CN106409958A - 基于石墨衬底的倒装三结太阳电池及其制备方法 - Google Patents

基于石墨衬底的倒装三结太阳电池及其制备方法 Download PDF

Info

Publication number
CN106409958A
CN106409958A CN201610835582.4A CN201610835582A CN106409958A CN 106409958 A CN106409958 A CN 106409958A CN 201610835582 A CN201610835582 A CN 201610835582A CN 106409958 A CN106409958 A CN 106409958A
Authority
CN
China
Prior art keywords
battery
graphite substrate
solar cell
ohmic contact
junction solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610835582.4A
Other languages
English (en)
Other versions
CN106409958B (zh
Inventor
付蕊
牟潇野
陈诺夫
包文东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YUNNAN LINCANG XINYUAN GERMANIUM CO Ltd
Original Assignee
YUNNAN LINCANG XINYUAN GERMANIUM CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YUNNAN LINCANG XINYUAN GERMANIUM CO Ltd filed Critical YUNNAN LINCANG XINYUAN GERMANIUM CO Ltd
Priority to CN201610835582.4A priority Critical patent/CN106409958B/zh
Publication of CN106409958A publication Critical patent/CN106409958A/zh
Application granted granted Critical
Publication of CN106409958B publication Critical patent/CN106409958B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明涉及光伏技术领域，尤其是指一种基于石墨衬底的倒装三结太阳电池及其制备方法，所述电池包括GaInP顶电池、第一隧穿结、In x Ga1‑x As中电池、第二隧穿结、缓冲层、InyGa1‑ y As底电池。所述制备方法包括石墨衬底进行机械抛光、石墨衬底抛光面依次沉积Ge层、GaAs层、采用MOCVD依次外延生长第一欧姆接触层、GaInP顶电池、第一隧穿结、In x Ga1‑x As中电池、第二隧穿结、缓冲层、InyGa1‑y As底电池，第二欧姆接触层、在上述外延片第二欧姆接触层表面蒸镀背面电极并将其键合至一支撑衬底，去除外延衬底，制备正面电极，获得目标电池。本发明实现各子电池间更好的电流匹配，从而提高多结电池的光电转换效率；同时可有效降低多结电池的制作成本。

