CN113897059A - 一种石墨烯@碳化硅核壳复合聚酰亚胺渗透膜及其制备方法 - Google Patents
一种石墨烯@碳化硅核壳复合聚酰亚胺渗透膜及其制备方法 Download PDFInfo
- Publication number
- CN113897059A CN113897059A CN202111142185.6A CN202111142185A CN113897059A CN 113897059 A CN113897059 A CN 113897059A CN 202111142185 A CN202111142185 A CN 202111142185A CN 113897059 A CN113897059 A CN 113897059A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- graphene
- temperature
- core
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 105
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 96
- 239000002131 composite material Substances 0.000 title claims abstract description 65
- 239000011258 core-shell material Substances 0.000 title claims abstract description 61
- 229920001721 polyimide Polymers 0.000 title claims abstract description 53
- 239000012528 membrane Substances 0.000 title claims abstract description 43
- 239000004642 Polyimide Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000009719 polyimide resin Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000006056 electrooxidation reaction Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 229910052786 argon Inorganic materials 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 230000000630 rising effect Effects 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000008151 electrolyte solution Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000000233 ultraviolet lithography Methods 0.000 claims description 3
- 238000010612 desalination reaction Methods 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000000087 stabilizing effect Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- XTLNYNMNUCLWEZ-UHFFFAOYSA-N ethanol;propan-2-one Chemical compound CCO.CC(C)=O XTLNYNMNUCLWEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000013538 functional additive Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000001223 reverse osmosis Methods 0.000 description 1
- -1 salt ions Chemical class 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
- C08K3/042—Graphene or derivatives, e.g. graphene oxides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/10—Encapsulated ingredients
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Electrochemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111142185.6A CN113897059B (zh) | 2021-09-28 | 2021-09-28 | 一种石墨烯@碳化硅核壳复合聚酰亚胺渗透膜及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111142185.6A CN113897059B (zh) | 2021-09-28 | 2021-09-28 | 一种石墨烯@碳化硅核壳复合聚酰亚胺渗透膜及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113897059A true CN113897059A (zh) | 2022-01-07 |
CN113897059B CN113897059B (zh) | 2023-06-27 |
Family
ID=79029603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111142185.6A Active CN113897059B (zh) | 2021-09-28 | 2021-09-28 | 一种石墨烯@碳化硅核壳复合聚酰亚胺渗透膜及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113897059B (zh) |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004211182A (ja) * | 2003-01-07 | 2004-07-29 | Permelec Electrode Ltd | 過炭酸化合物の電解合成方法及び電解合成セル |
CN101381514A (zh) * | 2008-09-11 | 2009-03-11 | 东华大学 | 改善纳米二氧化硅颗粒在聚酰亚胺树脂内分散性的方法 |
CN104118842A (zh) * | 2014-07-02 | 2014-10-29 | 上海师范大学 | 碳化硅介孔阵列材料及其制备方法 |
CN105879701A (zh) * | 2016-05-06 | 2016-08-24 | 北京林业大学 | 一种二维纳米材料嵌层的新型复合正渗透膜及其制备方法 |
CN105926026A (zh) * | 2016-04-19 | 2016-09-07 | 宁波工程学院 | 一种高定向SiC纳米阵列的制备方法 |
CN106435723A (zh) * | 2016-11-16 | 2017-02-22 | 陕西聚洁瀚化工有限公司 | 外延生长碳化硅‑石墨烯薄膜的制备方法 |
CN107068539A (zh) * | 2016-12-15 | 2017-08-18 | 中国电子科技集团公司第五十五研究所 | 降低碳化硅外延基平面位错密度的方法 |
CN107177053A (zh) * | 2017-05-22 | 2017-09-19 | 陕西科技大学 | 一种钴酸镍‑碳化硅纤维多尺度增强体增强聚酰亚胺树脂基结构吸波材料及其制备方法 |
US20170296979A1 (en) * | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Membranes with tunable selectivity |
CN109224888A (zh) * | 2017-07-10 | 2019-01-18 | 浙江工业大学 | 一种氧化石墨烯框架改性聚酰胺反渗透膜及其应用 |
CN109264697A (zh) * | 2018-09-30 | 2019-01-25 | 广州特种承压设备检测研究院 | 一种pi膜制备的高导热吸波石墨烯复合膜及其制备方法 |
CN109384942A (zh) * | 2018-09-30 | 2019-02-26 | 广州特种承压设备检测研究院 | 一种柔性高导热石墨烯复合聚酰亚胺膜及其制备方法 |
CN109847586A (zh) * | 2018-12-20 | 2019-06-07 | 时代沃顿科技有限公司 | 高通量反渗透膜及其制备方法和用途 |
US20200203162A1 (en) * | 2018-12-21 | 2020-06-25 | National Chung-Shan Institute Of Science And Technology | Method for fabricating ultra-thin graphite film on silicon carbide substrate |
US20200350164A1 (en) * | 2019-04-30 | 2020-11-05 | Samsung Electronics Co., Ltd. | Graphene structure and method of forming graphene structure |
CN113151898A (zh) * | 2021-02-18 | 2021-07-23 | 北京科技大学 | 一种嵌入式金刚石基碳化硅复合衬底的制备方法 |
-
2021
- 2021-09-28 CN CN202111142185.6A patent/CN113897059B/zh active Active
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004211182A (ja) * | 2003-01-07 | 2004-07-29 | Permelec Electrode Ltd | 過炭酸化合物の電解合成方法及び電解合成セル |
CN101381514A (zh) * | 2008-09-11 | 2009-03-11 | 东华大学 | 改善纳米二氧化硅颗粒在聚酰亚胺树脂内分散性的方法 |
CN104118842A (zh) * | 2014-07-02 | 2014-10-29 | 上海师范大学 | 碳化硅介孔阵列材料及其制备方法 |
US20170296979A1 (en) * | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Membranes with tunable selectivity |
CN105926026A (zh) * | 2016-04-19 | 2016-09-07 | 宁波工程学院 | 一种高定向SiC纳米阵列的制备方法 |
CN105879701A (zh) * | 2016-05-06 | 2016-08-24 | 北京林业大学 | 一种二维纳米材料嵌层的新型复合正渗透膜及其制备方法 |
CN106435723A (zh) * | 2016-11-16 | 2017-02-22 | 陕西聚洁瀚化工有限公司 | 外延生长碳化硅‑石墨烯薄膜的制备方法 |
CN107068539A (zh) * | 2016-12-15 | 2017-08-18 | 中国电子科技集团公司第五十五研究所 | 降低碳化硅外延基平面位错密度的方法 |
WO2018108006A1 (zh) * | 2016-12-15 | 2018-06-21 | 中国电子科技集团公司第五十五研究所 | 降低碳化硅外延基平面位错密度的方法 |
CN107177053A (zh) * | 2017-05-22 | 2017-09-19 | 陕西科技大学 | 一种钴酸镍‑碳化硅纤维多尺度增强体增强聚酰亚胺树脂基结构吸波材料及其制备方法 |
CN109224888A (zh) * | 2017-07-10 | 2019-01-18 | 浙江工业大学 | 一种氧化石墨烯框架改性聚酰胺反渗透膜及其应用 |
CN109264697A (zh) * | 2018-09-30 | 2019-01-25 | 广州特种承压设备检测研究院 | 一种pi膜制备的高导热吸波石墨烯复合膜及其制备方法 |
CN109384942A (zh) * | 2018-09-30 | 2019-02-26 | 广州特种承压设备检测研究院 | 一种柔性高导热石墨烯复合聚酰亚胺膜及其制备方法 |
CN109847586A (zh) * | 2018-12-20 | 2019-06-07 | 时代沃顿科技有限公司 | 高通量反渗透膜及其制备方法和用途 |
US20200203162A1 (en) * | 2018-12-21 | 2020-06-25 | National Chung-Shan Institute Of Science And Technology | Method for fabricating ultra-thin graphite film on silicon carbide substrate |
US20200350164A1 (en) * | 2019-04-30 | 2020-11-05 | Samsung Electronics Co., Ltd. | Graphene structure and method of forming graphene structure |
CN113151898A (zh) * | 2021-02-18 | 2021-07-23 | 北京科技大学 | 一种嵌入式金刚石基碳化硅复合衬底的制备方法 |
Non-Patent Citations (1)
Title |
---|
任东;陈芳;杨艳;罗敏;: "微浓度过氧化氢的快速分光光度法检测", 现代化工 * |
Also Published As
Publication number | Publication date |
---|---|
CN113897059B (zh) | 2023-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2365111B1 (en) | Method of manufacturing of a fuel cell and a catalyst comprising a nano-crystal diamond film | |
KR101287891B1 (ko) | 연료전지용 촉매의 제조방법 | |
CN111485223B (zh) | 一种超高比表面积硼掺杂金刚石电极及其制备方法和应用 | |
JPH09199138A (ja) | 燃料電池用の電極または電極・電解質膜接合体の製造方法および燃料電池用の電極 | |
CN104178745B (zh) | 一种多孔金刚石或多孔立方碳化硅自支撑膜的制备方法 | |
KR20090132488A (ko) | 탄소나노튜브 3차원 네트워크를 포함하는 유무기 복합체, 그 제조방법 및 이를 이용하여 제조된 전자소자 | |
WO2016173127A1 (zh) | 一种垂直生长的开口碳纳米管薄膜的制备方法 | |
WO2019178885A1 (zh) | 一种电极单元及其组成的电极 | |
JP2008239369A (ja) | カーボンナノウォール(cnw)の精製方法、精製されたカーボンナノウォール、燃料電池用触媒層の製造方法、燃料電池用触媒層、及び固体高分子型燃料電池 | |
CN103259023B (zh) | 一种氢燃料电池电极材料制备方法 | |
TW201347282A (zh) | 使用於液體中之碳電極裝置及相關方法 | |
CN114614031B (zh) | 富含杂原子缺陷的石墨烯改性电极及其制备方法与应用 | |
CN111925776B (zh) | 一种聚吡咯纳米线界面改性三维石墨烯/pdms复合光热材料的制备方法 | |
CN110713176A (zh) | 一种三维分级多孔碳材料的制备及其孔径调控的方法 | |
CN110230044B (zh) | 以纳米金刚石粉为赝模板制备多孔掺硼金刚石电极的方法 | |
KR20100127577A (ko) | 그라핀이 코팅된 연료전지용 분리판 및 이의 제조방법 | |
CN113789534B (zh) | 一种多级孔道结构的电催化析氢电极及其制备方法和应用 | |
CN113897059B (zh) | 一种石墨烯@碳化硅核壳复合聚酰亚胺渗透膜及其制备方法 | |
JP2012082105A (ja) | 燃料電池用カーボンナノチューブの製造方法および燃料電池用電極触媒 | |
WO2023045041A1 (zh) | 一种基于掺杂金刚石颗粒的水处理三维电极及其制备方法 | |
KR20040025987A (ko) | 탄소나노튜브를 이용한 연료전지의 전극용 백금촉매제조방법 | |
JP2007026839A (ja) | 燃料電池用電解質膜及び燃料電池用電解質膜の製造方法 | |
CN109811313B (zh) | 一种高电阻率基底上多孔氧化铝模板的制备方法 | |
CN110957148A (zh) | 一种掺氮碳纳米管超级电容器的制备方法 | |
FR2768751A1 (fr) | Procede d'electrolyse d'une saumure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240602 Address after: 510663 No.9, Keke Road, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Guangzhou Special Equipment Testing and Research Institute (Guangzhou Special Equipment Accident Investigation Technology Center Guangzhou Elevator Safety Operation Monitoring Center) Country or region after: China Address before: 510663 No.9, Keke Road, Huangpu District, Guangzhou City, Guangdong Province Patentee before: GUANGZHOU SPECIAL PRESSURE EQUIPMENT INSPECTION AND Research Institute Country or region before: China |