CN113328613B - 一种高侧nmos功率管预充电电路 - Google Patents

一种高侧nmos功率管预充电电路 Download PDF

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CN113328613B
CN113328613B CN202110601513.8A CN202110601513A CN113328613B CN 113328613 B CN113328613 B CN 113328613B CN 202110601513 A CN202110601513 A CN 202110601513A CN 113328613 B CN113328613 B CN 113328613B
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vcc
gate
nmos power
side nmos
power tube
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CN113328613A (zh
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闸钢
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Shenzhen Enchip Semiconductor Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/36—Means for starting or stopping converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1203—Circuits independent of the type of conversion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

本发明公开了一种高侧NMOS功率管预充电电路，包括高侧NMOS功率管，所述高侧NMOS功率管的栅极连接有电荷泵和预充电电路；所述预充电电路包括PM0、PM1、PM2、NM0和反相器IV，由信号CHG来控制预充电电路；其中NM0用于在预充电时将PM1的栅极与PM0的栅极短接在一起，使PM0和PM1同时导通；PM2用于预充电结束之后将PM1的栅极与源极短接在一起使PM1截止，切断高侧NMOS功率管的栅极与VCC之间的通路，本发明高侧NMOS功率管栅极电压预充电电路，使得预充电效果最佳。

Description

一种高侧NMOS功率管预充电电路
技术领域
本发明涉及充电电路技术领域，具体是一种高侧NMOS功率管预充电电路。
背景技术
在开关电源、马达控制等功率应用中常会使用两个N型功率MOS管控制输出电压在电源和地电压之间切换。高侧功率管的驱动电路一般需要使用电容自举电路来为其提供高于系统供电电压的电源。在有些应用中，由于芯片引脚的限制，无法使用自举电路来产生高侧驱动电路的电源，而是采用内部的电荷泵来驱动高侧NMOS功率管。受限于芯片内部集成电容的尺寸，内部电荷泵的驱动能力普遍较弱。
发明内容
本发明的目的在于提供一种高侧NMOS功率管预充电电路，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：
一种高侧NMOS功率管预充电电路，包括高侧NMOS功率管，所述高侧NMOS功率管的栅极连接有电荷泵和预充电电路；
所述预充电电路包括PM0、PM1、PM2、NM0和反相器IV，由信号CHG来控制预充电电路；其中NM0用于在预充电时将PM1的栅极与PM0的栅极短接在一起，使PM0和PM1同时导通；PM2用于预充电结束之后将PM1的栅极与源极短接在一起使PM1截止，切断高侧NMOS功率管的栅极与VCC之间的通路。
作为本发明进一步的方案：当CHG=VCC-5V时，反相器IV的输出为VCC，此时NM0导通将PM0与PM1的栅极短接到一起，电压为VCC-5V，PM0及PM1同时导通，对HS的栅极进行预充电。
作为本发明进一步的方案：当CHG电压为VCC时，反相器IV的输出为VCC-5V，此时NM0截止将PM1的栅极与PM0的栅极断开；当高侧NMOS功率管的栅极电压不超过VCC时，PM0不导通，高侧NMOS功率管的栅极与VCC之间呈现断路的状态；当电荷泵开始工作后，高侧NMOS功率管的栅极电压开始超过VCC；在PM0的作用下高侧NMOS功率管的栅极电压使得PM0的源极电压趋于升高；由于PMOS管PM2的栅极连接于VCC，当PM2的源极电压趋于超过VCC时，PM2导通将PM1的栅极与源极短接，使得PM1关断，防止高侧NMOS功率管的栅极连接到VCC。
与现有技术相比，本发明的有益效果是：在预充电开启时可以将高侧NMOS功率管的栅极电压预充到VCC而不会有电压的损失，在预充电关闭的时候也能有效地隔离高侧NMOS功率管的栅极与VCC，与传统的预充电方式相比高侧NMOS功率管具有更高的预充电电压，因而开启的速度更快。同时NM0与PM2 在工作中无静态电流，不消耗静态功率。
附图说明
图1为一种高侧NMOS功率管预充电电路示意图；
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明实施例中，一种高侧NMOS功率管预充电电路，包括高侧NMOS功率管，所述高侧NMOS功率管的栅极连接有电荷泵和预充电电路；
所述预充电电路包括PM0、PM1、PM2、NM0和反相器IV，由信号CHG来控制预充电电路；其中NM0用于在预充电时将PM1的栅极与PM0的栅极短接在一起，使PM0和PM1同时导通；PM2用于预充电结束之后将PM1的栅极与源极短接在一起使PM1截止，切断高侧NMOS功率管的栅极与VCC之间的通路。
当CHG=VCC-5V时，反相器IV的输出为VCC，此时NM0导通将PM0与PM1的栅极短接到一起，电压为VCC-5V，PM0及PM1同时导通，对HS的栅极进行预充电，由于通路中不存在二极管，HS的栅极可以有效地预充到VCC的电压。
当CHG电压为VCC时，反相器IV的输出为VCC-5V，此时NM0截止将PM1的栅极与PM0的栅极断开；当高侧NMOS功率管的栅极电压不超过VCC时，PM0不导通，高侧NMOS功率管的栅极与VCC之间呈现断路的状态；当电荷泵开始工作后，高侧NMOS功率管的栅极电压开始超过VCC；在PM0的作用下高侧NMOS功率管的栅极电压使得PM0的源极电压趋于升高；由于PMOS管PM2的栅极连接于VCC，当PM2的源极电压趋于超过VCC时，PM2导通将PM1的栅极与源极短接，使得PM1关断，防止高侧NMOS功率管的栅极连接到VCC。
在预充电开启时可以将高侧NMOS功率管的栅极电压预充到VCC而不会有电压的损失，在预充电关闭的时候也能有效地隔离高侧NMOS功率管的栅极与VCC，与传统的预充电方式相比高侧NMOS功率管具有更高的预充电电压，因而开启的速度更快。同时NM0与PM2 在工作中无静态电流，不消耗静态功率。
虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。
故以上所述仅为本申请的较佳实施例，并非用来限定本申请的实施范围；即凡依本申请的权利要求范围所做的各种等同变换，均为本申请权利要求的保护范围。

