CN113444489B - 研磨用组合物、其制造方法、研磨方法及半导体基板的制造方法 - Google Patents

研磨用组合物、其制造方法、研磨方法及半导体基板的制造方法 Download PDF

Info

Publication number
CN113444489B
CN113444489B CN202110318990.3A CN202110318990A CN113444489B CN 113444489 B CN113444489 B CN 113444489B CN 202110318990 A CN202110318990 A CN 202110318990A CN 113444489 B CN113444489 B CN 113444489B
Authority
CN
China
Prior art keywords
group
polishing
polishing composition
unsubstituted
salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110318990.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN113444489A (zh
Inventor
宗宫晃子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2020198712A external-priority patent/JP7697781B2/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN113444489A publication Critical patent/CN113444489A/zh
Application granted granted Critical
Publication of CN113444489B publication Critical patent/CN113444489B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C09C1/3063—Treatment with low-molecular organic compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/08—Treatment with low-molecular-weight non-polymer organic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202110318990.3A 2020-03-25 2021-03-25 研磨用组合物、其制造方法、研磨方法及半导体基板的制造方法 Active CN113444489B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-054516 2020-03-25
JP2020054516 2020-03-25
JP2020198712A JP7697781B2 (ja) 2020-03-25 2020-11-30 研磨用組成物、その製造方法、研磨方法および半導体基板の製造方法
JP2020-198712 2020-11-30

Publications (2)

Publication Number Publication Date
CN113444489A CN113444489A (zh) 2021-09-28
CN113444489B true CN113444489B (zh) 2024-07-05

Family

ID=77809307

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110318990.3A Active CN113444489B (zh) 2020-03-25 2021-03-25 研磨用组合物、其制造方法、研磨方法及半导体基板的制造方法

Country Status (4)

Country Link
US (1) US11339312B2 (https=)
JP (1) JP2025061943A (https=)
CN (1) CN113444489B (https=)
TW (1) TWI883133B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023026778A1 (ja) * 2021-08-24 2023-03-02 Jsr株式会社 化学機械研磨用組成物および研磨方法
KR20230114480A (ko) 2022-01-25 2023-08-01 삼성전자주식회사 슬러리 조성물 및 이를 이용하는 집적회로 소자의 제조 방법
JP2024037248A (ja) * 2022-09-07 2024-03-19 株式会社ディスコ 化合物半導体基板研磨用の研磨液

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201819299A (zh) * 2016-09-30 2018-06-01 日商福吉米股份有限公司 陽離子改性二氧化矽之製造方法及陽離子改性二氧化矽分散體，以及使用陽離子改性二氧化矽之研磨用組成物之製造方法及使用陽離子改性二氧化矽之研磨用組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050065227A1 (en) * 2003-09-22 2005-03-24 Condon John R. Visible-light sensitive macro-initiator
KR100796418B1 (ko) * 2003-11-27 2008-01-21 주고꾸 도료 가부시키가이샤 환식 카르복실산 화합물 및 그의 용도
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
US8697576B2 (en) 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
TWI561620B (en) * 2014-06-20 2016-12-11 Cabot Microelectronics Corp Cmp slurry compositions and methods for aluminum polishing
CN110431209B (zh) * 2017-03-14 2022-06-28 福吉米株式会社 研磨用组合物、其制造方法以及使用其的研磨方法及基板的制造方法
KR102258316B1 (ko) * 2018-06-25 2021-06-01 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물
KR20200025542A (ko) * 2018-08-30 2020-03-10 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201819299A (zh) * 2016-09-30 2018-06-01 日商福吉米股份有限公司 陽離子改性二氧化矽之製造方法及陽離子改性二氧化矽分散體，以及使用陽離子改性二氧化矽之研磨用組成物之製造方法及使用陽離子改性二氧化矽之研磨用組成物

Also Published As

Publication number Publication date
TWI883133B (zh) 2025-05-11
JP2025061943A (ja) 2025-04-11
US11339312B2 (en) 2022-05-24
US20210301176A1 (en) 2021-09-30
CN113444489A (zh) 2021-09-28
TW202138532A (zh) 2021-10-16

Similar Documents

Publication Publication Date Title
CN101490201B (zh) 用于抛光氮化硅材料的组合物及方法
JP5361306B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
CN103492519B (zh) 用于选择性抛光氮化硅材料的组合物及方法
CN113166587B (zh) 用于金属的化学机械抛光的组合物及方法
TWI755727B (zh) 研磨方法及基板之製造方法
CN113444489B (zh) 研磨用组合物、其制造方法、研磨方法及半导体基板的制造方法
CN113493651B (zh) 研磨方法及半导体基板的制造方法
TW201718794A (zh) 研磨方法
JP2010056127A (ja) シリコン膜用ｃｍｐスラリー
JP7697781B2 (ja) 研磨用組成物、その製造方法、研磨方法および半導体基板の製造方法
TWI908219B (zh) 研磨用組合物、研磨方法、及半導體基板之製造方法
JP7697788B2 (ja) 二酸化ケイ素膜及び窒化ケイ素膜研磨用の研磨用組成物、二酸化ケイ素膜及び窒化ケイ素膜研磨用の研磨用組成物の製造方法、研磨方法
JP5397218B2 (ja) シリコン膜用ｃｍｐスラリー
JP7776956B2 (ja) 研磨用組成物、研磨方法、および半導体基板の製造方法
TWI902906B (zh) 經表面修飾之氧化矽粒子及包含此粒子之組合物
CN116891724A (zh) 研磨用组合物、研磨方法和半导体基板的制造方法
TW202413586A (zh) 研磨用組合物、研磨用組合物之製造方法、研磨方法、半導體基板之製造方法
JP7575878B2 (ja) 研磨用組成物、その製造方法、および研磨方法
TWI916537B (zh) 研磨用組合物、研磨方法及半導體基板之製造方法
JP7745391B2 (ja) 研磨用組成物、研磨用組成物の製造方法、研磨方法、半導体基板の製造方法
CN120623979A (zh) 研磨用组合物、研磨方法、及半导体基板的制造方法
JP2025138550A (ja) 研磨用組成物、研磨方法、および半導体基板の製造方法
TW202342666A (zh) 研磨用組合物、研磨方法及半導體基板的製造方法
CN120623980A (zh) 研磨用组合物、研磨方法、及半导体基板的制造方法
JP2026052459A (ja) 研磨用組成物及び研磨方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant