CN113066851A - 一种InAlGaN/GaN异质结结构及其生长方法 - Google Patents
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Abstract
一种InAlGaN/GaN异质结结构及其生长方法，属于半导体材料外延生长技术领域。采用MOCVD方法在衬底层上依次外延生长GaN沟道层和InAlGaN势垒层，通过控制生长条件生长In：Al组分比约为1:5的InAlGaN势垒层，使InAlGaN势垒层与GaN沟道层实现a轴晶格匹配。本发明方法可以获得a轴晶格匹配的InAlGaN/GaN异质结，消除势垒层与沟道层之间的晶格失配，可以解决目前高Al组分AlGaN/GaN基电子器件中由于晶格失配而导致的结晶质量下降问题，可显著降低强电场下短沟道电子器件的逆压电极化效应，能够实现具有高密度二维电子气和高电导特性的无应变异质结结构。
Description
技术领域
本发明属于半导体材料外延生长技术领域，具体涉及一种InAlGaN/GaN异质结结构及其生长方法。
背景技术
GaN作为一种宽禁带的直接带隙半导体材料，室温下禁带宽度约为3.39eV，具有击穿电压高、电子饱和速度高、热导率高、介电常数低、化学稳定性好等特点。因此GaN有着非常广泛的应用，在大功率电子器件尤其高频微波器件应用方面有着广阔的前景。
GaN基电子器件的研究大多基于AlGaN/GaN异质结，这是由于AlGaN/GaN异质结具有很强的自发极化和压电极化效应，在AlGaN势垒层非故意掺杂的情况下就能形成高迁移率、高密度的二维电子气(2DEG)，正是AlGaN/GaN异质结2DEG沟道的高电导能力为GaN电子器件提供了基础。
为了使GaN基电子器件达到更高的工作频率，如毫米波频段甚至太赫兹频段，要求器件的沟道长度必须足够短，这时器件的短沟道效应将成为一个重要的问题。为了克服短沟道效应对器件的影响，需要减薄AlGaN势垒层厚度，但同时还要保持高的异质结沟道电导特性，就必须增大势垒层Al组分，增强自发极化和压电极化效应以维持高2DEG密度。然而，高Al组分AlGaN和GaN的晶格失配增大，AlGaN势垒层受到GaN的张应变增加，会导致异质结界面粗糙度增加以及AlGaN势垒层结晶质量下降，降低2DEG面密度和迁移率，同时高Al组分AlGaN的绝缘性增加，欧姆接触电阻将会增大。另外，器件处于工作状态时，在靠近漏极的栅下方存在大的电场，在AlGaN势垒层的很小区域内产生大的应力，处于晶格失配状态的AlGaN势垒层会发生逆压电效应，导致在其内部形成晶体缺陷，严重影响高频毫米波器件的工作性能和可靠性。
发明内容
本发明提出了一种InAlGaN/GaN异质结结构及其生长方法，该结构采用四元InAlGaN材料作为势垒层，InAlGaN材料在In：Al组分比约为1:5时可实现与GaN材料a轴晶格常数匹配，在晶格匹配的同时还可实现InAlGaN材料禁带宽度的改变，有利于调控InAlGaN/GaN异质结界面处2DEG密度，适用于高频氮化物电子器件的制备。
本发明由如下技术方案实现：
本发明所提出的一种InAlGaN/GaN异质结结构(见附图1)，其从下至上依次由衬底层1、GaN沟道层2、InAlGaN势垒层3构成。其特征在于：该异质结结构的势垒层3是由与GaN沟道层2a轴晶格匹配的四元InxAlyGa1-x-yN(0<x<0.2，0<y<0.8)材料构成(见附图2)。
如上所述的一种InAlGaN/GaN异质结结构，其特征在于：GaN沟道层2厚度为1～5μm、InAlGaN势垒层3厚度为1～30nm。
如上所述的一种InAlGaN/GaN异质结结构，其特征在于：GaN沟道层2采用的是两步温度生长法制备，即首先在较低温度(500～900℃)生长一定厚度的的低温GaN层，然后升高温度(1000～1300℃)进行高温GaN层的外延生长，低温GaN层和高温GaN层共同构成GaN沟道层2。
如上所述的一种InAlGaN/GaN异质结结构，其特征在于：衬底层1可以为蓝宝石、SiC、Si、GaN、AlN或金刚石衬底。
一种如上所述的InAlGaN/GaN异质结结构的生长方法，其步骤如下：
采用MOCVD方法在衬底层1上首先外延生长GaN沟道层2，包括先在较低温度(500～900℃)外延生长厚度为10～100nm的低温GaN层，生长压力为200～600mbar，然后升高温度(1000～1300℃)继续外延生长厚度为1～5μm的高温GaN层，生长压力为200～600mbar，低温GaN层和高温GaN层共同构成了GaN沟道层2。之后降温至750～850℃外延生长厚度为1～30nm的InAlGaN势垒层3，生长压力为400～600mbar，生长源为三甲基镓(TMGa)、三甲基铟(TMIn)、三甲基铝(TMAl)及高纯氨气(NH3)。
本发明的效果和益处：本发明方法可以获得a轴晶格匹配的InAlGaN/GaN异质结，消除势垒层与沟道层之间的晶格失配，可以解决目前高Al组分AlGaN/GaN基电子器件中由于晶格失配而导致的结晶质量下降问题，可显著降低强电场下短沟道电子器件的逆压电极化效应，同时在InAlGaN势垒层和GaN沟道层的异质结界面处具有更大的导带带阶，能够实现具有高密度二维电子气和高电导特性的无应变异质结结构。因此，本发明提出的InAlGaN/GaN异质结结构，可用于高频GaN基电子器件的制备。
附图说明
图1：本发明所述InAlGaN/GaN异质结的外延结构示意图。
图2：本发明所述InAlGaN材料的a轴晶格常数与组分对应关系示意图。
图1中标识：1为衬底层、2为GaN沟道层、3为InAlGaN势垒层。
图2中颜色表示InAlGaN材料的a轴晶格常数数值，虚线表示In：Al组分比约为1:5时可与GaN晶格匹配的InAlGaN的a轴晶格常数。
具体实施方式
实施例1：
采用MOCVD方法，在(0001)面的蓝宝石衬底层1上首先外延生长厚度为20nm的低温GaN层，生长温度为550℃，生长压力为600mbar，生长源为三甲基镓(TMGa)和高纯氨气(NH3)。然后升温至1100℃，继续外延生长厚度为2μm的高温GaN层，生长压力为300mbar，使用在线原位反射率监测系统实时监控高温GaN层的厚度，低温GaN层和高温GaN层共同构成GaN沟道层2。之后降温至810℃，继续外延生长厚度为30nm的InAlGaN势垒层3，生长压力为600mbar，生长源为三甲基镓(TMGa)、三甲基铟(TMIn)、三甲基铝(TMAl)及高纯氨气(NH3)。各层具体生长参数见表1。
表1：InAlGaN/GaN异质结的外延结构各层生长参数
表1附注：TMGa代表三甲基镓；TMIn代表三甲基铟；TMAl代表三甲基铝；NH3代表高纯氨气。
Claims (5)
1.一种InAlGaN/GaN异质结结构，其特征在于：从下至上依次由衬底层(1)、GaN沟道层(2)、InAlGaN势垒层(3)构成，该异质结结构的势垒层(3)是由与GaN沟道层(2)a轴晶格匹配的四元InxAlyGa1-x-yN材料构成，0<x<0.2，0<y<0.8。
2.如权利要求1所述的一种InAlGaN/GaN异质结结构，其特征在于：该结构外延生长的GaN沟道层(2)的厚度为1～5μm，InAlGaN势垒层(3)的厚度为1～30nm。
3.如权利要求1所述的一种InAlGaN/GaN异质结结构，其特征在于：衬底层(1)为蓝宝石、SiC、Si、GaN、AlN或金刚石衬底。
4.权利要求1所述的一种InAlGaN/GaN异质结结构的生长方法，其特征在于：采用MOCVD方法在所述衬底层(1)上首先外延生长厚度为1～5μm的GaN沟道层(2)，之后在GaN沟道层(2)上继续外延生长厚度为1～30nm的InAlGaN势垒层(3)，生长源为三甲基镓(TMGa)、三甲基铟(TMIn)、三甲基铝(TMAl)及高纯氨气(NH3)，生长温度为500～1300℃，生长压强为50～600mbar。
5.如权利要求4所述的一种InAlGaN/GaN异质结结构的生长方法，其特征在于：GaN沟道层(2)采用两步温度生长法制备，即首先在较低温度(500～900℃)外延生长厚度为10～100nm的低温GaN层，生长压力为600mbar，之后升高温度(1000～1300℃)继续外延生长厚度为1～5μm的高温GaN层，生长压力为300mbar，低温GaN层和高温GaN层共同构成GaN沟道层(2)。
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