CN114300434A - 半导体装置及半导体装置的制造方法 - Google Patents
半导体装置及半导体装置的制造方法 Download PDFInfo
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- CN114300434A CN114300434A CN202111138086.0A CN202111138086A CN114300434A CN 114300434 A CN114300434 A CN 114300434A CN 202111138086 A CN202111138086 A CN 202111138086A CN 114300434 A CN114300434 A CN 114300434A
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Abstract
本发明的半导体装置包括:散热器;经由第一接合材料而接合到散热器的半导体元件;经由第二接合材料而接合到散热器的第一引线框;经由第三接合材料而接合到半导体元件的第二引线框;以及模塑树脂,在将第三接合材料和模塑树脂的边界部分用与散热器的一个面垂直的平面切断后而得到的截面形状中,将第三接合材料与半导体元件的接合面的端点和第三接合材料与第二引线框的接合面的端点相连结的直线和半导体元件的一个面形成的两个角度中,第三接合材料侧的角度为90°以上135°以下。
Description
技术领域
本申请涉及半导体装置以及半导体装置的制造方法。
背景技术
对于安装有功率用半导体元件的半导体装置,近年来,正在推进大容量化。由于半导体元件中流过大电流,需要使成为经由接合材料连接到半导体元件的主端子的引线框大型化。由于引线框大型化,因此因半导体元件、引线框和接合材料各自的线膨胀系数的不同,而导致对半导体元件产生的热变形力变大。当热变形力变大时,半导体元件有时会产生裂纹。为了降低热变形力,一般采用由树脂对半导体元件、引线框和接合材料密封的结构。
作为由树脂对半导体元件、引线框和接合材料密封的半导体装置,使用由环氧树脂等热硬化型的模塑树脂密封的传递模塑型半导体装置、以及用凝胶状的树脂密封的凝胶密封型半导体装置。特别是传递模塑型半导体装置小型且可靠性优异,因此广泛用于功率控制等。
除了用模塑树脂对半导体元件、引线框和接合材料密封的结构之外,为了进一步抑制半导体元件中产生的裂纹,还公开了将与半导体元件接合的主端子的电极厚度局部变薄的结构(例如参照专利文献1)。通过使与半导体元件接合的主端子的电极厚度局部变薄,从而能够降低对半导体元件产生的热变形力,进一步抑制半导体元件的裂纹产生。
现有技术文献
专利文献
专利文献1:日本专利特开2008-16529号公报
发明内容
发明所要解决的技术问题
在上述专利文献1中,能够进一步抑制由对半导体元件产生的热变形力引起的半导体元件的裂纹产生。但是,由于使与半导体元件接合的主端子的电极厚度局部变薄,所以存在主端子的结构变得复杂,难以实现半导体装置的小型化和低成本化的问题。另外,在树脂密封型半导体装置内部安装有两个以上的半导体元件的情况下,存在主端子的电极结构更加复杂且大型化,难以进一步实现半导体装置的小型化及低成本化的问题。
因此,本申请的目的在于得到一种树脂密封型半导体装置,该树脂密封型半导体装置在容易地抑制半导体元件的裂纹产生的同时,实现小型化和低成本化。
用于解决技术问题的技术手段
本申请所公开的半导体装置中,包括:形成为板状的散热器;半导体元件,该半导体元件形成为板状,其另一个面经由第一接合材料而接合到散热器的一个面;第一引线框,该第一引线框的另一个面经由第二接合材料而接合到散热器的一个面;第二引线框,该第二引线框的另一个面经由第三接合材料而接合到半导体元件的一个面;以及模塑树脂,该模塑树脂使第一引线框的一部分和第二引线框的一部分露出至外部,对散热器、半导体元件、第一引线框以及第二引线框进行密封,在半导体元件的一个面和第二引线框的另一个面之间的间隙设置有第三接合材料与模塑树脂的边界,在将边界部分用与散热器的一个面垂直的平面切断后而得到的截面形状中,将第三接合材料与半导体元件的接合面的端点和第三接合材料与第二引线框的接合面的端点相连结的直线和半导体元件的一个面形成的两个角度中,第三接合材料侧的角度为90°以上135°以下。
发明效果
根据本申请所公开的半导体装置,由于在将第三接合材料与模塑树脂的边界部分用与散热器的一个面垂直的平面切断后而得到的截面形状中,将第三接合材料与半导体元件的接合面的端点和第三接合材料与第二引线框的接合面的端点相连结的直线和半导体元件的一个面形成的角度中,第三接合材料侧的角度为90°以上135°以下,因此不会导致作为主端子的第二引线框的结构复杂且大型化,能够降低半导体元件的最大应力发生部位的最大应力,因此能够容易地抑制半导体元件的裂纹产生,同时实现树脂密封型半导体装置的小型化和低成本化。
附图说明
图1是表示实施方式1所涉及的半导体装置的概要的俯视图。
图2是在图1的A-A截面位置处切断的半导体装置的主要部分剖视图。
图3是表示半导体元件中产生的最大应力相对于接合角度的图。
图4是表示本发明实施方式1所涉及的半导体装置的制造工序的图。
图5是表示实施方式1所涉及的半导体装置的概要的主要部分剖视图。
图6是说明比较例的半导体装置的俯视图。
图7是说明比较例的半导体装置的剖视图。
图8是表示本发明实施方式2所涉及的半导体装置的制造工序的图。
具体实施方式
以下,基于附图对本申请的实施方式所涉及的半导体装置进行说明。另外,各图中关于相同或相当的构件、部位,标注相同标号来进行说明。
实施方式1.
