CN113795376A - 复合部件和散热部件 - Google Patents
复合部件和散热部件 Download PDFInfo
- Publication number
- CN113795376A CN113795376A CN202080023413.5A CN202080023413A CN113795376A CN 113795376 A CN113795376 A CN 113795376A CN 202080023413 A CN202080023413 A CN 202080023413A CN 113795376 A CN113795376 A CN 113795376A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- outermost
- composite member
- composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 99
- 239000010410 layer Substances 0.000 claims abstract description 298
- 239000000758 substrate Substances 0.000 claims abstract description 104
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000011247 coating layer Substances 0.000 claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 35
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 35
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 27
- 239000011777 magnesium Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 229910000861 Mg alloy Inorganic materials 0.000 claims abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011574 phosphorus Substances 0.000 claims abstract description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 37
- 238000005260 corrosion Methods 0.000 abstract description 37
- 230000017525 heat dissipation Effects 0.000 abstract description 25
- 238000007747 plating Methods 0.000 description 26
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 20
- 229910000679 solder Inorganic materials 0.000 description 16
- 229910052755 nonmetal Inorganic materials 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910018104 Ni-P Inorganic materials 0.000 description 6
- 229910018536 Ni—P Inorganic materials 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000002843 nonmetals Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910019752 Mg2Si Inorganic materials 0.000 description 1
- 229910020073 MgB2 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000009715 pressure infiltration Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1005—Pretreatment of the non-metallic additives
- C22C1/1015—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1005—Pretreatment of the non-metallic additives
- C22C1/1015—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform
- C22C1/1021—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform the preform being ceramic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C23/00—Alloys based on magnesium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/065—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/027—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal matrix material comprising a mixture of at least two metals or metal phases or metal matrix composites, e.g. metal matrix with embedded inorganic hard particles, CERMET, MMC.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/302—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/714—Inert, i.e. inert to chemical degradation, corrosion
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12576—Boride, carbide or nitride component
Abstract
提供了一种基板的耐腐蚀性优异并且散热性优异的复合部件。该复合部件具备:由含有镁或镁合金和SiC的复合材料构成的基板;以及设置在所述基板的表面的被覆层,所述被覆层具有设置在最表面的最表面层;以及设置在所述最表面层的正下方的中间层,所述最表面层包含镍和磷,所述中间层以铜为主要成分,所述中间层的厚度为30μm以上。
Description
技术领域
本公开涉及复合部件和散热部件。本申请要求基于2019年4月2日提出的日本专利申请特愿2019-070853号的优先权。通过参照将该日本专利申请所记载的全部记载内容援引至本说明书中。
背景技术
日本特开2012-144767号公报(专利文献1)的复合部件具备:由复合材料构成的基板;以及覆盖基板的表面的金属被覆层。复合材料由镁或镁合金与SiC复合而成。金属被覆层从基板侧开始依次具备下底层、锌层、铜镀层、镍镀层。
现有技术文献
专利文献
专利文献1:日本特开2012-144767号公报
发明内容
本公开涉及的复合部件具备:
由含有纯镁或镁合金和SiC的复合材料构成的基板;以及
设置在所述基板的表面的被覆层,
所述被覆层具有:
设置在最表面的最表面层;以及
设置在所述最表面层的正下方的中间层,
所述最表面层含有镍和磷,
所述中间层以铜为主要成分,
所述中间层的厚度为30μm以上。
本公开涉及的散热部件由上述本公开涉及的复合部件构成。
附图说明
[图1]图1为示出实施方式1涉及的复合部件的概要的剖面图。
[图2]图2为示出实施方式1涉及的复合部件所具备的基板的织构的概要的说明图。
[图3]图3为示出实施方式1涉及的复合部件所具备的被覆层的概要的剖面图。
[图4]图4为示出实施方式2涉及的复合部件所具备的被覆层的概要的剖面图。
具体实施方式
[本公开所要解决的课题]
期望开发一种基板的耐腐蚀性优异且散热性优异的复合部件。
因此,本公开的目的之一在于提供一种基板的耐腐蚀性优异且散热性优异的复合部件。此外,本公开的另一个目的在于提供一种基板的耐腐蚀性优异且散热性优异的散热部件。
[本公开的效果]
本公开涉及的复合部件和本公开涉及的散热部件在基板的耐腐蚀性方面优异,并且散热性优异。
[本公开的实施方式的说明]
本发明人对具有由镍构成的最表面层、以及设置在最表面层的正下方且由铜构成的中间层的上述复合部件中基板的耐腐蚀性进行了研究。一般来说,镍的离子化倾向大于铜的离子化倾向。因此,本发明人认为在盐水中等腐蚀环境下,可以得到以下结果。不是由铜构成的中间层而是由镍构成的最表面层成为优先腐蚀的牺牲层。其结果,传统的复合部件可以抑制中间层的腐蚀,从而可以抑制基板的腐蚀。
然而,在腐蚀环境下,基板发生了腐蚀。本发明人对其原因进行了深入研究,结果获得了以下发现。在腐蚀环境下,镍和铜的离子化倾向的大小关系发生逆转。即,在腐蚀环境下,铜的离子化倾向变得大于镍的离子化倾向。因此,不是最表面层而是中间层发生腐蚀。当最表面层由镍构成时,即使中间层的厚度再厚,也难以抑制基板的腐蚀。
因此,本发明人进一步对被覆层的构成进行了深入的研究,结果获得了以下发现。通过最表面层中除镍之外还含有磷,并且增大设置在最表面层的正下方且以铜为主要成分的中间层的厚度,可以提高基板的耐腐蚀性。本发明是基于这些发现而得到的。首先,列出本公开的实施方式并进行说明。
(1)本公开的一个方式涉及的复合部件具备:
由含有纯镁或镁合金和SiC的复合材料构成的基板;以及
设置在所述基板的表面的被覆层,
所述被覆层具有:
设置在最表面的最表面层;以及
设置在所述最表面层的正下方的中间层,
所述最表面层含有镍和磷,
所述中间层以铜为主要成分,
所述中间层的厚度为30μm以上。
在上述构成中,基板的耐腐蚀性优异。其理由在于,设置在以铜为主要成分的中间层的正上方的最表面层除了镍之外还含有磷。并且,还因为中间层的厚度足够厚。由于最表面层除了镍之外还含有磷,即使在最表面层的正下方设置以铜为主要成分的中间层,在腐蚀环境下,最表面层和中间层的构成材料的离子化倾向的大小关系也不会逆转。即,最表面层的构成材料的离子化倾向大于中间层的构成材料的离子化倾向。因此,即使在腐蚀环境下,也不是中间层而是最表面层成为优先腐蚀的牺牲层。由此,抑制了中间层的腐蚀。这样抑制了中间层的腐蚀,并且由于中间层足够厚,因此抑制了基板的腐蚀。
此外,上述构成的散热性优异。其理由在于,以导热率高的铜为主要成分的中间层的厚度足够厚。因此,上述构成适合用于散热部件。
此外,上述构成与焊料的密合性优异。其理由在于最表面层含有镍,因此与焊料的相容性优异。因此,上述构成与(例如)半导体装置的半导体元件、安装有半导体元件的绝缘基板等通过焊料而接合的对象部件的密合性优异。
(2)作为上述复合部件的一个方式,可以列举出以下方式:
所述被覆层具有设置在所述中间层的正下方的内侧层,
所述内侧层含有镍和磷。
上述构成提高了基板与被覆层的密合性。这是因为,内侧层含有镍和磷,因此对基板和中间层中的任一者都具有良好的相容性。
(3)作为上述复合部件的一个方式,可以列举出以下方式:
所述中间层的厚度为200μm以下。
上述构成容易抑制热膨胀系数的增加、重量的增加、以及产率的降低。其理由在于,中间层的厚度不过于厚。这样,上述构成如上所述那样具有优异的散热性,并且通过本构成可以抑制热膨胀系数的增加,从而更适合用作散热部件。特别是,上述构成如上述那样与焊料的密合性也优异,因此适用于通过焊料而接合的对象部件的散热部件。其理由在于,热膨胀系数的增加受到抑制,即使经受热循环,对象部件也难以因热膨胀收缩从复合部件剥离。
(4)本公开的一个方式涉及的散热部件由上述(1)至上述(3)中任一项所记载的复合部件构成。
上述构成具有优异的散热性。其理由在于,散热部件由散热性优异的复合部件构成。特别是,上述构成容易有效地释放通过焊料而接合的对象部件的热量。其理由在于,散热部件是由与焊料的密合性优异的复合部件构成。此外,即使在腐蚀环境下,也可以适当地使用上述构成。其理由在于,散热部件是由具备耐腐蚀性优异的基板的复合部件构成。
[本公开的实施方式的细节]
以下,对本公开的实施方式的细节进行说明。图中的相同符号表示相同名称物质。
《实施方式1》
〔复合部件〕
参照图1至图3对实施方式1的复合部件1进行说明。本方式的复合部件1具备基板2和被覆层3。基板2由含有纯镁(Mg)或Mg合金和SiC(碳化硅)的复合材料构成。被覆层3设置在基板2的表面。本方式的复合部件1的特征之一在于以下方面,即被覆层3具有设置在最表面的特定的最表面层32以及设置在最表面层32的正下方的特定的中间层31(图3)。以下,对各构成进行详细地说明。图2将图1的基板2上所示的、由虚线圆所包围的区域放大地示出。图3将图1的基板2与被覆层3的边界附近所示的、由虚线椭圆所包围的区域放大地示出。
[基板]
基板2由含有金属20和非金属22的复合材料构成(图2)。基板2可以使用已知的材料。
(金属)
金属20由纯Mg或Mg合金构成。纯Mg含有99.8质量%以上的Mg,并且余量由不可避免的杂质构成。Mg合金含有添加元素,并且余量由Mg和不可避免的杂质构成。添加元素例如可列举出:选自由Li(锂)、Ag(银)、Ni(镍)、Ca(钙)、Al(铝)、Zn(锌)、Mn(锰)、Si(硅)、Cu(铜)、Zr(锆)、Be(铍)、Sr(锶)、Y(钇)、Sn(锡)、Ce(铈)、以及稀土元素(除了Y、Ce以外)组成的组中的至少一种元素。当将Mg合金整体设为100质量%时,这些元素的总含量优选为20质量%以下。对于上述总含量为20质量%以下的基板2,由于添加元素的含量不太多,因此可以抑制导热率的降低。Mg合金可以使用已知规格的合金等。与金属20由Mg合金构成的基板2相比,金属20由纯Mg构成的基板2倾向于具有更优异的导热率。另一方面,与金属20由纯Mg构成的基板2相比,金属20由Mg合金构成的基板2倾向于具有更优异的耐腐蚀性等。
(非金属)
非金属22由SiC构成。SiC的导热率高。因此,该基板2可以适合用作散热部件。此外,与Mg相比,SiC的热膨胀系数小。因此,该基板2与(例如)半导体装置(图示省略)的半导体元件、安装有半导体元件的绝缘基板等对象部件的热膨胀系数的匹配性优异。由此,该基板2适合于半导体元件等的散热部件。
〈存在形态〉
非金属22的存在状态代表性地可列举出:粉末形态、网状形态。在粉末形态中,非金属22作为粉末粒子而存在于金属20的基体中。网状形态是指:非金属22通过将非金属22彼此结合的网状部连接,并且在非金属22间填充了金属20的形态。基板2中的非金属22基本上保持(代表性地)原料所使用的组成、形状、大小等而存在。若在原料中使用SiC粉末,则非金属22的存在状态为上述粉末形态。此外,若在原料中使用网状的SiC多孔体等的成形体,则非金属22的存在状态为上述网状形态。
〈含量〉
当将基板2设为100体积%时,基板2中的SiC的含量优选为50体积%以上。由于SiC的含量为50体积%以上,因此导热率容易升高,并且热膨胀系数容易减小。基板2中的SiC含量越多,基板2的导热率越容易升高,并且基板2的热膨胀系数越容易减小。基板2中的SiC含量进一步优选为60体积%以上、特别优选为65体积%以上。基板2中的SiC的含量优选为(例如)90体积%以下。其理由在于,通过SiC的含量为90体积%以下,基板2的制造性优异。基板2中的SiC的含量进一步优选为85体积%以下。
(其他)
除了SiC以外,基板2还可以含有以下非金属。非金属例如可以列举出:选自Si3N4、Si、MgO、Mg2Si、MgB2、Al2O3、AlN、SiO2、金刚石、以及石墨中的至少1种。这些非金属的热膨胀系数比Mg小,导热性优异,并且难以与Mg反应。
(平面形状)
对基板2的平面形状没有特别地限定,可以根据复合部件1的用途适当地选择。基板2的平面形状代表性地可列举出矩形状。另外,基板2的平面形状可列举出:圆形、椭圆形、除了矩形以外的各种多边形等。
(厚度)
对基板2的厚度没有特别地限定,可以根据复合部件1的用途适当地选择。在将复合部件1用作(例如)半导体元件等的散热部件的情况下,基板2的厚度例如可列举出10mm以下、进一步可列举出6mm以下。
[被覆层]
被覆层3设置在基板2的表面(图1)。被覆层3的被覆区域可以根据复合部件1的用途适当地选择。在将复合部件1用于半导体元件等的散热部件的情况下,在基板2的相对的一对面中,一个面用作安装半导体元件的安装面。另一个面用作与冷却装置接触的冷却面。通常,在上述安装面上涂布焊料。因此,被覆层3的被覆区域可列举出安装面的至少涂布有焊料的区域。被覆层3的被覆区域可以是遍及基板2的安装面的整个区域的区域,也可以是遍及基板2的安装面和冷却面的整个区域的区域,也可以是遍及基板2的表面的整个区域的区域。在本方式中,被覆层3为从基板2侧开始依次具有中间层31、最表面层32的二层结构(图3)。图3的中间层31的厚度和最表面层32的厚度是示意性示出的,并不一定与实际的厚度相对应。
(中间层)
中间层31设置在最表面层32的正下方。在本方式中,该中间层31设置在基板2的正上方。
中间层31以Cu为主要成分。以Cu为主要成分是指:当将中间层31的全部构成元素设为100质量%时,Cu的含量满足98.0质量%以上。中间层31中的Cu的含量进一步优选为99.0质量%以上、特别优选为99.5质量%以上。中间层31也可以基本上仅由Cu构成。基本上仅由Cu构成是指:除了Cu以外,允许含有不可避免的杂质。这里,中间层31的组成和含量是通过能量分散型X射线分析(EDX)来求得的。
中间层31的厚度可列举出30μm以上。对于中间层31的厚度满足30μm以上的复合部件1,基板2的耐腐蚀性优异,并且散热性优异。其理由在于,中间层31的厚度足够厚。中间层31的厚度优选为200μm以下。中间层31的厚度满足200μm以下的复合部件1容易抑制热膨胀系数的增加、重量的增加、产率的降低。其理由在于,中间层31的厚度不过于厚。该复合部件1的散热性优异且可以抑制热膨胀系数的增加,因此适合于散热部件。中间层31的厚度进一步优选为50μm以上150μm以下、特别优选为80μm以上100μm以下。中间层31的厚度的求法将在后面叙述。
(最表面层)
最表面层32设置在被覆层3的最表面。该最表面层32设置在中间层31的正上方。最表面层32的组成含有Ni和P(磷)。由于含有Ni的最表面层32与焊料的相容性优异,因此与焊料的密合性优异。因此,最表面层32与通过焊料而接合的半导体元件等对象部件的密合性优异。此外,对于除了Ni以外还包含P的最表面层32,即使在其正下方设置中间层31,在腐蚀环境下也具有作为优先腐蚀的牺牲层的功能。因此,最表面层32可以抑制中间层31的腐蚀。由此,最表面层32可以抑制基板2的腐蚀。
当将最表面层32的全部构成元素设为100质量%时,最表面层32中的Ni的含量可列举出87质量%以上99质量%以下。当将最表面层32的全部构成元素设为100质量%时,最表面层32中的P的含量可列举出1质量%以上13质量%以下。P的含量越少,最表面层32与焊料的密合性越高。P的含量越多,最表面层32的耐腐蚀性越优异。最表面层32中的P的含量可以根据所需要的特性在上述范围内进行适当地选择。最表面层32也可以基本上仅由Ni和P构成。基本上仅由Ni和P构成是指:除了Ni和P以外,允许含有不可避免的杂质。与上述中间层31同样地,最表面层32的组成和含量通过EDX来求得。
最表面层32的厚度例如优选为0.1μm以上6.0μm以下。在最表面层32的厚度为0.1μm以上的复合部件1中,基板2的耐腐蚀性优异,且与焊料的密合性优异。其理由在于,最表面层32的厚度足够厚。最表面层32的厚度为6.0μm以下的复合部件1容易抑制热膨胀系数的增加、导热率的降低、产率的降低。最表面层32的厚度进一步优选为1.5μm以上5.0μm以下、特别优选为2.0μm以上4.0μm以下。最表面层32的厚度的求法将在后面叙述。
[制造方法]
本方式的复合部件1可以通过以下方式来制造:在基板2的表面上,从基板2侧开始依次形成中间层31、最表面层32。基板2可以通过已知的熔渗法、加压熔渗法、粉末冶金法、熔融法等制造从而准备,也可以通过购入市售品等来准备。中间层31的形成通过直接电镀来进行。直接电镀是通过将催化剂附着在基板2上来进行。作为催化剂,例如可列举出钯、碳。另外,中间层31可以通过在无电镀Cu之后再进行电镀Cu来形成。此外,中间层31可以通过在溅射Cu之后再进行电镀Cu来形成。最表面层32的形成通过镀覆法等来进行。作为镀覆法,可列举出电镀、无电镀等。
〔作用效果〕
对于本方式的复合部件1,基板2的耐腐蚀性和散热性优异。因此,本方式的复合部件1可以适用于在腐蚀环境下所使用的散热部件。此外,本方式的复合部件1与焊料的密合性优异,并且与半导体等的热膨胀系数的匹配性优异。因此,本方式的复合部件1适用于通过焊料而接合的半导体元件等的散热部件。
《实施方式2》
〔复合部件〕
参照图4对实施方式2的复合部件1进行说明。本方式的复合部件1在以下方面与实施方式1的复合部件1不同:被覆层3在中间层31的正下方具有特定的内侧层30。即,被覆层3为从基板2侧开始依次具有内侧层30、中间层31、最表面层32的三层结构。图4是将与图3所示的剖面图相同的位置放大并示出的剖面图。以下的说明将集中于与实施方式1不同的方面。省略与实施方式1相同的构成的说明。
[被覆层]
(内侧层)
内侧层30设置在中间层31的正下方。在本方式中,该内侧层30设置在基板2的正上方。
内侧层30的组成含有Ni和P。含有Ni和P的内侧层30与基板2和中间层31的密合性优异。内侧层30中的Ni的含量可列举出与上述最表面层32相同的范围。同样地,内侧层30中的P的含量可列举出与上述最表面层32相同的范围。内侧层30可以基本上仅由Ni和P构成。基本上仅由Ni和P构成是指:除了Ni和P以外,允许含有不可避免的杂质。内侧层30中的Ni和P的含量可以与最表面层32相同也可以不同。与上述中间层31等同样地,内侧层30的材质可以通过EDX来获得。
内侧层30的厚度例如优选为3.0μm以上20.0μm以下。对于内侧层30的厚度为3.0μm以上的复合部件1,基板2的耐腐蚀性优异。其理由在于,内侧层30的厚度足够厚。内侧层30的厚度为20.0μm以下的复合部件1容易抑制复合部件1的热膨胀系数的增加、导热率的降低。内侧层30的厚度进一步优选为4.0μm以上15.0μm以下、特别优选为6.0μm以上12.0μm以下。内侧层30的厚度可以与最表面层32的厚度相同,也可以与最表面层32的厚度不同。内侧层30的厚度的求法将在后面叙述。
[制造方法]
本方式的复合部件1可以通过以下方式来制造:在基板2的表面上,从基板2侧开始依次形成内侧层30、中间层31、最表面层32。基板2的准备如上所述。与上述最表面层32的形成同样地,内侧层30的形成采用镀覆法等来进行。中间层31和最表面层32的形成如上所述。
〔作用效果〕
本方式的复合部件1可以取得与实施方式1的复合部件1同样的效果。并且,与实施方式1的复合部件1相比,本方式的复合部件1的被覆层3具有内侧层30,因此基板2与被覆层3的密合性优异。
实施例
通过实施例对本实施方式进行更具体的说明。但是,本实施方式并不限于这些实施例。
《试验例1》
制作在基板的表面上形成了各种被覆层的复合部件,并研究了复合部件中的基板的耐腐蚀性、复合部件的热膨胀系数(ppm/K)及导热率(W/m·K)。基板使用由含有纯Mg和SiC的复合材料构成的基板。基板中的SiC的含量设为70体积%。基板的厚度为5mm。
〔试样No.1~No.4〕
试样No.1~No.4的复合部件通过以下方式来制作:在基板的正上方从基板侧开始,形成依次具有第一层和第二层的二层结构的被覆层。即,第二层为最表面层。此外,第一层为设置在最表面层的正下方的层。第一层形成了基本上仅由Cu构成的Cu镀层。第一层的形成通过直接电镀来进行。直接电镀通过使用钯作为附着在基板上的催化剂粉末来进行。此时,通过各种改变处理时间,以使第一层的厚度有所不同。第二层形成了基本上仅由Ni和P构成的Ni-P镀层。第二层的形成通过无电镀来进行。无电镀的镀液使用奥野制药工业株式会社制造的トップニコロンLPH-LF。镀液的温度设为85℃。处理时间设为15分钟。第二层中的P的浓度为2质量%。P的浓度如上所述通过EDX来求得。
〔试样No.5、No.6〕
除了第二层的P的含量不同这一方面以外,以与试样No.2同样地方式制作了试样No.5、No.6的复合部件。即,在试样No.5、No.6的复合部件中,第二层为最表面层。此外,在试样No.5、No.6的复合部件中,第一层是设置在最表面层的正下方的层。在试样No.5、No.6中,在第二层的形成中所使用的无电镀的镀液的种类、镀液的温度、以及处理时间等与试样No.2不同。具体而言,在试样No.5中,镀液使用奥野制药工业株式会社制的ICPニコロンGM(NP)。镀液的温度设为80℃。处理时间设为13分钟。在试样No.6中,镀液使用奥野制药工业株式会社制造的トップニコロンSA-98-LF。镀液的温度设为90℃。处理时间设为13分钟。试样No.5的复合部件的第二层中的P的浓度为6质量%。试样No.6的复合部件的第二层中的P的浓度为11质量%。与上述同样地,各第二层的P的浓度通过EDX来求得。
〔试样No.7~No.10〕
试样No.7~No.10的复合部件通过以下方式来制作:在基板的正上方从基板侧开始,形成依次具有第一层、第二层、以及第三层的三层结构的被覆层。即,第三层为最表面层。此外,第二层为设置在最表面层的正下方的层。此外,第一层为设置在第二层的正下方的层。与试样No.1的第二层同样地,第一层和第三层均形成了基本上仅由Ni和P构成的Ni-P镀层(P的含量为2质量%)。对于第一层和第三层,通过改变处理时间,以使厚度不同。与试样No.1等的第一层同样地,第二层形成了基本上仅由Cu构成的Cu镀层。
〔试样No.101、No.102〕
除了第一层的厚度不同这一方面以外,以与试样No.1同样的方式制作了试样No.101的复合部件。在试样No.101的复合部件中,第二层为最表面层。此外,在试样No.101的复合部件中,第一层为设置在最表面层的正下方的层。除了第二层的厚度不同这一方面以外,以与试样No.7同样的方式制作试样No.102的复合部件。在试样No.102的复合部件中,第三层为最表面层。此外,在试样No.102的复合部件中,第二层为设置在最表面层的正下方的层。此外,在试样No.102的复合部件中,第一层为设置在第二层的正下方的层。
〔试样No.103〕
试样No.103的复合部件通过以下方式来制作:在基板的正上方从基板侧开始,形成依次具有第一层和第二层的二层结构的被覆层。即,第二层为最表面层。此外,第一层为设置在最表面层的正下方的层。第一层形成了基本上由Zr构成的层。第一层的形成通过化成处理来进行。与试样No.1的第二层同样地,第二层形成了基本上仅由Ni和P构成的Ni-P镀层。
〔试样No.104〕
试样No.104的复合部件通过在基板的正上方形成仅由第一层构成的被覆层来制作。与试样No.1的第二层同样地,第一层形成了基本上仅由Ni和P构成的Ni-P镀层。
〔试样No.105〕
试样No.105的复合部件通过以下方式来制作:在基板的正上方从基板侧开始,形成依次具有第一层和第二层的二层结构的被覆层。即,第二层为最表面层。此外,第一层为设置在最表面层的正下方的层。与试样No.1的第二层同样地,第一层形成了基本上仅由Ni和P构成的Ni-P镀层。第二层形成了Ni镀层。第二层的形成通过电镀来进行。
〔试样No.106~No.110〕
试样No.106~No.110的复合部件通过以下方式来制作:在基板的正上方从基板侧开始,形成依次具有第一层、第二层、以及第三层的三层结构的被覆层。即,第三层为最表面层。此外,第二层为设置在最表面层的正下方的层。此外,第一层为设置在第二层的正下方的层。与试样No.1的第二层同样地,第一层形成了基本上仅由Ni和P构成的Ni-P镀层。与试样No.1等的第一层同样地,第二层形成了基本上仅由Cu构成的Cu镀层。与试样No.105的第二层同样地,第三层形成了Ni镀层。
〔厚度测定〕
各层的厚度通过以下方式来求得。对各试样实施CP(Cross-section Polisher:截面抛光仪)加工,取厚度方向的截面。在该截面中,通过扫描电子显微镜来获取10个以上的观察视野。各视野的倍率和各视野的尺寸是在同一视野内,包含各层的厚度方向的整个区域的尺寸。在各观察视野中,在10个位置以上测量沿着厚度方向的各层的长度。在各层中,取所测定的所有长度的平均值。各平均值设为各层的厚度。各层的厚度显示在表1中。
〔耐腐蚀性的评价〕
耐腐蚀性的评价通过以下方式来进行:根据JIS Z 2371(2015)进行盐水喷雾试验,并研究了孔蚀的发生时间和168小时(hr)后的腐蚀状态。盐水喷雾试验使用5质量%浓度的氯化钠水溶液。试验温度设为35℃。试验时间设为168小时。
通过目视来确认孔蚀的发生。该确认从试验开始至168小时结束,每24小时进行一次。其结果显示在表1中。表1中的孔蚀开始时间一栏中的“-”表示没有发生孔蚀。
通过目视来确认经过168小时后各试样的腐蚀状态。经过168小时后的状态的评价以“A”、“B”、“C”三个阶段进行。将没有发生孔蚀的试样设为“A”,发生孔蚀的试样设为“B”,没有保持试样的形状的试样设为“C”。没有保持试样的形状是指:基板的四个角消失,或者由腐蚀生成物覆盖复合部件的整个表面的情况。在由腐蚀生成物覆盖复合部件的整个表面的情况下,基板自身发生腐蚀。其结果显示在表1中。
〔热膨胀系数和导热率的测定〕
热膨胀系数和导热率的测定是通过从各试样切出测定用的试验片,并使用市售的测定器(NETZSCH JAPAN制TMA4000SE)来进行的。导热率在室温(20℃左右)测定。热膨胀系数是在30℃~120℃的范围内测定而得的平均值。这些结果显示在表1中。
[表1]
如表1所示,对于试样No.1~No.10的复合部件,从盐水喷雾试验开始至经过168小时后,没有发生孔蚀。试样No.1~No.3、No.5~No.10的复合部件的热膨胀系数为7.5ppm/K、7.6ppm/K。与此相对,试样No.4的复合部件的热膨胀系数为7.8ppm/K,与试样No.1等相比,热膨胀系数升高。试样No.1~No.10的复合部件的导热率均为220W/m·K以上。在试样No.1~No.10的复合部件中,基本上由Cu构成的Cu层(在试样No.1~No.6中为第一层、在试样No.7~No.10中为第二层)的厚度越厚,导热率倾向于越高。
与此相对,从盐水喷雾试验开始至96小时的时间点,试样No.101~No.110的复合部件均发生孔蚀。特别是,从盐水喷雾试验开始至经过168小时后,试样No.103、No.104的复合部件未能保持形状。
如上所述,对本公开的实施方式和实施例进行了说明,但是最初也预定了将上述各实施方式和实施例的构成适当地组合,或者进行各种变形。
应认为本次所公开的实施方式和实施例在所有方面都是示例性的,而不是限制性的。本发明的范围是由权利要求书表示,而不是由上述实施方式和实施例表示,并且旨在包括与权利要求书同等的含义和范围内的所有变更。
符号的说明
1复合部件、2基板、20金属、22非金属、3被覆层、30内侧层、31中间层、32最表面层
Claims (4)
1.一种复合部件,包括:
由含有纯镁或镁合金和SiC的复合材料构成的基板;以及
设置在所述基板的表面的被覆层,
所述被覆层具有:
设置在最表面的最表面层;以及
设置在所述最表面层的正下方的中间层,
所述最表面层含有镍和磷,
所述中间层以铜为主要成分,
所述中间层的厚度为30μm以上。
2.根据权利要求1所述的复合部件,其中,
所述被覆层具有设置在所述中间层的正下方的内侧层,
所述内侧层含有镍和磷。
3.根据权利要求1或2所述的复合部件,其中,
所述中间层的厚度为200μm以下。
4.一种散热部件,其由权利要求1至3中任一项所述的复合部件构成。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311508791.4A CN117549616A (zh) | 2019-04-02 | 2020-03-05 | 复合部件和散热部件 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-070853 | 2019-04-02 | ||
JP2019070853 | 2019-04-02 | ||
PCT/JP2020/009414 WO2020203014A1 (ja) | 2019-04-02 | 2020-03-05 | 複合部材、及び放熱部材 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311508791.4A Division CN117549616A (zh) | 2019-04-02 | 2020-03-05 | 复合部件和散热部件 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113795376A true CN113795376A (zh) | 2021-12-14 |
Family
ID=72668627
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311508791.4A Pending CN117549616A (zh) | 2019-04-02 | 2020-03-05 | 复合部件和散热部件 |
CN202080023413.5A Pending CN113795376A (zh) | 2019-04-02 | 2020-03-05 | 复合部件和散热部件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311508791.4A Pending CN117549616A (zh) | 2019-04-02 | 2020-03-05 | 复合部件和散热部件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11890831B2 (zh) |
EP (1) | EP3950316B1 (zh) |
JP (1) | JP7469295B2 (zh) |
CN (2) | CN117549616A (zh) |
WO (1) | WO2020203014A1 (zh) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09320826A (ja) * | 1996-05-27 | 1997-12-12 | Sumitomo Special Metals Co Ltd | 高耐食性希土類磁石 |
JP2002206170A (ja) * | 2000-11-10 | 2002-07-26 | Ngk Insulators Ltd | メッキされた複合材料及びその製造方法 |
JP2002212782A (ja) * | 2000-11-14 | 2002-07-31 | Hitachi Maxell Ltd | 電気メッキ構造及び当該電気メッキ構造を有する配線基板 |
JP2003268478A (ja) * | 2002-03-08 | 2003-09-25 | Hitachi Metals Ltd | Al−SiC系複合体 |
CN1946550A (zh) * | 2004-04-28 | 2007-04-11 | 住友金属工业株式会社 | 散热性优异的涂装钢板 |
JP2010106362A (ja) * | 2008-10-03 | 2010-05-13 | Sumitomo Electric Ind Ltd | 複合部材及びその製造方法 |
CN102170986A (zh) * | 2008-10-03 | 2011-08-31 | 住友电气工业株式会社 | 复合构件 |
JP2012144767A (ja) * | 2011-01-11 | 2012-08-02 | Sumitomo Electric Ind Ltd | 複合部材、放熱部材、半導体装置、及び複合部材の製造方法 |
US20130009301A1 (en) * | 2010-04-02 | 2013-01-10 | A.L.M.T. Corp | Magnesium-based composite member, heat radiation member, and semiconductor device |
CN104085149A (zh) * | 2014-06-18 | 2014-10-08 | 哈尔滨工程大学 | 黄铜-镀层复合物及其制备方法 |
JP2016184700A (ja) * | 2015-03-26 | 2016-10-20 | 株式会社アライドマテリアル | ヒートスプレッダ |
JP2017112277A (ja) * | 2015-12-17 | 2017-06-22 | 三菱マテリアル株式会社 | 接合体、冷却器付きパワーモジュール用基板、冷却器付きパワーモジュール用基板の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5011708A (en) | 1989-06-06 | 1991-04-30 | University Of Virginia Alumni Patents Foundation | Use of radioactive nickel-63 to inhibit microbially induced corrosion |
US6007925A (en) * | 1996-11-25 | 1999-12-28 | Sony Corporation | Electronic apparatus casing and electronic apparatus casing production method |
JP3715743B2 (ja) * | 1997-04-15 | 2005-11-16 | 株式会社神戸製鋼所 | Mg合金部材の製造方法 |
JP3604572B2 (ja) | 1999-01-11 | 2004-12-22 | 株式会社日本製鋼所 | マグネシウム合金部材のめっき方法およびマグネシウム合金めっき部材ならびに該部材のめっき剥離方法 |
JP3371109B2 (ja) | 1999-09-22 | 2003-01-27 | 進造 石川 | マグネシウム合金の防食皮膜 |
JP2003155575A (ja) | 2001-11-16 | 2003-05-30 | Ngk Insulators Ltd | 複合材料及びその製造方法 |
CN1473959A (zh) * | 2002-10-30 | 2004-02-11 | 陈有孝 | 潜艇的表面防腐工艺方法 |
JP2005068445A (ja) * | 2003-08-25 | 2005-03-17 | Dowa Mining Co Ltd | 金属被覆された金属部材 |
US20080136019A1 (en) | 2006-12-11 | 2008-06-12 | Johnson Michael E | Solder Bump/Under Bump Metallurgy Structure for High Temperature Applications |
JP5392465B2 (ja) * | 2008-11-25 | 2014-01-22 | 住友電気工業株式会社 | マグネシウム合金部材 |
US8922464B2 (en) | 2011-05-11 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device and driving method thereof |
CN103733331B (zh) | 2011-07-28 | 2017-03-22 | 电化株式会社 | 半导体元件用散热器件 |
JP2014001439A (ja) | 2012-06-20 | 2014-01-09 | Sumitomo Electric Ind Ltd | 複合部材、複合部材の製造方法、及び半導体装置 |
JP5715678B2 (ja) | 2013-12-11 | 2015-05-13 | 住友電気工業株式会社 | マグネシウム基複合材料 |
JP6370658B2 (ja) | 2014-09-25 | 2018-08-08 | Jx金属株式会社 | 電子部品のNiめっき膜の酸化防止剤、電子部品、および電子部品の製造方法 |
EP3320126A1 (en) | 2015-07-06 | 2018-05-16 | Carbodeon Ltd Oy | Metallic coating and a method for producing the same |
JP2018003105A (ja) | 2016-07-04 | 2018-01-11 | 住友電気工業株式会社 | 複合部材、放熱部材及び半導体装置 |
-
2020
- 2020-03-05 JP JP2021511285A patent/JP7469295B2/ja active Active
- 2020-03-05 US US17/600,298 patent/US11890831B2/en active Active
- 2020-03-05 WO PCT/JP2020/009414 patent/WO2020203014A1/ja unknown
- 2020-03-05 CN CN202311508791.4A patent/CN117549616A/zh active Pending
- 2020-03-05 EP EP20782916.9A patent/EP3950316B1/en active Active
- 2020-03-05 CN CN202080023413.5A patent/CN113795376A/zh active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09320826A (ja) * | 1996-05-27 | 1997-12-12 | Sumitomo Special Metals Co Ltd | 高耐食性希土類磁石 |
JP2002206170A (ja) * | 2000-11-10 | 2002-07-26 | Ngk Insulators Ltd | メッキされた複合材料及びその製造方法 |
JP2002212782A (ja) * | 2000-11-14 | 2002-07-31 | Hitachi Maxell Ltd | 電気メッキ構造及び当該電気メッキ構造を有する配線基板 |
JP2003268478A (ja) * | 2002-03-08 | 2003-09-25 | Hitachi Metals Ltd | Al−SiC系複合体 |
CN1946550A (zh) * | 2004-04-28 | 2007-04-11 | 住友金属工业株式会社 | 散热性优异的涂装钢板 |
JP2010106362A (ja) * | 2008-10-03 | 2010-05-13 | Sumitomo Electric Ind Ltd | 複合部材及びその製造方法 |
CN102170986A (zh) * | 2008-10-03 | 2011-08-31 | 住友电气工业株式会社 | 复合构件 |
US20130009301A1 (en) * | 2010-04-02 | 2013-01-10 | A.L.M.T. Corp | Magnesium-based composite member, heat radiation member, and semiconductor device |
JP2012144767A (ja) * | 2011-01-11 | 2012-08-02 | Sumitomo Electric Ind Ltd | 複合部材、放熱部材、半導体装置、及び複合部材の製造方法 |
CN104085149A (zh) * | 2014-06-18 | 2014-10-08 | 哈尔滨工程大学 | 黄铜-镀层复合物及其制备方法 |
JP2016184700A (ja) * | 2015-03-26 | 2016-10-20 | 株式会社アライドマテリアル | ヒートスプレッダ |
JP2017112277A (ja) * | 2015-12-17 | 2017-06-22 | 三菱マテリアル株式会社 | 接合体、冷却器付きパワーモジュール用基板、冷却器付きパワーモジュール用基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN117549616A (zh) | 2024-02-13 |
EP3950316B1 (en) | 2023-05-10 |
EP3950316A1 (en) | 2022-02-09 |
US11890831B2 (en) | 2024-02-06 |
EP3950316A4 (en) | 2022-05-04 |
JPWO2020203014A1 (zh) | 2020-10-08 |
WO2020203014A1 (ja) | 2020-10-08 |
US20220168995A1 (en) | 2022-06-02 |
JP7469295B2 (ja) | 2024-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4226917A (en) | Composite joint system including composite structure of carbon fibers embedded in copper matrix | |
EP3754038B1 (en) | Composite member and method of manufacturing | |
TWI787330B (zh) | 熱管及熱管的製造方法 | |
WO2020084903A1 (ja) | 複合部材 | |
CN113795376A (zh) | 复合部件和散热部件 | |
EP4026819A1 (en) | Joined body, circuit board, and semiconductor device | |
JP7471015B2 (ja) | 複合材料およびこの複合材料を含む放熱部品 | |
US3721535A (en) | Composite copper alloy | |
JP7196193B2 (ja) | 放熱部材 | |
US20230126268A1 (en) | Composite material and heat dissipation member | |
JPS61166987A (ja) | ラジエ−タ用フイン材 | |
JP7014695B2 (ja) | 導電性材料、成型品及び電子部品 | |
WO2020189689A1 (ja) | アルミニウム基線材 | |
JPS6365748B2 (zh) | ||
JPS6219264B2 (zh) | ||
JP7415287B2 (ja) | アルミニウム基線材、撚り線、及びアルミニウム基線材の製造方法 | |
US20090129969A1 (en) | Wire based on zinc and aluminum and its use in thermal spraying for corrosion protection | |
Meng et al. | Electroless plating and growth kinetics of Ni–P alloy film on SiCp/Al composite with high SiC volume fraction | |
KR102497060B1 (ko) | 도전성 재료, 성형품 및 전자 부품 | |
US20240061016A1 (en) | Strip-shaped composite material for probe needles | |
JP2021197411A (ja) | 板材及び放熱材 | |
WO2018034292A1 (ja) | 熱交換器用のアルミニウム合金製クラッド板 | |
KR20230164796A (ko) | 복합재료 및 이 복합재료를 포함하는 방열부품 | |
JPS59140342A (ja) | リ−ドフレ−ム用銅合金 | |
KR20070030702A (ko) | Lng 기화기용 열전달관, 그의 제조방법 및 그러한열전달관을 이용한 lng 기화기 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |