CN114026657A - 导电性层叠体及使用其的光学装置、导电性层叠体的制造方法 - Google Patents
导电性层叠体及使用其的光学装置、导电性层叠体的制造方法 Download PDFInfo
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- CN114026657A CN114026657A CN202080046824.6A CN202080046824A CN114026657A CN 114026657 A CN114026657 A CN 114026657A CN 202080046824 A CN202080046824 A CN 202080046824A CN 114026657 A CN114026657 A CN 114026657A
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- Prior art keywords
- transparent material
- material layer
- silver
- conductive laminate
- film
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Abstract
本发明提供可兼顾高透过率和低电阻的导电性层叠体以及具备该导电性层叠体的各种光学装置。导电性层叠体(1)是具备透明基板(2)并且在透明基板(2)的至少一个面上从透明基板(2)侧起依次层叠有第一透明材料层(3)、以银为主要成分的金属层(4)、第二透明材料层(5)的导电性层叠体(1),第一透明材料层(3)由不含锌的金属氧化物构成,第二透明材料层(5)由包含锌的金属氧化物构成,金属层(4)的厚度为7nm以上。
Description
技术领域
本发明涉及用于例如触摸面板、调光元件、电泳型光学元件、发光元件等的导电性层叠体。本申请以在日本于2019年7月3日申请的日本专利申请号特愿2019-124245为基础而主张优先权,该申请通过参照而引用于本申请。
背景技术
一直以来,透明且具有导电性的材料被用于各种光学装置。作为示例,可以举出层叠在图像元件器件上并且通过静电电容的变化等来检测被按压的位置的触摸面板、利用电致变色现象以电的方式可变地调节外部光的强光的调光元件、利用了电致发光现象的发光元件、利用电场对分散在液体中的具有电荷的微粒进行操作的电泳型光学元件等。
这些光学装置中使用的电极要求光学透明,并且,从动作上的课题出发,需要提高电导率。
因此,要求透明且电阻小的材料。作为这种材料,通常广泛使用作为铟与锡的复合氧化物的ITO,在市场上已经占据较大的位置。
但是,为了降低电阻值、提高透明性,ITO需要在高温下成膜或成膜后施加热处理,在用于不耐热的基板和元件的情况下存在问题。
因此,正在推进非加热且电阻值低、透明性高的材料的开发,研究了使用Zn-O、In-Zn-O(IZO)、Al-Zn-O(AZO)、Sn-Zn-O(ZTO)等锌系氧化物作为ITO的替代材料。
锌系氧化物中,AZO、ZTO不包含担心对人体有影响的铟,因此更优选。
另一方面,在等离子电视等中,在装置的结构上,会从画面释放电磁波。为了吸收该电磁波,开发了各种透明材料,已知用高折射率的透明材料夹持非常薄的银薄膜的层叠体非常有效,并进行了广泛的研究、开发。
该层叠体利用银来赋予导电性,利用高折射率的材料与银之间的光干涉效应来抑制表面反射而提高透过率,由此实现了高透过、低电阻。
而且,还见过将该层叠体应用于上述光学装置等的例子。
现有技术文献
专利文献
专利文献1:日本专利第4820738号公报
非专利文献
非专利文献1:Appl.Phys.A(2014)116:1287-1291
发明内容
发明所要解决的课题
这样,兼具透过性和导电性的透明导电膜可考虑各种应用例,但为了实现上述元件的省电、高速动作,要求进一步的低电阻、高透过率。然而,在ITO等金属氧化物中,为了降低电阻值,需要增加膜的厚度,如果增加膜的厚度,则透过率会降低,难以得到充分的特性。
另外,通过材料的组合、膜厚度的设计,高透过且低电阻的层叠体在光学模拟上是能够实现的,在模拟上光会被银膜吸收,因此优选使银的厚度变薄。
但是,如果实际进行成膜,则即使改变银的厚度,光的吸收量也不变化,与厚度无关之处的光吸收成为主要原因,对整体的透过率造成了较大的影响。
因此,难以得到具有超过90%的透过率和20Ω/□以下的表面电阻的透明导电膜。
因此,本技术是鉴于这样的问题而完成的,其目的在于,提供可兼顾高透过率和低电阻的导电性层叠体以及具备该导电性层叠体的各种光学装置、导电性层叠体的制造方法。
用于解决课题的方法
本发明人为了解决上述课题而反复进行了深入研究,结果发现,在从基板侧起依次层叠第一透明材料层、以银为主要成分的金属层、第二透明材料层的导电性层叠体中,第一透明材料层由不含锌的金属氧化物构成、第二透明材料层由包含锌的金属氧化物构成时能够抑制层叠体的光吸收,实现高透过率、低电阻,从而完成了本发明。
即,本技术的导电性层叠体是具备透明基板并且在上述透明基板的至少一个面上从上述透明基板侧起依次层叠有第一透明材料层、以银为主要成分的金属层、第二透明材料层的导电性层叠体,上述第一透明材料层由不含锌的金属氧化物构成,上述第二透明材料层由包含锌的金属氧化物构成,上述金属层的厚度为7nm以上。
另外,本技术的光学装置的特征在于,使用了至少1片上述导电性层叠体。
另外,本技术的导电性层叠体的制造方法包括在透明基板的至少一个面上从上述透明基板侧起依次层叠第一透明材料层、以银为主要成分的金属层、第二透明材料层的工序,上述第一透明材料层由不含锌的金属氧化物构成,上述第二透明材料层由包含锌的金属氧化物构成,上述金属层的厚度为7nm以上。
发明效果
根据本技术,通过在基板上形成不含锌元素的第一透明材料后,将银或银合金成膜,进而形成包含锌元素的第二透明材料,从而提供一种抑制界面处的光吸收层的生成,低电阻且具有高透过率的导电性层叠体。
其结果是,根据本技术,能够提供低电阻且具有高透过率的导电性层叠体,由此能够作为省电且具有高透过率的高性能的触摸面板、调光元件、电泳元件、发光元件等各种光学装置的电极来应用。
附图说明
[图1]图1是示意性地示出应用了技术的导电性层叠体的构成的截面图。
[图2]图2是示出薄膜形成装置的内部结构的立体图。
具体实施方式
在下文中,参照附图详细说明应用本技术的导电性层叠体以及使用该导电性层叠体的光学装置、导电性层叠体的制造方法。应当注意,本技术不限于以下实施方式,在不脱离本技术的主旨的范围内当然可以进行各种变更。另外,附图是示意性的,各尺寸的比率等有时与现实不同。具体的尺寸等应参考以下的说明进行判断。另外,在附图相互之间当然也包含相互的尺寸关系、比率不同的部分。
[导电性层叠体]
图1是示意性地示出应用了技术的导电性层叠体1的构成的截面图。如图1所示,导电性层叠体1是具备透明基板2并且在透明基板2的至少一个面上从透明基板2侧起依次层叠有第一透明材料层3、以银为主要成分的金属层4、第二透明材料层5的导电性层叠体1,第一透明材料层3由不含锌的金属氧化物构成,第二透明材料层5由包含锌的金属氧化物构成。
在对导电性层叠体1的上述各层3~5进行成膜时,可以使用作为真空成膜技术之一的溅射。本发明人通过溅射使各种透明材料与银层叠并进行了研究,结果发现产生光吸收的吸收层(以下,称为“光吸收层”)形成于透明材料与银的界面处。进而发现,透明材料与银的界面存在第一透明材料层3与构成金属层4的银之间、和构成金属层4的银与第二透明材料层5之间这2处,在各界面存在光吸收层,各光吸收层的形成机理不同。
第一透明材料层3与构成金属层4的银之间的第一光吸收层是在透明基板2上将第一透明材料层3成膜后,通过溅射等将银成膜时产生的。即,从靶高速飞出的银原子到达透明基板2时会失去动能而固定于表面。此时,在与构成第一透明材料层3的金属之间相互作用强的情况下,会在第一透明材料层3侧发生合金化,产生光吸收层(第一光吸收层)。锌与银之间具有宽的固溶区域,是与银的相互作用强的元素,因此容易形成光吸收层。一般而言,在相互作用强的情况下,能够抑制银在表面的岛状化,抑制由岛状化的银引起的吸收,但在形成了层的情况下,也会在此处形成一定量的光吸收层。
因此可知,在将与银的相互作用小的材料、例如Nb、Ti、Zr、Hf、Ta、W、Mo等的金属氧化物用作构成第一透明材料层3的第一透明材料的情况下,在非常薄的银膜的情况下会成为岛状结构而产生大的光吸收,但在层叠某一膜厚以上的银的情况下,不形成基于与第一透明材料的合金层的第一光吸收层,而形成仅由银进行的小的光吸收。另外,可知其最小的膜厚为7nm以上。
构成金属层4的银与第二透明材料层5之间的第二光吸收层可在通过溅射等将第二透明材料层5在金属层4上成膜时产生。即,形成第二透明材料层5的金属元素及氧原子到达表面被银覆盖的状态的透明基板2的表面,但在银与金属元素的相互作用弱的情况下,第二透明材料层5未充分润湿扩展,在界面形成多个小的空隙,并在此处发生光吸收。另一方面,若使用包含锌的金属的氧化物作为第二透明材料,则在被银覆盖的透明基板2的表面的润湿性提高,形成良好的界面。而且,由于锌与氧的结合强,因此锌在与银形成合金之前形成氧化被膜,因此也不会发生由合金层形成光吸收层(第二光吸收层)。
另外,目前,作为构成第二透明材料层5的可实用的导电性氧化物,为锌氧化物和锌合金复合氧化物,但在使电荷从外部实质性移动到导电性层叠体1的表面时,氧化锌和锌合金复合氧化物也具有良好的接触电阻,可以说是优选的。
这样,作为构成第一透明材料层3的第一透明材料,使用不含锌的透明材料,工业上使用Nb、Ti、Zr、Hf、Ta、W、Mo等的氧化物及其复合氧化物,通过溅射等在透明基板2上成膜第一透明材料后,通过溅射等成膜7nm以上的银作为金属层4,通过溅射等依次层叠包含锌的氧化物作为构成第二透明材料层5的第二透明材料,从而抑制了各层3~5的界面处的光吸收,实现了具有高透过率的导电性层叠体1。
构成第一透明材料层3的第一透明材料优选不含锌,但为了通过光学干涉来抑制表面的反射,优选折射率为1.8以上的高折射率物质。例如,可以例示Nb、Ti、Zr、Hf、Ta、W、Mo的氧化物及其复合氧化物。另外,也可以在相对于这些元素不超过50原子%的范围内添加1种或多种其他元素。
金属层4是以银为主要成分的金属层,可以为纯银或在整体中不超过10原子%的范围内加入添加元素。即,在本技术中,所谓以银为主要成分,是指包含90原子%以上的银或纯银。另外,在比7nm薄的膜厚时银容易形成岛状的膜,因此优选具有7nm以上的厚度。关于银的厚度的上限,没有特别限制,优选小于15nm。在15nm以上的膜厚的情况下,银的层内部的光吸收大于界面处的吸收,本技术的效果变小。
构成第二透明材料层5的第二透明材料优选包含锌,从光学特性和导电性、化学稳定性的观点出发,可以在不超过50原子%的范围内添加1种或多种。
如上所述,根据本技术,在透明基板2上形成不含锌元素的第一透明材料之后,将银或银合金成膜,进而形成含锌元素的第二透明材料,由此抑制在各界面处生成光吸收层,获得低电阻且具有高透过率的导电性层叠体1。这样的本技术的导电性层叠体1为低电阻且具有高透过率。因此,根据本技术,能够提供使用了至少1片导电性层叠体的省电、高性能的光学装置,例如使用导电性层叠体作为电极的至少1个极的触摸面板、调光元件、电泳型光学元件、发光元件、天线等。
以下,对构成导电性层叠体1的各层进行详细说明。如上所述,应用了本技术的导电性层叠体1具备透明基板2并且在透明基板2的至少一个面上从透明基板2侧起依次层叠有第一透明材料层3、以银为主要成分的金属层4、第二透明材料层5。
<透明基板>
作为本发明的透明基板2,可以使用由玻璃基材、树脂膜中的任一种构成的透明基板。在使用由树脂膜构成的基板作为透明基板2的情况下,可以通过辊对辊法来制造,因此能够提高生产效率。
作为这样的树脂膜的材料,没有特别限定,例如可以使用聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚芳酰胺、聚酰亚胺、聚碳酸酯、聚乙烯、聚丙烯、三乙酰纤维素(TAC)、聚环烯烃(COC、COP)等。
透明基板2的厚度没有特别限定,在树脂膜的情况下,考虑到制造时的操作容易度和构件的薄型化,优选设为20μm以上且200μm以下。
另外,在应用了本技术的导电性层叠体1中,透明基板2的优选的透光率为88%以上。
需要说明的是,从提高透明基板2的耐摩擦性的观点出发,也可以通过例如溶液涂布在透明基板2的两面形成例如由丙烯酸系树脂形成的薄膜。
<第一透明材料层>
第一透明材料层3由不含锌的金属氧化物构成,例如可以适当地使用Nb、Ti、Zr、Hf、Ta、W、Mo等与银的相互作用小的物质的氧化物。另外,它们可以是单独或含有多种元素的复合氧化物,也可以以50原子%以下的浓度含有锌以外的元素。第一透明材料层3的厚度没有特别限定,可以根据材料构成设定为透过率最高的膜厚。作为第一透明材料层3的具体厚度,例如可以设为30~80nm的范围。
对于第一透明材料层3的形成方法没有特别限定,从提高生产效率的观点、以及使膜厚分布均匀化的观点出发,优选使用溅射法。
另外,从防湿性等观点出发,也可以将第一透明材料层3分成多个层来形成。在该情况下,至少与金属层4相接的透明材料层优选由不含锌的金属氧化物、例如Nb、Ti、Zr、Hf、Ta、W、Mo等与银的相互作用小的物质的氧化物构成。
<金属层>
层叠在第一透明材料层3上的金属层4是以银为主要成分的金属层。金属层4也可以在整体中不超过10原子%的范围内加入添加元素。即,本技术的金属层4由90原子%以上的银或纯银构成。
另外,金属层4优选具有7nm以上的厚度。若膜厚比7nm薄,则容易形成岛状的膜,有可能阻碍透光性。关于膜厚的上限没有特别限制,在15nm以上的膜厚的情况下,与界面处的吸收相比,银层内部的光吸收变大,本发明的效果有可能变小。
对于金属层4的形成方法没有特别限定,从优选在形成金属层4后连续地形成第二透明材料层5的观点、提高生产效率的观点、以及使膜厚分布均匀化的观点出发,优选使用溅射法。
<第二透明材料层>
层叠于金属层4上的第二透明材料层5由包含锌的氧化物构成。从光学特性和导电性、化学稳定性的观点出发,第二透明材料层5可以在不超过50原子%的范围内添加锌以外的1种或多种元素。第二透明材料层5的厚度没有特别限定,可以根据材料构成而设定为透过率最高的膜厚。作为第二透明材料层5的具体厚度,例如可以设为30~70nm的范围。
对于第二透明材料层5的形成方法没有特别限定,从优选在形成金属层4后连续地形成的观点、提高生产效率的观点、以及使膜厚分布均匀化的观点出发,优选使用溅射法。
另外,从耐擦伤性等观点出发,也可以将第二透明材料层5分成多个层来形成。此时,至少与金属层4相接的透明材料层为含有锌的氧化物,从光学特性和导电性、化学稳定性的观点出发,可以在不超过50原子%的范围内添加1种或多种元素。另外,为了在其他层中也保持良好的导电性,优选为具有导电性的透明氧化物。
需要说明的是,图1所示的导电性层叠体1在透明基板2的一个面层叠了第一透明材料层3、金属层4和第二透明材料层5,但本技术的导电性层叠体1当然也可以在透明基板2的另一个面或透明基板2的两面上层叠第一透明材料层3、金属层4和第二透明材料层5。
[导电性层叠体的制造工序]
这样的导电性层叠体1可以通过在透明基板2的至少一个面上从透明基板2侧起依次层叠第一透明材料层3、以银为主要成分的金属层4、第二透明材料层5的工序来制造。
第一透明材料层3、金属层4、第二透明材料层5的成膜例如可以使用日本特开2014-34701号公报中记载的薄膜形成装置来形成。图2是示出日本特开2014-34701号公报所记载的薄膜形成装置的内部结构的立体图。该薄膜形成装置是通过辊对辊法在膜基材上进行基于溅射的成膜的装置,能够设置多个溅射靶,而且,一旦设置好辊,就能够在维持真空气氛的状态下对不同的多种材料进行成膜。
进而,在该薄膜形成装置中,在溅射时除了作为溅射气体的氩气以外,还可以将氧气导入等离子体中,由此能够在膜基材上形成靶材料的氧化物。
以下,对薄膜形成装置的构成进行详细说明。该薄膜形成装置具备:测定部,其在长度方向上连续地供给基材膜,对形成于基材膜上的薄膜的宽度方向的光学特性进行测定;供给部,其在基材膜的宽度方向上设置有多个气体喷嘴,向靶附近供给反应性气体;以及控制部,其基于测定部的宽度方向的光学特性,对从各气体喷嘴喷出的反应性气体的流量进行控制,该薄膜形成装置能够形成在长度方向及宽度方向上厚度均匀的薄膜。
另外,作为具体的构成,优选具备成膜部,该成膜部具有供给部、对靶施加电压的溅射电极、以及对成膜中的基材膜的宽度方向的等离子体的发光光谱进行测定的等离子体测定部。由此,控制部能够基于测定部的宽度方向的光学特性和等离子体测定部的发光光谱,控制从各气体喷嘴喷出的反应性气体的流量和施加于靶的电压,能够形成在宽度方向上厚度更均匀的薄膜。
另外,作为具体的构成,优选具备:将基材膜在长度方向上卷出的卷出部;在基材膜的长度方向上配置有多个成膜部的成膜单元;以及将在成膜单元中形成了薄膜的基材膜卷绕的卷绕部。由此,从基材膜的卷出至卷绕为止,能够形成多层的薄膜。另外,测定部优选分别设置在成膜部之后,但优选至少设置在最后的成膜部之后、即成膜单元与卷绕部之间。由此,能够测定单层的薄膜或多层的薄膜这两者的光学特性。
图2所示的薄膜形成装置使作为基材膜的基膜一边缠绕于管状辊一边行进,通过溅射在基膜表面形成薄膜。
该薄膜形成装置从作为卷出部的卷出辊11供给基膜10(透明基板2),利用作为卷绕部的卷绕辊12将形成了薄膜的基膜10卷绕。另外,在真空腔室内具备作为成膜单元的第一成膜室单元及第二成膜室单元。真空腔室与进行空气排出的真空泵连接,能够调整为预定的真空度。
第一成膜室单元及第二成膜室单元分别具备第一管状辊21及第二管状辊22,以与管状辊21、22的外周面相向的方式固定多个作为成膜部的溅射室SP1~10。在各溅射室SP1~10中,在电极上安装预定的靶,并且设置在基膜10的宽度方向上具有多个气体喷嘴的供给部。
另外,薄膜形成装置具备在第一成膜室单元与第二成膜室单元之间、即作为利用溅射室SP5进行成膜后测定光学特性的测定部的光学监视器31。由此,能够控制第一成膜室单元后的中间品的成膜,并且能够削减基于单层的调整时的调整时间。另外,具备作为在第二成膜室单元之后、即利用溅射室SP10进行成膜之后测定光学特性的测定部的光学监视器32。由此,能够确认第二成膜室单元后的最终品的成膜品质。
如后述那样,光学监视器31、32通过能够在宽度方向上扫描的光学头,测定形成在基膜10上的薄膜的宽度方向的光学特性。通过该光学监视器31、32,例如测定反射率的峰值波长作为光学特性,并换算为光学厚度,由此能够得到宽度方向的光学厚度分布。
包含这样的构成的薄膜形成装置从卷出辊11抽出基膜10,在第一管状辊21和第二管状辊22的输送时在基膜10上形成薄膜,利用卷绕辊12进行卷绕,由此能够得到多层的薄膜。在此,通过光学监视器31、32测定在基膜10上形成的薄膜的宽度方向的光学特性,基于光学特性,控制来自在宽度方向上设置的各气体喷嘴的反应性气体的流量,由此能够形成在长度方向和宽度方向上厚度均匀的薄膜。
实施例
以下,列举实施例及比较例具体说明本技术,但本发明并不限定于以下的实施例。
<实施例1>
使用图2所示的日本特开2014-34701号公报记载的薄膜形成装置,在透明基板上依次形成第一透明材料层、金属层、第二透明材料层。作为透明基板,使用厚度50μm的COP膜。
薄膜形成装置可以同时依次层叠多种材料的薄膜,在本实施例中,从靠近膜卷出侧的一侧开始依次配置氧化铌、银、锌-锡的复合氧化物的靶。各个靶与独立的电源连接,能够投入任意的电力进行放电。另外,各个靶分别收纳于独立的容器内,隔开靶的隔壁仅在管状辊附近具有微小的间隙,能够实现实质上不同的气体气氛。
将该薄膜形成装置的真空槽内整体进行真空排气至1×10-3Pa以下后,在设置有氧化铌的第一阴极部,将氩气一边利用质量流量控制器以成为150sccm的流量的方式进行调整一边导入至真空槽的第一阴极部,对氧化铌靶施加电力而使其放电,进行基于溅射的成膜。此时,为了抑制由氧不足引起的氧化铌的光吸收,添加6sccm的氧,形成透明的氧化物层。此时的膜的行进速度为3m/min。电力是在预先测定电力与膜厚的关系后,调整成能够以3m/min的行进速度形成46nm厚度的氧化铌。
在第一阴极部形成氧化铌后,在第二阴极部形成银薄膜。具体而言,在第二阴极部,将氩气一边以成为450sccm的流量的方式用质量流量控制器调整一边导入至真空槽的第二阴极部,对银靶施加电力使其放电,进行基于溅射的成膜。在本实施例中使用了相邻的2个阴极,但不一定需要使用相邻的2个阴极。根据装置结构,也可以不使用1个阴极室,而将阴极室整体作为隔壁。电力是在预先测定电力与膜厚的关系后,调整成能够以3m/min的行进速度形成9nm厚度的银薄膜。
在第二阴极部形成银薄膜后,在第三阴极部形成锌-锡复合氧化物。具体而言,在第三阴极部,将氩气一边利用质量流量控制器以成为150sccm的流量的方式进行调整,一边导入至真空槽的第三阴极部,对锌-锡复合氧化物靶施加电力使其放电,进行基于溅射的成膜。此时,与氩气分开地,将微量的氧一边用质量流量控制器调整一边导入,以不引起氧不足、氧过多所导致的导电性不良的方式调整氧量,得到良好的透明导电性氧化物。在本实施例中使用了相邻的2个阴极,但不一定需要使用相邻的2个阴极。根据装置结构,也可以不使用1个阴极室,而将阴极室整体作为隔壁。电力是在预先测定电力与膜厚的关系后,调整成能够以3m/min的行进速度形成50nm厚度的锌-锡复合氧化物。
膜厚全部事先通过计算机模拟进行计算,以透过率最高的方式进行设计。
将3层成膜后,连续地卷绕膜,卷绕成为图1构成的膜后,向装置整体导入大气,取出试样,作为样品。
<实施例2>
将氧化铌的膜厚调整为49nm、将银的膜厚调整为8nm、将锌-锡复合氧化物的膜厚调整为52nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例3>
将氧化铌的膜厚调整为52nm、将银的膜厚调整为7nm、将锌-锡复合氧化物的膜厚调整为53nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例4>
将氧化铌的膜厚调整为43nm、将银的膜厚调整为10nm、将锌-锡复合氧化物的膜厚调整为49nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例5>
将氧化铌的膜厚调整为40nm、将银的膜厚调整为11nm、将锌-锡复合氧化物的膜厚调整为47nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例6>
将氧化铌的膜厚调整为38nm、将银的膜厚调整为12nm、将锌-锡复合氧化物的膜厚调整为46nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例7>
使用氧化钛作为第一透明材料并将膜厚调整为39nm,将银的膜厚调整为10nm,将锌-锡复合氧化物的膜厚调整为52nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例8>
使用氧化锆作为第一透明材料并将膜厚调整为71nm,将银的膜厚调整为7nm,将锌-锡复合氧化物的膜厚调整为42nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例9>
使用氧化铪作为第一透明材料并将膜厚调整为62nm,将银的膜厚调整为7nm,将锌-锡复合氧化物的膜厚调整为47nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例10>
使用五氧化钽作为第一透明材料并将膜厚调整为58nm,将银的膜厚调整为7nm,将锌-锡复合氧化物的膜厚调整为50nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例11>
使用氧化钨作为第一透明材料并将膜厚调整为63nm,将银的膜厚调整为7nm,将锌-锡复合氧化物的膜厚调整为47nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例12>
使用氧化钼作为第一透明材料并将膜厚调整为65nm,将银的膜厚调整为7nm,将锌-锡复合氧化物的膜厚调整为48nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例13>
将氧化铌的膜厚调整为51nm、将银的膜厚调整为7nm、使用氧化锌作为第二透明材料并将膜厚调整为53nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例14>
将氧化铌的膜厚调整为53nm、将银的膜厚调整为7nm、使用铟-锌复合氧化物作为第二透明材料并将膜厚调整为51nm,除此以外,在与实施例1相同的条件下制作试样。
<实施例15>
将氧化铌的膜厚调整为47nm、将银的膜厚调整为7nm、使用铝-锌复合氧化物作为第二透明材料并将膜厚调整为58nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例1>
使用氧化锌作为第一透明材料并将膜厚调整为64nm,将银的膜厚调整为7nm,将锌-锡复合氧化物的膜厚调整为46nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例2>
使用锌-锡复合氧化物作为第一透明材料并将膜厚调整为77nm、将银的膜厚调整为7nm、使用氧化铌作为第二透明材料并将膜厚调整为35nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例3>
将氧化铌的膜厚调整为55nm、将银的膜厚调整为6nm、将锌-锡复合氧化物的膜厚调整为54nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例4>
将氧化铌的膜厚调整为55nm、将银的膜厚调整为7nm、使用氧化铌作为第二透明材料并将膜厚调整为42nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例5>
使用氧化锌作为第一透明材料并将膜厚调整为64nm,将银的膜厚调整为7nm,使用氧化锌作为第二透明材料并将膜厚调整为46nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例6>
使用氧化锌作为第一透明材料并将膜厚调整为66nm,将银的膜厚调整为7nm,使用铟-锌复合氧化物作为第二透明材料并将膜厚调整为44nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例7>
使用氧化锌作为第一透明材料并将膜厚调整为58nm,将银的膜厚调整为7nm,使用铝-锌复合氧化物作为第二透明材料并将膜厚调整为51nm,除此以外,在与实施例1相同的条件下制作试样。
<比较例8>
使用氧化锌作为第一透明材料并将膜厚调整为74nm,将银的膜厚调整为8nm,使用氧化钛作为第二透明材料并将膜厚调整为31nm,除此以外,在与实施例1相同的条件下制作试样。
[评价结果]
将各试样切成任意的尺寸后,进行测定、评价。表面电阻依据“JIS K-7194”,使用“Loresta GP(注册商标)(株式会社DIA Instruments制)”进行测定。