图1是表示实施方式1所涉及的半导体装置100的概要的俯视图、图2是在图1的A-A截面位置处切断的半导体装置100的主要部分剖视图、图3是表示半导体元件2的最大应力发生部位12中产生的最大应力值相对于接合角度5的图、图4是表示半导体装置100的制造工序的图、图5是表示实施方式1所涉及的其他半导体装置100的概要的主要部分剖视图。图1是表示去除了模塑树脂9的图,两点划线是模塑树脂9的外形。图2和图5还示出了包含模塑树脂9。在图1的A-A截面位置处,半导体装置100是左右对称的结构,所以图2仅示出了A-A截面位置的右侧部分。图2的A-A截面位置是包含半导体元件2的截面,但在包含配置在图1中半导体元件2旁边的半导体元件1在内的截面中也是同样的结构。另外,这些图是示意性地示出的,与实际的半导体装置100的各部的尺寸关系并不相同。半导体装置100是用模塑树脂9密封半导体元件1、2而得的树脂密封型的半导体装置100,例如用于功率控制。
<半导体装置100>
半导体装置100包括形成为板状的半导体元件1、2、形成为板状的散热器3、第一引线框10、11、第二引线框6以及模塑树脂9。例如,半导体元件1是开关元件,半导体元件2是整流元件。在本实施方式中设置了这两个半导体元件1、2,但是半导体装置100所具备的半导体元件不限于两个,根据半导体装置100的用途等,半导体元件也可以是一个或三个以上。另外,半导体元件1、2是在一个面以及另一个面双方都具有电极焊盘(未图示)的纵向型结构的半导体,但半导体元件1、2不限于纵向型结构的半导体,也可以是仅在一个面上具备电极焊盘的横向型结构的半导体元件。
半导体元件1、2的另一面经由第一接合材料即芯片下接合材料(未示出)而接合到散热器3的一个面3a。第一引线框10、11的另一个面经由第二接合材料即引线接合材料(未示出)而接合到散热器3的一个面3a。第二引线框6的另一个面经由第三接合材料即芯片上接合材料4而接合到半导体元件1、2各自的一个面的有源面部即电极焊盘。模塑树脂9使第一引线框10、11的一部分及第二引线框6的一部分露出至外部,且模塑树脂9将散热器3、半导体元件1、2、第一引线框10、11及第二引线框6密封。芯片下接合材料、芯片上接合材料4以及引线接合材料也通过模塑树脂9来密封。半导体元件1、2经由露出到外部的第一引线框10、11以及第二引线框6而连接至半导体装置100的外部。
半导体元件1是IGBT(Insulated Gate Bipolar Transistor、绝缘栅双极晶体管)或MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor、场效应晶体管)等通过开关动作来进行功率转换的开关元件。IGBT通过向负载流过大电流来驱动负载。半导体元件2是回流二极管等整流器元件。半导体元件1、2的材料例如是硅(Si)。半导体元件1、2的材料不限于硅,例如,只要是从由碳化硅(SiC)、氮化镓(GaN)等氮化镓类材料以及金刚石组成的组中选择的材料即可。这些材料是带隙比硅更宽的所谓宽带隙半导体材料。在使用宽带隙半导体材料来形成半导体元件1、2的情况下,与硅制半导体元件相比,能够在更高的温度下使半导体元件1、2动作。即,宽带隙半导体材料是适于流过大电流的半导体材料。另外,在使用宽带隙半导体的情况下,由于容许电流密度高,功率损耗低,所以能使半导体装置100小型化。另外,也可以在半导体装置100中混合装载硅制的半导体元件和宽带间隙半导体。
