CN113381299B - 发光装置和投影仪 - Google Patents
发光装置和投影仪 Download PDFInfo
- Publication number
- CN113381299B CN113381299B CN202110243203.3A CN202110243203A CN113381299B CN 113381299 B CN113381299 B CN 113381299B CN 202110243203 A CN202110243203 A CN 202110243203A CN 113381299 B CN113381299 B CN 113381299B
- Authority
- CN
- China
- Prior art keywords
- layer
- semiconductor layer
- light
- emitting device
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 228
- 239000012535 impurity Substances 0.000 claims description 12
- 230000001902 propagating effect Effects 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 18
- 230000031700 light absorption Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 8
- 239000002061 nanopillar Substances 0.000 description 8
- 238000003475 lamination Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002073 nanorod Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2013—Plural light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2066—Reflectors in illumination beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Projection Apparatus (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020039603A JP7485278B2 (ja) | 2020-03-09 | 2020-03-09 | 発光装置およびプロジェクター |
| JP2020-039603 | 2020-03-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113381299A CN113381299A (zh) | 2021-09-10 |
| CN113381299B true CN113381299B (zh) | 2023-08-22 |
Family
ID=77556632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110243203.3A Active CN113381299B (zh) | 2020-03-09 | 2021-03-05 | 发光装置和投影仪 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11552216B2 (https=) |
| JP (1) | JP7485278B2 (https=) |
| CN (1) | CN113381299B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210168338A1 (en) * | 2019-11-29 | 2021-06-03 | Seiko Epson Corporation | Light emitting apparatus and projector |
| TWI865872B (zh) * | 2022-05-10 | 2024-12-11 | 鴻海精密工業股份有限公司 | 奈米晶體陣列、雷射器件及顯示裝置 |
| CN117080867A (zh) * | 2022-05-10 | 2023-11-17 | 鸿海精密工业股份有限公司 | 纳米晶体阵列、激光器件及显示装置 |
| KR102872160B1 (ko) * | 2022-07-13 | 2025-10-16 | 국민대학교산학협력단 | 초박형 핀 led 전극어셈블리, 이의 제조방법 및 이를 포함하는 광원 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826463A (zh) * | 2015-01-23 | 2016-08-03 | 三星电子株式会社 | 图案化方法、制造半导体器件的方法及半导体器件 |
| CN110212406A (zh) * | 2018-02-28 | 2019-09-06 | 精工爱普生株式会社 | 发光装置及其制造方法、以及投影仪 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6839370B2 (en) | 2001-12-31 | 2005-01-04 | Agilent Technologies, Inc. | Optoelectronic device using a disabled tunnel junction for current confinement |
| TWI500072B (zh) | 2004-08-31 | 2015-09-11 | 學校法人上智學院 | 發光元件之製造方法 |
| JP2008226906A (ja) | 2007-03-08 | 2008-09-25 | Sharp Corp | 窒化物半導体発光素子 |
| WO2008114707A1 (ja) | 2007-03-22 | 2008-09-25 | Nec Corporation | 面発光型半導体レーザ |
| CN101971369B (zh) | 2008-03-14 | 2012-05-23 | 松下电器产业株式会社 | 化合物半导体发光元件、采用该化合物半导体发光元件的照明装置以及化合物半导体发光元件的制造方法 |
| KR20100082215A (ko) * | 2009-01-08 | 2010-07-16 | 삼성전자주식회사 | 백색 발광 다이오드 |
| JP5420515B2 (ja) | 2010-10-21 | 2014-02-19 | シャープ株式会社 | 窒化物半導体発光素子 |
| JP6227128B2 (ja) | 2013-06-07 | 2017-11-08 | グロ アーベーＧｌｏ Ａｂ | マルチカラーｌｅｄ及びその製造方法 |
| TWI548113B (zh) | 2014-03-11 | 2016-09-01 | 國立臺灣大學 | 半導體發光元件及其製造方法 |
