CN113939917A - 一种半导体结构及其制造方法 - Google Patents

一种半导体结构及其制造方法 Download PDF

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CN113939917A
CN113939917A CN201980097400.XA CN201980097400A CN113939917A CN 113939917 A CN113939917 A CN 113939917A CN 201980097400 A CN201980097400 A CN 201980097400A CN 113939917 A CN113939917 A CN 113939917A
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layer
semiconductor structure
barrier layer
trenches
channel layer
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程凯
朱昱
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Enkris Semiconductor Inc
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Enkris Semiconductor Inc
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Abstract

本发明提供一种半导体结构及其制造方法，解决了现有半导体结构的难以耗尽栅极下方的沟道载流子浓度以实现增强型器件的问题。该半导体结构，包括：依次叠加的沟道层以及势垒层，其中所述势垒层的表面定义有栅极区域；形成于所述栅极区域的多个沟槽，其中所述多个沟槽延伸至所述沟道层内；以及填充在所述多个沟槽中的P型半导体材料。

Description

PCT国内申请，说明书已公开。

Claims (10)

  1. PCT国内申请，权利要求书已公开。
CN201980097400.XA 2019-06-17 2019-06-17 一种半导体结构及其制造方法 Pending CN113939917A (zh)

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118299402A (zh) * 2023-01-04 2024-07-05 中兴通讯股份有限公司 一种氮化镓器件及氮化镓器件的制作方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212291A (ja) * 2008-03-04 2009-09-17 Toyota Motor Corp 半導体装置とその製造方法
CN102386223A (zh) * 2011-11-01 2012-03-21 中山大学 GaN高阈值电压增强型MOSHFET器件及制备方法
KR20140016105A (ko) * 2012-07-30 2014-02-07 엘지전자 주식회사 질화물 반도체 소자 및 이의 제조 방법
CN103872121A (zh) * 2011-04-02 2014-06-18 中国科学院苏州纳米技术与纳米仿生研究所 基于沟道阵列结构的异质结场效应晶体管
KR20150091705A (ko) * 2014-02-03 2015-08-12 엘지전자 주식회사 질화물 반도체 소자 및 그 제조 방법
KR101559753B1 (ko) * 2014-09-05 2015-10-14 경북대학교 산학협력단 질화물 반도체 소자 및 그 제조방법
CN106024880A (zh) * 2016-07-04 2016-10-12 厦门市三安集成电路有限公司 一种图形化栅结构的微波晶体管及其制备方法
CN106898640A (zh) * 2017-02-20 2017-06-27 中国科学院半导体研究所 一种增强型氮化物场效应晶体管及其制备方法
US20170345921A1 (en) * 2016-05-30 2017-11-30 Epistar Corporation Power device and method for fabricating thereof
CN107958928A (zh) * 2017-11-20 2018-04-24 西安电子科技大学 一种基于横向沟道调制的增强型场效应晶体管及其制作方法
US20180219086A1 (en) * 2015-07-14 2018-08-02 Denso Corporation Nitride semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
US9379195B2 (en) * 2012-05-23 2016-06-28 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
CN102856374B (zh) * 2012-10-10 2015-06-10 中山大学 一种GaN增强型MIS-HFET器件及其制备方法
US10566192B2 (en) * 2014-05-07 2020-02-18 Cambridge Electronics, Inc. Transistor structure having buried island regions
JP6641868B2 (ja) * 2015-10-09 2020-02-05 株式会社デンソー 窒化物半導体装置
CN105845723B (zh) * 2016-05-18 2019-03-15 中国科学院微电子研究所 增强型GaN基高电子迁移率晶体管及其制备方法
US9859420B1 (en) * 2016-08-18 2018-01-02 International Business Machines Corporation Tapered vertical FET having III-V channel
GB2556899B (en) * 2016-11-24 2020-09-16 Cambridge Entpr Ltd A gallium nitride transistor
CN109817712A (zh) * 2019-03-26 2019-05-28 电子科技大学 一种具有多导电沟道及鳍式栅的增强型hemt器件

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212291A (ja) * 2008-03-04 2009-09-17 Toyota Motor Corp 半導体装置とその製造方法
CN103872121A (zh) * 2011-04-02 2014-06-18 中国科学院苏州纳米技术与纳米仿生研究所 基于沟道阵列结构的异质结场效应晶体管
CN102386223A (zh) * 2011-11-01 2012-03-21 中山大学 GaN高阈值电压增强型MOSHFET器件及制备方法
KR20140016105A (ko) * 2012-07-30 2014-02-07 엘지전자 주식회사 질화물 반도체 소자 및 이의 제조 방법
KR20150091705A (ko) * 2014-02-03 2015-08-12 엘지전자 주식회사 질화물 반도체 소자 및 그 제조 방법
KR101559753B1 (ko) * 2014-09-05 2015-10-14 경북대학교 산학협력단 질화물 반도체 소자 및 그 제조방법
US20180219086A1 (en) * 2015-07-14 2018-08-02 Denso Corporation Nitride semiconductor device
US20170345921A1 (en) * 2016-05-30 2017-11-30 Epistar Corporation Power device and method for fabricating thereof
CN106024880A (zh) * 2016-07-04 2016-10-12 厦门市三安集成电路有限公司 一种图形化栅结构的微波晶体管及其制备方法
CN106898640A (zh) * 2017-02-20 2017-06-27 中国科学院半导体研究所 一种增强型氮化物场效应晶体管及其制备方法
CN107958928A (zh) * 2017-11-20 2018-04-24 西安电子科技大学 一种基于横向沟道调制的增强型场效应晶体管及其制作方法

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