全光线透过率依据“JIS K-7105”,使用“NDH5000(日本电色工业株式会社制)”进行测定。
光吸收使用分光器“U-4100(株式会社日立高新技术制)”,测定入射角度5°的透过率和反射率,对于波长550nm下的各个值,将下述式(1)的式子所示的量定义为光吸收量。
光吸收(%)=100(%)-(透过率(%)+反射率(%)…(1)
即,未反射也未透过的光在薄膜和基材内部被转换为热(吸收)。实际上,有时因散射等而导致实质的透过率和反射率降低,在表观上光吸收看起来增加,但本发明中使用的基材的吸收极小,表面也平滑,因此由上式(1)求出的光吸收基本上可以视为由层叠的膜引起的吸收。
在本发明中,优选表面电阻尽可能低,并且全光线透过率尽可能高。在通常使用的ITO(铟锡复合氧化物)膜等中,虽然根据ITO的膜厚而不同,但在100Ω/□的表面电阻时全光线透过率大多为88%。因此,在显示本发明的优越性时,可以说优选电阻值为20Ω/□以下、全光线透过率为90%以上。
[表1]
<实施例1~6>
由表1可知,上述表面电阻保持在30Ω/□以下,全光线透过率保持在90%以上。另外,虽然光吸收也随着银的膜厚增加而微增,但对全光线透过率不会产生大的影响,有助于抑制本发明中已明确的产生光吸收的原因。
<实施例7~12>
与实施例1~6进行比较,示出改变了第一透明材料层时的特性。由表1可知,上述表面电阻保持在30Ω/□以下,全光线透过率保持在90%以上。即可知,就本发明所示的效果而言,第一透明材料层不限于氧化铌,即使使用不含锌的金属氧化物、具体而言氧化钛、氧化锆、氧化铪、五氧化钽、氧化钨、氧化钼等,也显示同样的效果。
<实施例13~15>
在本发明中,在实施例1~12中,作为单层的膜,使用了显示较低电阻值的锡复合氧化物作为第二透明材料层,但本发明并不限定于此。实施例13~15通过与实施例1~6比较,示出改变了第二透明材料层时的特性。由表1可知,在实施例13~15中,也保持了上述表面电阻为30Ω/□以下、全光线透过率为90%以上的特性。即可知,就本发明所示的效果而言,第二透明材料层不限定于锌-锡复合氧化物,只要是含有锌的透明导电体,就显示同样的效果。
<比较例1>
在比较例1中,第一透明材料层使用氧化锌。如表1所示,比较例1的试样与银的膜厚相同的实施例3相比,全光线透过率大幅劣化,另外,光吸收也增大,表明在第一透明材料层中使用锌氧化物时吸收增大。
<比较例2>
在比较例2中,与实施例1~6所示的结构相反,第一透明材料层使用锌-锡复合氧化物,第二透明材料层使用氧化铌。如表1所示,比较例2的试样即使与银的膜厚相同的实施例3相比,全光线透过率也降低,光吸收增大。这表明在第一透明材料层与金属层(银)的界面、金属层(银)与第二透明材料层的界面处产生的吸收分别以不同的结构产生。
<比较例3>
在比较例3中,结构与实施例1~6相同,将金属层(银)的膜厚设为6nm。如表1所示,比较例3的试样中,若使金属层(银)的膜厚变薄,则已经无法得到本发明的效果,无法维持银薄膜的连续性,在膜中形成岛状的结构,因此表面电阻急剧增大,另外光吸收量也显著增大。
<比较例4>
在比较例4中,将第一透明材料和第二透明材料均设为氧化铌。如表1所示,比较例4的试样与银的膜厚相同的实施例3相比,全光线透过率劣化,表明通过在第二透明材料中使用包含锌的材料能够抑制光吸收。另外,氧化铌的导电性也低,因此表面电阻也上升。
<比较例5~8>
比较例5~8中,第一透明材料层使用氧化锌。如表1所示,即使在第二透明材料层中使用锌-锡复合氧化物以外的物质,比较例5~8的试样的全光线透过率也没有改善而显示出较低的值,表明第一透明材料为包含锌的氧化物时,即使将第二透明材料设为任意的材料也无法得到高透过的膜。
如上所述,由实施例和比较例的结果证实了本发明的效果。需说明的是,本发明并不限定于上述例子。只要是本发明所属的技术领域的一般技术人员,在权利要求书所记载的技术思想的范畴内,显然能够想到各种变更例或修正例,这些当然也属于本发明的技术范围。
符号说明
1导电性层叠体、2透明基板、3第一透明材料层、4金属层、5第二透明材料层、10基膜、11卷出辊、12卷绕辊、21第一管状辊、22第二管状辊、31光学监视器、32光学监视器、SP溅射室。
Claims (10)
1.一种导电性层叠体,其具有透明基板并且在所述透明基板的至少一个面上从所述透明基板侧起依次层叠有第一透明材料层、以银为主要成分的金属层、第二透明材料层,
所述第一透明材料层由不含锌的金属氧化物构成,
所述第二透明材料层由包含锌的金属氧化物构成,
所述金属层的厚度为7nm以上。