散热器3、第一引线框10、11和第二引线框6是导电性和导热性优异的金属,例如通过切削加工或冲压加工来制作。导电性良好的金属中,纯铜或以铜为主要成分的铜合金等铜材料从电阻、加工性、成本等方面最适合作为这些材料。散热器3的另一个面3b未被模塑树脂9密封而露出至模塑树脂9的外部。由半导体元件1、2产生的热量从另一个面3b向外部散热。成为输入输出端子的第一引线框10、11经由散热器3与半导体元件1、2的另一个面侧的电极焊盘连接。作为主端子的第二引线框6在半导体装置100的外部与负载连接。在第二引线框6的另一个面形成有分别向半导体元件1、2突出的突出部7。在通过凸起加工在第二引线框6上形成突出部7的情况下,能够较容易地在第二引线框6的另一个面上形成突出部7。另外,在通过凸起加工形成突出部7的情况下,在第二引线框6的一个面上形成阶梯凹部8。后面将说明设置突出部7的理由。
模塑树脂9使用热硬化性树脂材料,例如是填充有热膨胀系数小的熔融二氧化硅等硬质无机粉末的环氧树脂。模塑树脂9不需要高热传导性,因此,对于热硬化性树脂中所含有的无机填充材料,含于热硬化性树脂时流动性较好、线膨胀系数的调整较为容易的氧化硅(二氧化硅)中熔融二氧化硅最佳。尽管取决于半导体装置100的散热性、动作时的发热量和动作温度,但是环氧树脂能够使用一般的双酚型或苯酚型酚醛型环氧树脂(phenol-novolac-type epoxy resin)等。此外,只要能够将半导体元件1和2密封保护,则模塑树脂9并不限于这些材料。例如,随着半导体元件1、2的动作温度的升高,可以使用萘型或多官能型的耐热性高的树脂作为模塑树脂9。
优选将具备接近于散热器3、第一引线框10、11和第二引线框6的线膨胀系数的线膨胀系数的树脂用于模塑树脂9,以防止因模塑树脂9与散热器3、第一引线框10、11和第二引线框6的线膨胀系数的不同而导致对半导体元件1、2产生的热变形力变大。在用纯铜形成散热器3、第一引线框10、11和第二引线框6的情况下,由于纯铜的线膨胀系数是16[ppm/K]到17[ppm/K],所以优选模塑树脂9的线膨胀系数在近似于纯铜的线膨胀系数的15[ppm/K]到18[ppm/K]的范围内。模塑树脂9的线膨胀系数能够通过调整无机填充料的量来进行变更。通过调整模塑树脂9的线膨胀系数从而使其近似于纯铜的线膨胀系数,能够降低半导体装置100内部的热变形力,因此能够提高半导体装置100相对于温度循环的可靠性。
芯片下接合材料优选从由焊接材料、以银为主要成分的烧结性填料、以银为主要成分的钎料、锡中分散了铜的材料、以金为主要成分的金锡、金锗等金类合金构成的组中选择的接合材料。由于这些接合材料具有高热传导性和导电性,因此能够将散热器3和半导体元件1、2热连接和电连接。引线接合材料例如使用焊接材料,以确保散热器3与第一引线框10、11之间的电导通。芯片上接合材料4例如使用焊接材料,以确保半导体元件1、2与第二引线框6之间的电导通。由于当芯片上接合材料4的强度低时在芯片上接合材料4中产生裂纹,因此在将焊接材料用于芯片上接合材料4的情况下,抗拉强度约为40MPa以上的高强度材料即焊接材料最适合作为芯片上接合材料4。
<比较例>
在对作为本申请的主要部分的芯片上接合材料4的结构进行说明之前,使用图6以及图7对比较例进行说明。图6是表示比较例的半导体装置101的概要的俯视图,图7是说明比较例的半导体装置101的剖视图、是在图6的B-B截面位置处切断的半导体装置101的主要部分剖视图。图6是表示去除了模塑树脂9的图,两点划线是模塑树脂9的外形。图7还示出了包含模塑树脂9。在图6的B-B截面位置处,半导体装置101是左右对称的结构,所以图7仅示出了B-B截面位置的右侧部分。图7的B-B截面位置是包含半导体元件2的截面,但在包含配置在图6中半导体元件2旁边的半导体元件1在内的截面中也是同样的结构。半导体装置101与半导体装置100同样地,包括半导体元件1、2、散热器3、第一引线框10、11、第二引线框6以及模塑树脂9。
