CN1129036C - Resist stripping process - Google Patents

Resist stripping process Download PDF

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Publication number
CN1129036C
CN1129036C CN99804505A CN99804505A CN1129036C CN 1129036 C CN1129036 C CN 1129036C CN 99804505 A CN99804505 A CN 99804505A CN 99804505 A CN99804505 A CN 99804505A CN 1129036 C CN1129036 C CN 1129036C
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CN
China
Prior art keywords
stripper
resist layer
ammonium
ion source
organic compound
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN99804505A
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Chinese (zh)
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CN1298496A (en
Inventor
E·雅克布森
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FLYTHE METALS Inc
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FLYTHE METALS Inc
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Publication of CN1298496A publication Critical patent/CN1298496A/en
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

A process for removing patterned negative working resist from the surface of a substrate during manufacture of printed wiring boards is disclosed. The process includes the steps of contacting the patterned resist with a stripping solution containing an alkalinity source as well as a source of ammonium ions. The stripping solution is characterized in that it does not contain volatile organic compounds (VOCs).

Description

The stripping means of resist layer
The invention belongs to the field that printed-wiring board (PWB) is produced.More specifically, the present invention relates to from remove or peel off the method for resist layer material through the printed-wiring board (PWB) behind plating or the etching work procedure.
At present most of printed-wiring board (PWB)s (PWB) of producing are to adopt to deduct (etching) and add technology manufacturing that (plating) combine.In order on the surface of PWB, to determine the organic polymer resist layer that generally is dry film or liquid form to be coated on the copper foil laminate a kind of conductive pattern.
In the case, when wherein this resist layer is the photic qualification type of negativity, with for example visible light or ultraviolet (UV) radiation of electromagnetic energy of passing the pattern projection, to this plate exposure that resist layer is arranged.That this pattern has been determined to remain to be formed on this plate, with the erect image or the suitable figure of negative-appearing image of metal trace.The exposed portion of negative corrosion-resisting layer is subjected to chemical change, and it is retained on this plate.The unexposed portion of this resist layer then is developed (promptly removing).Different with it is, in the positivity system, the exposure region of resist layer becomes and dissolves in developer solution.Therefore, this solvable district promptly is removed, and the unexposed area of the resist layer of patterning (patterned) is stayed on this plate.Perhaps, the resist layer image can be determined or patterning with silk screen print method.More uncommonly be to determine pattern in the resist layer with electron beam or laser ablation method.
After the resist layer image was determined, particular type and selected certain fabrication techniques according to PWB stood the surface of this plate the processing of plating or etching work procedure.After treatment, generally the photopolymer resist layer must be removed so that further processing.This removes operation is to adopt resist layer to peel off method to realize.
Usually with the remover of strong basicity (causticity) solution as resist layer.Wherein the most frequently used is NaOH and potassium hydroxide.The maximum drawback of using caustic liquor is that peeling rate is slow, the life-span short and so-called " sheet shape is peeled off ".Above-mentioned last a kind of influence is because caustic liquor is tended to make most of resist layer swelling rather than it is broken and is granule, and makes it be big sheet to strip down and cause.These tablets are very disagreeable, because they can deposit and stick on the copper surface of this plate, thereby cause problem in etching work procedure subsequently.In addition, the resist layer tablet of peeling off can also blocking filter and the nozzle of spraying machine, causes a large amount of maintenance problems.
Seldom be used for PWB " skin " based on the remover of caustic liquor, in the case, generally resist layer be used for electroplating work procedure to determine image.This be since in fact can not be with the swelling between the thin trace of acidproof copper and tin/tin-plumbous overlapping plating resist layer peel off due to clean this fact.In addition, caustic liquor tends to corrode tin or tin-plumbous etched resist layer.Thereby tend to the causticity remover is used for the application of requirement lower " internal layer " or " printing and etching ", in the case, resist layer is used for etching work procedure merely to determine pattern.Regrettably, above-mentioned deposit again and the maintenance problem still exists.
Another kind of known remover combination type is made up of organic (the being carbon containing) amine of aliphatic series or ring family, organic quaternary ammonium base and organic solvent.Sometimes the oxyhydroxide that also adopts inorganic base metal is as the second alkali carrier.United States Patent (USP) 5,545,353 have described a kind of remover combination of photoresist layer, and said composition comprises organic polar solvent, alkanolamine and as the thiocarboxylic acid of corrosion inhibiter.United States Patent (USP) 5,556,482 have told about the method that composition that a kind of employing comprises organic polar solvent, basic amine and inhibitor is peeled off photoresist layer.United States Patent (USP) 4,904,571 disclose the method that solution that a kind of employing comprises the borane compound of alcohol, ether, ketone, chlorated chloro-hydrocarbons, aromatic hydrocarbons, alkali metal hydroxide, carbonate, phosphate, pyrophosphate, borohydrides and organic amine is removed photoresist layer.
In most of known remover combinations, the organic moiety that comprises the remover of amine and solvent mixture can play basic remover.The little advantage of resist layer granularity that known these compositions have high-performance (promptly at a high speed), long-life and strip down.Regrettably, the organic moiety of this remover combination is made up of volatile organic compounds (VOC hereinafter referred to as).Because severe day by day governmental environmental law and regulation, printed wire board industry is under the heavy pressure that reduces the VOC emanation at present.
VOC is commonly defined as any fluid carbon compound (except the carbonide of methane, carbon monoxide, carbon dioxide, carbonic acid, metal or carbonate, hartshorn salt and the exempt compound) that participates in atmospheric photochemical reaction.In the presence of from the UV radiation of daylight and aerial oxygen, VOC and oxides of nitrogen (NO x) in the troposphere, carry out the key component that photochemical reaction forms ground level ozone-" smog ", this " smog " is NO x, peroxyacetyl nitrate (PAN) (CH 3COONO 2), the potpourri of VOC and ozone.As a result, VOC is defined as " ozone precursors ".
The present invention relates to from remove or peel off the method for resist layer material through the printed-wiring board (PWB) behind plating or the etching work procedure.More specifically, the present invention relates to remove the resist layer method of patterning from substrate, this method comprises: make to have the patterning or the operation of the resist layer of stratification on the substrate surface; The operation of the VOC free resist layer stripper that comprises ammonium ion source is provided and substrate is stood stripper handle time enough, make all patternings or the resist layer of the stratification operation of removing from this surface.Surprisingly, found that ammonium ion is very effective when peeling off resist layer pattern or resist layer.Therefore, the invention provides a kind of without VOC, former state peels off the straightforward procedure of photoresist layer, like this, the present invention has just eliminated a great environomental pollution source.
Be that one of operation target, the PWB production run is peeling off of resist layer just to reduce and finally to eliminate the VOC emanation.Surprisingly, have been found that the organic mixture that is present in amine, solvent and quaternary ammonium compound in the known resist layer stripping composition usually, can be contained ammonium ion source for example the inorganic solution that does not contain VOC of ammonia or ammonium hydroxide successfully substitute.Compound based on ammonia has been used for PWB industry, and ammonium hydroxide then is widely used in the ammoniacal etchant agent of various copper etching processes.As mentioned above, etching work procedure is before resist layer is peeled off when internal layer is produced just, or an operation after resist layer is peeled off when skin is produced.
Ammonia solution soluble in water, in case dissolving is decided according to pH, it can form ammonium ion with hydrogen (hydronium(ion)) ionic reaction.If be easy to obtain hydrogen ion, for example when hanging down pH, this reaction can take place.In being difficult to obtain hydrionic alkaline solution, ammonia keeps its gas form.During greater than about 9.3 (25 ℃ time), 50% ammonia is the ammonium ion form at pH; And be about at 12 o'clock at pH, almost 100% ammonia still keeps gas form.At high temperature, balance more moves to gaseous state.
Conventional resist layer remover generally pH greater than about 11 and temperature be about under the condition of 120-130 (about 49-54 ℃) and use.Under these conditions, in fact all ammonia still keep gas form and volatilization in several hours greatly.Therefore, commercial never with the basic remover of ammonia as resist layer.Though United States Patent (USP) 3,980,587 disclose the solution that a kind of employing contains 10-30 pound/gallon (about 1.2-3.6 kg/liter) concentrate peels off the method for some resist layer, this concentrate contains the ethylene glycol monobutyl ether (50-55% (weight)) as basic resist layer remover, edta salt, acetate and alkaline remover component (19% (weight)), this alkalescence remover component contains 30: 1 the potassium hydroxide and the potpourri of ammonium hydroxide, but the inappreciable ammonium hydroxide of this concentration does not have obvious help to the effect of peeling off of organic remover (ethylene glycol monobutyl ether) and alkali carrier (potassium hydroxide).
Equally, United States Patent (USP) 4,078,102 have also described a kind of method of peeling off resist layer as the potpourri of the aldehydes or ketones of basic resist layer remover and activator that adopts, this activator contains the alcoholic solution of ammonium, alkaline metal and alkaline earth metal hydroxide, and the proportioning of this potpourri is the aldehydes or ketones of activator than 1 mole of 0.005-0.1 mole.In a more preferred embodiment, this patent advises that the ratio of saturated NaOH (alkali carrier) aqueous isopropanol and cyclohexanone (basic resist layer remover) is that 0.006-0.01 is than 1.Moreover, can think that the effect of peeling off of said composition is because the organic moiety of remover rather than inorganic base carrier cause.
Design as basis of the present invention provides a kind of method of peeling off resist layer that adopts ammonia or other ammonium ion source not to adopt any volatile organic materials, full water-based VOC free as basic resist layer remover.The invention still further relates at high temperature, (being 80-140 °F) makes the ammonium concentration in the alkaline solution (pH＞9) keep constant and sufficiently high method.The optional bath component of peeling off comprises the involatile inhibitor of avoiding the metal surface to be subjected to the stripper corrosion and antifoaming agent or the defoamer that produces in order to the control foam when the effect of peeling off for raising is carried out high-speed stirred to stripper.
In order to prolong the life-span of stripper, most of modern age, the resist layer release system was generally operated in the mode of so-called " discharge while feeding in raw material ".In this manner, remove a part continuously and peel off body lotion, and continuously with additional this body lotion of the stripper of new preparation.Under these conditions, by adopting following any method, can easily make ammonium concentration remain on constant level:
A) continuously Ammonia is added in the stripper;
B) add alkaline ammonium salt (carbonate, carbamate, silicate, formates, phosphate, sulphite etc.) continuously, in pH＞12 and 120-130 °F down these ammonium salts will be converted into ammonia;
C) continuously the ammonia that compresses is directly injected stripper;
D) extraction and recovery ammonia from the ammoniacal etchant agent steam that is rich in ammonia, and continuously it is injected stripper, thus with its circulation.
Can adopt any the whole bag of tricks known in the art, stripper is applied on the photoresist layer that has developed.For example, the plate that has the photoresist layer that has developed can be immersed in the bath of stripper simply.Perhaps, stripper can be sprayed on this plate.It is to be noted the method that applies stripper on the photoresist layer that has developed as herein described never means it is limitation of the present invention.
It will also be appreciated that ammonium ion source is not limited to above-mentioned several material, and or rather, ammonium ion source can be that any energy uses the ammonium ion source that but VOC can not introduced production run.It is evident that equally,, for this stripper is converted into the ability in ammonia source with ammonium ion, need this stripper is remained on causticity pH again both for the stripping ability of stripper.Self-evident, severally be used to provide and/or keep this compound of peeling off the body lotion causticity though above narrated, and do not mean that strictness of the present invention is limited on those compounds.Or rather, in fact any alkali source as long as it does not introduce production run with VOC, can adopt.
Embodiment 1
Copper foil laminate is carried out hot roll lamination, exposure with DuPont Riston 9020 dry films and in 1% sodium carbonate liquor, develop.Preparation contains the resist layer stripper of the potassium hydroxide of 20 grams per liters and 10 milliliters/liter ammonium hydroxide (30% aqueous solution).This stripper is heated to about 125 °F (about 51.7 ℃), then this plate is immersed in this solution.Less than 60 seconds, all resist layers are promptly removed from the surface of this plate fully. Embodiment 2
Copper foil laminate is carried out hot roll lamination, exposure with Dynachem Laminar GA dry film and in 1% sodium carbonate liquor, develop.Preparation contains the resist layer stripper of the ammonium bicarbonate of the NaOH of 50 grams per liters and 20 grams per liters.This stripper is heated to about 130 °F (about 54.4 ℃), then this plate is immersed in this solution.Less than 60 seconds, all resist layers are promptly removed from the surface of this plate fully. Embodiment 3
Copper foil laminate is carried out hot roll lamination, exposure with DuPont Riston 9015 dry films and in 1% sodium carbonate liquor, develop.Prepare the resist layer stripper of the aminoquinoxaline of the lithium hydroxide of 25 grams per liters and 15 grams per liters.This stripper is heated to about 120 °F (about 48.9 ℃), then this plate is immersed in this solution.Less than 60 seconds, all resist layers are promptly removed from the surface of this plate fully. Embodiment 4
Three copper foil laminates are carried out hot roll lamination, exposure with DuPont Riston 9020 dry films and in 1% sodium carbonate liquor, develop.To be heated to about 125 °F (about 51.7 ℃) from the stripper of embodiment 1, then first block of plate be immersed in this solution.Less than 60 seconds, all resist layers are promptly removed from the surface of this plate fully.The stirring under about 125 (51.7 ℃) of this solution was made ammonia volatilization in 2 hours.Again second block of plate immersed in this solution.After 60 seconds, resist layer is not removed from the surface of second block of plate as yet fully.Again 10 milliliter of 30% ammonium hydroxide is added in this stripper, and the 3rd block of plate immersed in this solution.Less than 60 seconds, all resist layers are promptly removed from the surface of the 3rd block of plate fully. Comparative Examples 1
Copper foil laminate is carried out hot roll lamination, exposure with DuPont Riston 9020 dry films and in 1% sodium carbonate liquor, develop.Preparation contains the resist layer stripper of the potassium hydroxide of 20 grams per liters.This stripper is heated to about 125 °F (about 51.7 ℃), then this plate is immersed in this solution.After 60 seconds, this resist layer is not removed from the surface of this plate. Comparative Examples 2
Copper foil laminate is carried out hot roll lamination, exposure with DuPont Riston 9020 dry films and in 1% sodium carbonate liquor, develop.Preparation contains the resist layer stripper of the PC-4077 resist layer remover (obtaining from Alpha Metals PC Fab Division) of 10% (volume).This stripper is heated to about 125 °F (about 51.7 ℃), then this plate is immersed in this solution.After 60 seconds, this resist layer is removed from the surface of this plate fully.
To being described in detail of specific embodiments of the present invention, a kind of method of peeling off resist layer of uniqueness has been described out obviously according to preamble.Though disclose specific embodiment in this article in detail, this just for for the purpose of illustrating and propose by embodiment, never means the hereinafter scope of appended claims that limits.Particularly, the inventor considers under the situation of the spirit of the present invention of defined in not breaking away from as claims and scope, may do variously to substitute, change and revise to the present invention.

Claims (20)

1. method of removing the patterning resist layer from substrate, this method comprises following operation:
A) provide a kind of substrate that has the resist layer of patterning from the teeth outwards;
B) provide a kind of resist layer stripper of non-volatility organic compound, this stripper comprises a kind of, as the ammonium ion source of basic remover; With
C) this substrate is stood this stripper and handle time enough, the resist layer of all patternings is removed from this surface.
2. according to the process of claim 1 wherein that the resist layer stripper of this non-volatility organic compound also comprises hydroxyl ion source.
3. according to the method for claim 2, wherein this hydroxyl ion source is selected from potassium hydroxide, NaOH, lithium hydroxide and composition thereof.
4. according to the process of claim 1 wherein that this ammonium ion source comprises ammonia.
5. according to the process of claim 1 wherein that this ammonium ion source comprises ammonium hydroxide.
6. according to the process of claim 1 wherein that this ammonium ion source comprises ammonium salt.
7. according to the method for claim 6, wherein this ammonium salt is selected from hartshorn salt, aminoquinoxaline, ammonium sulfite, ammonium silicate, ammonium formate, ammonium phosphate and composition thereof.
8. according to the process of claim 1 wherein that the resist layer stripper of this non-volatility organic compound also comprises nonvolatile corrosion inhibiter.
9. according to the process of claim 1 wherein that the resist layer stripper of this non-volatility organic compound also comprises antifoaming agent.
10. according to the process of claim 1 wherein that the resist layer stripper of this non-volatility organic compound also comprises defoamer.
11. this substrate is immersed in the stripper according to the process of claim 1 wherein that this treatment process comprises.
12. stripper is sprayed on this substrate according to the process of claim 1 wherein that this treatment process comprises.
13. according to the process of claim 1 wherein that the ammonium ion source in this stripper regularly or is continuously replenished.
14. according to the method for claim 13, wherein compensation process comprises regularly or continuously Ammonia is added in this stripper.
15. according to the method for claim 13, wherein compensation process comprises regularly or continuously alkaline ammonium salt is added in this stripper.
16. according to the method for claim 13, wherein compensation process comprises regularly or continuously ammonia is added in this stripper.
17. according to the process of claim 1 wherein that the pH of this stripper remains on or is higher than about 9.3.
18. according to the process of claim 1 wherein that the pH of this stripper remains on or is higher than about 11.0.
19. according to the process of claim 1 wherein that the pH of this stripper remains on or is higher than about 12.0.
20. according to the process of claim 1 wherein that this strip operation is to carry out under about 80 °F to about 140 °F in temperature.
CN99804505A 1998-02-26 1999-02-01 Resist stripping process Expired - Fee Related CN1129036C (en)

Applications Claiming Priority (2)

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US3115498A 1998-02-26 1998-02-26
US09/031,154 1998-02-26

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CN1129036C true CN1129036C (en) 2003-11-26

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JP (1) JP2002505448A (en)
KR (1) KR20010041221A (en)
CN (1) CN1129036C (en)
TW (1) TW407449B (en)
WO (1) WO1999044101A1 (en)

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Publication number Priority date Publication date Assignee Title
JP3328250B2 (en) * 1998-12-09 2002-09-24 岸本産業株式会社 Resist residue remover
WO2000044034A1 (en) * 1999-01-25 2000-07-27 Speedfam-Ipec Corporation Methods and cleaning solutions for post-chemical mechanical polishing
KR20030007288A (en) * 2002-11-29 2003-01-23 (주) 라모스테크놀러지 Digital player which possesses a e-mail facility and method for processing it
KR100582202B1 (en) * 2003-10-13 2006-05-23 엘지.필립스 엘시디 주식회사 Fabrication apparatus and method of thin film transistor array substrate
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
CN102221791B (en) * 2011-04-29 2014-09-03 西安东旺精细化学有限公司 Photoresist stripper composition
US8975008B2 (en) * 2012-05-24 2015-03-10 Rohm And Haas Electronic Materials Llc Method of removing negative acting photoresists
TWI595332B (en) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 Method for photoresist stripping

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DD143920A1 (en) * 1979-05-24 1980-09-17 Uwe Jungstand EXTRACTS FOR REMOVING POSITIVE PICTURES
JPS60203944A (en) * 1984-03-28 1985-10-15 Mitsubishi Gas Chem Co Inc Method for removing positive type photoresist

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KR20010041221A (en) 2001-05-15
EP1057080A1 (en) 2000-12-06
WO1999044101A1 (en) 1999-09-02
CN1298496A (en) 2001-06-06
JP2002505448A (en) 2002-02-19
TW407449B (en) 2000-10-01

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