Claims (1)

1.一种高侧NMOS功率管预充电电路，包括高侧NMOS功率管，其特征在于，所述高侧NMOS功率管的栅极连接有电荷泵和预充电电路；
所述预充电电路包括PM0、PM1、PM2、NM0和反相器IV，由信号CHG来控制预充电电路；其中NM0用于在预充电时将PM1的栅极与PM0的栅极短接在一起，使PM0和PM1同时导通；PM2用于预充电结束之后将PM1的栅极与源极短接在一起使PM1截止，切断高侧NMOS功率管的栅极与VCC之间的通路；
当CHG=VCC-5V时，反相器IV的输出为VCC，此时NM0导通将PM0与PM1的栅极短接到一起，电压为VCC-5V，PM0及PM1同时导通，对HS的栅极进行预充电；
当CHG电压为VCC时，反相器IV的输出为VCC-5V，此时NM0截止将PM1的栅极与PM0的栅极断开；当高侧NMOS功率管的栅极电压不超过VCC时，PM0不导通，高侧NMOS功率管的栅极与VCC之间呈现断路的状态；当电荷泵开始工作后，高侧NMOS功率管的栅极电压开始超过VCC；在PM0的作用下高侧NMOS功率管的栅极电压使得PM0的源极电压趋于升高；由于PMOS管PM2的栅极连接于VCC，当PM2的源极电压趋于超过VCC时，PM2导通将PM1的栅极与源极短接，使得PM1关断，防止高侧NMOS功率管的栅极连接到VCC。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013207619A (ja) * 2012-03-29 2013-10-07 Semiconductor Components Industries Llc 出力回路
CN112350702A (zh) * 2020-10-30 2021-02-09 电子科技大学 一种高侧功率开关的输出级电路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145915A (ja) * 1985-12-19 1987-06-30 Mitsubishi Electric Corp Ｍｏｓトランジスタのプリチヤ−ジ回路
JPH07114432A (ja) * 1993-10-19 1995-05-02 Matsushita Electric Ind Co Ltd プリチャージ装置
US7009427B1 (en) * 2000-07-11 2006-03-07 Piconetics, Inc. Low power dynamic inverter logic gate with inverter-like output
EP1505605A1 (en) * 2003-08-06 2005-02-09 STMicroelectronics S.r.l. Improved sensing circuit for a semiconductor memory including bit line precharging and discharging functions
JP2013038930A (ja) * 2011-08-08 2013-02-21 Toshiba Corp スイッチング回路及びｄｃ−ｄｃコンバータ
CN102411979A (zh) * 2011-11-18 2012-04-11 中国科学院声学研究所 一种单端位线的低摆幅预充电电路
KR101874414B1 (ko) * 2012-04-05 2018-07-04 삼성전자주식회사 하이측 게이트 드라이버, 스위칭 칩, 및 전력 장치
JP6117640B2 (ja) * 2013-07-19 2017-04-19 ルネサスエレクトロニクス株式会社 半導体装置及び駆動システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013207619A (ja) * 2012-03-29 2013-10-07 Semiconductor Components Industries Llc 出力回路
CN112350702A (zh) * 2020-10-30 2021-02-09 电子科技大学 一种高侧功率开关的输出级电路

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