CN115261879A - Organic film removing liquid suitable for MSAP (multiple-site amplification process) - Google Patents
Organic film removing liquid suitable for MSAP (multiple-site amplification process) Download PDFInfo
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- CN115261879A CN115261879A CN202210781993.5A CN202210781993A CN115261879A CN 115261879 A CN115261879 A CN 115261879A CN 202210781993 A CN202210781993 A CN 202210781993A CN 115261879 A CN115261879 A CN 115261879A
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- organic
- parts
- msap
- corrosion inhibitor
- propylene glycol
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000008569 process Effects 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 title claims description 9
- 230000003321 amplification Effects 0.000 title description 2
- 238000003199 nucleic acid amplification method Methods 0.000 title description 2
- 150000001412 amines Chemical class 0.000 claims abstract description 26
- 238000005260 corrosion Methods 0.000 claims abstract description 22
- 230000007797 corrosion Effects 0.000 claims abstract description 20
- 239000003112 inhibitor Substances 0.000 claims abstract description 19
- 239000012528 membrane Substances 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 230000000149 penetrating effect Effects 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 101001134276 Homo sapiens S-methyl-5'-thioadenosine phosphorylase Proteins 0.000 claims abstract 9
- 102100022050 Protein canopy homolog 2 Human genes 0.000 claims abstract 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 30
- -1 alkyl quaternary ammonium salt Chemical class 0.000 claims description 17
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 15
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 15
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 11
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 10
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 10
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims description 10
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 5
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 5
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 5
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 5
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 5
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 5
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 5
- JGFBQFKZKSSODQ-UHFFFAOYSA-N Isothiocyanatocyclopropane Chemical compound S=C=NC1CC1 JGFBQFKZKSSODQ-UHFFFAOYSA-N 0.000 claims description 5
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 claims description 5
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 5
- PWLNAUNEAKQYLH-UHFFFAOYSA-N butyric acid octyl ester Natural products CCCCCCCCOC(=O)CCC PWLNAUNEAKQYLH-UHFFFAOYSA-N 0.000 claims description 5
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 5
- 229930182817 methionine Natural products 0.000 claims description 5
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims description 5
- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000600 sorbitol Substances 0.000 claims description 5
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 claims description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- 150000002894 organic compounds Chemical group 0.000 claims description 4
- QFQZKISCBJKVHI-UHFFFAOYSA-N 1,2,3,4,5,6-hexabromocyclohexane Chemical compound BrC1C(Br)C(Br)C(Br)C(Br)C1Br QFQZKISCBJKVHI-UHFFFAOYSA-N 0.000 claims description 2
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 1
- 229920005575 poly(amic acid) Polymers 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052802 copper Inorganic materials 0.000 abstract description 18
- 239000010949 copper Substances 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000001914 filtration Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 239000003513 alkali Substances 0.000 description 7
- 241001268993 Heterochrosis Species 0.000 description 5
- 238000002156 mixing Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000001934 cyclohexanes Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 241000446313 Lamella Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/032—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds
- C23G5/036—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds having also nitrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/024—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
- C23G5/02854—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons characterised by the stabilising or corrosion inhibiting additives
- C23G5/02883—Nitrogen-containing compounds
- C23G5/0289—N-heterocyclics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
- C23G5/02854—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons characterised by the stabilising or corrosion inhibiting additives
- C23G5/02893—Sulfur-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/032—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Detergent Compositions (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The invention relates to an organic membrane removing solution suitable for an MSAP (MSAP) process, which consists of the following components in parts by weight: 5-60 parts of organic amine, 10-20 parts of organic solvent, 1-10 parts of penetrating agent, 0.5-1 part of organic corrosion inhibitor and 50-70 parts of water. The invention has the advantages that: effectively get rid of the water-soluble of different models, half water-soluble dry film, do not bite and corrode the copper, it is little to the substrate influence, dissolve the dry film ability reinforce, reducible double-layered membrane exists, it is clean fast to shell the membrane, will have certain dissolving capacity to the dry film between the tinned wire way, the particle size that the dry film was shelled is effectively controlled, the filtration of being convenient for is detached, does not block up the nozzle, is fit for horizontal fountain membrane machine etc..
Description
Technical Field
The invention relates to an organic membrane removing liquid suitable for an MSAP (multiple advanced poly-p) process, belonging to the field of circuit board cleaning agents.
Background
With the development of multifunction, miniaturization and light weight of electronic products, the design of thin lines is an inevitable trend in circuit board production. Compared with the conventional subtractive process, the MSAP process has the following advantages: 1) The processing capacity of the circuit is higher, and the line width spacing can reach 25 micrometers; 2) The process stability is high; the MSAP process has become the mainstream.
The traditional inorganic alkali solution such as sodium hydroxide, potassium hydroxide and the like cannot meet the processing requirement of fine lines, and the industry people gradually develop novel water-soluble film removing liquid taking organic alkali as a main component. The stripping solution using organic base as the main component has the advantages of high stripping efficiency, weak attack to tin plating and copper surface, large capacity, long maintenance period and the like, so that the water-soluble organic base stripping solution is accepted by more and more PCB manufacturers. The existing inorganic alkali film removing liquid has the problems of large micro-corrosion amount to copper, serious copper surface heterochrosis caused by copper surface oxidation, difficult decomposition, low diffusion speed and uneven distribution.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides an organic film removing solution suitable for an MSAP (multiple independent tandem process), and the technical scheme of the invention is as follows:
an organic membrane removing solution suitable for an MSAP (MSAP) preparation process comprises the following components in parts by weight: 5-60 parts of organic amine, 10-20 parts of organic solvent, 1-10 parts of penetrating agent, 0.5-1 part of organic corrosion inhibitor and 50-70 parts of water.
50 parts of organic amine, 15 parts of organic solvent, 5 parts of penetrating agent, 1 part of organic corrosion inhibitor and 60 parts of water.
The organic amine is one or more of ethanolamine, triethanolamine, diethanolamine or triisopropanolamine which are mixed according to any proportion; the organic amine is also mixed with alkyl quaternary ammonium salt, and the mass ratio of the alkyl quaternary ammonium salt to the organic amine is 1.
The alkyl quaternary ammonium salt is one of tetramethyl ammonium hydroxide, tetramethyl ammonium bromide or tetrabutyl ammonium hydroxide.
The organic solvent is one or more of ethylene glycol, propylene glycol, n-butyl alcohol, isobutanol, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, methyl cyclohexane or hexabromocyclohexane according to any proportion.
The penetrating agent is micromolecular alcohol ether and is formed by mixing one or more of ethylene glycol, ethyl acetate, sorbitol or methyl butyrate according to any proportion.
The organic corrosion inhibitor is organic compound with-NH2or-S-group organic corrosion inhibitor, which is one of benzotriazole, methyl benzotriazole and derivatives thereof, methionine, 3-mercapto-1, 2,4 triazole or 3-amino-5-mercapto-1, 2,4 triazole.
The invention has the advantages that: effectively get rid of the water-soluble of different models, half water-soluble dry film, do not bite and corrode the copper, it is little to the substrate influence, dissolve the dry film ability reinforce, reducible double-layered membrane exists, it is clean fast to shell the membrane, will have certain dissolving capacity to the dry film between the tinned wire way, the particle size that the dry film was shelled is effectively controlled, the filtration of being convenient for is detached, does not block up the nozzle, is fit for horizontal fountain membrane machine etc..
Has the following advantages:
1. the problems that the traditional inorganic alkali film removing liquid has large micro-etching amount to copper and the copper surface has serious heterochrosis caused by oxidation of the copper surface are solved, so that the product yield is improved.
2. The organic alkali is mainly composed of alkyl alcohol amine or alkyl quaternary ammonium salt and a composition thereof, has strong basicity, but does not attack copper surfaces and corrosion-resistant coatings. Compared with inorganic alkali, the organic alkali is not easy to decompose, can diffuse quickly and is distributed evenly.
3. The broken film component added in the invention has good permeation effect, improves stripping speed, and can quickly strip a fine line film stripping plate with the line width less than 25 micrometers. The main component is micromolecule alcohol ether solvent which has good permeability, can dissolve the thickening agent in the dry film, reduce the bonding force between the dry film and copper, accelerate the stripping of the dry film and simultaneously reduce film scraps.
Detailed Description
The invention is further described below in conjunction with specific embodiments, and the advantages and features of the invention will become more apparent as the description proceeds. These examples are illustrative only and do not limit the scope of the present invention in any way. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention, and that such changes and modifications may be made without departing from the spirit and scope of the invention.
Example 1: an organic film removing solution suitable for an MSAP (MSAP) process is composed of the following components in parts by weight: 30 parts of organic amine, 10 parts of organic solvent, 1 part of penetrating agent, 0.5 part of organic corrosion inhibitor and 50 parts of water.
The organic amine is one or more of ethanolamine, triethanolamine, diethanolamine or triisopropanolamine which are mixed according to any proportion; the organic amine is also mixed with alkyl quaternary ammonium salt, the mass ratio of the alkyl quaternary ammonium salt to the organic amine is 1; the alkyl quaternary ammonium salt is one of tetramethyl ammonium hydroxide, tetramethyl ammonium bromide or tetrabutyl ammonium hydroxide.
The organic solvent is one or more of ethylene glycol, propylene glycol, n-butanol, isobutanol, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, methyl cyclohexane or hexabrominated cyclohexane which are mixed according to any proportion.
The penetrating agent is micromolecular alcohol ether and is formed by mixing one or more of ethylene glycol, ethyl acetate, sorbitol or methyl butyrate according to any proportion.
The organic corrosion inhibitor is compound with-NH2or-S-group organic corrosion inhibitor, which is one of benzotriazole, methyl benzotriazole and derivatives thereof, methionine, 3-mercapto-1, 2,4 triazole or 3-amino-5-mercapto-1, 2,4 triazole.
Example 2: an organic film removing solution suitable for an MSAP (MSAP) process is composed of the following components in parts by weight: 5 parts of organic amine, 10 parts of quaternary ammonium salt, 15 parts of organic solvent, 5 parts of penetrating agent, 1 part of organic corrosion inhibitor and 60 parts of water.
The organic amine is one or more of ethanolamine, triethanolamine, diethanolamine or triisopropanolamine which are mixed according to any proportion; the organic amine is also mixed with alkyl quaternary ammonium salt, the mass ratio of the alkyl quaternary ammonium salt to the organic amine is 1; the alkyl quaternary ammonium salt is one of tetramethyl ammonium hydroxide, tetramethyl ammonium bromide or tetrabutyl ammonium hydroxide.
The organic solvent is one or more of ethylene glycol, propylene glycol, n-butanol, isobutanol, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, methyl cyclohexane or hexabrominated cyclohexane which are mixed according to any proportion.
The penetrating agent is micromolecular alcohol ether and is formed by mixing one or more of ethylene glycol, ethyl acetate, sorbitol or methyl butyrate according to any proportion.
The organic corrosion inhibitor is organic compound with-NH2or-S-group organic corrosion inhibitor, methyl benzotriazole andone of the derivatives, methionine, 3-mercapto-1, 2,4 triazole or 3-amino-5-mercapto-1, 2,4 triazole.
Example 3: an organic membrane removing solution suitable for an MSAP (MSAP) preparation process comprises the following components in parts by weight: 60 parts of organic amine, 20 parts of organic solvent, 10 parts of penetrating agent, 1 part of organic corrosion inhibitor and 70 parts of water.
The organic amine is one or more of ethanolamine, triethanolamine, diethanolamine or triisopropanolamine which are mixed according to any proportion; the organic amine is also mixed with alkyl quaternary ammonium salt, and the mass ratio of the alkyl quaternary ammonium salt to the organic amine is 1; the alkyl quaternary ammonium salt accounts for 30 parts by weight; the alkyl quaternary ammonium salt is one of tetramethyl ammonium hydroxide, tetramethyl ammonium bromide or tetrabutyl ammonium hydroxide.
The organic solvent is one or more of ethylene glycol, propylene glycol, n-butanol, isobutanol, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, methyl cyclohexane or hexabrominated cyclohexane which are mixed according to any proportion.
The penetrating agent is micromolecule alcohol ether (which can penetrate into a dry film to expand and break, and finally the adhesive force between the dry film and a substrate disappears, so that the dry film is easy to remove), and is formed by mixing one or more of ethylene glycol, ethyl acetate, sorbitol or methyl butyrate according to any proportion.
The organic corrosion inhibitor is organic compound with-NH2or-S-group organic corrosion inhibitor, which is one of benzotriazole, methyl benzotriazole and derivatives thereof, methionine, 3-mercapto-1, 2,4 triazole or 3-amino-5-mercapto-1, 2,4 triazole.
The invention provides a film removing liquid for stripping a film, which comprises organic amine, an organic solvent, a penetrating agent, a corrosion inhibitor and water. Through the cooperation of above-mentioned component, can play fine peeling off effect to the membrane, have very strong osmotic force, can improve peel off speed, have better striping effect to the intermediate lamella, and do not corrode tin face, gold face, do not attack resistance welding membrane such as green oil, can remove membrane concentration according to different demands and adjust.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered as the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
| Comparative example | Stripping speed/s | Size of membrane debris | Microetching amount/\613m | Heterochromatic condition of copper surface |
| Ethanolamine | 20 | 2 mm | 0.2 | Heterochromatic copper surface |
| Tetramethyl ammonium hydroxide | 600 | 300-500ɥm | 0.1 | Heterochromatic copper surface |
| Example 2 | 20 | 300-500ɥm | Almost has no micro-corrosion to copper | No heterochrosis on copper surface |
At present, most organic film removing products used in PCB factories are ethanolamine matched with quaternary ammonium salt, or copper protective agents are added, and the main defect is that the multiple requirements on micro-etching amount, film scrap size and board heterochrosis during film removing of PCB products are difficult to balance. The product of the invention can realize the control and regulation of the size of the film scrap by regulating the proportion of the penetrating agent and the organic amine component, has high film removal speed, and ensures that the copper surface has no heterochrosis and the micro-etching amount is almost zero by adding the unique copper-protecting component.
Claims (7)
1. An organic film removing liquid suitable for an MSAP (MSAP) process is characterized by comprising the following components in parts by weight: 5-60 parts of organic amine, 10-20 parts of organic solvent, 1-10 parts of penetrating agent, 0.5-1 part of organic corrosion inhibitor and 50-70 parts of water.
2. The organic stripping solution suitable for an MSAP (MSAP) process as claimed in claim 1, wherein the organic amine comprises 50 parts of organic amine, 15 parts of organic solvent, 5 parts of penetrant, 1 part of organic corrosion inhibitor and 60 parts of water.
3. The organic film-removing liquid suitable for the MSAP (mark with P) process as claimed in claim 1 or 2, wherein the organic amine is one or more of ethanolamine, triethanolamine, diethanolamine or triisopropanolamine which are mixed according to any proportion; the organic amine is also mixed with alkyl quaternary ammonium salt, and the mass ratio of the alkyl quaternary ammonium salt to the organic amine is 1.
4. The organic stripping solution as claimed in claim 3, wherein the quaternary alkyl ammonium salt is one of tetramethylammonium hydroxide, tetramethylammonium bromide or tetrabutylammonium hydroxide.
5. The organic film-removing solution suitable for an MSAP (mark-free Polyamic acid) process of claim 4, wherein the organic solvent is one or more selected from ethylene glycol, propylene glycol, n-butanol, isobutanol, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, methyl cyclohexane or hexabromocyclohexane, and is mixed in any proportion.
6. The organic membrane removing solution suitable for the MSAP (mark-free process) process as claimed in claim 4, wherein the penetrating agent is a small molecular alcohol ether, and is one or more of ethylene glycol, ethyl acetate, sorbitol and methyl butyrate, and is mixed according to any proportion.
7. The organic stripping solution as claimed in claim 4, wherein the organic corrosion inhibitor is an organic compound having-NH2or-S-group organic corrosion inhibitor, which is one of benzotriazole, methyl benzotriazole and derivatives thereof, methionine, 3-mercapto-1, 2,4 triazole or 3-amino-5-mercapto-1, 2,4 triazole.
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Application publication date: 20221101 |