JP7374058B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

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JP7374058B2
JP7374058B2 JP2020157282A JP2020157282A JP7374058B2 JP 7374058 B2 JP7374058 B2 JP 7374058B2 JP 2020157282 A JP2020157282 A JP 2020157282A JP 2020157282 A JP2020157282 A JP 2020157282A JP 7374058 B2 JP7374058 B2 JP 7374058B2
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film
chamber
substrate
protective film
etching
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Japanese (ja)
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JP2022051034A5 (https=
JP2022051034A (ja
Inventor
康基 田中
龍 永井
貴俊 大類
隆太郎 須田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2020157282A priority Critical patent/JP7374058B2/ja
Priority to CN202111046522.1A priority patent/CN114203507A/zh
Priority to TW110133176A priority patent/TWI895499B/zh
Priority to KR1020210118925A priority patent/KR20220038273A/ko
Priority to US17/469,895 priority patent/US12347651B2/en
Publication of JP2022051034A publication Critical patent/JP2022051034A/ja
Publication of JP2022051034A5 publication Critical patent/JP2022051034A5/ja
Priority to JP2023182663A priority patent/JP7645963B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
JP2020157282A 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置 Active JP7374058B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2020157282A JP7374058B2 (ja) 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置
CN202111046522.1A CN114203507A (zh) 2020-09-18 2021-09-06 蚀刻方法及等离子体处理装置
KR1020210118925A KR20220038273A (ko) 2020-09-18 2021-09-07 에칭 방법 및 플라즈마 처리 장치
TW110133176A TWI895499B (zh) 2020-09-18 2021-09-07 蝕刻方法及電漿處理裝置
US17/469,895 US12347651B2 (en) 2020-09-18 2021-09-09 Etching method and plasma processing apparatus
JP2023182663A JP7645963B2 (ja) 2020-09-18 2023-10-24 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020157282A JP7374058B2 (ja) 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置

Related Child Applications (1)

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JP2023182663A Division JP7645963B2 (ja) 2020-09-18 2023-10-24 プラズマ処理装置

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JP2022051034A JP2022051034A (ja) 2022-03-31
JP2022051034A5 JP2022051034A5 (https=) 2023-02-14
JP7374058B2 true JP7374058B2 (ja) 2023-11-06

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JP2023182663A Active JP7645963B2 (ja) 2020-09-18 2023-10-24 プラズマ処理装置

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US (1) US12347651B2 (https=)
JP (2) JP7374058B2 (https=)
KR (1) KR20220038273A (https=)
CN (1) CN114203507A (https=)
TW (1) TWI895499B (https=)

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US20250205788A1 (en) 2022-03-28 2025-06-26 Kyocera Corporation Cemented carbide and coated tool and cutting tool each using the same
JP2023171269A (ja) * 2022-05-19 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
TW202401563A (zh) * 2022-06-10 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理系統
JP7536941B2 (ja) * 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102733623B1 (ko) * 2022-11-11 2024-11-25 세메스 주식회사 기판 처리 장치의 챔버 내부 표면의 보호막 형성 방법
JP7765651B2 (ja) * 2023-07-12 2025-11-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20250201573A1 (en) * 2023-12-15 2025-06-19 Applied Materials, Inc. Methods for reducing photoresist and carbon etch rates in an icp process chamber using a silicon-based chamber pre-coat
WO2026058737A1 (ja) * 2024-09-11 2026-03-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム

Citations (7)

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JP2003243373A (ja) 2002-02-20 2003-08-29 Hitachi High-Technologies Corp プラズマ処理装置とプラズマ処理装置用保護膜及びその取付け方法
JP2007005381A (ja) 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd プラズマエッチング方法、及びプラズマエッチング装置
JP2008519431A (ja) 2004-10-29 2008-06-05 ラム リサーチ コーポレーション シリコンまたはシリコンカーバイド電極表面をプラズマエッチング処理中の形態改質から保護する方法
JP2011192872A (ja) 2010-03-16 2011-09-29 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2017157627A (ja) 2016-02-29 2017-09-07 東京エレクトロン株式会社 プラズマ処理装置及びプリコート処理方法
JP2018046216A (ja) 2016-09-16 2018-03-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2020136669A (ja) 2019-02-18 2020-08-31 東京エレクトロン株式会社 エッチング方法

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JP2003243373A (ja) 2002-02-20 2003-08-29 Hitachi High-Technologies Corp プラズマ処理装置とプラズマ処理装置用保護膜及びその取付け方法
JP2008519431A (ja) 2004-10-29 2008-06-05 ラム リサーチ コーポレーション シリコンまたはシリコンカーバイド電極表面をプラズマエッチング処理中の形態改質から保護する方法
JP2007005381A (ja) 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd プラズマエッチング方法、及びプラズマエッチング装置
JP2011192872A (ja) 2010-03-16 2011-09-29 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2017157627A (ja) 2016-02-29 2017-09-07 東京エレクトロン株式会社 プラズマ処理装置及びプリコート処理方法
JP2018046216A (ja) 2016-09-16 2018-03-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2020136669A (ja) 2019-02-18 2020-08-31 東京エレクトロン株式会社 エッチング方法

Also Published As

Publication number Publication date
US12347651B2 (en) 2025-07-01
KR20220038273A (ko) 2022-03-28
CN114203507A (zh) 2022-03-18
JP2023182828A (ja) 2023-12-26
JP7645963B2 (ja) 2025-03-14
JP2022051034A (ja) 2022-03-31
TW202213506A (zh) 2022-04-01
TWI895499B (zh) 2025-09-01
US20220093367A1 (en) 2022-03-24

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