CN112979297A - 一种低介电常数微波介质陶瓷材料及陶瓷元器件 - Google Patents
一种低介电常数微波介质陶瓷材料及陶瓷元器件 Download PDFInfo
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Abstract
一种低介电常数微波介质陶瓷材料,其特征在于,包括以质量计的以下组分:主料,所述主料含量为75‑85wt%,所述主料为R掺杂的Zn2SiO4,其中,R包括Nb、Sm、La、Nd中的一种或多种,R的含量为Si的摩尔含量的0.01‑0.1倍;辅料,所述辅料为TiO2,所述辅料含量为10‑17wt%;烧结助剂,所述烧结助剂包括SiO2、Na2O和B2O3中的一种或多种,所述烧结助剂含量为1‑10wt%。该低介电常数微波介质陶瓷材料介电常数为8‑11、品质因数大于40000、谐振频率温度系数τf为‑35~0ppm/℃,可以广泛应用于介质谐振天线、滤波器、双工器等陶瓷元器件中。
Description
技术领域
本发明涉及电子陶瓷技术领域,尤其是一种低介电常数微波介质陶瓷材料及陶瓷元器件。
背景技术
微波介质陶瓷是一种应用于微波频段(主要是300MHz~30GHz)电路中作为现代通信中的一种关键材料,其因具有微波信号的频率极高、波长极短、信息容量大,有强方向性、穿透性和吸收能力等特点,而作为现代通讯广泛使用的谐振器、滤波器、介质波导回路等其他微波元器件的核心部件材料。随着移动通信技术的迅速发展,微波技术设备向小型化、多功能、高性能、低成本方向发展,对微波介质陶瓷提出了更高的要求。
衡量微波介质陶瓷的生产指标和应用价值的三个参数为:介电常数、品质因数和谐振频率温度系数。低介电常数可以提高信号在介质中的传播速度,而高介电常数可以减小器件的尺寸;品质因数是表征介质材料在交变电场中极化时对于电能的损耗的指标;谐振频率温度系数是衡量材料对于温度的稳定性。
随着5G技术的不断发展,新型毫米波器件和系统快速发展,在极高频的毫米波段下,介质材料需要较低的介电常数、极低的介质损耗和近零的谐振频率温度系数,以提高器件的信息传输速率、增强选频性和降低能耗、保证谐振与传输时信号的工作稳定性。目前,典型的低介电常数微波介质陶瓷材料体系主要包括Al2O3系、硅酸盐系、钨酸盐系、磷酸盐系、堇青石等。其中Zn2SiO4是一种重要的低介电常数微波介质陶瓷材料。
Zn2SiO4陶瓷具有较低的介电常数(6-7)和介电损耗,但存在谐振频率温度系数偏高(-60ppm/℃)、烧结宽容性和稳定性差的问题,烧结后瓷体易玻璃化,难以实现工业化生产
为了解决上述技术问题,提出了本发明的低介电常数微波介质陶瓷材料及其制备方法。
发明内容
本发明提出了一种低介电常数微波介质陶瓷材料,其具有较低的介电常数(8-11)、较高的品质因数、谐振频率温度系数τf较小,且烧结温度1000-1100℃,瓷体致密性好,可以大批稳定生产,可应用于介质谐振天线、滤波器、双工器等陶瓷元器件中。
本发明提供了一种低介电常数微波介质陶瓷材料,其包括以质量计的以下组分:
主料,所述主料含量为75-85wt%,所述主料为R掺杂的Zn2SiO4,其中,R包括Nb、Sm、La、Nd中的一种或多种,R的含量为Si的摩尔含量的0.01-0.1倍;
辅料,所述辅料为TiO2,其含量为10-17wt%;
烧结助剂,所述烧结助剂包括SiO2、Na2O和B2O3中的一种或多种,所述烧结助剂含量为1-10wt%。
其中,以SiO2、Na2CO3、H3BO3为相应原料引入所述烧结助剂。
其中,所述低介电常数微波介质陶瓷材料介电常数为8-11、品质因数大于40000、谐振频率温度系数τf为-35~0ppm/℃。
本发明还提供了上述低介电常数微波介质陶瓷材料的制备方法,包括:
(1)按所需化学组成,称取相应的Zn源、Si源和R源,混合、球磨、研磨分散、干燥、过筛后煅烧,煅烧温度为1040-1060℃,煅烧时间为3-5h,合成所述主料;
(2)将主料、辅料和烧结助剂按照配方配料,混合、球磨、研磨分散,向研磨分散后的浆料中加入粘结剂、脱模剂和消泡剂,充分混合后进行喷雾造粒;
(3)对造粒后的物料进行成型、排胶和烧结,烧结温度为1000-1100℃,得到所述低介电常数微波介质陶瓷材料。
其中,所述步骤(1)中,所述Zn源为ZnO,所述Si源为SiO2,所述R源为Nb2O5、Sm2O3、La2O3、Nd2O3中的一种或多种。
其中,所述步骤(1)和(2)中,使用球磨机进行球磨,使用砂磨机进行研磨分散。
其中,所述步骤(1)中,使用推板炉进行煅烧。
其中,所述步骤(2)中,以SiO2、Na2CO3、H3BO3为原料引入所述烧结助剂。
其中,所述步骤(2)中,球磨后物料的固含量为50-70wt%。
其中,所述步骤(2)中,所述粘结剂为聚乙烯醇、聚乙二醇、丙烯酸类粘结剂中的两种或者三种。
其中,所述步骤(2)中,粘结剂含量为3-9wt%。
本发明还提供了一种陶瓷元器件,其包括上述低介电常数微波介质陶瓷材料。
其中,所述陶瓷元器件包括介质谐振天线、滤波器、双工器。
相比于现有技术,本发明具有以下优点:
(1)本发明采用固相法合成硅酸锌基微波介质陶瓷材料,合成过程通过Nb、Sm、La、Nd等元素部分取代Zn,该掺杂有利于晶相合成,改善瓷体的烧结稳定性,且调整材料的谐振频率温度系数向正向移动,使谐振频率温度系数变小;
(2)通过TiO2的添加调整材料的谐振频率温度系数接近0;
(3)通过烧结助剂Si、B、Na等添加改善瓷体的烧结性,使烧后瓷体孔隙少、致密性好、烧结后性能稳定。
(4)最终得到的微波介质陶瓷材料具有较低的介电常数8-11、较高的品质因数大于40000、较小的谐振频率温度系数τf-35~0ppm/℃。其烧结温度为1000-1100℃,瓷体致密性好,可以大批稳定生产,可以在介质谐振天线、滤波器、双工器等器件中广泛使用。
附图说明
图1是实施例1制得的低介电常数微波介质陶瓷材料的瓷体断面扫描电镜照片。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合具体实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本发明。
按照表1所示的配方,根据本发明的方法制备实施例1-7的低介电常数微波介质陶瓷材料,并使用网络分析仪测试其性能,结果亦列在表1中。
表1实施例1-7的微波介质陶瓷材料配方及性能测试结果
表1结果表明,本发明实施例均获得了较低的介电常数、较高的品质因数和较小的谐振频率温度系数,满足微波介质陶瓷元器件的应用需求。
图1也显示了本发明实施例1制得的低介电常数微波介质陶瓷材料的瓷体断面扫描电镜照片。由图1可知,本发明实施例1制得的低介电常数微波介质陶瓷材料烧后瓷体孔隙少、致密性好。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。
Claims (10)
1.一种低介电常数微波介质陶瓷材料,其特征在于,包括以质量计的以下组分:
主料,所述主料含量为75-85wt%,所述主料为R掺杂的Zn2SiO4,其中,R包括Nb、Sm、La、Nd中的一种或多种,R的含量为Si的摩尔含量的0.01-0.1倍;
辅料,所述辅料为TiO2,所述辅料含量为10-17wt%;
烧结助剂,所述烧结助剂包括SiO2、Na2O和B2O3中的一种或多种,所述烧结助剂含量为1-10wt%。
2.如权利要求1所述的低介电常数微波介质陶瓷材料,其中,以SiO2、Na2CO3、H3BO3为相应原料引入所述烧结助剂。
3.如权利要求1或2所述的低介电常数微波介质陶瓷材料,其中,所述低介电常数微波介质陶瓷材料介电常数为8-11、品质因数大于40000、谐振频率温度系数τf为-35~0ppm/℃。
4.如权利要求1-3所述的低介电常数微波介质陶瓷材料的制备方法,包括:
(1)按所需化学组成,称取相应的Zn源、Si源和R源,混合、球磨、研磨分散、干燥、过筛后煅烧,煅烧温度为1040-1060℃,煅烧时间为3-5h,合成所述主料;
(2)将主料、辅料和烧结助剂按照配方配料,混合、球磨、研磨分散,向研磨分散后的浆料中加入粘结剂、脱模剂和消泡剂,充分混合后进行喷雾造粒;
(3)对造粒后的物料进行成型、排胶和烧结,烧结温度为1000-1100℃,得到所述低介电常数微波介质陶瓷材料。
5.如权利要求4所述的低介电常数微波介质陶瓷材料的制备方法,其中,所述步骤(1)中,所述Zn源为ZnO,所述Si源为SiO2,所述R源为Nb2O5、Sm2O3、La2O3、Nd2O3中的一种或多种。
6.如权利要求4所述的低介电常数微波介质陶瓷材料的制备方法,其中,所述步骤(2)中,以SiO2、Na2CO3、H3BO3为原料引入所述烧结助剂。
7.如权利要求4所述的低介电常数微波介质陶瓷材料的制备方法,其中,所述步骤(2)中,所述粘结剂为聚乙烯醇、聚乙二醇、丙烯酸类粘结剂中的两种或者三种。
8.如权利要求4所述的低介电常数微波介质陶瓷材料的制备方法,其中,所述步骤(2)中,粘结剂含量为3-9wt%。
9.一种陶瓷元器件,其包括如权利要求1-3任一所述的低介电常数微波介质陶瓷材料。
10.如权利要求9所述的陶瓷元器件,其中,所述陶瓷元器件包括介质谐振天线、滤波器、双工器。
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