CN113130524B - 具有在光电二极管层上印制的驱动微集成芯片的x射线检测器 - Google Patents
具有在光电二极管层上印制的驱动微集成芯片的x射线检测器 Download PDFInfo
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- CN113130524B CN113130524B CN202011609021.5A CN202011609021A CN113130524B CN 113130524 B CN113130524 B CN 113130524B CN 202011609021 A CN202011609021 A CN 202011609021A CN 113130524 B CN113130524 B CN 113130524B
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41F16/00—Transfer printing apparatus
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
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- G01T1/1603—Measuring radiation intensity with a combination of at least two different types of detector
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- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
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- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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- G01T1/246—Measuring radiation intensity with semiconductor detectors utilizing latent read-out, e.g. charge stored and read-out later
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- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
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- G01T1/247—Detector read-out circuitry
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
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- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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- H10F39/809—Constructional details of image sensors of hybrid image sensors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
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- Engineering & Computer Science (AREA)
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- Biomedical Technology (AREA)
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- Medical Informatics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Optics & Photonics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/731,007 | 2019-12-30 | ||
| US16/731,007 US11194063B2 (en) | 2019-12-30 | 2019-12-30 | X-ray detector having driver micro integrated chips printed on photodiode layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113130524A CN113130524A (zh) | 2021-07-16 |
| CN113130524B true CN113130524B (zh) | 2024-12-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011609021.5A Active CN113130524B (zh) | 2019-12-30 | 2020-12-30 | 具有在光电二极管层上印制的驱动微集成芯片的x射线检测器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11194063B2 (enExample) |
| EP (1) | EP3846211B1 (enExample) |
| JP (1) | JP7633021B6 (enExample) |
| KR (1) | KR102520453B1 (enExample) |
| CN (1) | CN113130524B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823745B (zh) * | 2021-01-28 | 2024-10-29 | 睿生光电股份有限公司 | X射线装置 |
| US20240241272A1 (en) * | 2023-01-17 | 2024-07-18 | GE Precision Healthcare LLC | Flat panel x-ray detector for computed tomography |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9368683B1 (en) * | 2015-05-15 | 2016-06-14 | X-Celeprint Limited | Printable inorganic semiconductor method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5464984A (en) * | 1985-12-11 | 1995-11-07 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
| JP4205134B2 (ja) * | 1998-02-09 | 2009-01-07 | シャープ株式会社 | 二次元画像検出器 |
| TW417383B (en) * | 1998-07-01 | 2001-01-01 | Cmos Sensor Inc | Silicon butting contact image sensor chip with line transfer and pixel readout (LTPR) structure |
| US6510195B1 (en) * | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
| DE10142531A1 (de) * | 2001-08-30 | 2003-03-20 | Philips Corp Intellectual Pty | Sensoranordnung aus licht- und/oder röntgenstrahlungsempfindlichen Sensoren |
| EP2142943A2 (en) * | 2007-04-23 | 2010-01-13 | Koninklijke Philips Electronics N.V. | Detector with a partially transparent scintillator substrate |
| JP5172267B2 (ja) * | 2007-10-09 | 2013-03-27 | 富士フイルム株式会社 | 撮像装置 |
| JP5281484B2 (ja) * | 2009-05-28 | 2013-09-04 | 浜松ホトニクス株式会社 | 放射線検出ユニット |
| JP5467846B2 (ja) * | 2009-11-20 | 2014-04-09 | 富士フイルム株式会社 | 放射線検出素子 |
| KR20140092438A (ko) * | 2012-12-27 | 2014-07-24 | 삼성전자주식회사 | 엑스선 검출 패널, 엑스선 촬영 장치 및 엑스선 영상 생성 방법 |
| US9354186B2 (en) * | 2013-03-13 | 2016-05-31 | Texas Instruments Incorporated | X-ray sensor and signal processing assembly for an X-ray computed tomography machine |
| US9324747B2 (en) | 2014-03-13 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| US20160020131A1 (en) * | 2014-07-20 | 2016-01-21 | X-Celeprint Limited | Apparatus and methods for micro-transfer-printing |
| JP2016039203A (ja) * | 2014-08-06 | 2016-03-22 | ソニー株式会社 | 機能性素子および電子機器 |
| US10050076B2 (en) | 2014-10-07 | 2018-08-14 | Terapede Systems Inc. | 3D high resolution X-ray sensor with integrated scintillator grid |
| US9905607B2 (en) * | 2015-07-28 | 2018-02-27 | General Electric Company | Radiation detector fabrication |
| CN207587734U (zh) * | 2017-03-13 | 2018-07-06 | 泰拉派德系统股份有限公司 | 一种间接x射线传感器、直接x射线传感器和光学传感器 |
| US10832935B2 (en) * | 2017-08-14 | 2020-11-10 | X Display Company Technology Limited | Multi-level micro-device tethers |
-
2019
- 2019-12-30 US US16/731,007 patent/US11194063B2/en active Active
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2020
- 2020-03-30 EP EP20166711.0A patent/EP3846211B1/en active Active
- 2020-12-25 JP JP2020217042A patent/JP7633021B6/ja active Active
- 2020-12-29 KR KR1020200185653A patent/KR102520453B1/ko active Active
- 2020-12-30 CN CN202011609021.5A patent/CN113130524B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9368683B1 (en) * | 2015-05-15 | 2016-06-14 | X-Celeprint Limited | Printable inorganic semiconductor method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7633021B2 (ja) | 2025-02-19 |
| KR20210086981A (ko) | 2021-07-09 |
| EP3846211B1 (en) | 2024-12-11 |
| EP3846211A1 (en) | 2021-07-07 |
| JP2021110741A (ja) | 2021-08-02 |
| JP7633021B6 (ja) | 2025-03-07 |
| US11194063B2 (en) | 2021-12-07 |
| US20210199817A1 (en) | 2021-07-01 |
| CN113130524A (zh) | 2021-07-16 |
| KR102520453B1 (ko) | 2023-06-08 |
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