CN114093786B - 一种fdsoi器件的接触孔连接位置检测方法 - Google Patents
一种fdsoi器件的接触孔连接位置检测方法 Download PDFInfo
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- CN114093786B CN114093786B CN202210077135.2A CN202210077135A CN114093786B CN 114093786 B CN114093786 B CN 114093786B CN 202210077135 A CN202210077135 A CN 202210077135A CN 114093786 B CN114093786 B CN 114093786B
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- 238000001514 detection method Methods 0.000 title claims abstract description 26
- 238000010894 electron beam technology Methods 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000003384 imaging method Methods 0.000 claims abstract description 21
- 230000007547 defect Effects 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000010586 diagram Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 241001270131 Agaricus moelleri Species 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2653—Contactless testing using electron beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
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CN202210077135.2A CN114093786B (zh) | 2022-01-24 | 2022-01-24 | 一种fdsoi器件的接触孔连接位置检测方法 |
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CN202210077135.2A CN114093786B (zh) | 2022-01-24 | 2022-01-24 | 一种fdsoi器件的接触孔连接位置检测方法 |
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CN114093786A CN114093786A (zh) | 2022-02-25 |
CN114093786B true CN114093786B (zh) | 2022-04-15 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010053966A (ko) * | 1999-12-02 | 2001-07-02 | 윤종용 | 실리콘 기판의 노출 확인 방법 |
CN104505368A (zh) * | 2014-12-24 | 2015-04-08 | 昆山国显光电有限公司 | 一种接触孔刻蚀工艺、有机发光显示器件及显示装置 |
CN105810606A (zh) * | 2016-04-19 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | 存储器电路接触孔层次失效点定位方法 |
CN111524826A (zh) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | 接触孔关键尺寸的检测方法、存储介质和设备 |
CN113611626A (zh) * | 2021-08-04 | 2021-11-05 | 上海信及光子集成技术有限公司 | 一种在线检测硅槽刻蚀深度的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2985826B2 (ja) * | 1997-04-09 | 1999-12-06 | 日本電気株式会社 | 位置検出装置および方法 |
JP2002231780A (ja) * | 2001-01-30 | 2002-08-16 | Jeol Ltd | 荷電粒子ビームを用いたホールの検査方法 |
KR101242614B1 (ko) * | 2010-12-17 | 2013-03-19 | 에스케이하이닉스 주식회사 | 반도체 집적회로 |
CN103681604B (zh) * | 2012-09-07 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | 带有自对准接触孔的半导体器件及其制备方法 |
US20150270181A1 (en) * | 2013-09-27 | 2015-09-24 | Pdf Solutions, Inc. | Opportunistic placement of ic test strucutres and/or e-beam target pads in areas otherwise used for filler cells, tap cells, decap cells, scribe lines, and/or dummy fill, as well as product ic chips containing same |
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- 2022-01-24 CN CN202210077135.2A patent/CN114093786B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010053966A (ko) * | 1999-12-02 | 2001-07-02 | 윤종용 | 실리콘 기판의 노출 확인 방법 |
CN104505368A (zh) * | 2014-12-24 | 2015-04-08 | 昆山国显光电有限公司 | 一种接触孔刻蚀工艺、有机发光显示器件及显示装置 |
CN105810606A (zh) * | 2016-04-19 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | 存储器电路接触孔层次失效点定位方法 |
CN111524826A (zh) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | 接触孔关键尺寸的检测方法、存储介质和设备 |
CN113611626A (zh) * | 2021-08-04 | 2021-11-05 | 上海信及光子集成技术有限公司 | 一种在线检测硅槽刻蚀深度的方法 |
Non-Patent Citations (1)
Title |
---|
"40 nm 节点高深宽比接触孔刻蚀电性能稳定性改善";贺金鹏 等;《半导体制造技术》;20190331;第44卷(第3期);第194-199页 * |
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Effective date of registration: 20220914 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Patentee after: Guangdong Dawan District integrated circuit and System Application Research Institute Address before: Room 1601-1607, 85 Xiangxue Avenue, Huangpu District, Guangzhou, Guangdong 510000 Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Patentee before: Guangdong Dawan District integrated circuit and System Application Research Institute |
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Effective date of registration: 20240808 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Country or region after: China Address before: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee before: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Country or region before: China Patentee before: Guangdong Dawan District integrated circuit and System Application Research Institute |
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