CN114093816A - 一种利用缓坡状背面进行igbt晶圆加工的方法 - Google Patents
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Abstract
本发明公开一种利用缓坡状背面进行IGBT晶圆加工的方法,包括以下步骤:S1、完成晶圆正面金属制程前的工艺;S2、蚀刻晶圆背面形成缓坡;S3、完成晶圆背面制程;S4、背面涂布聚酰亚胺;S5、制作正面金属制程;S6、正面涂布聚酰亚胺,通过显影、固化、蚀刻后裸露出切割道;S7、通过蚀刻、激光完成切割,除去正面的聚酰亚胺;S8、贴附在切割模框上,除去背面聚酰亚胺,使晶粒分离。本发明在晶圆背面做缓坡状处理可以在边缘提供应力支撑,克服了背面回火温度的限制,同时本发明晶圆背面涂布聚酰亚胺,可以缓冲金属厚膜应力,确保薄晶圆在厚金属镀膜后不至翘曲破损。
Description
技术领域
本发明涉及半导体加工领域,具体的是一种利用缓坡状背面进行IGBT晶圆加工的方法。
背景技术
IGBT是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件,兼有MOSFET(金属-氧化物半导体场效应晶体管)的高输入阻抗和GTR(电力晶体管)的低导通压降两方面的优点。GTR饱和压降低,载流密度大,但驱动电流较大;MOSFET驱动功率很小,开关速度快,但导通压降大,载流密度小。IGBT综合了以上两种器件的优点,驱动功率小而饱和压降低。非常适合应用于直流电压为600V及以上的变流系统如交流电机、变频器、开关电源、照明电路、牵引传动等领域。
现行的IGBT晶圆生产工艺都是先完成晶圆的正面制程,然后把正面键合玻璃载板,再对背面减薄并完成后续的晶圆背面制程,但是由于背面制程中存在高温步骤,而黏着剂为高分子材料最高只能承受350℃加热装程,且正面已完成金属装程,AI或Cu皆最多能承受560℃的加热装程,因此无法在玻璃载板键合的晶圆上实施,但解键合后的晶圆很容易产生破片及损伤。
发明内容
为解决上述背景技术中提到的不足,本发明的目的在于提供一种利用缓坡状背面进行IGBT晶圆加工的方法,本发明在晶圆背面做缓坡状处理,在晶圆减薄后边缘提供应力支撑,不至于造成破片或边缘局布裂痕,且克服了背面回火温度的限制,同时本发明晶圆背面涂布聚酰亚胺,可以缓冲正面金属厚膜及电镀、化镀过程中产生的应力,切割后再除去背面聚酰亚胺可以确保薄晶圆在厚金属镀膜后不至翘曲破损。
本发明的目的可以通过以下技术方案实现:
一种利用缓坡状背面进行IGBT晶圆加工的方法,包括以下步骤:
S1、完成晶圆正面金属制程前的工艺;
S2、将晶圆正面粘附研磨胶带,然后蚀刻晶圆背面使边缘形成缓坡状晶圆结构;
S3、移除研磨胶带,完成晶圆背面制程;
S4、在晶圆背面缓坡处涂布聚酰亚胺使背面整平;
S5、翻转至晶圆正面,制作正面金属制程;
S6、在晶圆正面涂布聚酰亚胺,通过光刻、显影后裸露出切割道;
S7、将晶圆背面贴附在第一切割模框上,通过电浆蚀刻切割道至背面金属层,再通过激光切断背面金属,然后除去正面的聚酰亚胺;
S8、将切割好之后的晶圆正面贴附在第二切割模框上,然后将第一切割模框、晶圆和第二切割模框整体翻转,通过紫外光照射移除第一切割膜框黏性,取下第一切割模框,后通过氧气电浆蚀刻除去背面缓坡处的聚酰亚胺;
S9、通过紫外光照射晶圆边缘缓坡状区域,移除第二切割模框对应缓坡状区域的黏性,除去四周环形缓坡状边缘,然后将晶圆背面贴附在第三切割模框上,整体翻转第二切割模框、晶圆和第三切割模框,在通过通过紫外光照射移除第二切割膜框黏性,取下第二切割模框即可。
进一步优选地,正面金属制程前的工艺包括沟槽、ILD和接触孔工艺。
进一步优选地,步骤S2中利用研磨及边缘气环或保护液蚀刻方式于晶圆背面边缘形成缓坡或阶梯状晶圆结构,减薄后晶圆厚度为40-150um。
进一步优选地,背面金属制程包括光刻、离子植入、回火及背面金属制程。
本发明的有益效果:
本发明在晶圆背面做缓坡状处理,虽是超薄片晶圆,但边缘仍可接触加热及金属相关工艺设备的机械传送手臂接触点或边,不至于造成破片或边缘局布裂痕,同时克服了背面回火温度的限制;本发明晶圆背面涂布聚酰亚胺,可以缓冲正面金属厚膜及电镀、化镀过程中产生的应力,切割后再除去背面聚酰亚胺可以确保薄晶圆在厚金属镀膜后不至翘曲破损;本发明通过正面涂布聚酰亚胺后显影、固化、蚀刻后裸露出切割道,可以于正面自动对准,先蚀刻切割道后再激光切断背面金属,克服了传统晶圆背面切割不易对准的问题。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明工艺步骤S1的成型示意图;
图2是本发明工艺步骤S2的成型示意图;
图3是本发明工艺步骤S3的成型示意图;
图4是本发明工艺步骤S4的成型示意图;
图5是本发明工艺步骤S5的成型示意图;
图6是本发明工艺步骤S6的成型示意图;
图7是本发明工艺步骤S7的成型示意图;
图8是本发明工艺步骤S8的成型示意图;
图9是本发明工艺步骤S9的成型示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
如图1-8所示,一种利用缓坡状背面进行IGBT晶圆加工的方法,包括以下步骤:
S1、完成晶圆正面金属制程前的工艺,包括沟槽、ILD和接触孔工艺;
S2、将晶圆正面粘附研磨胶带,然后利用研磨及边缘气环或保护液蚀刻方式于晶圆背面边缘形成缓坡状晶圆结构,减薄后晶圆厚度为40-150um;
S3、移除研磨胶带,完成晶圆背面光刻、离子植入、回火及背面金属制程;
S4、在晶圆背面缓坡处涂布聚酰亚胺使背面整平;
S5、翻转至晶圆正面,制作正面金属制程;
S6、在晶圆正面涂布聚酰亚胺,通过显影、固化、蚀刻后裸露出切割道;
S7、将晶圆背面贴附在第一切割模框上,通过电浆蚀刻切割道至背面金属层,再通过激光切断背面金属,然后除去正面的聚酰亚胺;
S8、S8、将切割好之后的晶圆正面贴附在第二切割模框上,然后将第一切割模框、晶圆和第二切割模框整体翻转,通过紫外光照射移除第一切割膜框黏性,取下第一切割模框,后通过氧气电浆蚀刻除去背面缓坡处的聚酰亚胺;
S9、通过紫外光照射晶圆边缘缓坡状区域,移除第二切割模框对应缓坡状区域的黏性,除去四周环形缓坡状边缘,然后将晶圆背面贴附在第三切割模框上,整体翻转第二切割模框、晶圆和第三切割模框,在通过通过紫外光照射移除第二切割膜框黏性,取下第二切割模框即可。
在本说明书的描述中,参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。
Claims (4)
1.一种利用缓坡状背面进行IGBT晶圆加工的方法,其特征在于,包括以下步骤:
S1、完成晶圆正面金属制程前的工艺;
S2、将晶圆正面粘附研磨胶带,然后蚀刻晶圆背面使边缘形成缓坡状晶圆结构;
S3、移除研磨胶带,完成晶圆背面制程;
S4、在晶圆背面缓坡处涂布聚酰亚胺使背面整平;
S5、翻转至晶圆正面,制作正面金属制程;
S6、在晶圆正面涂布聚酰亚胺,通过光刻、显影后裸露出切割道;
S7、将晶圆背面贴附在第一切割模框上,通过电浆蚀刻切割道至背面金属层,再通过激光切断背面金属,然后除去正面的聚酰亚胺;
S8、将切割好之后的晶圆正面贴附在第二切割模框上,然后将第一切割模框、晶圆和第二切割模框整体翻转,通过紫外光照射移除第一切割膜框黏性,取下第一切割模框,后通过氧气电浆蚀刻除去背面缓坡处的聚酰亚胺;
S9、通过紫外光照射晶圆边缘缓坡状区域,移除第二切割模框对应缓坡状区域的黏性,除去四周环形缓坡状边缘,然后将晶圆背面贴附在第三切割模框上,整体翻转第二切割模框、晶圆和第三切割模框,在通过通过紫外光照射移除第二切割膜框黏性,取下第二切割模框即可。
2.根据权利要求1所述的利用缓坡状背面进行I GBT晶圆加工的方法,其特征在于,所述正面金属制程前的工艺包括沟槽、I LD和接触孔工艺。
3.根据权利要求1所述的利用缓坡状背面进行I GBT晶圆加工的方法,其特征在于,所述步骤S2中利用研磨及边缘气环或保护液蚀刻方式于晶圆背面边缘形成缓坡状晶圆结构,减薄后晶圆厚度为40-150um。
4.根据权利要求1所述的利用缓坡状背面进行IGBT晶圆加工的方法,其特征在于,所述背面金属制程包括光刻、离子植入、回火及背面金属制程。
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