CN113508528A - 一种芯片、信号位移电路及电子设备 - Google Patents

一种芯片、信号位移电路及电子设备 Download PDF

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Publication number
CN113508528A
CN113508528A CN201980093562.6A CN201980093562A CN113508528A CN 113508528 A CN113508528 A CN 113508528A CN 201980093562 A CN201980093562 A CN 201980093562A CN 113508528 A CN113508528 A CN 113508528A
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voltage
silicon
circuit
gallium nitride
voltage mos
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CN201980093562.6A
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蒋其梦
彭兴强
孙程豪
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

本申请公开了一种芯片及信号位移电路，应用于充电器或适配器等移动终端上，该芯片合封有采用硅基工艺制作的第一硅基驱动裸片和第二硅基驱动裸片，以及采用氮化镓工艺制作的第一氮化镓裸片和第二氮化镓裸片，第一硅基驱动裸片与控制器的两个输出端连接，第一硅基驱动裸片上集成有第一硅基电路，第二硅基驱动裸片集成有第二硅基电路，第一氮化镓裸片上集成有氮化镓电路，氮化镓电路耐高压，第一硅基电路接收控制器输出的脉冲信号HI，并将HI传递到氮化镓电路；氮化镓电路分担第二硅基电路的输入电压VB，并将HI传递到第二硅基电路。这样可以确保采用低压硅基工艺制作的低压第二硅基驱动裸片不被高输入电压损坏，从而降低了芯片的成本。

Description

PCT国内申请，说明书已公开。

Claims (20)

  1. PCT国内申请，权利要求书已公开。
CN201980093562.6A 2019-03-07 2019-12-30 一种芯片、信号位移电路及电子设备 Pending CN113508528A (zh)

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CN2019101720267 2019-03-07
CN201910172026.7A CN109951183B (zh) 2019-03-07 2019-03-07 一种芯片、信号位移电路及电子设备
PCT/CN2019/129783 WO2020177466A1 (zh) 2019-03-07 2019-12-30 一种芯片、信号位移电路及电子设备

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EP (1) EP3926830B1 (zh)
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Publication number Priority date Publication date Assignee Title
CN109951183B (zh) * 2019-03-07 2020-12-25 华为技术有限公司 一种芯片、信号位移电路及电子设备
CN114783993A (zh) * 2022-05-18 2022-07-22 东科半导体(安徽)股份有限公司 合封氮化镓功率器件的半桥拓扑集成方法和芯片

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006191741A (ja) * 2005-01-06 2006-07-20 Sanken Electric Co Ltd 直流変換装置
JP4531075B2 (ja) * 2007-05-16 2010-08-25 株式会社日立製作所 半導体回路
JP5334189B2 (ja) * 2009-08-26 2013-11-06 シャープ株式会社 半導体装置および電子機器
JP5719446B2 (ja) * 2011-09-30 2015-05-20 シャープ株式会社 レベルシフト回路
US8593211B2 (en) * 2012-03-16 2013-11-26 Texas Instruments Incorporated System and apparatus for driver circuit for protection of gates of GaN FETs
US9111764B2 (en) * 2012-07-13 2015-08-18 Infineon Technologies Ag Integrated semiconductor device and a bridge circuit with the integrated semiconductor device
US8791723B2 (en) * 2012-08-17 2014-07-29 Alpha And Omega Semiconductor Incorporated Three-dimensional high voltage gate driver integrated circuit
JP6247299B2 (ja) * 2013-08-01 2017-12-13 株式会社日立製作所 半導体装置及び電力変換装置
JP6088936B2 (ja) * 2013-08-07 2017-03-01 ルネサスエレクトロニクス株式会社 レベルシフタ
US9537478B2 (en) * 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6320875B2 (ja) * 2014-08-25 2018-05-09 ルネサスエレクトロニクス株式会社 半導体装置、電力制御装置および電子システム
US9537338B2 (en) * 2014-09-16 2017-01-03 Navitas Semiconductor Inc. Level shift and inverter circuits for GaN devices
US9571093B2 (en) * 2014-09-16 2017-02-14 Navitas Semiconductor, Inc. Half bridge driver circuits
US9640471B2 (en) * 2015-02-24 2017-05-02 Navitas Semiconductor Inc. Leadless electronic packages for GaN devices
US9484897B2 (en) * 2015-03-18 2016-11-01 Peregrine Semiconductor Corporation Level shifter
WO2016181597A1 (ja) * 2015-05-13 2016-11-17 パナソニックＩｐマネジメント株式会社 駆動回路、スイッチング制御回路およびスイッチング装置
JP6719242B2 (ja) * 2016-03-23 2020-07-08 エイブリック株式会社 レベルシフト回路
US10601300B2 (en) * 2017-05-19 2020-03-24 Efficient Power Conversion Corporation Integrated gallium nitride based DC-DC converter
CN108736702A (zh) * 2018-06-08 2018-11-02 邯郸美的制冷设备有限公司 图腾柱无桥pfc电路、电源转换装置及空调器
CN108616269B (zh) * 2018-07-27 2023-12-29 无锡安趋电子有限公司 一种低工作电压的下行电平移位电路
CN109004820B (zh) * 2018-08-08 2020-02-04 电子科技大学 适用于GaN功率器件高速栅驱动的开关自举充电电路
CN109088532B (zh) * 2018-09-14 2020-02-18 电子科技大学 一种带有源钳位的电流型分段栅极驱动电路
CN109193601B (zh) * 2018-09-25 2020-04-21 华为技术有限公司 一种esd保护电路
CN109951183B (zh) * 2019-03-07 2020-12-25 华为技术有限公司 一种芯片、信号位移电路及电子设备

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US20210409005A1 (en) 2021-12-30
CN109951183A (zh) 2019-06-28
WO2020177466A1 (zh) 2020-09-10
US11522527B2 (en) 2022-12-06
EP3926830B1 (en) 2023-04-26
CN109951183B (zh) 2020-12-25
EP3926830A4 (en) 2022-04-06
KR20210131420A (ko) 2021-11-02
EP3926830A1 (en) 2021-12-22
JP2022524349A (ja) 2022-05-02
JP7381596B2 (ja) 2023-11-15
KR102579207B1 (ko) 2023-09-14

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