CN113261088B - 用于覆晶激光接合的系统 - Google Patents

用于覆晶激光接合的系统 Download PDF

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CN113261088B
CN113261088B CN201980087456.7A CN201980087456A CN113261088B CN 113261088 B CN113261088 B CN 113261088B CN 201980087456 A CN201980087456 A CN 201980087456A CN 113261088 B CN113261088 B CN 113261088B
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安根植
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Abstract

本发明是有关于一种覆晶激光接合系统，更详细而言是有关于利用激光束将覆晶形态的半导体芯片接合至基板的覆晶激光接合系统。根据本发明的覆晶激光接合系统具有如下效果：通过以加压状态将半导体芯片激光接合至基板，从而可将弯曲或可能弯曲的半导体芯片接合至基板而无焊料凸块的接触不良。

Description

用于覆晶激光接合的系统
技术领域
本发明涉及一种覆晶(flip chip)激光接合系统，更详细而言涉及一种利用激光束将覆晶形态的半导体芯片接合至基板的覆晶激光接合系统。
背景技术
电子制品小型化的同时，广泛使用不使用打线接合(wire bonding)的覆晶形态的半导体芯片。覆晶形态的半导体芯片以如下方式安装至基板：于半导体芯片的下表面形成焊料凸块形态的多个电极，并接合至与形成于基板的焊料凸块对应的位置。
如上所述，以覆晶方式将半导体芯片安装至基板的方法大致有回焊(reflow)方式与激光接合方式。回焊方式为如下方式：通过在将于焊料凸块涂布有焊剂(flux)的半导体芯片配置于基板上的状态下经由高温的回焊而将半导体芯片接合至基板。与回焊方式相同地，激光接合方式为如下方式：通过在将于焊料凸块涂布有焊剂的半导体芯片配置于基板上的状态下对半导体芯片照射激光束而传递能量，从而瞬间使焊料凸块熔化后凝固的同时将半导体芯片接合至基板。
最近，所使用的覆晶形态的半导体芯片存在厚度变薄至数十微米以下的趋势。如上所述，于半导体芯片薄的情况下，因半导体芯片自身的内部应力而半导体芯片微细地弯曲或翘曲(warped)的情况多。如上所述，于半导体芯片变形的情况下，会发生在半导体芯片的焊料凸块中有与基板的对应的焊料凸块以不接触的状态接合的情况。此种状况导致半导体芯片接合制程的不良。另外，于半导体芯片及基板的温度上升以将半导体芯片接合至基板的情况下，会发生因材料内部材质的热膨胀系数的差异而使半导体芯片或基板局部地弯曲或翘曲的现象。此种现象亦导致半导体芯片接合制程的不良。
发明内容
发明所欲解决的课题
本发明是为了解决如上所述的问题点而提出的，目的在于提供一种覆晶激光接合系统，所述覆晶激光接合系统防止焊料凸块的接触不良的同时，可有效地将弯曲或翘曲的半导体芯片或因温度上升而可能弯曲或翘曲的半导体芯片接合至基板。
解决课题的手段
用以达成所述目的的本发明的覆晶激光接合系统，包括：供给单元，供给基板，所述基板处于配置有用以接合至基板的上表面的多个半导体芯片的状态；固定单元，自所述供给单元接收所述基板并固定所述基板的下表面；激光单元，包含对固定于所述固定单元的基板照射激光束而将所述半导体芯片与基板接合的激光头、及移送所述激光头的激光移送部；遮罩，包含透过部，所述透过部使自所述激光单元的激光头照射的激光束透过；遮罩放置单元，将所述遮罩放置于所述固定单元的上侧；排出单元，自所述固定单元传递接收并排出所述基板；以及控制部，对所述供给单元、所述固定单元、所述激光单元及所述排出单元的作动进行控制。
发明的效果
根据本发明的覆晶激光接合系统具有如下效果：通过以加压状态将半导体芯片激光接合至基板，从而可将弯曲或可能弯曲的半导体芯片接合至基板而无焊料凸块的接触不良。
附图说明
图1是根据本发明的一实施例的覆晶激光接合系统的立体图。
图2是图1所示的覆晶激光接合系统的前视图。
图3是针对图1所示的覆晶激光接合系统的一部分的俯视图。
图4是图1所示的覆晶激光接合系统所使用的遮罩的俯视图。
图5是图4所示的遮罩的V-V线的剖视图。
具体实施方式
以下，参照随附附图，详细地对根据本发明的覆晶激光接合系统进行说明。
图1是根据本发明的一实施例的覆晶激光接合系统的立体图，图2是图1所示的覆晶激光接合系统的前视图。
本实施例的覆晶激光接合系统是利用激光束而以便于将半导体芯片以覆晶形态接合至基板的装置。于基板与半导体芯片中任一者或于两者分别形成有焊料凸块，因此通过利用激光束传递的能量而使焊料凸块瞬间熔化后凝固，同时将半导体芯片接合至基板。
参照图1及图2，根据本实施例的覆晶激光接合系统包括供给单元110、固定单元120、激光单元200及排出单元130而构成。
供给单元110是将用以进行激光接合的基板供给至固定单元120的构成。基板以配置有多个半导体芯片的状态被供给。通常，于基板涂布有焊剂且于其上配置有半导体芯片。因焊剂的粘性或粘着性而半导体芯片处于临时接着于基板的状态。除非施加较大的振动或外力，配置于一个基板的半导体芯片通过焊剂而不晃动，且保持相对于基板的位置。
如上所述，供给单元110将以临时接着有半导体芯片的状态的多个基板依次供给至固定单元120。于本实施例的情况下，供给单元110利用支撑基板的两侧的皮带(belt)而向固定单元120供给基板。
固定单元120亦利用支撑基板的两侧的皮带而将自供给单元110传递接收的基板移送至作业位置。固定单元120以吸附基板的下表面的方法进行固定。
激光单元200配置于固定单元120的上侧。激光单元200包含激光头210与激光移送部220。激光头210对固定于固定单元120的基板照射激光束并传递能量。激光移送部220沿上下方向与水平方向移送激光头210。控制部500使激光单元200作动，以便激光头210沿固定于固定单元120的基板的半导体芯片的上侧依次移动的同时照射激光束。
于固定基板的固定单元120的上侧配置遮罩400。遮罩400通过遮罩放置单元300支撑。遮罩400包含可使激光光透过的透过部440。自激光头210照射的激光束通过遮罩400的透过部440而传递至下侧的半导体芯片。关于遮罩400的具体构造将在下文进行说明。
加压单元350为如下构成：使遮罩放置单元300与固定单元120中的任一者相对于另一者进行升降，以便于通过遮罩400的透过部440对附着于基板的半导体芯片进行加压。于本实施例，加压单元350使基板升降。参照图2，加压单元350使在固定单元120中吸附基板的下表面的构成升降。若于遮罩放置单元300放置有遮罩400的状态下，加压单元350抬升基板，则遮罩400的透过部440的重量被置于半导体芯片以同时对半导体芯片进行加压。
排出单元130自固定单元120传递接收并排出完成半导体芯片的激光接合的基板。与供给单元110及固定单元120相同地，排出单元130利用支撑基板的两侧的皮带而自固定单元120传递接收基板并排出至卸载机(unloader)。
控制部500对包含供给单元、固定单元120、激光单元200、排出单元130等构成在内的本发明的主要构成的作动进行控制。
检查相机230配置于固定单元120的上侧。于本实施例，检查相机230设置于激光单元200并通过激光移送部220与激光头210一同移动。检查相机230对配置于下侧的基板或遮罩400进行拍摄，以使控制部500掌握半导体芯片的位置或判断遮罩400是否污染。
检查灯610配置于检查相机230的下侧。于本实施例的情况下，检查灯610设置于后述的遮罩更换单元600。检查灯610配置于移送遮罩400的路径的下侧。检查灯610自遮罩400的下侧照射光。自检查灯610产生的光经过遮罩400的透过部440而传递至上侧的检查相机230。利用检查灯610的照明，检查相机230可更有效地对遮罩400的透过部440进行拍摄。接收在检查相机230中拍摄的影像的控制部500检查遮罩400的透过部440是否污染，并基于此检查遮罩400的更换必要性。
参照图3，于固定单元120的上侧设置有红外线相机240。红外线相机240对固定于固定单元120的基板的半导体芯片进行拍摄。于遮罩400被配置于基板的上侧的情况下，通过遮罩400的透过部440对半导体芯片进行拍摄。控制部500可利用在红外线相机240中所拍摄的值来掌握半导体芯片的不同区域的温度。控制部500利用红外线相机240的测定值来控制激光单元200的激光头210的作动。
遮罩更换单元600为收容多个遮罩400的构成，且视需要而为对放置于遮罩放置单元300的遮罩400进行更换的构成。控制部500视需要向遮罩更换单元600传递遮罩400更换命令，从而遮罩更换单元600将放置于遮罩放置单元300的遮罩400更换为新的遮罩400。如上所述，检查灯610设置于遮罩更换单元600，因此通过作为更换对象的遮罩400配置于检查灯610的上侧的状态检查遮罩400是否污染。若控制部500检查由检查相机230拍摄的影像的结果判断为未被污染，则将遮罩400再次传递至遮罩放置单元300。于控制部500判断为遮罩400被污染的情况下，则将污染的遮罩400收容于遮罩更换单元600并引出新的遮罩400传递至遮罩放置单元300。
以下，参照图4及图5，对遮罩400的构造进行说明。
于本实施例中使用的遮罩400包含遮罩本体410与多个透过孔420及透过部440。
遮罩本体410形成为平板形态。将遮罩本体410制作成与基板的形状对应的形状，并考虑到基板的大小而制作成与基板相似的大小。
遮罩本体410形成有多个透过孔420。透过孔420于将要配置于遮罩400下侧的基板的半导体芯片的位置对应的位置分别形成。将透过孔420制作成与半导体芯片的大小及形状相似的大小及形状。于本实施例的情况下，使用包含较半导体芯片的大小略微更大地形成的透过孔420的遮罩本体410。
于各个透过孔420形成以分别向内侧突出的方式形成的止挡棱430。于本实施例的情况下，如图4所示，止挡棱430形成为与透过孔420对应的形状。止挡棱430的形状可使用除图4所示的情况以外其他各种形状。
参照图5，透过部440分别插入至透过孔420各一个。此时，透过部440的下部以挂于止挡棱430的方式形成。透过部440的下表面形成为平面形态。于通过加压单元350的作动而透过部440对各个基板上的半导体芯片进行加压时，通过下表面平整地形成的透过部440而均匀地以平面的方式对半导体芯片进行加压。透过部440包含可透过激光束的透明材质。广泛用于使激光束透过的用途的石英(quartz)可用作透过部440的材料。遮罩本体410由激光束不能透过的不透明材质形成。遮罩本体410起到如下作用：防止激光束通过除透过部440之外的区域。
于本实施例的情况下，于透过部440的上表面形成有以凹陷的方式形成的重量槽441。于重量槽441分别配置重量锤442。重量锤442起到如下作用：使通过透过部440对半导体芯片加压的力进一步增加。
以下，对根据如上所述般构成的本实施例的覆晶激光接合系统的作动进行说明。
首先，准备配置有半导体芯片的基板。如上所述，以将半导体芯片临时接着于基板的方法将配置有半导体芯片的基板自供给单元110依次供给，所述半导体芯片于形成于半导体芯片的下表面的焊料凸块涂布有焊剂。
供给单元110将基板供给至固定单元120。固定单元120传递接收基板并以吸附下表面的方法固定。
于此种状态下，激光单元200的激光移送部220使检查相机230在基板之上移动，同时对基板的半导体芯片进行拍摄。控制部500利用自检查相机230传递接收的影像来掌握各半导体芯片的位置。
下面，遮罩更换单元600将遮罩400移送至固定单元120的上侧。遮罩放置单元300传递接收遮罩400并放置于基板的上侧。
于此种状态下，加压单元350使固定于固定单元120的基板上升。
若基板通过加压单元350上升，则使基板的半导体芯片与各个遮罩400的透过部440的下表面接触。若加压单元350使基板继续上升，则各个半导体芯片相对于遮罩本体410而抬升透过部440。如上所述，由于透过部440为挂于遮罩本体410的止挡棱430的状态，因此若使半导体芯片继续上升，则透过部440通过半导体芯片而被向上侧抬升。即，于遮罩本体410静止的状态下，仅使透过部440上升。结果，透过部440的负荷传递至各半导体芯片，同时平整地对半导体芯片的上表面进行加压。此时，如上所述，若于透过部440的重量槽配置有重量锤442，则按照重量锤442的重量增加对半导体芯片加压的力的大小。
于此种状态下，控制部500使激光单元200作动而依次对基板的半导体芯片进行接合。若激光移送部220将激光头210依次配置于各个半导体芯片上，且激光头210照射激光束，则半导体芯片接合至基板。激光束透过透过部440与半导体芯片的本体而传递至焊料凸块，使温度升高而使焊料凸块接着至基板的接垫。
激光束瞬间使焊料凸块的温度升高，因此具有不使半导体芯片本身的温度高至所需以上的优点。即便半导体芯片翘曲或产生热变形，遮罩400的透过部440亦按压半导体芯片的上表面，因此具有可防止半导体芯片翘曲或弯曲的优点。如上所述，若防止半导体芯片弯曲，则可防止因半导体芯片的焊料凸块中的一部分与基板不接合而产生的不良。
如前文所述，激光束可仅通过遮罩400的透过部440而无法通过遮罩本体410，因此自激光头210照射的激光束仅传递至半导体芯片。如上所述，具有如下效果：通过利用包含透过部440与遮罩本体410的遮罩400，可防止对无需传递激光束的能量的基板部分照射激光束。
另外，亦可将多个半导体芯片同时接合至基板。若操作激光头210而使激光束的照射面积变宽，则可对两个以上的半导体芯片同时照射激光束。由于激光束无法通过遮罩400的遮罩本体410，因此即便对宽的区域照射激光束亦可仅对需要接合的半导体芯片传递激光束的能量。通过以此种方法将多个半导体芯片同时接合至基板，从而可整体上提高制程的生产性。视情况，亦可对遮罩400整体照射激光束而将半导体芯片整体同时接合至基板。
另一方面，透过部440的配置重量槽441与重量锤442的区域形成于不形成半导体芯片的焊料凸块的区域。于本实施例的情况下，于半导体芯片的中央部不存在焊料凸块而仅于半导体芯片的边缘部分存在焊料凸块，因此如图所示，于透过部440的中央部配置重量槽441与重量锤442。
经过如上所述的过程而完成接合的基板自固定单元120传递至排出单元130。排出单元130传递接收相应基板并传递至卸载机。
若遮罩400的使用次数超过固定次数，则控制部500使遮罩更换单元600作动，以便进行污染检查或进行更换。
例如，于使用遮罩400二十次后，控制部500通过遮罩更换单元600将遮罩400自遮罩放置单元300移送至检查灯610的上侧。于此种状态下，控制部500点亮检查灯610，并通过检查相机230对遮罩400进行拍摄。若于遮罩400拍摄影像中发现透过部440受到污染且发现微尘粒子等，则控制部500使遮罩更换单元600作动以便更换遮罩400。遮罩更换单元600更换污染的遮罩400且将新的遮罩400移送并放置至遮罩放置单元300。于控制部500的检查结果判定遮罩400未被污染的情况下，将曾存在于检查灯610上侧的遮罩400再次移送至遮罩放置单元300进行再使用。
另一方面，控制部500可利用红外线相机240实时测定半导体芯片的温度并反映温度来控制激光头210的作动。于使用遮罩400的情况下，红外线相机240通过遮罩400的温度而间接地测定半导体芯片的温度。
本实施例的覆晶激光接合系统亦可视情况而不使用遮罩400。于配置于基板的半导体芯片不存在弯曲或翘曲的可能性的情况下，可不利用遮罩400对半导体芯片加压而直接对半导体芯片照射激光束的同时进行接合。于此种情况下，控制部500可利用红外线相机240直接拍摄半导体芯片的上表面，并利用该测定值反馈控制激光头210的作动。
以上，列举较佳的例子对本发明进行了说明，但本发明的范围并不限定于前文说明并图示的形态。
例如，前文对加压构件使基板上升的情况进行了说明，但亦能够以加压构件使遮罩400下降的方法对半导体芯片进行加压。
另外，前文对在遮罩400的透过部440形成重量槽441并配置重量锤442的情况进行了说明，但亦可使用不包含重量槽441与重量锤442的构造的遮罩400。
另外，前文对包含遮罩更换单元600的构造的覆晶激光接合系统列举为例进行了说明，但亦可构成不包含遮罩更换单元600的构造的覆晶激光接合系统。于此种情况下，能够以如下方式构成覆晶激光接合系统：亦可不检查遮罩400是否污染而继续使用，并以手动作业的方式更换遮罩400来使用。
另外，亦可构成不包含红外线相机240、检查灯610、检查相机230等构造的覆晶激光接合系统。

Claims (8)

1.一种覆晶激光接合系统，包括：
供给单元，供给基板，所述基板处于配置有用以接合至基板的上表面的多个半导体芯片的状态；
固定单元，自所述供给单元接收所述基板并固定所述基板的下表面；
激光单元，包含对固定于所述固定单元的所述基板照射激光束而将所述半导体芯片与所述基板接合的激光头、及移送所述激光头的激光移送部；
遮罩，包含透过部，所述透过部使自所述激光单元的所述激光头照射的所述激光束透过；
遮罩放置单元，将所述遮罩放置于所述固定单元的上侧；
排出单元，自所述固定单元传递接收并排出所述基板；
控制部，对所述供给单元、所述固定单元、所述激光单元及所述排出单元的作动进行控制；以及
遮罩更换单元，所述遮罩更换单元将所述遮罩供给至所述遮罩放置单元或排出所述遮罩。
2.根据权利要求1所述的覆晶激光接合系统，还包括加压单元，使所述遮罩放置单元与所述固定单元中的任一者相对于另一者进行升降，以使所述遮罩的所述透过部能够对固定于所述固定单元的所述基板的所述多个半导体芯片进行加压。
3.根据权利要求2所述的覆晶激光接合系统，其中所述遮罩还包括平板形态的遮罩本体、形成于所述遮罩本体的多个透过孔，
所述遮罩的所述透过部具有多个且分别插入至所述遮罩的所述多个透过孔。
4.根据权利要求3所述的覆晶激光接合系统，其中所述遮罩还包括于所述多个透过孔分别向内侧突出的止挡棱，
所述多个透过部分别插入至所述遮罩的所述多个透过孔，并以挂于所述止挡棱的方式放置。
5.根据权利要求4所述的覆晶激光接合系统，其中于所述遮罩的所述多个透过部的上表面分别形成以凹陷的方式形成的重量槽，
所述遮罩还包括放置于所述透过部的所述重量槽的重量锤，以增加对配置于所述基板的所述多个半导体芯片分别加压的重量。
6.根据权利要求1所述的覆晶激光接合系统，还包括：
检查灯，自所述遮罩的下侧对所述遮罩照射光；以及
检查相机，自上侧对所述遮罩或所述基板进行拍摄，
所述控制部利用由所述检查相机对所述遮罩拍摄的影像来判断所述遮罩是否污染。
7.根据权利要求6所述的覆晶激光接合系统，其中所述检查灯设置于所述遮罩更换单元，
所述检查相机设置于所述激光单元，并通过所述激光移送部移送。
8.根据权利要求7所述的覆晶激光接合系统，还包括红外线相机，对由所述激光单元的所述激光头照射所述激光束的所述半导体芯片进行拍摄，
所述控制部利用在所述红外线相机中测定的值而对所述激光头的作动进行控制。
CN201980087456.7A 2019-01-04 2019-06-05 用于覆晶激光接合的系统 Active CN113261088B (zh)

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