Description

基于石墨衬底的倒装三结太阳电池及其制备方法
技术领域
本发明属于光伏技术领域，具体涉及一种基于石墨衬底的倒装三结太阳电池及其制备方法。
背景技术
提高太阳电池的光电转换效率，同时降低其生产成本，一直是光伏领域的研究热点。基于Ⅲ—V族材料制备的多结太阳电池，将不同禁带宽度的子电池串联在一起，使其选择性地吸收不同波段的太阳光谱，不仅可以拓宽电池对太阳光谱的吸收范围，且减小了热化损失，可有效提高太阳电池的转换效率。目前，基于晶格匹配原理制造的Ge\GaInAs\GaInP三结太阳电池技术最为成熟，应用最为广泛，其在聚光条件下实验室最高效率为41.6% (AM1.5，364-suns)。但由于其带隙的限制，三结子电池的短路电流不匹配，光电效率很难进一步提高。同时，由于Ge是典型的烯散金属，全世界可供开采的Ge资源比较匮乏，价格昂贵，使用Ge作为多结电池的衬底不利于降低成本，并且增加了电池的总重量。
因此，实现更高效率多结太阳电池的关键在于保证高质量晶体材料生长的前提下实现最优带隙配比。目前主要技术途径为优先考虑各子电池带隙与太阳光谱的匹配，通过引入渐变缓冲层等方法来实现晶格失配材料的生长。为有效减少底电池与晶片之间的晶格失配引起的位错对其他子电池生长的不利影响，采用倒装结构的多结太阳电池，即先外延生长与衬底晶格匹配的顶电池、中电池，最后再外延底电池。而为了降低多结电池的制作成本，可采用廉价的石墨衬底来替代昂贵的Ge或者GaAs衬底。采用石墨作为衬底的另一好处是易于剥离，并且可以重复使用。
发明内容
本发明的目的在于提供一种基于石墨衬底的倒装三结太阳电池及其制备方法，实现多结电池更优的带隙配比，获得更匹配的短路电流，同时降低电池的制作成本。
本发明基于石墨衬底的倒装三结太阳电池，包括支撑衬底、背面电极、正面电极和外延结构，其特征在于，外延结构包括依次倒装生长的GaInP顶电池、第一隧穿结、In x Ga1- x As中电池、第二隧穿结、缓冲层、InyGa1-y As底电池。
进一步，在于GaInP顶电池之下设置有第一欧姆接触层，InyGa1-y As底电池之上设置有第二欧姆接触层。
进一步，所述GaInP顶电池和In x Ga1-x As中电池与外延衬底晶格匹配，其中0≤x＜0.1；所述In x Ga1-x As中电池与InyGa1-y As底电池通过所述缓冲层进行过渡，其中0<y＜0.5。
进一步，所述缓冲层采用梯度组分渐变的In z Al1-z As，其中0≤z＜0.5。
为实现上述目的，本发明还提供了所述倒装三结电池的制备方法，包括如下步骤：
（1）将石墨衬底进行机械抛光；
（2）在石墨衬底抛光面上利用金属有机化学气相沉积（MOCVD）的方法，依次沉积Ge层、GaAs层，作为倒装三结太阳电池的外延衬底；
（3）采用MOCVD依次外延生长第一欧姆接触层、GaInP顶电池、第一隧穿结、In x Ga1-x As中电池、第二隧穿结、缓冲层、InyGa1-y As底电池，第二欧姆接触层；
（4）在上述外延片第二欧姆接触层表面蒸镀背面电极并将其键合至一支撑衬底，去除外延衬底，制备正面电极，获得目标电池。
本发明的有益效果：本发明采用廉价的石墨衬底沉积Ge层和GaAs层，替代Ge或GaAs晶圆片作为多结电池的外延衬底，减少了Ge或GaAs的消耗，降低了电池的制作成本。同时，所述倒装三结太阳电池可实现更优的带隙配比，获得更匹配的短路电流，进一步提高电池的光电转换效率。
附图说明
图1为本发明实施例倒装三结太阳电池外延衬底的结构示意图。
图2为本发明实施例倒装三结太阳电池的外延结构示意图。
图3为本发明实施例倒装三结太阳电池制成品的结构示意图。
具体实施方式
实施例1：以下结合附图对本发明提供的倒装三结太阳电池及其制备方法作进一步的详细说明。
本发明基于石墨衬底制备了倒装三结太阳电池。图1示出了本实施例倒装三结电池的外延衬底，包括石墨衬底01、Ge层02、GaAs层03。图2示出了本实施例倒装三结电池的外延结构，包括石墨衬底01、Ge层02、GaAs层03、第一欧姆接触层04、GaInP顶电池05、第一隧穿结06、In x Ga1-x As中电池07、第二隧穿结08、缓冲层09、InyGa1-y As底电池10、第二欧姆接触层11。图3示出了本实施例倒装三结电池的制成品结构，包括支撑衬底12、背面电极13、第二欧姆接触层11、InyGa1-y As底电池10、缓冲层09、第二隧穿结08、In x Ga1-x As中电池07、第一隧穿结06、GaInP顶电池05、第一欧姆接触层04、正面电极14。下面介绍本实施例倒装三结电池的制备方法，包括如下步骤：
（1）将石墨衬底01进行机械抛光；
（2）在石墨衬底01抛光面上利用金属有机化学气相沉积（MOCVD）的方法，依次沉积Ge层02、GaAs层03，作为倒装三结太阳电池的外延衬底；
（3）采用MOCVD依次外延生长第一欧姆接触层04、GaInP顶电池05、第一隧穿结06、In x Ga1-x As中电池07、第二隧穿结08、缓冲层09、InyGa1-y As底电池10，第二欧姆接触层11；
（4）在上述外延片第二欧姆接触层表面蒸镀背面电极13并将其键合至一支撑衬底12，去除外延衬底，制备正面电极14，获得目标电池。

