CN113767478B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

Info

Publication number
CN113767478B
CN113767478B CN202080030293.1A CN202080030293A CN113767478B CN 113767478 B CN113767478 B CN 113767478B CN 202080030293 A CN202080030293 A CN 202080030293A CN 113767478 B CN113767478 B CN 113767478B
Authority
CN
China
Prior art keywords
insulating film
layer
gate electrode
electrode layer
body region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080030293.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN113767478A (zh
Inventor
小田洋平
泽田刚一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN113767478A publication Critical patent/CN113767478A/zh
Application granted granted Critical
Publication of CN113767478B publication Critical patent/CN113767478B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202080030293.1A 2019-04-23 2020-04-22 半导体装置及其制造方法 Active CN113767478B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-082275 2019-04-23
JP2019082275A JP6969586B2 (ja) 2019-04-23 2019-04-23 半導体装置およびその製造方法
PCT/JP2020/017393 WO2020218378A1 (ja) 2019-04-23 2020-04-22 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN113767478A CN113767478A (zh) 2021-12-07
CN113767478B true CN113767478B (zh) 2023-12-05

Family

ID=72942609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080030293.1A Active CN113767478B (zh) 2019-04-23 2020-04-22 半导体装置及其制造方法

Country Status (4)

Country Link
US (1) US12080792B2 (enExample)
JP (1) JP6969586B2 (enExample)
CN (1) CN113767478B (enExample)
WO (1) WO2020218378A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7447703B2 (ja) * 2020-06-26 2024-03-12 株式会社デンソー 半導体装置およびその製造方法
KR102817292B1 (ko) * 2020-11-30 2025-06-05 현대자동차 주식회사 반도체 소자 및 그 제조 방법
JP7526152B2 (ja) * 2021-09-15 2024-07-31 株式会社東芝 半導体装置
CN114242765A (zh) * 2021-11-08 2022-03-25 深圳深爱半导体股份有限公司 半导体器件结构及其制备方法
CN116895691A (zh) * 2023-05-31 2023-10-17 海信家电集团股份有限公司 半导体装置及其制作方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093773A (ja) * 2003-09-18 2005-04-07 Fuji Electric Device Technology Co Ltd トレンチゲート型半導体装置およびその製造方法
JP2005259766A (ja) * 2004-03-09 2005-09-22 Nissan Motor Co Ltd 半導体装置
JP2008218711A (ja) * 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置
JP2012059943A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体装置
JP2013143522A (ja) * 2012-01-12 2013-07-22 Toyota Motor Corp スイッチング素子
CN103545370A (zh) * 2012-07-11 2014-01-29 台湾积体电路制造股份有限公司 用于功率mos晶体管的装置和方法
JP2014216444A (ja) * 2013-04-25 2014-11-17 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
CN105027292A (zh) * 2013-04-11 2015-11-04 富士电机株式会社 半导体装置以及半导体装置的制造方法
WO2016042738A1 (ja) * 2014-09-16 2016-03-24 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2016062981A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置及びその製造方法
JP2017045827A (ja) * 2015-08-26 2017-03-02 株式会社東芝 半導体装置
JP2017084839A (ja) * 2015-10-22 2017-05-18 三菱電機株式会社 半導体装置及びその製造方法
WO2018056357A1 (ja) * 2016-09-21 2018-03-29 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233492A (ja) * 1996-10-31 1998-09-02 Matsushita Electron Corp 半導体装置及びその製造方法
JP4528460B2 (ja) 2000-06-30 2010-08-18 株式会社東芝 半導体素子
JP4753413B2 (ja) * 2005-03-02 2011-08-24 三洋電機株式会社 不揮発性半導体記憶装置及びその製造方法
JP5562917B2 (ja) * 2011-09-16 2014-07-30 株式会社東芝 半導体装置及びその製造方法
JP5609939B2 (ja) * 2011-09-27 2014-10-22 株式会社デンソー 半導体装置
JP5831526B2 (ja) * 2013-01-17 2015-12-09 株式会社デンソー 半導体装置およびその製造方法
JP6154292B2 (ja) * 2013-11-06 2017-06-28 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6914190B2 (ja) * 2015-04-27 2021-08-04 ローム株式会社 半導体装置および半導体装置の製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093773A (ja) * 2003-09-18 2005-04-07 Fuji Electric Device Technology Co Ltd トレンチゲート型半導体装置およびその製造方法
JP2005259766A (ja) * 2004-03-09 2005-09-22 Nissan Motor Co Ltd 半導体装置
JP2008218711A (ja) * 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置
JP2012059943A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体装置
JP2013143522A (ja) * 2012-01-12 2013-07-22 Toyota Motor Corp スイッチング素子
CN103545370A (zh) * 2012-07-11 2014-01-29 台湾积体电路制造股份有限公司 用于功率mos晶体管的装置和方法
CN105027292A (zh) * 2013-04-11 2015-11-04 富士电机株式会社 半导体装置以及半导体装置的制造方法
JP2014216444A (ja) * 2013-04-25 2014-11-17 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
WO2016042738A1 (ja) * 2014-09-16 2016-03-24 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2016062981A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置及びその製造方法
JP2017045827A (ja) * 2015-08-26 2017-03-02 株式会社東芝 半導体装置
JP2017084839A (ja) * 2015-10-22 2017-05-18 三菱電機株式会社 半導体装置及びその製造方法
WO2018056357A1 (ja) * 2016-09-21 2018-03-29 株式会社デンソー 半導体装置およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Plasmonic finite-thickness metal–semiconductor–metal waveguide as ultra-compact modulator;Viktoriia E. Babicheva *, Radu Malureanu, Andrei V. Lavrinenko;Photonics and Nanostructures – Fundamentals and Applications;323-326 *
屏蔽栅MOSFET中间氧化膜工艺优化;周颖;岳丰;;集成电路应用(07);全文 *

Also Published As

Publication number Publication date
WO2020218378A1 (ja) 2020-10-29
US20220037523A1 (en) 2022-02-03
CN113767478A (zh) 2021-12-07
US12080792B2 (en) 2024-09-03
JP6969586B2 (ja) 2021-11-24
JP2020181854A (ja) 2020-11-05

Similar Documents

Publication Publication Date Title
CN113767478B (zh) 半导体装置及其制造方法
US20220165878A1 (en) Semiconductor device
CN113196500B (zh) 半导体装置及其制造方法
US20110260241A1 (en) Semiconductor Power Device Having a Top-side Drain Using a Sinker Trench
US9960237B2 (en) Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
US10971621B2 (en) Semiconductor device
JPH11103056A (ja) 横型ｍｏｓ素子を含む半導体装置
US9041100B2 (en) Semiconductor device, and manufacturing method for same
US20090127617A1 (en) Trench mosfet and manufacturing method thereof
CN102983164A (zh) 半导体器件及其制造方法
US20180076318A1 (en) Semiconductor device and method of manufacturing the same
JP2008501235A (ja) 半導体装置及び製造方法
JP6602698B2 (ja) 半導体装置及びその製造方法
US20200312997A1 (en) Semiconductor device
US20250040222A1 (en) Method of manufacturing semiconductor device
CN115084266B (zh) Ldmos器件及其制造方法
JP7268514B2 (ja) 半導体装置
US20240304680A1 (en) Method of manufacturing semiconductor device
US20230042721A1 (en) Semiconductor device and manufacturing method of semiconductor device
JP2025011470A (ja) 半導体装置
JP2007235084A (ja) 半導体装置およびその製造方法
JP2016054324A (ja) 半導体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant