CN113324461A - 测量夹具以及测量方法 - Google Patents

测量夹具以及测量方法 Download PDF

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Publication number
CN113324461A
CN113324461A CN202110193455.XA CN202110193455A CN113324461A CN 113324461 A CN113324461 A CN 113324461A CN 202110193455 A CN202110193455 A CN 202110193455A CN 113324461 A CN113324461 A CN 113324461A
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CN
China
Prior art keywords
gap
crucible
quartz crucible
graphite crucible
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110193455.XA
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English (en)
Chinese (zh)
Inventor
友国和树
大滨康生
泽崎二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Publication of CN113324461A publication Critical patent/CN113324461A/zh
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/14Measuring arrangements characterised by the use of mechanical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B3/00Measuring instruments characterised by the use of mechanical techniques
    • G01B3/02Rulers with scales or marks for direct reading
    • G01B3/04Rulers with scales or marks for direct reading rigid
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B3/00Measuring instruments characterised by the use of mechanical techniques
    • G01B3/30Bars, blocks, or strips in which the distance between a pair of faces is fixed, although it may be preadjustable, e.g. end measure, feeler strip

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202110193455.XA 2020-02-28 2021-02-20 测量夹具以及测量方法 Pending CN113324461A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020032945A JP7359720B2 (ja) 2020-02-28 2020-02-28 測定冶具及び測定方法
JP2020-032945 2020-02-28

Publications (1)

Publication Number Publication Date
CN113324461A true CN113324461A (zh) 2021-08-31

Family

ID=77414425

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110193455.XA Pending CN113324461A (zh) 2020-02-28 2021-02-20 测量夹具以及测量方法

Country Status (3)

Country Link
JP (1) JP7359720B2 (ko)
KR (1) KR20210110227A (ko)
CN (1) CN113324461A (ko)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5136278B2 (ja) 2008-08-18 2013-02-06 株式会社Sumco シリコン単結晶の製造方法
JP5490554B2 (ja) 2010-02-01 2014-05-14 コバレントマテリアル株式会社 炭素繊維強化炭素複合材ルツボ及びこのルツボの製造方法
JP5904079B2 (ja) 2012-10-03 2016-04-13 信越半導体株式会社 シリコン単結晶育成装置及びシリコン単結晶育成方法
EP3015574B1 (en) 2013-06-29 2018-03-21 Sumco Corporation Silicon single crystal pulling method
JP2019048750A (ja) 2017-09-12 2019-03-28 クアーズテック株式会社 石英ガラスルツボの修正方法
JP2019167263A (ja) 2018-03-23 2019-10-03 クアーズテック株式会社 石英ガラスルツボおよび石英ガラスルツボの製造方法

Also Published As

Publication number Publication date
JP7359720B2 (ja) 2023-10-11
JP2021134126A (ja) 2021-09-13
KR20210110227A (ko) 2021-09-07

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