CN113939917A - 一种半导体结构及其制造方法 - Google Patents

一种半导体结构及其制造方法 Download PDF

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CN113939917A
CN113939917A CN201980097400.XA CN201980097400A CN113939917A CN 113939917 A CN113939917 A CN 113939917A CN 201980097400 A CN201980097400 A CN 201980097400A CN 113939917 A CN113939917 A CN 113939917A
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layer
semiconductor structure
barrier layer
trenches
channel layer
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程凯
朱昱
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Enkris Semiconductor Inc
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Enkris Semiconductor Inc
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Abstract

本发明提供一种半导体结构及其制造方法，解决了现有半导体结构的难以耗尽栅极下方的沟道载流子浓度以实现增强型器件的问题。该半导体结构，包括：依次叠加的沟道层以及势垒层，其中所述势垒层的表面定义有栅极区域；形成于所述栅极区域的多个沟槽，其中所述多个沟槽延伸至所述沟道层内；以及填充在所述多个沟槽中的P型半导体材料。

Description

PCT国内申请，说明书已公开。

Claims (10)

  1. PCT国内申请，权利要求书已公开。
CN201980097400.XA 2019-06-17 2019-06-17 一种半导体结构及其制造方法 Pending CN113939917A (zh)

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CN118299402A (zh) * 2023-01-04 2024-07-05 中兴通讯股份有限公司 一种氮化镓器件及氮化镓器件的制作方法

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