CN114203507A - 蚀刻方法及等离子体处理装置 - Google Patents

蚀刻方法及等离子体处理装置 Download PDF

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Publication number
CN114203507A
CN114203507A CN202111046522.1A CN202111046522A CN114203507A CN 114203507 A CN114203507 A CN 114203507A CN 202111046522 A CN202111046522 A CN 202111046522A CN 114203507 A CN114203507 A CN 114203507A
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CN
China
Prior art keywords
film
etching
gas
chamber
protective film
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Pending
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CN202111046522.1A
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English (en)
Chinese (zh)
Inventor
田中康基
永井龙
大类贵俊
须田隆太郎
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN114203507A publication Critical patent/CN114203507A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
CN202111046522.1A 2020-09-18 2021-09-06 蚀刻方法及等离子体处理装置 Pending CN114203507A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-157282 2020-09-18
JP2020157282A JP7374058B2 (ja) 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
CN114203507A true CN114203507A (zh) 2022-03-18

Family

ID=80645993

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111046522.1A Pending CN114203507A (zh) 2020-09-18 2021-09-06 蚀刻方法及等离子体处理装置

Country Status (5)

Country Link
US (1) US12347651B2 (https=)
JP (2) JP7374058B2 (https=)
KR (1) KR20220038273A (https=)
CN (1) CN114203507A (https=)
TW (1) TWI895499B (https=)

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* Cited by examiner, † Cited by third party
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US20250205788A1 (en) 2022-03-28 2025-06-26 Kyocera Corporation Cemented carbide and coated tool and cutting tool each using the same
JP2023171269A (ja) * 2022-05-19 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
TW202401563A (zh) * 2022-06-10 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理系統
JP7536941B2 (ja) * 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102733623B1 (ko) * 2022-11-11 2024-11-25 세메스 주식회사 기판 처리 장치의 챔버 내부 표면의 보호막 형성 방법
JP7765651B2 (ja) * 2023-07-12 2025-11-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20250201573A1 (en) * 2023-12-15 2025-06-19 Applied Materials, Inc. Methods for reducing photoresist and carbon etch rates in an icp process chamber using a silicon-based chamber pre-coat
WO2026058737A1 (ja) * 2024-09-11 2026-03-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム

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JPS61166030A (ja) * 1985-01-17 1986-07-26 Matsushita Electronics Corp レジストエツチ速度抑制方法
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
EP0648858A1 (en) * 1993-10-15 1995-04-19 Applied Materials, Inc. Methods of coating plasma etch chambers and apparatus for plasma etching workpieces
US6071573A (en) 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6322716B1 (en) * 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
JP3720777B2 (ja) 2002-02-20 2005-11-30 株式会社日立ハイテクノロジーズ プラズマ処理装置用保護膜の取付け方法
US7204913B1 (en) * 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US7226869B2 (en) 2004-10-29 2007-06-05 Lam Research Corporation Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
JP2007005381A (ja) 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd プラズマエッチング方法、及びプラズマエッチング装置
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Also Published As

Publication number Publication date
US12347651B2 (en) 2025-07-01
KR20220038273A (ko) 2022-03-28
JP2023182828A (ja) 2023-12-26
JP7374058B2 (ja) 2023-11-06
JP7645963B2 (ja) 2025-03-14
JP2022051034A (ja) 2022-03-31
TW202213506A (zh) 2022-04-01
TWI895499B (zh) 2025-09-01
US20220093367A1 (en) 2022-03-24

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