| CN105405946B (zh) | 2014-09-12 | 2018-10-26 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
| CN108292694A (zh) * | 2015-07-13 | 2018-07-17 | 科莱约纳诺公司 | 纳米线/纳米锥形状的发光二极管及光检测器 |
| JP6547552B2 (ja) | 2015-09-28 | 2019-07-24 | 三菱ケミカル株式会社 | Ｃ面ＧａＮウエハおよびＣ面ＧａＮウエハ製造方法 |
| KR20180060704A (ko) * | 2016-11-29 | 2018-06-07 | 광주과학기술원 | 수직 적층형 마이크로 디스플레이 |
| GB201705755D0 (en) * | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| JP6947386B2 (ja) | 2017-06-29 | 2021-10-13 | 学校法人 名城大学 | 半導体発光素子および半導体発光素子の製造方法 |
| US10727372B2 (en) | 2017-07-07 | 2020-07-28 | The Regents Of The University Of Michigan | Dilute-Antimonide group-III-Nitride nanostructure optoelectronic devices |
| JP7293631B2 (ja) | 2018-03-01 | 2023-06-20 | 株式会社リコー | 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法 |
| JP7205820B2 (ja) | 2018-08-07 | 2023-01-17 | 豊田合成株式会社 | 半導体レーザー素子とその製造方法 |
| JP6891870B2 (ja) * | 2018-12-28 | 2021-06-18 | セイコーエプソン株式会社 | プロジェクター |
| JP7232464B2 (ja) * | 2019-03-26 | 2023-03-03 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
| JP7232465B2 (ja) * | 2019-03-26 | 2023-03-03 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
-
2020
- 2020-03-09 JP JP2020039603A patent/JP7485278B2/ja active Active
-
2021
- 2021-03-05 CN CN202110243203.3A patent/CN113381299B/zh active Active
- 2021-03-08 US US17/194,427 patent/US11552216B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826463A (zh) * | 2015-01-23 | 2016-08-03 | 三星电子株式会社 | 图案化方法、制造半导体器件的方法及半导体器件 |
| CN110212406A (zh) * | 2018-02-28 | 2019-09-06 | 精工爱普生株式会社 | 发光装置及其制造方法、以及投影仪 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7485278B2 (ja) | 2024-05-16 |
| US20210280740A1 (en) | 2021-09-09 |
| JP2021141266A (ja) | 2021-09-16 |
| US11552216B2 (en) | 2023-01-10 |
| CN113381299A (zh) | 2021-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111755580B (zh) | 发光装置和投影仪 | |
| CN110808532B (zh) | 发光装置和投影仪 | |
| CN113381299B (zh) | 发光装置和投影仪 | |
| CN112750930B (zh) | 发光装置、投影仪以及显示器 | |
| WO2019039238A1 (ja) | 発光装置およびその製造方法、ならびにプロジェクター | |
| JP7531805B2 (ja) | 発光装置およびプロジェクター | |
| US12125947B2 (en) | Light emitting device and projector | |
| US12316077B2 (en) | Light emitting apparatus and projector | |
| CN114361946B (zh) | 发光装置及投影仪 | |
| CN114389149B (zh) | 发光装置及投影仪 | |
| CN113410758A (zh) | 发光装置以及投影仪 | |
| US12211954B2 (en) | Light emitting apparatus and projector | |
| US11955582B2 (en) | Light emitting apparatus and projector | |
| CN114069386B (zh) | 发光装置及投影仪 | |
| JP7560829B2 (ja) | 発光装置およびプロジェクター | |
| US20220278504A1 (en) | Light emitting apparatus and projector | |
| JP2023041230A (ja) | 発光装置およびプロジェクター |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Akazuka leader Inventor after: Shima Hoyuki Inventor after: KOICHIRO AKASAKA Inventor after: Kishino Katsumi Inventor before: Akazuka leader Inventor before: Shima Hoyuki Inventor before: KOICHIRO AKASAKA |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220921 Address after: Tokyo, Japan Applicant after: Seiko Epson Corp. Applicant after: SOPHIA SCHOOL Corp. Address before: Tokyo, Japan Applicant before: Seiko Epson Corp. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |