JP7485278B2 - 発光装置およびプロジェクター - Google Patents

発光装置およびプロジェクター Download PDF

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Publication number
JP7485278B2
JP7485278B2 JP2020039603A JP2020039603A JP7485278B2 JP 7485278 B2 JP7485278 B2 JP 7485278B2 JP 2020039603 A JP2020039603 A JP 2020039603A JP 2020039603 A JP2020039603 A JP 2020039603A JP 7485278 B2 JP7485278 B2 JP 7485278B2
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JP
Japan
Prior art keywords
layer
light
semiconductor layer
emitting device
light emitting
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JP2020039603A
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English (en)
Japanese (ja)
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JP2021141266A5 (https=
JP2021141266A (ja
Inventor
泰斗 赤塚
浩行 島田
康一郎 赤坂
克巳 岸野
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Seiko Epson Corp
Sophia School Corp
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Seiko Epson Corp
Sophia School Corp
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Priority to JP2020039603A priority Critical patent/JP7485278B2/ja
Priority to CN202110243203.3A priority patent/CN113381299B/zh
Priority to US17/194,427 priority patent/US11552216B2/en
Publication of JP2021141266A publication Critical patent/JP2021141266A/ja
Publication of JP2021141266A5 publication Critical patent/JP2021141266A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2013—Plural light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2066—Reflectors in illumination beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Projection Apparatus (AREA)
  • Semiconductor Lasers (AREA)
JP2020039603A 2020-03-09 2020-03-09 発光装置およびプロジェクター Active JP7485278B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020039603A JP7485278B2 (ja) 2020-03-09 2020-03-09 発光装置およびプロジェクター
CN202110243203.3A CN113381299B (zh) 2020-03-09 2021-03-05 发光装置和投影仪
US17/194,427 US11552216B2 (en) 2020-03-09 2021-03-08 Light emitting apparatus and projector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020039603A JP7485278B2 (ja) 2020-03-09 2020-03-09 発光装置およびプロジェクター

Publications (3)

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JP2021141266A JP2021141266A (ja) 2021-09-16
JP2021141266A5 JP2021141266A5 (https=) 2023-03-10
JP7485278B2 true JP7485278B2 (ja) 2024-05-16

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US (1) US11552216B2 (https=)
JP (1) JP7485278B2 (https=)
CN (1) CN113381299B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210168338A1 (en) * 2019-11-29 2021-06-03 Seiko Epson Corporation Light emitting apparatus and projector
TWI865872B (zh) * 2022-05-10 2024-12-11 鴻海精密工業股份有限公司 奈米晶體陣列、雷射器件及顯示裝置
CN117080867A (zh) * 2022-05-10 2023-11-17 鸿海精密工业股份有限公司 纳米晶体阵列、激光器件及显示装置
KR102872160B1 (ko) * 2022-07-13 2025-10-16 국민대학교산학협력단 초박형 핀 led 전극어셈블리, 이의 제조방법 및 이를 포함하는 광원

Citations (16)

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US20080217646A1 (en) 2007-03-08 2008-09-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
WO2008114707A1 (ja) 2007-03-22 2008-09-25 Nec Corporation 面発光型半導体レーザ
US20150263227A1 (en) 2014-03-11 2015-09-17 National Taiwan University Semiconductor light-emitting device and manufacturing method thereof
US20160079469A1 (en) 2014-09-12 2016-03-17 Advanced Optoelectronic Technology, Inc. Light emitting diode chip and method of manufacturing same
US20160218280A1 (en) 2015-01-23 2016-07-28 Jongchul PARK Patterning Methods, Methods of Fabricating Semiconductor Devices Using the Same, and Semiconductor Devices Fabricated Thereby
JP2016527706A (ja) 2013-06-07 2016-09-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
JP2017065944A (ja) 2015-09-28 2017-04-06 三菱化学株式会社 Ｃ面ＧａＮウエハおよびＣ面ＧａＮウエハ製造方法
JP2018521516A (ja) 2015-07-13 2018-08-02 クラヨナノ エーエス ナノワイヤ／ナノピラミッド型発光ダイオード及び光検出器
WO2018189205A1 (en) 2017-04-10 2018-10-18 Norwegian University Of Science And Technology (Ntnu) Nanostructure
US20190013440A1 (en) 2017-07-07 2019-01-10 Mohammad Faqrul Alam CHOWDHURY Dilute-Antimonide Group-II-Nitride Nanostructure Optoelectronic Devices
JP2019012744A (ja) 2017-06-29 2019-01-24 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
JP2019149503A (ja) 2018-02-28 2019-09-05 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
JP2019153779A (ja) 2018-03-01 2019-09-12 株式会社リコー 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法
JP2020025020A (ja) 2018-08-07 2020-02-13 豊田合成株式会社 半導体レーザー素子とその製造方法
JP2020106733A (ja) 2018-12-28 2020-07-09 セイコーエプソン株式会社 プロジェクター
JP2020161621A (ja) 2019-03-26 2020-10-01 セイコーエプソン株式会社 発光装置およびプロジェクター

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US6839370B2 (en) 2001-12-31 2005-01-04 Agilent Technologies, Inc. Optoelectronic device using a disabled tunnel junction for current confinement
TWI500072B (zh) 2004-08-31 2015-09-11 學校法人上智學院 發光元件之製造方法
CN101971369B (zh) 2008-03-14 2012-05-23 松下电器产业株式会社 化合物半导体发光元件、采用该化合物半导体发光元件的照明装置以及化合物半导体发光元件的制造方法
KR20100082215A (ko) * 2009-01-08 2010-07-16 삼성전자주식회사 백색 발광 다이오드
JP5420515B2 (ja) 2010-10-21 2014-02-19 シャープ株式会社 窒化物半導体発光素子
KR20180060704A (ko) * 2016-11-29 2018-06-07 광주과학기술원 수직 적층형 마이크로 디스플레이
JP7232465B2 (ja) * 2019-03-26 2023-03-03 セイコーエプソン株式会社 発光装置およびプロジェクター

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080217646A1 (en) 2007-03-08 2008-09-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
WO2008114707A1 (ja) 2007-03-22 2008-09-25 Nec Corporation 面発光型半導体レーザ
JP2016527706A (ja) 2013-06-07 2016-09-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
US20150263227A1 (en) 2014-03-11 2015-09-17 National Taiwan University Semiconductor light-emitting device and manufacturing method thereof
US20160079469A1 (en) 2014-09-12 2016-03-17 Advanced Optoelectronic Technology, Inc. Light emitting diode chip and method of manufacturing same
US20160218280A1 (en) 2015-01-23 2016-07-28 Jongchul PARK Patterning Methods, Methods of Fabricating Semiconductor Devices Using the Same, and Semiconductor Devices Fabricated Thereby
JP2018521516A (ja) 2015-07-13 2018-08-02 クラヨナノ エーエス ナノワイヤ／ナノピラミッド型発光ダイオード及び光検出器
JP2017065944A (ja) 2015-09-28 2017-04-06 三菱化学株式会社 Ｃ面ＧａＮウエハおよびＣ面ＧａＮウエハ製造方法
WO2018189205A1 (en) 2017-04-10 2018-10-18 Norwegian University Of Science And Technology (Ntnu) Nanostructure
JP2019012744A (ja) 2017-06-29 2019-01-24 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
US20190013440A1 (en) 2017-07-07 2019-01-10 Mohammad Faqrul Alam CHOWDHURY Dilute-Antimonide Group-II-Nitride Nanostructure Optoelectronic Devices
JP2019149503A (ja) 2018-02-28 2019-09-05 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
JP2019153779A (ja) 2018-03-01 2019-09-12 株式会社リコー 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法
JP2020025020A (ja) 2018-08-07 2020-02-13 豊田合成株式会社 半導体レーザー素子とその製造方法
JP2020106733A (ja) 2018-12-28 2020-07-09 セイコーエプソン株式会社 プロジェクター
JP2020161621A (ja) 2019-03-26 2020-10-01 セイコーエプソン株式会社 発光装置およびプロジェクター

Also Published As

Publication number Publication date
CN113381299B (zh) 2023-08-22
US20210280740A1 (en) 2021-09-09
JP2021141266A (ja) 2021-09-16
US11552216B2 (en) 2023-01-10
CN113381299A (zh) 2021-09-10

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