Claims (6)

1.基于石墨衬底的倒装三结太阳电池，包括支撑衬底、背面电极、正面电极和外延结构，其特征在于，外延结构包括依次倒装生长的GaInP顶电池、第一隧穿结、In x Ga1-x As中电池、第二隧穿结、缓冲层、InyGa1-y As底电池。
2.根据权利要求1所述的基于石墨衬底的倒装三结太阳电池，其特征在于GaInP顶电池之下设置有第一欧姆接触层，InyGa1-y As底电池之上设置有第二欧姆接触层。
3.根据权利要求1所述的基于石墨衬底的倒装三结太阳电池，其特征在于所述GaInP顶电池和In x Ga1-x As中电池与外延衬底晶格匹配，其中0≤x＜0.1；所述InxGa1-xAs中电池与InyGa1-yAs底电池通过所述缓冲层进行过渡，其中0<y＜0.5。
4.根据权利要求1所述的基于石墨衬底的倒装三结太阳电池，其特征在于所述缓冲层采用梯度组分渐变的InzAl1-zAs，其中0≤z＜0.5。
5.基于石墨衬底的倒装三结太阳电池制备方法，其特征在于该电池的制备工艺包括如下步骤：
（1）将石墨衬底进行机械抛光；
（2）在石墨衬底抛光面上利用金属有机化学气相沉积（MOCVD）的方法，依次沉积Ge层、GaAs层，作为倒装三结太阳电池的外延衬底；
（3）采用MOCVD依次外延生长第一欧姆接触层、GaInP顶电池、第一隧穿结、In x Ga1-x As中电池、第二隧穿结、缓冲层、InyGa1-y As底电池，第二欧姆接触层；
（4）在上述外延片第二欧姆接触层表面蒸镀背面电极并将其键合至一支撑衬底，去除外延衬底，制备正面电极，获得目标电池。
6.根据权利要求5所述的基于石墨衬底的倒装三结太阳电池制备方法，其特征在于所述Ge层厚度为0.1-2 μm；所述GaAs层厚度为0.5-3 μm。
CN201610835582.4A 2016-09-21 2016-09-21 基于石墨衬底的倒装三结太阳电池及其制备方法 Active CN106409958B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610835582.4A CN106409958B (zh) 2016-09-21 2016-09-21 基于石墨衬底的倒装三结太阳电池及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610835582.4A CN106409958B (zh) 2016-09-21 2016-09-21 基于石墨衬底的倒装三结太阳电池及其制备方法

Publications (2)

Publication Number Publication Date
CN106409958A true CN106409958A (zh) 2017-02-15
CN106409958B CN106409958B (zh) 2017-08-11

Family

ID=57996816

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610835582.4A Active CN106409958B (zh) 2016-09-21 2016-09-21 基于石墨衬底的倒装三结太阳电池及其制备方法

Country Status (1)

Country Link
CN (1) CN106409958B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111326591A (zh) * 2018-11-29 2020-06-23 东泰高科装备科技有限公司 柔性太阳能电池及其制备方法
CN111834474A (zh) * 2019-04-19 2020-10-27 东泰高科装备科技有限公司 一种三结太阳能电池的制备方法和三结太阳能电池
CN114005902A (zh) * 2021-11-05 2022-02-01 电子科技大学中山学院 一种基于GaAs衬底的倒装多结太阳电池

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299210A (zh) * 2011-09-14 2011-12-28 中国科学院苏州纳米技术与纳米仿生研究所 倒装薄膜太阳能电池的制作方法
CN102779890A (zh) * 2012-08-14 2012-11-14 厦门乾照光电股份有限公司 一种倒置三结太阳能电池及其制造方法
CN103262258A (zh) * 2010-12-16 2013-08-21 波音公司 直接将太阳能电池粘合至聚酰亚胺的方法
US20150179965A1 (en) * 2013-12-24 2015-06-25 Gwangju Institute Of Science And Technology Inverted organic electronic device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103262258A (zh) * 2010-12-16 2013-08-21 波音公司 直接将太阳能电池粘合至聚酰亚胺的方法
CN102299210A (zh) * 2011-09-14 2011-12-28 中国科学院苏州纳米技术与纳米仿生研究所 倒装薄膜太阳能电池的制作方法
CN102779890A (zh) * 2012-08-14 2012-11-14 厦门乾照光电股份有限公司 一种倒置三结太阳能电池及其制造方法
US20150179965A1 (en) * 2013-12-24 2015-06-25 Gwangju Institute Of Science And Technology Inverted organic electronic device and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111326591A (zh) * 2018-11-29 2020-06-23 东泰高科装备科技有限公司 柔性太阳能电池及其制备方法
CN111834474A (zh) * 2019-04-19 2020-10-27 东泰高科装备科技有限公司 一种三结太阳能电池的制备方法和三结太阳能电池
CN114005902A (zh) * 2021-11-05 2022-02-01 电子科技大学中山学院 一种基于GaAs衬底的倒装多结太阳电池
CN114005902B (zh) * 2021-11-05 2023-08-22 电子科技大学中山学院 一种基于GaAs衬底的倒装多结太阳电池

Also Published As

Publication number Publication date
CN106409958B (zh) 2017-08-11

Similar Documents

Publication Publication Date Title
CN102184980B (zh) 基于晶片键合的三结太阳能电池及其制备方法
US9437769B2 (en) Four-junction quaternary compound solar cell and method thereof
CN101859813B (zh) 四结GaInP/GaAs/InGaAs/Ge太阳电池的制作方法
CN101950774A (zh) 四结GaInP/GaAs/InGaAsP/InGaAs太阳电池的制作方法
CN102790120B (zh) GaInP/GaAs/Ge三结级联太阳能电池及其制备方法
CN101901854A (zh) 一种InGaP/GaAs/InGaAs三结薄膜太阳能电池的制备方法
CN102244114A (zh) 一种高倍聚光多结太阳能电池及其制备方法
CN105355680A (zh) 一种晶格匹配的六结太阳能电池
CN105355670B (zh) 一种含dbr结构的五结太阳能电池
CN102969387B (zh) GaInP/GaAs/InGaAs三结太阳能电池外延结构
CN102790116B (zh) 倒装GaInP/GaAs/Ge/Ge四结太阳能电池及其制备方法
CN106409958B (zh) 基于石墨衬底的倒装三结太阳电池及其制备方法
CN101859814A (zh) 在硅衬底上生长InGaP/GaAs/Ge三结太阳能电池的方法
CN103219414B (zh) GaInP/GaAs/InGaAsP/InGaAs四结级联太阳电池的制作方法
CN102790117B (zh) GaInP/GaAs/InGaNAs/Ge四结太阳能电池及其制备方法
CN103258872A (zh) 高效三结太阳能电池及其制作方法
CN104659158A (zh) 倒装多结太阳能电池及其制作方法
CN103077983A (zh) 多结太阳能电池及其制备方法
CN209357742U (zh) 三结叠层太阳能电池
CN105355668A (zh) 一种具有非晶态缓冲层结构的In0.3Ga0.7As电池及制备方法
CN102437227A (zh) 一种含有InAs量子点结构的多结太阳电池
CN110556445A (zh) 一种叠层并联太阳能电池
CN205385027U (zh) 一种含dbr结构的五结太阳能电池
CN210692559U (zh) 一种倒装生长的双异质结四结柔性太阳能电池
CN109103278B (zh) 一种无铝的高效六结太阳能电池及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Inverted three junction solar cell based on graphite substrate and its preparation method

Effective date of registration: 20220114

Granted publication date: 20170811

Pledgee: Yunnan Hongta Bank Co.,Ltd.

Pledgor: YUNNAN LINCANG XINYUAN GERMANIUM INDUSTRY Co.,Ltd.

Registration number: Y2022530000005

PE01 Entry into force of the registration of the contract for pledge of patent right