CN113035860B - 静电保护电路及半导体装置 - Google Patents

静电保护电路及半导体装置 Download PDF

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Publication number
CN113035860B
CN113035860B CN202011549252.1A CN202011549252A CN113035860B CN 113035860 B CN113035860 B CN 113035860B CN 202011549252 A CN202011549252 A CN 202011549252A CN 113035860 B CN113035860 B CN 113035860B
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CN
China
Prior art keywords
diode
electrostatic protection
protection circuit
semiconductor device
signal terminal
Prior art date
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Active
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CN202011549252.1A
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English (en)
Chinese (zh)
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CN113035860A (zh
Inventor
富冈勉
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Ablic Inc
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Ablic Inc
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Publication of CN113035860A publication Critical patent/CN113035860A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/817—FETs in a Darlington configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202011549252.1A 2019-12-24 2020-12-24 静电保护电路及半导体装置 Active CN113035860B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019233133A JP7383343B2 (ja) 2019-12-24 2019-12-24 静電保護回路及び半導体装置
JP2019-233133 2019-12-24

Publications (2)

Publication Number Publication Date
CN113035860A CN113035860A (zh) 2021-06-25
CN113035860B true CN113035860B (zh) 2025-06-10

Family

ID=76438388

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011549252.1A Active CN113035860B (zh) 2019-12-24 2020-12-24 静电保护电路及半导体装置

Country Status (5)

Country Link
US (2) US11791330B2 (https=)
JP (1) JP7383343B2 (https=)
KR (1) KR102891162B1 (https=)
CN (1) CN113035860B (https=)
TW (1) TWI859373B (https=)

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060037A (en) * 1987-04-03 1991-10-22 Texas Instruments Incorporated Output buffer with enhanced electrostatic discharge protection
US5545909A (en) 1994-10-19 1996-08-13 Siliconix Incorporated Electrostatic discharge protection device for integrated circuit
JP2000223499A (ja) 1999-01-28 2000-08-11 Mitsumi Electric Co Ltd 静電保護装置
JP2002050640A (ja) 2000-05-22 2002-02-15 Sony Corp 電界効果トランジスタの保護回路及び半導体装置
JP3675303B2 (ja) * 2000-05-31 2005-07-27 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置及びその製造方法
TW483143B (en) * 2001-02-05 2002-04-11 Vanguard Int Semiconduct Corp Voltage control device for electrostatic discharge protection and its related circuit
US6710990B2 (en) * 2002-01-22 2004-03-23 Lsi Logic Corporation Low voltage breakdown element for ESD trigger device
US8560047B2 (en) 2006-06-16 2013-10-15 Board Of Regents Of The University Of Nebraska Method and apparatus for computer aided surgery
JP5015509B2 (ja) * 2006-07-27 2012-08-29 ルネサスエレクトロニクス株式会社 静電保護回路および半導体装置
JP2008116770A (ja) * 2006-11-07 2008-05-22 Hitachi Displays Ltd 表示装置
US7817459B2 (en) * 2007-01-24 2010-10-19 Keystone Semiconductor Inc. Depletion-mode MOSFET circuit and applications
US8530904B2 (en) * 2010-03-19 2013-09-10 Infineon Technologies Austria Ag Semiconductor device including a normally-on transistor and a normally-off transistor
KR101799017B1 (ko) * 2011-08-18 2017-11-20 에스케이하이닉스 주식회사 전압 안정화 회로를 구비한 반도체 집적 회로
JP6201422B2 (ja) * 2013-05-22 2017-09-27 富士電機株式会社 半導体装置
TWI501498B (zh) * 2013-10-04 2015-09-21 Silicon Motion Inc 靜電放電保護電路及其靜電保護方法
JP2015095541A (ja) 2013-11-12 2015-05-18 パナソニックＩｐマネジメント株式会社 サージ保護装置
JP6291929B2 (ja) * 2014-03-14 2018-03-14 富士電機株式会社 半導体装置
JP6223918B2 (ja) * 2014-07-07 2017-11-01 株式会社東芝 半導体装置
JP6238860B2 (ja) 2014-09-01 2017-11-29 三菱電機株式会社 電力用スイッチングデバイス駆動回路
US9625925B2 (en) * 2014-11-24 2017-04-18 Silicon Laboratories Inc. Linear regulator having a closed loop frequency response based on a decoupling capacitance
US9837399B2 (en) 2015-07-24 2017-12-05 Semiconductor Components Industries, Llc Cascode configured semiconductor component and method
JP6889146B2 (ja) * 2016-02-18 2021-06-18 ローム株式会社 保護回路、および保護回路の動作方法、および半導体集積回路装置
CN107658856B (zh) * 2017-10-30 2024-03-26 长鑫存储技术有限公司 一种静电保护电路以及集成电路芯片
US10193554B1 (en) * 2017-11-15 2019-01-29 Navitas Semiconductor, Inc. Capacitively coupled level shifter
US11271392B2 (en) * 2019-01-17 2022-03-08 Texas Instruments Incorporated Protection circuit for signal processor

Also Published As

Publication number Publication date
KR102891162B1 (ko) 2025-11-25
US12268032B2 (en) 2025-04-01
US20240006408A1 (en) 2024-01-04
CN113035860A (zh) 2021-06-25
US11791330B2 (en) 2023-10-17
KR20210082087A (ko) 2021-07-02
TWI859373B (zh) 2024-10-21
US20210193649A1 (en) 2021-06-24
JP7383343B2 (ja) 2023-11-20
JP2021101456A (ja) 2021-07-08
TW202133385A (zh) 2021-09-01

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