2.根据权利要求1所述的导电性层叠体,其特征在于,所述金属层中银的原子比率为90%以上。
3.根据权利要求1或2所述的导电性层叠体,其特征在于,所述透明基板由玻璃、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚芳酰胺、聚酰亚胺、聚碳酸酯、聚乙烯、聚丙烯、三乙酰纤维素(TAC)、聚环烯烃(COC、COP)中的任一种或它们的层叠体构成。
4.一种光学装置,其特征在于,使用了至少1片权利要求1~3中任一项所述的导电性层叠体。
5.一种触摸面板,其特征在于,使用权利要求1~3中任一项所述的导电性层叠体作为电极的至少1个极。
6.一种调光元件,其特征在于,使用权利要求1~3中任一项所述的导电性层叠体作为电极的至少1个极。
7.一种电泳型光学元件,其特征在于,使用权利要求1~3中任一项所述的导电性层叠体作为电极的至少1个极。
8.一种发光元件,其特征在于,使用权利要求1~3中任一项所述的导电性层叠体作为电极的至少1个极。
9.一种天线,其特征在于,使用了至少1片权利要求1~3中任一项所述的导电性层叠体。
10.一种导电性层叠体的制造方法,其具有在透明基板的至少一个面上从所述透明基板侧起依次层叠第一透明材料层、以银为主要成分的金属层、第二透明材料层的工序,
所述第一透明材料层由不含锌的金属氧化物构成,所述第二透明材料层由包含锌的金属氧化物构成,所述金属层的厚度为7nm以上。
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EP2352042B1 (en) * | 2010-01-29 | 2017-05-17 | Dexerials Corporation | Optical element and method for manufacturing the same |
JP2014034701A (ja) | 2012-08-08 | 2014-02-24 | Dexerials Corp | 薄膜形成装置及び薄膜形成方法 |
KR101832521B1 (ko) * | 2013-10-02 | 2018-02-26 | 주식회사 엘지화학 | 투명전극 및 이를 포함하는 전자 소자 |
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- 2020-06-26 KR KR1020217041810A patent/KR20220024133A/ko not_active Application Discontinuation
- 2020-06-26 CN CN202080046824.6A patent/CN114026657B/zh active Active
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JP2010157497A (ja) * | 2008-12-02 | 2010-07-15 | Geomatec Co Ltd | 透明導電膜付き基板とその製造方法 |
CN105845196A (zh) * | 2015-02-04 | 2016-08-10 | 韩国科学技术研究院 | 锰锡氧化物类透明导电氧化物及利用其的多层透明导电膜以及其制备方法 |
JP2016207027A (ja) * | 2015-04-24 | 2016-12-08 | Tdk株式会社 | 透明導電体及びその製造方法、並びにタッチパネル |
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JP2021008094A (ja) | 2021-01-28 |
CN114026657B (zh) | 2024-09-13 |
TW202110622A (zh) | 2021-03-16 |
JP2024019572A (ja) | 2024-02-09 |
US20220367084A1 (en) | 2022-11-17 |
US11862361B2 (en) | 2024-01-02 |
KR20220024133A (ko) | 2022-03-03 |
WO2021002295A1 (ja) | 2021-01-07 |
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EP3995308A4 (en) | 2023-08-02 |
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