着落到基板110,则控制器16将所述时点的检测位置Pd作为P[0]存储于存储器中(S34)。在图8的例子中,将时刻t2时的检测位置Pd作为P[0]加以存储。继而,控制器16对参数i进行初始化,设为i=1(S35)。其后,控制器16对VCM 30在上升方向上以规定的单位间距进行驱动(S36)。即,驱动VCM 30,直至由线性编码器50检测出的检测位置Pd变化单位间距的量。单位间距的值并无特别限定,可设定为较由滑动轴32的变形引起的检测误差而言充分小的值。在图8的例子中,在时刻t3,完成第一次的单位间距的量的上升驱动。通过在上升方向上驱动VCM 30,从而按压载荷稍微降低,相应地,滑动轴32等的变形也稍微得到消除。
若单位间距量的向上升方向的驱动完成,则控制器16将所述时点的检测载荷Fd及检测位置Pd分别作为F[i]、P[i]存储于存储器中(S38)。继而,控制器16将当前的检测载荷F[i]、与N次前的检测载荷F[i-N]加以比较(S40)。再者,N为1以上的整数。在比较的结果是F[i]≒F[i-N]不成立的情况下(S40中为否(No)),可判断为因单位间距的上升而检测载荷Fd发生变化。所述情况下,控制器16前进到步骤S42,使参数i增量,然后再次执行步骤S38、步骤S40。另外,虽然在流程图中并未记载,但是在i<N、不存在N次前的检测负荷F[i-N]的情况下,也前进到步骤S42。
另一方面,在F[i]≒F[i-N]成立的情况下(S40中为是),即、即便在上升方向上驱动VCM 30而检测载荷Fd也不变动的情况下,将P[i-N]-P[0]作为变形消除量Aa存储于存储器中(S44)。P[i-N]-P[0]是自开始VCM 30向上升方向的驱动起至检测载荷Fd的变动停止为止的升降机构的移动量。
作为N=3,若参照图8的例子进行说明,则在时刻t8的时点,由于F[i]为Fa、F[i-3]为Fb,因此F[i]≠F[i-N]。因此,所述情况下,控制器16不前进到步骤S44,而是前进到步骤S42。继而,若成为时刻t9,则F[i]=Fa、F[i-3]=Fa,因此F[i]≒F[i-N]成立。所述情况下,控制器16前进到步骤S44。此处,在时刻t9,P[i-3]为时刻t6时的检测位置Pd,P[0]为时刻t2时的检测位置Pd。因此,所述情况下,变形消除量Aa成为如图8所示那样。如此,通过事先通过实验取得变形消除量Aa,可在接合处理中更确实地消除升降机构的变形。
接着,参照图9、图10对熔融时间点检测处理进行说明。如上所述,在接合处理中,在凸块104即将熔融之前执行变形消除处理。为了在所述时间点执行变形消除处理,需要事先掌握凸块104熔融的时间点。因此,在本例中,在接合处理之前,进行熔融时间点检测处理。图9是表示所述熔融时间点检测处理的流程的流程图,图10是表示熔融时间点检测处理中的检测位置Pd、按压载荷、以及工具加热器26的驱动状态的图表。
在进行熔融时间点检测处理时,预先利用安装工具20保持半导体芯片100。然后,控制器16驱动升降机构,使安装工具20下降直至半导体芯片100着落到基板110为止(S50、S52)。若半导体芯片100着落到基板110(S52中为是),则控制器16以将预先规定的标准载荷Fs赋予到半导体芯片100的方式开始升降机构的载荷控制(S54),并接通工具加热器26(S56)。在图10的例子中,在时刻t1检测到着落,其后将一定载荷赋予到半导体芯片100。进而,在时刻t2,接通工具加热器26。
若工具加热器26接通,则控制器16监视由线性编码器50检测出的检测位置Pd的变动,在检测位置Pd降低了规定的基准位移量Δs以上的情况下,判断为凸块104熔融。具体而言,控制器16将参数i初始化,设为i=0(S58)。进而,将当前的检测位置Pd作为P[i]存储于存储器中(S60)。进而,控制器16将当前的检测位置P[i]与上次的检测位置P[i-1]的差量值、和预先规定的基准位移量Δs加以比较(S62)。在比较的结果是P[i]-P[i-1]<Δs的情况下(S62中为否),控制器16前进到步骤S64,使参数i增量,之后再次进行步骤S60、步骤S62。另外,虽然在流程图中并未记载,但i=0、P[i-1]不存在的情况下,也不前进到步骤S66,而是前进到步骤S64。
另一方面,在P[i]-P[i-1]≧Δs的情况下(S62中为是),可判断为凸块104熔融。所述情况下,控制器16将自接通工具加热器26起的经过时间作为熔融时间Tm存储于存储器中(S66)。在图10的例子中,在时刻t3,检测位置Pd急剧地降低,因此在所述时刻t3,可判断为凸块104熔融。而且,所述情况下,将自时刻t2至时刻t3为止的时间作为熔融时间Tm存储于存储器中。若可取得熔融时间Tm,则控制器16断开工具加热器26,使安装工具20上升(S68)。由此,熔融时间点检测处理结束。
在接合处理时,将自所述熔融时间Tm中减去若干富余量α而得的值用作待机时间Ta。如此,通过在接合处理之前,预先通过实验检测凸块104的熔融时间点,可在凸块104即将熔融之前进行变形消除处理。结果,可防止在凸块104熔融时安装工具20瞬间大幅下降的情况。而且,结果,可防止凸块104的过度的挤扁。
接着,参照图11、图12对目标分布生成处理进行说明。如上所述,在接合处理中,在凸块104熔融之后,通过以使接合头14的热膨缩抵消的方式对升降机构进行位置控制,从而将间隙量G保持为规定的目标值。在目标分布生成处理中,生成所述位置控制中所使用的目标分布。图11是表示所述目标分布生成处理的流程的流程图,图12是表示目标分布生成处理中的各种参数的变化的图。更具体而言,图12(a)是表示目标分布生成处理中所取得的参照分布90的图表,图12(b)是表示目标分布生成处理中的工具加热器26的驱动状态的图表。图12(c)是表示经偏移处理后的参照分布90*、理想分布92、目标分布94的图表。
在进行目标分布生成处理时,安装工具20设为未保持半导体芯片100的状态。然后,控制器16驱动升降机构,使未保持半导体芯片100的安装工具20下降直至着落到基板110为止(S70、S72)。若安装工具20着落到基板110,则控制器16开始工具加热器26的控制(S76)。所述工具加热器26的控制是与接合处理同样地依照温度分布进行。即,在接合处理中,接通工具加热器26的时间点、或断开工具加热器26的时间点被预先规定,将此种时间点作为温度分布存储于控制器16的存储器中。在步骤S76中,开始依照所述温度分布的工具加热器26的控制。另外,控制器16使参数i初始化,设为i=0(S78)。若开始工具加热器26的控制,则控制器16以规定的采样间隔重复将当前的检测位置Pd作为P[i]存储于存储器中的处理(S80)、以及使参数i增量(S84)的处理直至到达接合处理的结束时间点为止(直至S82中为是为止)。
在图12的例子中,在时刻t1,开始工具加热器26的控制,在时刻t1,接通工具加热器26。所述时刻t1时的检测位置Pd(参照图12(a)的图表)作为初始位置P[0]而被存储于存储器中。通过温度分布开始并接通工具加热器26,从而安装工具20及滑动轴32的温度逐渐上升,这些发生热膨胀。结果,尽管安装工具20的底面的位置没有发生变化,但由线性编码器50检测出的检测位置Pd仍逐渐上升。进而,在图12的例子中,在时刻t3,滑动轴32等的热膨胀收敛,检测位置Pd也变得一定。其后,在时刻t4,若为了开始冷却而断开工具加热器26,则滑动轴32等的温度降低,热膨胀得到消除。因此,在时刻t4以后,检测位置Pd逐渐下降。而且,在滑动轴32等的温度返回到预先规定的温度的时刻t5以后,检测位置Pd保持一定值。而且,在作为结束时间点的时刻t6,结束检测位置Pd的取得。在步骤S80~步骤S84中,取得所述图12(a)所示的数据作为参照分布90。自所述参照分布90中减去熔融时间Tm-富余量α(图12的时刻ta)时的位置P[i]的值而得的值为接合头14的热膨胀量。
若获得参照分布90,则控制器16基于预先存储的理想分布92、与所述参照分布90生成目标分布94(S86)。理想分布92是接合头14为不产生热膨胀或变形的理想状态时的移动分布。
在图12(c)中,实线表示目标分布94,双点划线表示理想分布92,一点划线表示使时刻ta时的位置与理想分布92一致、即经偏移处理后的参照分布90*。如图12所示,在理想分布92中,在凸块104熔融的时刻t2,下降目标挤扁量Gd,以后,维持相同的高度位置。然后,在凸块104硬化的时刻t6以后上升。
目标分布94可通过对所述理想分布92加上根据参照分布90求出的接合头14的热膨胀量而获得。如上所述,热膨胀量是通过自参照分布90中减去熔融时间Tm-富余量α(时刻ta)时的位置P[i]的值而求出。通过将所述热膨胀量与理想分布92相加,可获得图12(c)的图表中实线所示那样的目标分布94。在实际的接合处理时,依照所述目标分布94对升降机构进行位置控制。而且,通过使用所述目标分布94,即便接合头14热膨胀,也可将安装工具20的底面位置、进而间隙量G保持为一定。
如根据以上说明而明确那样,根据本例,事先取得了变形消除量Aa、熔融时间点、目标分布。然后,在实际的接合处理时,在凸块104的熔融前,在上升方向上以变形消除量Aa的量驱动升降机构,消除接合头14的变形,之后依照使热膨胀抵消的目标分布驱动升降机构。通过设为所述结构,可有效地防止将熔融的凸块104过度地挤扁,可良好地保持半导体装置的品质。再者,目前为止所说明的结构是一例,只要在凸块104的熔融前,在上升方向上驱动升降机构来消除接合头14的变形,之后以使热膨胀抵消的方式驱动升降机构,则其他结构也可适宜变更。例如,在所述说明中,通过事先的实验(变形消除量检测处理)取得了变形消除处理中的升降机构的移动量即变形消除量Aa,但变形消除量Aa也可通过其他方法取得。例如,也可设为基于接合头14的刚性或在第一处理中对半导体芯片100附加的标准载荷Fs进行仿真,取得变形消除量Aa。
另外,变形消除处理的执行时间点只要为凸块104的熔融前,则未必为即将熔融之前。另外,在所述说明中,在熔融时间点检测处理中,基于检测位置Pd的变化来判断凸块104的熔融,但也可基于其他参数、例如按压载荷的变化等来判断凸块104的熔融。另外,本例的升降机构具有以VCM 30为驱动源的第一单元24a、以及以升降马达40为驱动源的第二单元24b,但升降机构只要可进行载荷控制及位置控制两者,其结构也可适宜变更。
符号的说明
10:半导体装置的制造装置
12:载台
14:接合头
16:控制器
18:XY载台
20:安装工具
24a:第一单元
24b:第二单元
26:工具加热器
30:音圈马达/VCM
32:滑动轴
34:板簧
36:引导构件
38:基座构件
40:升降马达
42:导螺杆
44:移动块
46:移动体
48:导轨
50:线性编码器
90:参照分布
92:理想分布
94:目标分布
100:半导体芯片
102:芯片主体
