CN113381299A - 发光装置和投影仪 - Google Patents
发光装置和投影仪 Download PDFInfo
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- CN113381299A CN113381299A CN202110243203.3A CN202110243203A CN113381299A CN 113381299 A CN113381299 A CN 113381299A CN 202110243203 A CN202110243203 A CN 202110243203A CN 113381299 A CN113381299 A CN 113381299A
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- light
- layer
- semiconductor layer
- emitting device
- tunnel junction
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- 238000004519 manufacturing process Methods 0.000 description 20
- 239000013078 crystal Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 18
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- 239000002356 single layer Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- 230000003321 amplification Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2013—Plural light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2066—Reflectors in illumination beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Devices (AREA)
- Projection Apparatus (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020039603A JP7485278B2 (ja) | 2020-03-09 | 2020-03-09 | 発光装置およびプロジェクター |
JP2020-039603 | 2020-03-09 |
Publications (2)
Publication Number | Publication Date |
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CN113381299A true CN113381299A (zh) | 2021-09-10 |
CN113381299B CN113381299B (zh) | 2023-08-22 |
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Application Number | Title | Priority Date | Filing Date |
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CN202110243203.3A Active CN113381299B (zh) | 2020-03-09 | 2021-03-05 | 发光装置和投影仪 |
Country Status (3)
Country | Link |
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US (1) | US11552216B2 (zh) |
JP (1) | JP7485278B2 (zh) |
CN (1) | CN113381299B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210168338A1 (en) * | 2019-11-29 | 2021-06-03 | Seiko Epson Corporation | Light emitting apparatus and projector |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20080217646A1 (en) * | 2007-03-08 | 2008-09-11 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting device |
CN105826463A (zh) * | 2015-01-23 | 2016-08-03 | 三星电子株式会社 | 图案化方法、制造半导体器件的方法及半导体器件 |
US20170301825A1 (en) * | 2013-06-07 | 2017-10-19 | Glo Ab | Multicolor led and method of fabricating thereof |
US20180151632A1 (en) * | 2016-11-29 | 2018-05-31 | Gwangju Institute Of Science And Technology | Micro display having vertically stacked structure and method of forming the same |
CN110212406A (zh) * | 2018-02-28 | 2019-09-06 | 精工爱普生株式会社 | 发光装置及其制造方法、以及投影仪 |
Family Cites Families (17)
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US6839370B2 (en) | 2001-12-31 | 2005-01-04 | Agilent Technologies, Inc. | Optoelectronic device using a disabled tunnel junction for current confinement |
TWI500072B (zh) | 2004-08-31 | 2015-09-11 | Sophia School Corp | 發光元件之製造方法 |
US7974328B2 (en) | 2007-03-22 | 2011-07-05 | Nec Corporation | Surface-emission type semiconductor laser |
EP2254164B1 (en) | 2008-03-14 | 2012-05-16 | Panasonic Corporation | Compound semiconductor light-emitting element and illumination device using the same, and method for manufacturing compound semiconductor light-emitting element |
JP5420515B2 (ja) | 2010-10-21 | 2014-02-19 | シャープ株式会社 | 窒化物半導体発光素子 |
TWI548113B (zh) | 2014-03-11 | 2016-09-01 | 國立臺灣大學 | 半導體發光元件及其製造方法 |
CN105405946B (zh) | 2014-09-12 | 2018-10-26 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
AU2016292849B2 (en) * | 2015-07-13 | 2019-05-16 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
JP6547552B2 (ja) | 2015-09-28 | 2019-07-24 | 三菱ケミカル株式会社 | C面GaNウエハおよびC面GaNウエハ製造方法 |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
JP6947386B2 (ja) | 2017-06-29 | 2021-10-13 | 学校法人 名城大学 | 半導体発光素子および半導体発光素子の製造方法 |
US10727372B2 (en) | 2017-07-07 | 2020-07-28 | The Regents Of The University Of Michigan | Dilute-Antimonide group-III-Nitride nanostructure optoelectronic devices |
JP7293631B2 (ja) | 2018-03-01 | 2023-06-20 | 株式会社リコー | 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法 |
JP7205820B2 (ja) | 2018-08-07 | 2023-01-17 | 豊田合成株式会社 | 半導体レーザー素子とその製造方法 |
JP6891870B2 (ja) * | 2018-12-28 | 2021-06-18 | セイコーエプソン株式会社 | プロジェクター |
JP7232464B2 (ja) | 2019-03-26 | 2023-03-03 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP7232465B2 (ja) * | 2019-03-26 | 2023-03-03 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
-
2020
- 2020-03-09 JP JP2020039603A patent/JP7485278B2/ja active Active
-
2021
- 2021-03-05 CN CN202110243203.3A patent/CN113381299B/zh active Active
- 2021-03-08 US US17/194,427 patent/US11552216B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080217646A1 (en) * | 2007-03-08 | 2008-09-11 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting device |
US20170301825A1 (en) * | 2013-06-07 | 2017-10-19 | Glo Ab | Multicolor led and method of fabricating thereof |
CN105826463A (zh) * | 2015-01-23 | 2016-08-03 | 三星电子株式会社 | 图案化方法、制造半导体器件的方法及半导体器件 |
US20180151632A1 (en) * | 2016-11-29 | 2018-05-31 | Gwangju Institute Of Science And Technology | Micro display having vertically stacked structure and method of forming the same |
CN110212406A (zh) * | 2018-02-28 | 2019-09-06 | 精工爱普生株式会社 | 发光装置及其制造方法、以及投影仪 |
Also Published As
Publication number | Publication date |
---|---|
JP7485278B2 (ja) | 2024-05-16 |
CN113381299B (zh) | 2023-08-22 |
US20210280740A1 (en) | 2021-09-09 |
JP2021141266A (ja) | 2021-09-16 |
US11552216B2 (en) | 2023-01-10 |
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Inventor after: Akazuka leader Inventor after: Shima Hoyuki Inventor after: KOICHIRO AKASAKA Inventor after: Kishino Katsumi Inventor before: Akazuka leader Inventor before: Shima Hoyuki Inventor before: KOICHIRO AKASAKA |
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