CN1129036C - 抗蚀层的剥离方法 - Google Patents

抗蚀层的剥离方法 Download PDF

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Publication number
CN1129036C
CN1129036C CN99804505A CN99804505A CN1129036C CN 1129036 C CN1129036 C CN 1129036C CN 99804505 A CN99804505 A CN 99804505A CN 99804505 A CN99804505 A CN 99804505A CN 1129036 C CN1129036 C CN 1129036C
Authority
CN
China
Prior art keywords
stripper
resist layer
ammonium
ion source
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN99804505A
Other languages
English (en)
Chinese (zh)
Other versions
CN1298496A (zh
Inventor
E·雅克布森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FLYTHE METALS Inc
Original Assignee
FLYTHE METALS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FLYTHE METALS Inc filed Critical FLYTHE METALS Inc
Publication of CN1298496A publication Critical patent/CN1298496A/zh
Application granted granted Critical
Publication of CN1129036C publication Critical patent/CN1129036C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
CN99804505A 1998-02-26 1999-02-01 抗蚀层的剥离方法 Expired - Fee Related CN1129036C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3115498A 1998-02-26 1998-02-26
US09/031,154 1998-02-26

Publications (2)

Publication Number Publication Date
CN1298496A CN1298496A (zh) 2001-06-06
CN1129036C true CN1129036C (zh) 2003-11-26

Family

ID=21857911

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99804505A Expired - Fee Related CN1129036C (zh) 1998-02-26 1999-02-01 抗蚀层的剥离方法

Country Status (6)

Country Link
EP (1) EP1057080A1 (fr)
JP (1) JP2002505448A (fr)
KR (1) KR20010041221A (fr)
CN (1) CN1129036C (fr)
TW (1) TW407449B (fr)
WO (1) WO1999044101A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3328250B2 (ja) 1998-12-09 2002-09-24 岸本産業株式会社 レジスト残渣除去剤
WO2000044034A1 (fr) * 1999-01-25 2000-07-27 Speedfam-Ipec Corporation Procedes et solutions de nettoyage pour post-polissage chimique et mecanique
KR20030007288A (ko) * 2002-11-29 2003-01-23 (주) 라모스테크놀러지 전자메일 기능을 구비한 디지털 재생장치 및 그 신호 처리방법
KR100582202B1 (ko) * 2003-10-13 2006-05-23 엘지.필립스 엘시디 주식회사 박막트랜지스터 어레이 기판의 제조장치 및 방법
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
CN102221791B (zh) * 2011-04-29 2014-09-03 西安东旺精细化学有限公司 一种光致抗蚀剂的剥离液组合物
US8975008B2 (en) * 2012-05-24 2015-03-10 Rohm And Haas Electronic Materials Llc Method of removing negative acting photoresists
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD143920A1 (de) * 1979-05-24 1980-09-17 Uwe Jungstand Ausstreifmittel zum entfernen von positivfotolacken
JPS60203944A (ja) * 1984-03-28 1985-10-15 Mitsubishi Gas Chem Co Inc ポジ型フオトレジストの除去法

Also Published As

Publication number Publication date
KR20010041221A (ko) 2001-05-15
CN1298496A (zh) 2001-06-06
JP2002505448A (ja) 2002-02-19
EP1057080A1 (fr) 2000-12-06
TW407449B (en) 2000-10-01
WO1999044101A1 (fr) 1999-09-02

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee