CN113632232A - 驱动背板及其制备方法、显示面板、显示装置 - Google Patents
驱动背板及其制备方法、显示面板、显示装置 Download PDFInfo
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- CN113632232A CN113632232A CN202080000069.8A CN202080000069A CN113632232A CN 113632232 A CN113632232 A CN 113632232A CN 202080000069 A CN202080000069 A CN 202080000069A CN 113632232 A CN113632232 A CN 113632232A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
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- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一种驱动背板及其制备方法、显示面板、显示装置，目的是改善TPV驱动背板结构，提高TPV驱动背板良率。驱动背板包括:柔性衬底(1)，设有第一过孔(11)；第一钝化层(21)，位于柔性衬底(1)一侧，设有第二过孔(211)，第二过孔(211)的正投影与第一过孔(11)的正投影至少部分重叠；薄膜晶体管(3)，位于柔性衬底(1)背离第一钝化层(21)的一侧；电连接结构，包括信号走线和连接端子(41)；连接端子(41)位于柔性衬底(1)靠近第一钝化层(21)的一侧，包括位于柔性衬底(1)和第一钝化层(21)之间的第一部分(411)以及位于第二过孔(211)内的第二部分(412)，且第二过孔(211)的正投影位于连接端子(41)的正投影内；信号走线位于柔性衬底(1)背离第一钝化层(21)的一侧，与薄膜晶体管(3)电连接、且通过第一过孔(11)与连接端子(41)电连接。
Description
PCT国内申请，说明书已公开。
Claims (17)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/073910 WO2021147039A1 (zh) | 2020-01-22 | 2020-01-22 | 驱动背板及其制备方法、显示面板、显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113632232A true CN113632232A (zh) | 2021-11-09 |
Family
ID=76992823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080000069.8A Pending CN113632232A (zh) | 2020-01-22 | 2020-01-22 | 驱动背板及其制备方法、显示面板、显示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20220115572A1 (zh) |
| EP (1) | EP4095911A4 (zh) |
| CN (1) | CN113632232A (zh) |
| WO (1) | WO2021147039A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023097779A1 (zh) * | 2021-11-30 | 2023-06-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板和显示装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220007754A (ko) * | 2020-07-09 | 2022-01-19 | 삼성디스플레이 주식회사 | 표시 장치 및 이를 포함하는 타일형 표시 장치 |
| CN116096168A (zh) * | 2021-11-02 | 2023-05-09 | 武汉华星光电半导体显示技术有限公司 | 显示面板和显示装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840925A (zh) * | 2009-03-19 | 2010-09-22 | 索尼公司 | 半导体装置及其制造方法和电子设备 |
| US20120074422A1 (en) * | 2010-09-21 | 2012-03-29 | Panasonic Liquid Crystal Display Co., Ltd. | Thin-film transistor array device, el display panel, el display device, thin-film transistor array device manufacturing method, el display panel manufacturing method |
| US20150187807A1 (en) * | 2013-12-26 | 2015-07-02 | Japan Display Inc. | Display device |
| US20170141238A1 (en) * | 2015-05-14 | 2017-05-18 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Esl tft substrate structure and manufacturing method thereof |
| CN109585462A (zh) * | 2019-01-23 | 2019-04-05 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、柔性显示面板、拼接屏 |
| CN110010627A (zh) * | 2019-04-12 | 2019-07-12 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| CN110473835A (zh) * | 2019-08-30 | 2019-11-19 | 上海中航光电子有限公司 | 一种显示面板及其制备方法、显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002040472A (ja) * | 2000-07-31 | 2002-02-06 | Seiko Epson Corp | 液晶装置の製造方法および液晶装置と電子機器 |
| US9349758B2 (en) * | 2014-09-30 | 2016-05-24 | Lg Display Co., Ltd. | Flexible display device with divided power lines and manufacturing method for the same |
| CN104851892A (zh) * | 2015-05-12 | 2015-08-19 | 深圳市华星光电技术有限公司 | 窄边框柔性显示装置及其制作方法 |
| CN109559643A (zh) * | 2017-09-26 | 2019-04-02 | 上海和辉光电有限公司 | 一种显示面板 |
| CN108535928A (zh) * | 2018-04-13 | 2018-09-14 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板和显示装置 |
| CN109638178A (zh) * | 2018-12-05 | 2019-04-16 | 武汉华星光电半导体显示技术有限公司 | 显示器结构及制造方法 |
| CN109817659B (zh) * | 2019-02-15 | 2021-08-06 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
| CN109887948B (zh) * | 2019-03-08 | 2021-11-09 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| CN109904080B (zh) * | 2019-03-20 | 2020-10-02 | 北京京东方显示技术有限公司 | 一种驱动背板及其制作方法、显示装置 |
-
2020
- 2020-01-22 EP EP20864304.9A patent/EP4095911A4/en active Pending
- 2020-01-22 US US17/280,387 patent/US20220115572A1/en active Pending
- 2020-01-22 WO PCT/CN2020/073910 patent/WO2021147039A1/zh unknown
- 2020-01-22 CN CN202080000069.8A patent/CN113632232A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840925A (zh) * | 2009-03-19 | 2010-09-22 | 索尼公司 | 半导体装置及其制造方法和电子设备 |
| US20120074422A1 (en) * | 2010-09-21 | 2012-03-29 | Panasonic Liquid Crystal Display Co., Ltd. | Thin-film transistor array device, el display panel, el display device, thin-film transistor array device manufacturing method, el display panel manufacturing method |
| US20150187807A1 (en) * | 2013-12-26 | 2015-07-02 | Japan Display Inc. | Display device |
| US20170141238A1 (en) * | 2015-05-14 | 2017-05-18 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Esl tft substrate structure and manufacturing method thereof |
| CN109585462A (zh) * | 2019-01-23 | 2019-04-05 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、柔性显示面板、拼接屏 |
| CN110010627A (zh) * | 2019-04-12 | 2019-07-12 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| CN110473835A (zh) * | 2019-08-30 | 2019-11-19 | 上海中航光电子有限公司 | 一种显示面板及其制备方法、显示装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023097779A1 (zh) * | 2021-11-30 | 2023-06-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板和显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220115572A1 (en) | 2022-04-14 |
| EP4095911A1 (en) | 2022-11-30 |
| WO2021147039A1 (zh) | 2021-07-29 |
| EP4095911A4 (en) | 2023-10-25 |
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