WO2020196528A1 - 回路基体およびこれを備える放熱基体または電子装置 - Google Patents

回路基体およびこれを備える放熱基体または電子装置 Download PDF

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Publication number
WO2020196528A1
WO2020196528A1 PCT/JP2020/013039 JP2020013039W WO2020196528A1 WO 2020196528 A1 WO2020196528 A1 WO 2020196528A1 JP 2020013039 W JP2020013039 W JP 2020013039W WO 2020196528 A1 WO2020196528 A1 WO 2020196528A1
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WIPO (PCT)
Prior art keywords
substrate
aluminum
bonding layer
circuit substrate
metal layer
Prior art date
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Ceased
Application number
PCT/JP2020/013039
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English (en)
French (fr)
Japanese (ja)
Inventor
阿部　裕一
猛 宗石
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Kyocera Corp
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Kyocera Corp
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Publication date
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Priority to US17/442,534 priority Critical patent/US12381120B2/en
Priority to CN202080022980.9A priority patent/CN113614261A/zh
Priority to JP2021509454A priority patent/JP7122461B2/ja
Publication of WO2020196528A1 publication Critical patent/WO2020196528A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950°C
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses

Definitions

  • the present disclosure relates to a circuit substrate and a heat dissipation substrate or an electronic device including the circuit substrate.
  • the circuit substrate used in such an application includes a substrate and a metal layer made of copper having excellent heat dissipation, which is located on the substrate.
  • ceramics having excellent insulating properties and mechanical strength are used for the substrate.
  • a brazing material containing silver and copper as main components is used (see, for example, Patent Document 1).
  • the circuit substrate of the present disclosure includes a substrate made of ceramics, a bonding layer located on the substrate, and a metal layer located on the bonding layer.
  • the metal layer also contains copper.
  • the bonding layer also contains aluminum, silicon and oxygen.
  • the circuit substrate of the present disclosure can withstand long-term use, in which cracks are unlikely to occur in the bonding layer even when heating and cooling are repeated.
  • the circuit substrate 10 of the first embodiment of the present disclosure includes a substrate 1, a bonding layer 2 located on the substrate 1, and a metal layer 3 located on the bonding layer 2. ..
  • the substrate 1 is made of ceramics.
  • ceramics containing aluminum or silicon such as silicon carbide ceramics, aluminum oxide ceramics, zirconium oxide-containing aluminum oxide ceramics, silicon nitride ceramics or aluminum nitride ceramics can be used.
  • the thermal conductivity is high, so that the heat dissipation of the circuit substrate 10 of the first embodiment is improved.
  • the silicon nitride ceramics are those in which silicon nitride accounts for 70% by mass or more of 100% by mass of all the components constituting the silicon nitride ceramics.
  • the aluminum oxide ceramics are those in which aluminum oxide accounts for 70% by mass among all the components constituting the aluminum oxide ceramics.
  • the aluminum nitride ceramics are those in which aluminum nitride accounts for 70% by mass or more of all the components constituting the aluminum nitride ceramics.
  • the material of the substrate 1 can be confirmed by the following method.
  • the constituent components of the target substrate are identified by measuring with an X-ray diffractometer (XRD) and identifying the obtained 2 ⁇ (2 ⁇ is a diffraction angle) value with a JCPDS card.
  • XRD X-ray diffractometer
  • a quantitative analysis of the target substrate is performed using an ICP (Inductively Coupled Plasma) emission spectroscopic analyzer (ICP).
  • ICP Inductively Coupled Plasma
  • the constituent component identified by XRD is silicon nitride and the value converted from the silicon (Si) content measured by ICP into silicon nitride (Si 3 N 4 ) is 70% by mass or more, nitriding is performed. Silicone ceramics. The same applies to other ceramics.
  • the metal layer 3 in the circuit substrate 10 of the first embodiment of the present disclosure contains copper. Since the metal layer 3 contains copper having a high thermal conductivity, the circuit substrate 10 of the first embodiment of the present disclosure has excellent heat dissipation. Further, the metal layer 3 may contain 90% by mass or more of copper out of 100% by mass of all the constituent components, for example. Since most of the metal layer 3 is made of copper having high thermal conductivity, the circuit substrate 10 of the first embodiment of the present disclosure is excellent in heat dissipation.
  • the average thickness of the metal layer 3 may be, for example, 100 ⁇ m or more and 3000 ⁇ m or less.
  • the bonding layer 2 in the circuit substrate 10 of the first embodiment of the present disclosure contains aluminum, silicon and oxygen. Further, in the bonding layer 2, for example, the total of aluminum, silicon and oxygen may be 95% by mass or more in 100% by mass of all the constituent components.
  • aluminum is 70% by mass or more and 85% by mass or less
  • silicon is 4% by mass or more and 15% by mass or less
  • oxygen is contained in 100% by mass of all the components constituting the bonding layer 2. It may be 5% by mass or more and 15% by mass or less.
  • the substrate 1 made of ceramics and the metal layer 3 containing copper can be firmly bonded via the bonding layer 2.
  • the bonding layer 2 in the circuit substrate 10 of the second embodiment of the present disclosure may have a first region 2a and a second region 2b as shown in FIG.
  • the first region 2a is mainly in contact with the metal layer 3, and the second region 2b is in contact with the substrate 1.
  • the first region 2a has aluminum or an aluminum alloy.
  • the aluminum alloy has silicon.
  • the second region 2b may have aluminum silicide.
  • Aluminum silicide has a high affinity with aluminum or an aluminum alloy. Therefore, the first region 2a and the second region 2b are likely to be firmly joined.
  • the second region 2b may have a sialon.
  • Sialon has a high affinity for aluminum or aluminum alloys. Therefore, the first region 2a and the second region 2b are likely to be firmly joined.
  • the affinity of the substrate 1 with aluminum or silicon is high. Therefore, the second region and the substrate are likely to be firmly bonded. Therefore, the substrate 1 and the bonding layer 2 are easily bonded firmly.
  • the second region 2b is aluminum silicide
  • the affinity with the substrate 1 made of aluminum oxide ceramics is high. Therefore, the second region and the substrate are likely to be firmly bonded. Therefore, the substrate 1 and the bonding layer 2 are easily bonded firmly.
  • the second region 2b is Sialon, it has a high affinity with the substrate 1 made of silicon nitride ceramics or aluminum nitride ceramics. Therefore, the second region and the substrate are likely to be firmly bonded. Therefore, the substrate 1 and the bonding layer 2 are easily bonded firmly.
  • the circuit substrate 10 of the second embodiment of the present disclosure can withstand use for a long period of time.
  • the second region 2b of the bonding layer 2 may be in a layered shape sandwiched between the second region 2a and the base 1 as shown in the circuit base 10 of FIG. 3 as the third embodiment.
  • the average thickness of the bonding layer 2 may be, for example, 5 ⁇ m or more and 40 ⁇ m or less.
  • the components constituting the bonding layer 2 and the metal layer 3 and their contents may be confirmed by the following methods.
  • the circuit substrate 10 of the second or third embodiment of the present disclosure is cut and polished using a cross section polisher (CP) so as to have a cross-sectional shape as shown in FIG. 2 or 3.
  • CP cross section polisher
  • EDS energy dispersive X-ray analyzer
  • SEM scanning electron microscope
  • the bonding layer 2 and the metal layer 3 may be scraped off, respectively, and the components constituting the bonding layer 2 and the metal layer 3 and their contents may be measured using an ICP or a fluorescent X-ray analyzer (XRF).
  • ICP cross section polisher
  • XRF fluorescent X-ray analyzer
  • the second region 2b of the bonding layer 2 is sialone or aluminum silicide
  • aluminum silicide is provided.
  • silicon, aluminum, oxygen, and nitrogen are present in the same state, it is considered to have silaron.
  • the circuit substrate 10 of the fourth embodiment of the present disclosure includes an intermediate layer 4 between the bonding layer 2 and the metal layer 3, and the intermediate layer 4 is made of titanium, tungsten, or the like. It may contain molybdenum.
  • the intermediate layer 4 easily suppresses the diffusion of aluminum in the first region 2a of the bonding layer 2 to the metal layer 3. Moreover, the strength of the bonding layer 2 can be maintained. Further, the affinity between the aluminum alloy in the first region 2a of the bonding layer 2 and the intermediate layer 4 enables the substrate 1 and the metal layer 3 to be bonded more firmly. Therefore, even if heating and cooling are repeated, cracks are unlikely to occur in the bonding layer 2.
  • the total of titanium, tungsten and molybdenum may be 50% by mass or more in 100% by mass of all the constituent components.
  • the average thickness of the intermediate layer 4 may be, for example, 0.5 ⁇ m or more and 5 ⁇ m or less.
  • the intermediate layer 4 surface analysis is performed using an electron probe microanalyzer (EPMA) with the above-mentioned polished surface as the observation surface, and in the color mapping of the surface analysis, the titanium, tungsten, or molybdenum layer is found. It may be judged whether or not it exists. Further, the content of the components constituting the intermediate layer 4 may be measured by using the EDS attached to the SEM with the above-mentioned polished surface as an observation surface.
  • EPMA electron probe microanalyzer
  • the titanium contained in the intermediate layer 4 in the circuit substrate 10 of the fourth embodiment of the present disclosure may exist as a hydride, an oxide, a nitride, a carbide, or a carbonitride. If such a configuration is satisfied, even if heating and cooling are repeated, the aluminum in the first region 2a of the bonding layer 2 can be further suppressed from diffusing into the metal layer 3, and the bonding layer 2 can be further suppressed. The strength can be maintained more. Further, the affinity between the aluminum alloy in the first region 2a of the bonding layer 2 and the intermediate layer 4 allows the substrate 1 and the metal layer 3 to be bonded more firmly, so that the bonding layer can be bonded even if heating and cooling are repeated. Cracks are less likely to occur in 2.
  • titanium may be 50% by mass or more out of 100% by mass of all the constituent components.
  • hydride, oxide, nitride, carbide or carbonitride is present in the titanium contained in the intermediate layer 4 may be confirmed by the following method.
  • a surface analysis is performed using EPMA with the above-mentioned polished surface as an observation surface. Then, when a place where titanium and oxygen are present at the same time is confirmed in the color mapping of the surface analysis, it is considered that the oxide is present. In addition, when a place where titanium and nitrogen are present at the same time is confirmed in the color mapping of the surface analysis, it is considered that the nitride is present. In addition, when it is confirmed that titanium and carbon are present at the same time in the color mapping of the surface analysis, it is considered that carbides are present.
  • the presence of the hydride may be confirmed by cutting out the intermediate layer and using secondary ion mass spectrometry (SIMS).
  • fins 5 may be provided on the base 1 as shown in FIG.
  • the fin 5 may be provided on the substrate 1 on the side opposite to the bonding layer 2.
  • the fin 5 may be made of, for example, aluminum. As described above, since the fin 5 is made of aluminum having high thermal conductivity, the heat dissipation can be further improved by providing the fin 5.
  • the bonding layer 2 may be located between the substrate 1 and the fins 5.
  • the bonding layer 2 of the circuit substrate 10 of the present disclosure may have a first region 2a and a second region 2b as shown in FIG. 2 or FIG.
  • the substrate 1 in the circuit substrate 10 of the present disclosure may be provided with a flow path inside. If such a configuration is satisfied, the electronic components on the metal layer 3 can be effectively cooled by flowing a cooling fluid (hereinafter, referred to as a refrigerant) in the flow path.
  • a cooling fluid hereinafter, referred to as a refrigerant
  • the flow path may have any shape and size.
  • the heat dissipation base 20 of the present disclosure constitutes a flow path 7 by the circuit base 10 and the member 6.
  • the member 6 is made of aluminum or an aluminum alloy. Since the heat radiating member 20 of the present disclosure satisfies such a configuration, it is lighter in weight and excellent in heat radiating property as compared with the case where the member is made of ceramics or the like. The electronic components on the metal layer 3 can be effectively cooled.
  • the bonding layer 2 may be located between the substrate 1 of the circuit substrate 10 and the member 5. If such a configuration is satisfied, the substrate 1 made of ceramics and the member 5 made of aluminum or an aluminum alloy are firmly bonded to each other, and the heat dissipation substrate 20 of the present disclosure is suitable for long-term use.
  • the electronic device of the present disclosure includes an electronic component located on the metal layer 3 in the circuit base 10.
  • it includes an electronic component located on the metal layer 3 in the circuit substrate 10 of the heat dissipation substrate 20.
  • examples of the electronic component include a light emitting diode (LED) element, a laser diode (LD) element, an insulated gate bipolar transistor (IGBT) element, an intelligent power module (IPM) element, and a metal oxide film type electric field.
  • LED light emitting diode
  • LD laser diode
  • IPM intelligent power module
  • MOSFET Effect Transistor
  • FWD freewheeling diode
  • GTR giant transistor
  • SBD Schottky barrier diode
  • HEMT high electron mobile transistor
  • a semiconductor element such as CMOS
  • a heat generating element for a sublimation type thermal printer head or a thermal inkjet printer head a Pelche element, or the like can be used.
  • a substrate made of ceramics is prepared by a known method.
  • a substrate can be produced by producing a molded body by extruding a ceramic raw material into clay or laminating it in the form of a tape and firing it.
  • the substrate may have a flow path inside.
  • a metal layer containing 90% by mass or more of copper prepare a metal layer containing 90% by mass or more of copper.
  • an alkoxide-based or chelate-based solvent containing a compound of titanium, molybdenum or tungsten is used.
  • An intermediate layer is formed in advance on the metal layer by applying it to the metal layer by screen printing, brush coating, inkjet coating, bar coater or spray, and heat-treating at a temperature of 150 ° C. or higher and 650 ° C. or lower for 15 minutes or longer. ..
  • screen printing it becomes easy to make the intermediate layer an arbitrary thickness.
  • a solvent containing a compound of titanium, molybdenum or tungsten which is an alkoxide type or a chelate type, it is possible to form a film quality uniformly and quickly even if the area of the intermediate layer is large. is there.
  • it may be formed by sputtering, vapor deposition, ion plating, plating, film formation or the like.
  • the following method can be used to include titanium hydride, titanium oxide, titanium nitride, titanium carbide, or titanium carbonitride in the intermediate layer.
  • the temperature is 550 ° C or lower in a hydrogen gas atmosphere. Perform heat treatment.
  • a titanium-containing layer is formed by printing a solvent containing titanium, and then heat treatment is performed at 500 ° C. or higher and 650 ° C. or lower in an inert gas atmosphere.
  • the temperature is 500 ° C. or higher and 650 ° C. or higher in a nitrogen atmosphere. Perform heat treatment below ° C.
  • titanium carbonitride after forming a titanium-containing layer by printing a solvent containing titanium, heat treatment is performed at 500 ° C. or higher and 650 ° C. or lower in a nitrogen atmosphere.
  • titanium carbide after forming a titanium-containing layer by printing a solvent containing titanium, heat treatment at 500 ° C. or higher and 650 ° C. or lower is performed in either an inert gas atmosphere or a nitrogen atmosphere. Good.
  • solvent containing titanium an alkoxide-based solvent, a chelate-based solvent, or the like can be used.
  • the blending ratio of siloxane and aluminum should be such that the total of aluminum, silicon and oxygen out of 100% by mass of all the components constituting the bonding layer is 95% by mass or more after the heat treatment at the time of bonding described later. Just do it.
  • aluminum may be a fragment-like powder.
  • aluminum spreads over a wide range, so that a bonding layer can be efficiently formed. In particular, it becomes easy to form the second region 2b.
  • the thickness of the fragment-shaped aluminum may be, for example, 1 ⁇ m or more and 5 ⁇ m or less.
  • the outer diameter of the fragment-shaped aluminum may be, for example, 10 ⁇ m or more and 20 ⁇ m or less.
  • the bonding layer is applied to one of the bonding surfaces of the substrate or the metal layer (intermediate layer if the metal layer has an intermediate layer). Apply the paste that becomes.
  • screen printing it becomes easy to make the bonding layer an arbitrary thickness.
  • heat treatment is performed in a vacuum of 1 ⁇ 10 -1 Pa or less at a temperature of 560 ° C. or higher and 700 ° C. or lower for 15 minutes or longer.
  • the Si—O—Si group in the siloxane reacts with aluminum to form an aluminum alloy.
  • the surface side of the substrate is decomposed to form a compound such as aluminum silicide or sialon.
  • the substrate is aluminum oxide ceramics
  • aluminum silicide is formed.
  • sialon is formed.
  • a bonding layer having VDD or Sialon is formed.
  • Silicide or Sialon has a high affinity for aluminum and silicon contained in the substrate. Therefore, the bonding layer can firmly bond the substrate and the metal layer. As a result, the circuit substrate of the present disclosure is obtained.
  • the intermediate layer has titanium nitride
  • the Si—O—Si group in the siloxane reacts with aluminum by the heat treatment, and the formed melt containing the aluminum alloy and the titanium nitride become wettable. Therefore, no vacancies are generated, and the joint can be made more firmly.
  • the intermediate layer may have titanium, tungsten, molybdenum, titanium hydride, titanium oxide, and titanium carbide.
  • the electronic device of the present disclosure is obtained.
  • Base 2 Bonding layer 2a: First region 2b: Second region 3: Metal layer 4: Intermediate layer 5: Fins 6: Member 7: Flow path 10: Circuit base 20: Heat dissipation base

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)
PCT/JP2020/013039 2019-03-25 2020-03-24 回路基体およびこれを備える放熱基体または電子装置 Ceased WO2020196528A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17/442,534 US12381120B2 (en) 2019-03-25 2020-03-24 Circuit base, and heat dissipation base or electronic device provided with same
CN202080022980.9A CN113614261A (zh) 2019-03-25 2020-03-24 电路衬底及具备它的散热衬底或电子设备
JP2021509454A JP7122461B2 (ja) 2019-03-25 2020-03-24 回路基体およびこれを備える放熱基体または電子装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019056841 2019-03-25
JP2019-056841 2019-03-25

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WO2020196528A1 true WO2020196528A1 (ja) 2020-10-01

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US (1) US12381120B2 (https=)
JP (1) JP7122461B2 (https=)
CN (1) CN113614261A (https=)
WO (1) WO2020196528A1 (https=)

Cited By (1)

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WO2022181566A1 (ja) * 2021-02-26 2022-09-01 京セラ株式会社 熱デバイス

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