CN113826200A - 芯片封装结构及芯片封装方法 - Google Patents
芯片封装结构及芯片封装方法 Download PDFInfo
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- CN113826200A CN113826200A CN201980096458.2A CN201980096458A CN113826200A CN 113826200 A CN113826200 A CN 113826200A CN 201980096458 A CN201980096458 A CN 201980096458A CN 113826200 A CN113826200 A CN 113826200A
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Abstract
一种芯片封装结构及芯片封装方法,该芯片封装结构包括至少一个第一芯片(10)、第二芯片(20)和载板(30),其中,第一芯片(10)设置于第二芯片(20)和载板(30)之间,第一芯片(10)的有源层(101)和第二芯片(20)的有源层(201)相对,第一芯片(10)和第二芯片(20)之间设置有第一互连结构(102),用于连通第一芯片(10)的有源层(101)和第二芯片(20)的有源层(201),第一芯片(10)的内部设有第一导体柱(103),该第一导体柱(103)的一端与第一芯片(10)的有源层(101)连通,第一导体柱(103)的另一端穿过第一芯片(10)与载板(30)中的电路连通。通过将两个芯片的有源层进行面对面连接,缩短两个芯片之间信号传输的线路,提高两个芯片之间的信号传输效率。
Description
PCT国内申请,说明书已公开。
Claims (19)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2019/087659 WO2020232610A1 (zh) | 2019-05-20 | 2019-05-20 | 芯片封装结构及芯片封装方法 |
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CN113826200A true CN113826200A (zh) | 2021-12-21 |
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CN201980096458.2A Pending CN113826200A (zh) | 2019-05-20 | 2019-05-20 | 芯片封装结构及芯片封装方法 |
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US (1) | US20220077123A1 (zh) |
EP (1) | EP3958307A4 (zh) |
CN (1) | CN113826200A (zh) |
WO (1) | WO2020232610A1 (zh) |
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CN103887231A (zh) * | 2014-04-02 | 2014-06-25 | 华进半导体封装先导技术研发中心有限公司 | 用于tsv背面漏孔及介质层与tsv的自对准工艺 |
CN104143526A (zh) * | 2013-05-09 | 2014-11-12 | 盛美半导体设备(上海)有限公司 | 穿透硅通孔结构制作方法 |
CN104253056A (zh) * | 2013-06-27 | 2014-12-31 | 三星电子株式会社 | 具有穿通电极的半导体封装及其制造方法 |
EP3007225A1 (en) * | 2014-10-01 | 2016-04-13 | MediaTek Inc. | Semiconductor package assembly |
CN109309074A (zh) * | 2017-07-27 | 2019-02-05 | 台湾积体电路制造股份有限公司 | 半导体封装件及其形成方法 |
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CN2636411Y (zh) * | 2003-08-01 | 2004-08-25 | 威盛电子股份有限公司 | 多芯片封装结构 |
US8936966B2 (en) * | 2012-02-08 | 2015-01-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging methods for semiconductor devices |
US20130241057A1 (en) * | 2012-03-14 | 2013-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Direct Connections to Through Vias |
CN103258806B (zh) * | 2013-05-08 | 2016-01-27 | 日月光半导体制造股份有限公司 | 具桥接结构的半导体封装构造及其制造方法 |
US9449837B2 (en) * | 2014-05-09 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D chip-on-wafer-on-substrate structure with via last process |
TWI606563B (zh) * | 2016-04-01 | 2017-11-21 | 力成科技股份有限公司 | 薄型晶片堆疊封裝構造及其製造方法 |
US9761559B1 (en) * | 2016-04-21 | 2017-09-12 | Micron Technology, Inc. | Semiconductor package and fabrication method thereof |
US20180076179A1 (en) * | 2016-09-09 | 2018-03-15 | Powertech Technology Inc. | Stacked type chip package structure and manufacturing method thereof |
DE102018116750A1 (de) * | 2017-09-29 | 2019-04-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung und Herstellungsverfahren |
CN107731761A (zh) * | 2017-09-30 | 2018-02-23 | 睿力集成电路有限公司 | 底部半导体封装件及其制造方法 |
DE102018102086A1 (de) * | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleiter-packages und verfahren zu deren herstellung |
-
2019
- 2019-05-20 EP EP19930096.3A patent/EP3958307A4/en active Pending
- 2019-05-20 WO PCT/CN2019/087659 patent/WO2020232610A1/zh unknown
- 2019-05-20 CN CN201980096458.2A patent/CN113826200A/zh active Pending
-
2021
- 2021-11-19 US US17/531,133 patent/US20220077123A1/en active Pending
Patent Citations (6)
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US20110068427A1 (en) * | 2009-09-18 | 2011-03-24 | Amkor Techonology Korea, Inc. | Stackable wafer level package and fabricating method thereof |
CN104143526A (zh) * | 2013-05-09 | 2014-11-12 | 盛美半导体设备(上海)有限公司 | 穿透硅通孔结构制作方法 |
CN104253056A (zh) * | 2013-06-27 | 2014-12-31 | 三星电子株式会社 | 具有穿通电极的半导体封装及其制造方法 |
CN103887231A (zh) * | 2014-04-02 | 2014-06-25 | 华进半导体封装先导技术研发中心有限公司 | 用于tsv背面漏孔及介质层与tsv的自对准工艺 |
EP3007225A1 (en) * | 2014-10-01 | 2016-04-13 | MediaTek Inc. | Semiconductor package assembly |
CN109309074A (zh) * | 2017-07-27 | 2019-02-05 | 台湾积体电路制造股份有限公司 | 半导体封装件及其形成方法 |
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US20220077123A1 (en) | 2022-03-10 |
WO2020232610A1 (zh) | 2020-11-26 |
EP3958307A1 (en) | 2022-02-23 |
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