对半导体装置101和半导体装置100的不同点进行说明。突出部7没有形成在第二引线框6的另一个面。将半导体元件1、2和第二引线框6相接合的芯片上接合材料4a是低强度的材料。将半导体元件1、2的一个面与第二引线框6的另一个面之间的间隙中的芯片上接合材料4a与模塑树脂9之间的边界部分用与散热器3的一个面垂直的平面来切断,在切断后得到的截面形状中,将芯片上接合材料4a与半导体元件1、2的接合面的端点和芯片上接合材料4a与第二引线框6的接合面的端点相连结的直线、与半导体元件1、2的一个面所形成的两个角度中,芯片上接合材料4a侧的角度(以下称为接合角度5)是锐角。另外,芯片上接合材料4a为低刚性。
半导体装置101构成为芯片上接合材料4a的材料强度是低强度,芯片上接合材料4a具有低刚性和锐角的接合角度5,并且半导体元件1、2等被模塑树脂9密封。通过这样构成,利用因半导体元件1、2、第二引线框6和芯片上接合材料4a之间的线膨胀系数的不同而导致对半导体元件1、2产生的热变形力,来降低在半导体元件1、2的最大应力发生部位12处产生的最大应力,从而抑制了半导体元件1、2中裂纹的产生。然而,由于低强度、低刚性以及接合角度5为锐角的芯片上接合材料4a在几百次的冷热循环中会产生裂纹,因此芯片上接合材料4a的寿命变短。
<芯片上接合材料4的结构>
对作为本申请的主要部分的芯片上接合材料4的结构进行说明。在半导体元件1、2的一个面与第二引线框6的另一个面之间的间隙中设置有芯片上接合材料4和模塑树脂9之间的边界,在将边界部分用与散热器3的一个面垂直的平面来切断后得到的截面形状中,将芯片上接合材料4与半导体元件1、2的接合面的端点和芯片上接合材料4与第二引线框6的接合面的端点连结的直线、与半导体元件1、2的一个面形成的两个角度中,芯片上接合材料4侧的接合角度5在90°以上135°以下。在图2中,接合角度5c为90°,接合角度5f为135°。接合角度5d和接合角度5e是在90°以上且135°以下的范围内的接合角度5。接合角度5a和接合角度5b为小于90°的接合角度5。
使用示出了半导体装置100热变形时产生的应力的图3来对将接合角度5设定为90°以上135°以下的原因进行说明。图3是在对图2所示的树脂密封型半导体装置100重复施加-45℃到150℃的温度循环的情况下,相对于接合角度5绘制在半导体元件1、2的最大应力发生部位12处产生的最大应力值的图。半导体元件1、2的线膨胀系数为3[ppm/K]到5[ppm/K],芯片下接合材料的线膨胀系数为18[ppm/K]到20[ppm/K],芯片上接合材料4的线膨胀系数为21[ppm/K]到23[ppm/K],散热器3和第二引线框6的线膨胀系数为16[ppm/K]到17[ppm/K],模塑树脂9的线膨胀系数为15[ppm/K]到18[ppm/K]。
通过比较各材料的线膨胀系数,可知半导体元件1、2的线膨胀系数最小,芯片上接合材料4的线膨胀系数最大。半导体元件1、2是半导体材料,在半导体装置100中强度最低,因此需要降低对半导体元件1、2产生的应力。在半导体装置100进行从高温向低温的温度变化的情况下,在芯片上接合材料4上产生比半导体元件1、2更大的收缩力。因此,在半导体元件1、2的最大应力发生部位12处产生最大应力。
在芯片上接合材料4的接合角度5为锐角的情况下,由于芯片上接合材料4和第二引线框6的接合面积小,因此,在芯片上接合材料4中,仅在收缩方向上变形的力的比例占大多数。在芯片上接合材料4的接合角度5为90°到135°的情况下,由于芯片上接合材料4和第二引线框6的接合面积增加,因此,在芯片上接合材料4中,在扩大方向上变形的力的比例增加。因此,在半导体元件1、2的最大应力发生部位12的最大应力降低。在芯片上接合材料4的接合角度5大于135°的情况下,由于在扩大方向上变形的力的比例过大,因此,半导体元件1、2的最大应力发生部位12的最大应力增加。
在半导体装置100进行从低温向高温的温度变化的情况下,伴随温度变化而产生的力的方向相反,但是接合角度5和对半导体元件1、2产生的最大应力的相关关系不变。因此,通过在确保芯片上接合材料4的刚性的同时,将芯片上接合材料4的接合角度5设定在90°到135°的范围内,从而不会使第二引线框6的结构复杂且大型化,且能够降低半导体元件1、2的最大应力发生部位12的最大应力。通过降低半导体元件1、2的最大应力发生部位12的最大应力,能够得到一种树脂密封型半导体装置100,该树脂密封型半导体装置100能够容易地抑制半导体元件1、2的裂纹产生,同时能够实现小型化和低成本化。
为了确保芯片上接合材料4的刚性,在半导体元件1、2的一个面和第二引线框6的另一个面之间的间隙中的、芯片上接合材料4与模塑树脂9之间的边界部分的芯片上接合材料4的厚度优选为0.45~0.7mm。在本实施方式中,从由具有固定厚度(例如0.4mm)的固体构成的芯片上接合材料4起、在第二引线框6的另一个面上分别形成朝向半导体元件1、2突出的突出部7,以将芯片上接合材料4的厚度设为0.45~0.7mm,将接合角度5设为90°~135°。在将第二引线框6和半导体元件1、2相接合的回流加热时,突出部7按压与突出部7相接的芯片上接合材料4,通过按压而压出的芯片上接合材料4的部分流向边界部分的芯片上接合材料4和第二引线框6之间的接合面的端点侧,从而将接合角度5设为90°以上135°以下。高强度、高刚性及接合角度5在90°到135°范围内的芯片上接合材料4即使在几千次的冷热循环中也不会产生裂纹,因此芯片上接合材料4的寿命变长。由于芯片上接合材料4的寿命变长,所以半导体装置100成为高质量,并且能够提高半导体装置100的可靠性。
在本实施方式中,突出部7的形状是长方体,但是突出部7的形状不限于长方体。如果边界部分的芯片上接合材料4的厚度和接合角度5能够任意地设定,则突出部7的形状和个数等突出部7的结构也可以不是长方体。另外,虽然示出了通过凸起加工设置突出部7的例子,但是突出部7的形成方法不限于凸起加工,也可以通过切削加工形成突出部7。在通过切削加工形成突出部7的情况下,也可以不形成阶梯凹部8。
在本实施方式中,将芯片上接合材料4和半导体元件1、2的接合面的端点与芯片上接合材料4和第二引线框6的接合面的端点相连结的部分用直线来表示,但是连结了端点之间的部分不限于直线。连结端点之间的部分也可以是曲线。即使连结端点之间的部分是曲线,也可以通过将芯片上接合材料4的接合角度5设为90°到135°的范围,从而降低半导体元件1、2的最大应力发生部位12的最大应力。
在本实施方式中,通过在第二引线框6的另一个面形成突出部7,从而使边界部分的芯片上接合材料4的厚度变为0.45~0.7mm,接合角度5为90°以上135°以下。为了确保芯片上接合材料4的刚性,可以对芯片上接合材料4使用高强度材料,在使用高强度材料的情况下,不需要增加厚度,边界部分的芯片上接合材料4的厚度可以在0.4mm以下,由于能设为带状焊料的可制造厚度以下,因此如图5所示,不需要在第二引线框6上设置突出部7。通过调整熔融前的芯片上接合材料4的厚度和尺寸,从而能够将接合角度5设定在90°到135°的适当范围内。通过在确保芯片上接合材料4的刚性的同时,将芯片上接合材料4的接合角度5设定在90°到135°的范围内,从而能够降低半导体元件1、2的最大应力发生部位12的最大应力。
<半导体装置100的制造方法>
使用图4对半导体装置100的制造方法进行说明。半导体装置100由作为贴片工序的第1工序(S11)、作为回流工序的第2工序(S12)和第3工序(S13)、以及作为传递成型工序的第4工序(S14)制造。
第1工序是经由芯片下接合材料将形成为板状的半导体元件1、2的另一个面接合到形成为板状的散热器3的一个面3a的工序。首先,在散热器3的一个面3a上隔着间隔设置芯片下接合材料,并且将作为开关元件的半导体元件1和作为整流元件的半导体元件2配置在芯片下接合材料上。然后,将芯片下接合材料熔化,半导体元件1、2被接合到散热器3的一个面3a。
第2工序是经由引线接合材料将第一引线框10、11的另一个面接合到散热器3的一个面3a上的工序。首先,在散热器3的一个面3a的两侧的端部设置引线接合材料,将第一引线框10、11配置在引线接合材料上。然后,通过回流加热将引线接合材料熔化,在之后的冷却中,第一引线框10、11接合到散热器3的一个面3a。
第3工序是经由芯片上接合材料4将第二引线框6的另一个面接合到半导体元件1、2的一个面的工序。将由具有一定厚度的固体构成的芯片上接合材料4夹在第二引线框6的另一个面和半导体元件1、2的一个面之间,之后通过回流加热使芯片上接合材料4熔化后进行冷却,从而经由芯片上接合材料4将第二引线框6的另一个面接合到半导体元件1、2的一个面。在将芯片上接合材料4熔化后冷却时,将设置在半导体元件1、2的一个面和第二引线框6的另一个面之间的间隙中的芯片上接合材料4与芯片上接合材料4的外侧之间的边界部分用与散热器3垂直的一个面的平面来切断,在切断后得到的截面形状中,将芯片上接合材料4与半导体元件1、2的接合面的端点、和芯片上接合材料4与第二引线框6的接合面的端点相连结的直线、和半导体元件1、2的一个面形成的两个角度内,将芯片上接合材料4侧的角度设在90°以上135°以下。
芯片上接合材料4例如是厚度固定的带状焊料。通过使用固定厚度的带状焊料而不是厚度不固定的具有凹部或突起的焊料,从而能够抑制焊料的成本。当芯片上接合材料4的刚性低时,芯片上接合材料4容易发生裂纹。为了确保芯片上接合材料4的刚性,边界部分的芯片上接合材料4的厚度优选为0.45~0.7mm。带状焊料的可制造厚度为0.4mm左右。因此,在第二引线框6的另一个面形成分别向半导体元件1、2突出的突出部7,以便将芯片上接合材料4的厚度设为0.45~0.7mm。在回流加热时,按压与突出部7相接的芯片上接合材料4,通过按压而压出的芯片上接合材料4的部分流向边界部分的芯片上接合材料4和第二引线框6的接合面的端点的一侧,将芯片上接合材料4的厚度设为0.45~0.7mm,将芯片上接合材料4侧的接合角度5设为90°以上135°以下。通过调整熔融前的芯片上接合材料4的大小和第二引线框6的突出部7的大小,能够使芯片上接合材料4的使用量为最小限度,并且能够任意设定熔融后的芯片上接合材料4的厚度和接合角度5。通过这样构成,能够确保芯片上接合材料4的刚性,并且能够抑制半导体元件1、2的裂纹的产生。
第4工序是下述工序:使第一引线框10、11的一部分及第二引线框6的一部分露出至外部,并用由热硬化性树脂构成的模塑树脂9对散热器3、半导体元件1、2、第一引线框10、11及第二引线框6密封。
本实施方式中,在第3工序中经由芯片上接合材料4将第二引线框6的另一个面接合到半导体元件1、2的一个面,但第3工序并不限于此。第3工序也可以是下述工序:在第2引线框6搭载于半导体元件1、2后升温,将熔融后的芯片上接合材料4滴下供给到第2引线框6的另一个面和半导体元件1、2的一个面之间并冷却。通过设为这样的工序,消除了使第二引线框6的突出部7与熔融前的芯片上接合材料4接触的限制,因此扩大了第二引线框6的突出部7的尺寸的自由度。另外,由于能够调整芯片上接合材料4的供给量,所以能够进一步降低芯片上接合材料4的使用量。
另外,通过将作为第二接合材料的引线接合材料和作为第三接合材料的芯片上接合材料4设为同类或使用相同的接合材料,从而无需分开实施作为回流工序的第2工序(S12)和第3工序(S13),而能够以一次回流工序(S10)来实施第2工序和第3工序所涉及的所有接合。
