CN114005902B - 一种基于GaAs衬底的倒装多结太阳电池 - Google Patents

一种基于GaAs衬底的倒装多结太阳电池 Download PDF

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CN114005902B
CN114005902B CN202111303520.6A CN202111303520A CN114005902B CN 114005902 B CN114005902 B CN 114005902B CN 202111303520 A CN202111303520 A CN 202111303520A CN 114005902 B CN114005902 B CN 114005902B
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张小宾
王悦辉
王可
林凯文
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University of Electronic Science and Technology of China Zhongshan Institute
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Abstract

本发明公开了一种基于GaAs衬底的倒装多结太阳电池，包括GaAs衬底，在GaAs衬底的上表面按照层状叠加结构从下至上依次设置有AlAs剥离层、GaInP子电池、石墨烯/AlSbP多层结构缓冲层、第一隧道结、InP子电池、第二隧道结和GaInAs子电池。本发明利用二维石墨烯材料特性降低界面应力，同时结合生长温度递增的AlSbP层逐步释放外延应力，可提升GaAs衬底上InP、GaInAs等外延材料的晶体质量，基于GaAs衬底可得到带隙组合更加合理的GaInP/InP/GaInAs倒装三结太阳电池，从而提升多结电池的转换效率。

Description

一种基于GaAs衬底的倒装多结太阳电池
技术领域
本发明涉及太阳能光伏的技术领域，尤其是指一种基于GaAs衬底的倒装多结太阳电池。
背景技术
利用GaAs、GaInP等III_V族材料制备而成的多结太阳电池可以达到30％以上的空间转换效率，目前已经广泛应用于航天卫星的太阳能电源系统。该类电池的主流结构是GaInP/GaInAs/Ge三结太阳电池，该结构在整体晶格匹配的基础上拥有着1.9/1.4/0.67eV的带隙组合。然而该带隙组合会导致Ge子电池的电流远大于其它子电池，由于串联结构的电流限制原因，会限制电池转换效率的提升。
InP是一种直接带隙的半导体材料，禁带宽度为1.34eV，适合应用于太阳电池。另外，与InP晶格匹配的GaInAs材料带隙为0.75eV，可与InP材料结合用于制作带隙组合更优的多结太阳电池。如果基于GaAs衬底生长带隙组合为 1.85/1.34/0.75eV的GaInP/InP/GaInAs三结电池，则可以获得较大的电池进而提高电池转换效率。然而，由于InP的晶格常数明显大于GaAs，基于GaAs衬底生长InP材料时需要采用高低温缓冲层或GaInP组分渐变缓冲层等来减少外延材料的缺陷，但这些方法的缺陷抑制效果非常有限，并不能得到晶体质量很好的InP材料，因此基于GaAs衬底制备GaInP/InP/GaInAs三结太阳电池还需要克服诸多技术难题。
发明内容
本发明的目的在于克服现有技术的缺点与不足，提出一种基于GaAs衬底的倒装多结太阳电池，采用石墨烯与AlSbP相结合的多层结构缓冲层在GaAs衬底上生长InP、GaInAs等材料。利用二维石墨烯材料特性，促进石墨烯层上的化合物材料晶格重组从而降低界面应力，同时结合生长温度由低变高的AlSbP层逐步释放外延应力，减少材料缺陷。最终可提升GaAs基InP、GaInAs等外延材料的晶体质量，基于GaAs衬底可得到带隙结构更加合理、转换效率更高的 GaInP/InP/GaInAs三结太阳电池。
为实现上述目的，本发明所提供的技术方案为：一种基于GaAs衬底的倒装多结太阳电池，包括GaAs衬底，在GaAs衬底的上表面按照层状叠加结构从下至上依次设置有AlAs剥离层、GaInP子电池、石墨烯/AlSbP多层结构缓冲层、第一隧道结、InP子电池、第二隧道结和GaInAs子电池。
优选的，所述GaAs衬底为GaAs单晶片，其厚度为300～800μm。
优选的，所述AlAs剥离层的厚度为10～50nm。
优选的，所述GaInP子电池的总厚度为600～1000nm，其材料晶格常数与 GaAs衬底相同，其光学吸收带隙为1.8～1.9eV。
优选的，所述石墨烯/AlSbP多层结构缓冲层由二维石墨烯层和AlSbP层交替循环组成，循环周期为4～10，其中，AlSbP材料晶格常数与InP相同，每层 AlSbP厚度为100～300nm，AlSbP层的生长温度由下至上而逐步增高，生长温度范围为500～700℃，递增步长为20～50℃。
优选的，所述InP子电池的总厚度为1～2μm，其光学吸收带隙为1.34eV。
优选的，所述GaInAs子电池的总厚度为2～3μm，其材料晶格常数与InP相同，其光学吸收带隙为0.75eV。
本发明与现有技术相比，具有如下优点与有益效果：
本发明提供的倒装多结太阳电池，基于GaAs单晶衬底，采用石墨烯/AlSbP 多层结构缓冲层，利用二维石墨烯材料特性降低界面应力，同时结合生长温度递增的AlSbP层逐步释放外延应力，减少材料缺陷，提升GaAs衬底上InP、GaInAs等外延材料的晶体质量，最终可得到带隙结构更加合理、转换效率更高的GaAs基GaInP/InP/GaInAs倒装三结太阳电池，具有实际应用价值，值得推广。
附图说明
图1为基于GaAs衬底的倒装多结太阳电池的结构示意图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述，但本发明的实施方式不限于此。
参见图1所示，本实施例提供了一种基于GaAs衬底的倒装多结太阳电池，包括：从下至上依次层叠为GaAs衬底10、AlAs剥离层20、GaInP子电池30、石墨烯/AlSbP多层结构缓冲层40、第一隧道结50、InP子电池60、第二隧道结 70和GaInAs子电池80。GaAs衬底10为GaAs单晶片，其厚度为300～800μm。 AlAs剥离层20的厚度为10～50nm。GaInP子电池30的总厚度为600～1000nm，其材料晶格常数与GaAs衬底10相同，其光学吸收带隙为1.8～1.9eV。石墨烯 /AlSbP多层结构缓冲层40由二维石墨烯层41和AlSbP层42交替循环组成，循环周期为4～10，其中，AlSbP材料晶格常数与InP相同，每层AlSbP厚度为 100～300nm，AlSbP层的生长温度由下至上而逐步增高，生长温度范围为 500～700℃，递增步长为20～50℃。InP子电池60的总厚度为1～2μm，其光学吸收带隙为1.34eV。GaInAs子电池80的总厚度为2～3μm，其材料晶格常数与InP 相同，其光学吸收带隙为0.75eV。
下面为上述基于GaAs衬底的倒装多结太阳电池的一个具体实例制备过程，包括下述步骤：
1)选择一4英寸GaAs单晶片为衬底，采用气相沉积技术在GaAs衬底10 上生长AlAs剥离层20，生长厚度为20nm。
2)采用气相沉积技术在AlAs剥离层20上生长GaInP子电池30，总厚度为 800nm，光学吸收带隙为1.85eV。
3)采用气相沉积技术在GaInP子电池30上交替循环生长二维石墨烯层41 和AlSbP层42以形成石墨烯/AlSbP多层结构缓冲层40，其中，循环周期为10， AlSbP材料晶格常数保持与InP相同，每层AlSbP的厚度均为200nm，AlSbP层的生长温度由500℃逐步增高至700℃，递增步长为20℃。
4)采用气相沉积技术在石墨烯/AlSbP多层结构缓冲层40上依次生长第一隧道结50和InP子电池60，其中，InP子电池60总厚度为1.5μm。
5)采用气相沉积技术在InP子电池60上依次生长第二隧道结70和GaInAs 子电池80，其中，GaInAs子电池80的总厚度为3μm，其材料晶格常数保持与 InP相同。
综上所述，本发明基于GaAs单晶衬底，采用石墨烯/AlSbP多层结构缓冲层，利用二维石墨烯材料特性降低界面应力，同时结合生长温度递增的AlSbP层逐步释放外延应力，减少材料缺陷，提升GaAs衬底上InP、GaInAs等外延材料的晶体质量，在GaAs衬底上可得到带隙组合更加合理的GaInP/InP/GaInAs倒装三结太阳电池，从而提升多结电池的转换效率。总之，本发明可以基于GaAs衬底提升多结太阳电池的光电转换效率，具有实际应用价值，值得推广。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (6)

1.一种基于GaAs衬底的倒装多结太阳电池，包括GaAs衬底，其特征在于：在GaAs衬底的上表面按照层状叠加结构从下至上依次设置有AlAs剥离层、GaInP子电池、石墨烯/AlSbP多层结构缓冲层、第一隧道结、InP子电池、第二隧道结和GaInAs子电池，所述石墨烯/AlSbP多层结构缓冲层由二维石墨烯层和AlSbP层交替循环组成，循环周期为4~10，其中，AlSbP材料晶格常数与InP相同，每层AlSbP厚度为100~300nm，AlSbP层的生长温度由下至上而逐步增高，生长温度范围为500~700℃，递增步长为20~50℃。
2.根据权利要求1所述的一种基于GaAs衬底的倒装多结太阳电池，其特征在于：所述GaAs衬底为GaAs单晶片，其厚度为300~800μm。
3.根据权利要求1所述的一种基于GaAs衬底的倒装多结太阳电池，其特征在于：所述AlAs剥离层的厚度为10~50nm。
4.根据权利要求1所述的一种基于GaAs衬底的倒装多结太阳电池，其特征在于：所述GaInP子电池的总厚度为600~1000nm，其材料晶格常数与GaAs衬底相同，其光学吸收带隙为1.8~1.9eV。
5.根据权利要求1所述的一种基于GaAs衬底的倒装多结太阳电池，其特征在于：所述InP子电池的总厚度为1~2μm，其光学吸收带隙为1.34eV。
6.根据权利要求1所述的一种基于GaAs衬底的倒装多结太阳电池，其特征在于：所述GaInAs子电池的总厚度为2~3μm，其材料晶格常数与InP相同，其光学吸收带隙为0.75eV。
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