104:凸块
110:基板
112:电极
Claims (5)
1.一种半导体装置的制造装置,其特征在于包括:
载台,支撑基板;
接合头,具有对芯片底面设置有凸块的芯片进行保持的安装工具、为了对所述芯片进行加热而搭载于所述安装工具的工具加热器、以及使所述安装工具在铅垂方向上移动的升降机构;以及
控制器,进行控制所述接合头的驱动并将所述芯片接合到所述基板的接合处理,并且
所述控制器在所述接合处理中包括:
第一处理,在使所述芯片着落到所述基板后,驱动所述工具加热器及所述升降机构,开始所述芯片的加热,同时对所述芯片向所述基板进行加压;
变形消除处理,在所述第一处理后且所述凸块的熔融前,通过在上升方向上驱动所述升降机构而消除所述接合头的变形;以及
第二处理,在所述变形消除处理后,通过以使所述接合头的热膨缩抵消的方式对所述升降机构进行位置控制,从而将所述芯片的底面与所述基板的上表面的间隙保持为规定的目标值。
2.根据权利要求1所述的半导体装置的制造装置,其特征在于
所述控制器在所述接合处理之前进行变形消除量检测处理,
在所述变形消除量检测处理中,在将所述安装工具及所述载台保持为预先规定的温度的状态下,驱动所述升降机构,利用所述安装工具按压所述基板,之后一面在上升方向上驱动所述升降机构,一面检测所述安装工具对所述基板的按压载荷,并将自开始向所述上升方向的驱动起至所述按压载荷的变动停止为止的所述升降机构的移动量作为变形消除量加以存储,
在所述变形消除处理中,基于所述变形消除量在上升方向上驱动所述升降机构。
3.根据权利要求1或2所述的半导体装置的制造装置,其特征在于
所述控制器在将所述芯片接合处理到所述基板之前,进行检测所述凸块的熔融时间点的熔融时间点检测处理,
在所述熔融时间点检测处理中,在使所述芯片着落到所述基板后,依照规定的温度分布对所述芯片进行加热,并将自所述加热的开始起至所述凸块熔融为止的时间作为熔融时间加以存储,
所述控制器基于所述熔融时间,决定所述变形消除处理的执行时间点。
4.根据权利要求1至3中任一项所述的半导体装置的制造装置,其特征在于
所述升降机构具有:滑动轴,与所述安装工具机械性地连接;驱动源,使所述滑动轴升降;以及位置传感器,将所述滑动轴的轴向位置作为检测位置来进行检测,
所述控制器在所述接合处理之前进行目标分布生成处理,
在所述目标分布生成处理中,驱动所述升降机构,使所述安装工具着落到所述基板或载台后,依照规定的温度分布对所述安装工具进行加热,并基于此时获得的由所述位置传感器检测到的检测位置的变化,取得所述接合头的热膨胀量,生成使所述热膨胀量抵消的移动分布作为目标分布,
在所述第二处理中,依照所述目标分布对所述升降机构进行位置控制。
5.一种半导体装置的制造方法,对具有安装工具、搭载于所述安装工具的工具加热器以及使所述安装工具在铅垂方向上移动的升降机构的接合头进行驱动,从而将保持于所述安装工具的芯片接合到支撑于载台的基板,所述半导体装置的制造方法的特征在于包括:
第一步骤,在使所述安装工具下降以使所述芯片着落到所述基板后,驱动所述工具加热器及所述升降机构,开始所述芯片的加热,同时对所述芯片向所述基板进行加压;
变形消除步骤,在所述第一步骤后且设置于所述芯片的底面的凸块的熔融前,通过在上升方向上驱动所述升降机构而消除所述接合头的变形;以及
第二步骤,在所述变形消除步骤后,通过以使所述接合头的热膨缩抵消的方式对所述升降机构进行位置控制,从而将所述芯片的底面与所述基板的上表面的间隙量保持为规定的目标值。
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