如上所述,在实施方式1所涉及的半导体装置100中,将芯片上接合材料4和模塑树脂9的边界部分用与散热器3的一个面3a垂直的平面来切断,在切断后而得的截面形状中,将芯片上接合材料4与半导体元件1、2的接合面的端点和芯片上接合材4与第二引线框6的接合面的端点相连结而得的直线、与半导体元件1、2的一个面形成的角度的芯片上接合材料4侧的角度在90°以上135°以下,因此,能够在不使第二引线框6的结构复杂且大型化的情况下降低半导体元件1、2的最大应力发生部位12的最大应力,所以能够得到一种树脂密封型半导体装置100,在容易地抑制半导体元件1、2的裂纹产生的同时,实现小型化、以及低成本化。另外,在第二引线框6的另一个面的比边界部分更靠内侧的部分形成有分别朝向半导体元件1、2突出的突出部7的情况下,能够容易地将边界部分的芯片上接合材料4的厚度设为0.45~0.7mm、将接合角度5设为90°以上135°以下。另外,由于能够将芯片上接合材料4的使用量设为最小限度,所以能够提供更廉价的半导体装置100。另外,在通过凸起加工在第二引线框6上形成突出部7的情况下,能够较容易地在第二引线框6的另一个面上形成突出部7。
另外,在高强度、高刚性及接合角度5为90°至135°范围内的芯片上接合材料4的情况下,即使在几千次的冷热循环中,芯片上接合材料4也不会发生裂纹,因此能够延长芯片上接合材料4a的寿命。由于芯片上接合材料4a的寿命变长,所以半导体装置100成为高质量,并且能够提高半导体装置100的可靠性。
在实施方式1所涉及的半导体装置100的制造方法中,将由具有一定厚度的固体构成的芯片上接合材料4夹在第二引线框6的另一个面和半导体元件1、2的一个面之间,之后通过回流加热使芯片上接合材料4熔化后进行冷却,从而经由芯片上接合材料4将第二引线框6的另一个面接合到半导体元件1、2的一个面,因此,通过不使用厚度不固定的具有凹部或突起的焊料,而使用固定厚度的带状焊料,从而能够抑制焊料的成本。另外,在回流加热时,突出部7按压与突出部7相接的芯片上接合材料4,通过按压而压出的芯片上接合材料4的部分流向边界部分的芯片上接合材料4和第二引线框6的接合面的端点的一侧,从而将芯片上接合材料4侧的接合角度5设为90°以上135°以下,因此能够容易地将边界部分的芯片上接合材料4的厚度设为0.45~0.7mm,将接合角度5设为90°以上135°以下。
实施方式2.
对实施方式2所涉及的半导体装置100的制造方法进行说明。图8是表示半导体装置100的制造工序的图。实施方式2所涉及的半导体装置100的制造方法在一次工序(S10)中实施第1工序(S11)、第2工序(S12)和第3工序(S13)。
作为第一接合材料的芯片下接合材料、作为第二接合材料的引线接合材料和作为第三接合材料的芯片上接合材料4是由同类或相同材料构成的接合材料。由同类或相同材料构成的接合材料例如是由焊料构成的接合材料。通过使用由同类或相同材料构成的接合材料,从而无需分开实施作为贴片工序的第1工序(S11)和作为回流工序的第2工序(S12)以及第3工序(S13),而能够在一次回流工序(S10)中实施第1工程、第2工程和第3工程所涉及的所有接合。
如上所述,在实施方式2所涉及的半导体装置100的制造方法中,由于芯片下接合材料、引线接合材料和芯片上接合材料4是由同类或相同材料构成的接合材料,因而能够在一次回流工序(S10)中实施第1工序(S11)、第2工序(S12)和第3工序(S13),所以能够提高半导体装置100的生产性。另外,由于半导体装置100的生产性提高,所以能够提供更廉价的半导体装置100。
另外,本申请虽然记载了各种示例性的实施方式以及实施例,但是1个或多个实施方式所记载的各种特征、方式及功能并不仅限于适用特定的实施方式,也可以单独适用于实施方式,或者进行各种组合来适用于实施方式。
因此,可以认为未例示的无数变形例也包含在本申请说明书所公开的技术范围内。例如,设为包括对至少一个构成要素进行变形、追加或省略的情况,以及提取至少一个构成要素并与其他实施方式的构成要素进行组合的情况。
标号说明
1半导体元件
2半导体元件
3散热器
3a一个面
3b另一个面
4芯片上接合材料
4a芯片上接合材料
5接合角度
6第二引线框
7突出部
8阶梯凹部
9模塑树脂
10第一引线框
11第一引线框
12最大应力发生部位
100半导体装置
101半导体装置。
Claims (6)
1.一种半导体装置,其特征在于,包括:
形成为板状的散热器;
半导体元件,该半导体元件形成为板状,该半导体元件的另一个面经由第一接合材料而接合到所述散热器的一个面;
第一引线框,该第一引线框的另一个面经由第二接合材料而接合到所述散热器的一个面;
第二引线框,该第二引线框的另一个面经由第三接合材料而接合到所述半导体元件的一个面;以及
模塑树脂,该模塑树脂使所述第一引线框的一部分和所述第二引线框的一部分露出至外部,对所述散热器、所述半导体元件、所述第一引线框以及所述第二引线框进行密封,
在所述半导体元件的一个面和所述第二引线框的另一个面之间的间隙设置有所述第三接合材料与所述模塑树脂的边界,
在将所述边界部分用与所述散热器的一个面垂直的平面切断后而得到的截面形状中,将所述第三接合材料与所述半导体元件的接合面的端点和所述第三接合材料与所述第二引线框的接合面的端点相连结的直线和所述半导体元件的一个面形成的两个角度中,所述第三接合材料侧的角度为90°以上135°以下。
2.如权利要求1所述的半导体装置,其特征在于,
在所述第二引线框的另一个面的比所述边界部分更靠内侧的部分形成有朝向所述半导体元件突出的突出部。
3.一种半导体装置的制造方法,其特征在于,包括:
第1工序,该第1工序经由第一接合材料而将形成为板状的半导体元件的另一个面接合到形成为板状的散热器的一个面;
第2工序,该第2工序经由第二接合材料而将第一引线框的另一个面接合到所述散热器的一个面;
第3工序,该第3工序将由具有固定厚度的固体构成的第三接合材料夹在第二引线框的另一个面和所述半导体元件的一个面之间,之后通过回流加热使所述第三接合材料熔化后进行冷却,从而经由所述第三接合材料将所述第二引线框的另一个面接合到所述半导体元件的一个面,在将所述第三接合材料熔化后冷却时,在将设置在所述半导体元件的一个面和所述第二引线框的另一个面之间的间隙的所述第三接合材料与所述第三接合材料的外侧的边界部分用与所述散热器的一个面垂直的平面切断而得到的截面形状中,将所述第三接合材料与所述半导体元件的接合面的端点和所述第三接合材料与所述第二引线框的接合面的端点相连结的直线和所述半导体元件的一个面形成的两个角度中,将所述第三接合材料侧的角度设为90°以上135°以下;以及
第4工序,该第4工序使所述第一引线框的一部分和所述第二引线框的一部分露出至外部,由模塑树脂对所述散热器、所述半导体元件、所述第一引线框以及所述第二引线框密封。
4.如权利要求3所述的半导体装置的制造方法,其特征在于,
在所述第二引线框的另一个面的比所述边界部分更靠内侧的部分,形成为向所述半导体元件突出的突出部在所述回流加热时按压与所述突出部相接的所述第三接合材料,通过按压而压出的所述第三接合材料的部分流向所述边界部分的所述第三接合材料与所述第二引线框的接合面的端点的一侧,将所述第三接合材料侧的角度设为90°以上135°以下。
5.如权利要求3或4所述的半导体装置的制造方法,其特征在于,
所述第二接合材料和所述第三接合材料是由同类或相同材料构成的接合材料,
在一次工序中实施所述第2工序和所述第3工序。
6.如权利要求3或4所述的半导体装置的制造方法,其特征在于,
所述第一接合材料、所述第二接合材料和所述第二接合材料是由同类或相同材料构成的接合材料,
在一次工序中实施所述第1工序、所述第2工序和所述第3工序。
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