CN113614261A - 电路衬底及具备它的散热衬底或电子设备 - Google Patents

电路衬底及具备它的散热衬底或电子设备 Download PDF

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Publication number
CN113614261A
CN113614261A CN202080022980.9A CN202080022980A CN113614261A CN 113614261 A CN113614261 A CN 113614261A CN 202080022980 A CN202080022980 A CN 202080022980A CN 113614261 A CN113614261 A CN 113614261A
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China
Prior art keywords
substrate
aluminum
bonding layer
metal layer
layer
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Pending
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CN202080022980.9A
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English (en)
Chinese (zh)
Inventor
阿部裕一
宗石猛
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Kyocera Corp
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Kyocera Corp
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Publication of CN113614261A publication Critical patent/CN113614261A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950°C
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)
CN202080022980.9A 2019-03-25 2020-03-24 电路衬底及具备它的散热衬底或电子设备 Pending CN113614261A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019056841 2019-03-25
JP2019-056841 2019-03-25
PCT/JP2020/013039 WO2020196528A1 (ja) 2019-03-25 2020-03-24 回路基体およびこれを備える放熱基体または電子装置

Publications (1)

Publication Number Publication Date
CN113614261A true CN113614261A (zh) 2021-11-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080022980.9A Pending CN113614261A (zh) 2019-03-25 2020-03-24 电路衬底及具备它的散热衬底或电子设备

Country Status (4)

Country Link
US (1) US12381120B2 (https=)
JP (1) JP7122461B2 (https=)
CN (1) CN113614261A (https=)
WO (1) WO2020196528A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7635360B2 (ja) * 2021-02-26 2025-02-25 京セラ株式会社 熱デバイス

Citations (15)

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US6107638A (en) * 1997-03-14 2000-08-22 Kabushiki Kaisha Toshiba Silicon nitride circuit substrate and semiconductor device containing same
CN101308783A (zh) * 2007-05-18 2008-11-19 株式会社半导体能源研究所 半导体衬底、半导体装置、以及其制造方法
WO2011111989A2 (ko) * 2010-03-09 2011-09-15 주식회사 케이씨씨 금속접합 세라믹기판
CN102593009A (zh) * 2011-01-11 2012-07-18 三菱综合材料株式会社 电源模块用基板的制造方法、电源模块用基板和电源模块
CN103282546A (zh) * 2010-11-19 2013-09-04 日本发条株式会社 层叠体和层叠体的制造方法
CN103648766A (zh) * 2011-07-11 2014-03-19 日本发条株式会社 层叠体和层叠体的制造方法
CN104067386A (zh) * 2012-02-01 2014-09-24 三菱综合材料株式会社 功率模块用基板、自带散热器的功率模块用基板、功率模块、功率模块用基板的制造方法以及铜部件接合用浆料
CN104205325A (zh) * 2012-03-30 2014-12-10 三菱综合材料株式会社 自带散热器的功率模块用基板、自带冷却器的功率模块用基板以及功率模块
CN105189109A (zh) * 2013-03-14 2015-12-23 三菱综合材料株式会社 接合体、功率模块用基板及自带散热器的功率模块用基板
CN106663663A (zh) * 2014-08-26 2017-05-10 三菱综合材料株式会社 接合体及其制造方法、自带散热器的功率模块用基板及其制造方法、散热器及其制造方法
JP2017135197A (ja) * 2016-01-26 2017-08-03 京セラ株式会社 回路基板
CN107112298A (zh) * 2014-10-16 2017-08-29 三菱综合材料株式会社 附带冷却器的功率模块用基板及其制造方法
CN108292632A (zh) * 2015-11-26 2018-07-17 三菱综合材料株式会社 陶瓷-铝接合体、绝缘电路基板、功率模块、led模块、热电模块
CN108682659A (zh) * 2018-05-16 2018-10-19 江苏芯澄半导体有限公司 一种用于新能源汽车的宽禁带半导体碳化硅功率器件封装结构
CN109417056A (zh) * 2016-06-30 2019-03-01 三菱综合材料株式会社 铜-陶瓷接合体及绝缘电路基板

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JP3907818B2 (ja) 1997-03-14 2007-04-18 株式会社東芝 窒化珪素回路基板、半導体装置及び窒化珪素回路基板の製造方法
US6528123B1 (en) * 2000-06-28 2003-03-04 Sandia Corporation Coating system to permit direct brazing of ceramics
KR20110033117A (ko) 2008-06-06 2011-03-30 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판, 파워 모듈, 및 파워 모듈용 기판의 제조 방법
JP5423076B2 (ja) 2008-06-06 2014-02-19 三菱マテリアル株式会社 パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP5743503B2 (ja) 2010-11-29 2015-07-01 京セラ株式会社 ろう材およびこれを用いた回路基板ならびに電子装置
JP6085968B2 (ja) * 2012-12-27 2017-03-01 三菱マテリアル株式会社 金属部材付パワーモジュール用基板、金属部材付パワーモジュール、及び金属部材付パワーモジュール用基板の製造方法

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107638A (en) * 1997-03-14 2000-08-22 Kabushiki Kaisha Toshiba Silicon nitride circuit substrate and semiconductor device containing same
CN101308783A (zh) * 2007-05-18 2008-11-19 株式会社半导体能源研究所 半导体衬底、半导体装置、以及其制造方法
WO2011111989A2 (ko) * 2010-03-09 2011-09-15 주식회사 케이씨씨 금속접합 세라믹기판
CN103282546A (zh) * 2010-11-19 2013-09-04 日本发条株式会社 层叠体和层叠体的制造方法
CN102593009A (zh) * 2011-01-11 2012-07-18 三菱综合材料株式会社 电源模块用基板的制造方法、电源模块用基板和电源模块
CN103648766A (zh) * 2011-07-11 2014-03-19 日本发条株式会社 层叠体和层叠体的制造方法
CN104067386A (zh) * 2012-02-01 2014-09-24 三菱综合材料株式会社 功率模块用基板、自带散热器的功率模块用基板、功率模块、功率模块用基板的制造方法以及铜部件接合用浆料
CN104205325A (zh) * 2012-03-30 2014-12-10 三菱综合材料株式会社 自带散热器的功率模块用基板、自带冷却器的功率模块用基板以及功率模块
CN105189109A (zh) * 2013-03-14 2015-12-23 三菱综合材料株式会社 接合体、功率模块用基板及自带散热器的功率模块用基板
CN106663663A (zh) * 2014-08-26 2017-05-10 三菱综合材料株式会社 接合体及其制造方法、自带散热器的功率模块用基板及其制造方法、散热器及其制造方法
CN107112298A (zh) * 2014-10-16 2017-08-29 三菱综合材料株式会社 附带冷却器的功率模块用基板及其制造方法
CN108292632A (zh) * 2015-11-26 2018-07-17 三菱综合材料株式会社 陶瓷-铝接合体、绝缘电路基板、功率模块、led模块、热电模块
JP2017135197A (ja) * 2016-01-26 2017-08-03 京セラ株式会社 回路基板
CN109417056A (zh) * 2016-06-30 2019-03-01 三菱综合材料株式会社 铜-陶瓷接合体及绝缘电路基板
CN108682659A (zh) * 2018-05-16 2018-10-19 江苏芯澄半导体有限公司 一种用于新能源汽车的宽禁带半导体碳化硅功率器件封装结构

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JP7122461B2 (ja) 2022-08-19
US12381120B2 (en) 2025-08-05
JPWO2020196528A1 (https=) 2020-10-01
WO2020196528A1 (ja) 2020-10-01

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Application publication date: 20211105