CN112840470B - 块状热电元件制造方法 - Google Patents
块状热电元件制造方法 Download PDFInfo
- Publication number
- CN112840470B CN112840470B CN201880098080.5A CN201880098080A CN112840470B CN 112840470 B CN112840470 B CN 112840470B CN 201880098080 A CN201880098080 A CN 201880098080A CN 112840470 B CN112840470 B CN 112840470B
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- CN
- China
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- type
- thermoelectric element
- manufacturing
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- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 239000002245 particle Substances 0.000 claims abstract description 57
- 238000000227 grinding Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 30
- 238000005476 soldering Methods 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 239000008188 pellet Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910002909 Bi-Te Inorganic materials 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001006 Constantan Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QRRWWGNBSQSBAM-UHFFFAOYSA-N alumane;chromium Chemical compound [AlH3].[Cr] QRRWWGNBSQSBAM-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Jigs For Machine Tools (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180120192A KR102130594B1 (ko) | 2018-10-10 | 2018-10-10 | 벌크형 열전소자 제조 방법 |
| KR10-2018-0120192 | 2018-10-10 | ||
| PCT/KR2018/012027 WO2020075890A1 (ko) | 2018-10-10 | 2018-10-12 | 벌크형 열전소자 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112840470A CN112840470A (zh) | 2021-05-25 |
| CN112840470B true CN112840470B (zh) | 2024-06-11 |
Family
ID=70165023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880098080.5A Active CN112840470B (zh) | 2018-10-10 | 2018-10-12 | 块状热电元件制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11404623B2 (ko) |
| EP (1) | EP3866212A4 (ko) |
| JP (1) | JP7158077B2 (ko) |
| KR (1) | KR102130594B1 (ko) |
| CN (1) | CN112840470B (ko) |
| WO (1) | WO2020075890A1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102333422B1 (ko) * | 2020-05-20 | 2021-11-30 | 차진환 | 벌크형 열전 소자 및 그 제조방법 |
| FR3114689B1 (fr) * | 2020-09-29 | 2022-10-14 | Commissariat Energie Atomique | Procédé de fabrication de dispositif thermoélectrique par fabrication additive de peignes à contacter entre eux |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001119077A (ja) * | 1999-10-18 | 2001-04-27 | Seiko Instruments Inc | 熱電素子の製造方法 |
| US6232542B1 (en) * | 1996-11-15 | 2001-05-15 | Citizen Watch Co., Ltd. | Method of fabricating thermoelectric device |
| JP2001274466A (ja) * | 2000-03-28 | 2001-10-05 | Matsushita Electric Works Ltd | 熱電モジュールの製造方法、及び熱電モジュール製造用治具 |
| JP2001320098A (ja) * | 2000-02-29 | 2001-11-16 | Citizen Watch Co Ltd | 熱電素子の製造方法 |
| JP2004072020A (ja) * | 2002-08-09 | 2004-03-04 | Sony Corp | 熱電変換装置及びその製造方法 |
| JP2004296960A (ja) * | 2003-03-28 | 2004-10-21 | Citizen Watch Co Ltd | 熱電素子とその製造方法 |
| JP2005294759A (ja) * | 2004-04-05 | 2005-10-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR20170091386A (ko) * | 2016-02-01 | 2017-08-09 | 엘지이노텍 주식회사 | 열전 소자 및 이의 제조 방법 |
| JP2018137374A (ja) * | 2017-02-23 | 2018-08-30 | 三菱マテリアル株式会社 | 熱電変換モジュール、及び、熱電変換モジュールの製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864875A (ja) * | 1994-08-25 | 1996-03-08 | Sharp Corp | 熱電変換装置の製造方法 |
| JPH08162680A (ja) * | 1994-11-30 | 1996-06-21 | Sharp Corp | 熱電変換装置 |
| KR0155881B1 (ko) | 1995-09-13 | 1998-12-01 | 김광호 | 파티클 평가용 시험챔버와 이를 이용한 파티클 평가 시스템 |
| JP2001255204A (ja) | 2000-03-14 | 2001-09-21 | Miyota Kk | 焦電型赤外線センサ |
| JP2004165367A (ja) | 2002-11-12 | 2004-06-10 | Seiko Instruments Inc | 熱電変換素子とその製造方法 |
| JP4346333B2 (ja) * | 2003-03-26 | 2009-10-21 | 新光電気工業株式会社 | 半導体素子を内蔵した多層回路基板の製造方法 |
| US7531739B1 (en) * | 2004-10-15 | 2009-05-12 | Marlow Industries, Inc. | Build-in-place method of manufacturing thermoelectric modules |
| EP1796182A1 (en) * | 2005-12-09 | 2007-06-13 | Corning SAS | Thermoelectric device |
| KR100805726B1 (ko) | 2006-12-21 | 2008-02-21 | 주식회사 포스코 | 다공성 열전소자의 제조방법 |
| WO2013069347A1 (ja) * | 2011-11-08 | 2013-05-16 | 富士通株式会社 | 熱電変換素子及びその製造方法 |
| KR20170001155A (ko) * | 2015-06-25 | 2017-01-04 | 엘지이노텍 주식회사 | 열전 레그, 이를 포함하는 열전 소자 및 그의 제조 방법 |
| ES2703602T3 (es) | 2016-03-03 | 2019-03-11 | Dow Global Technologies Llc | Composición de polietileno, método para fabricar la misma, y películas fabricadas a partir de la misma |
| DE102017125647B4 (de) * | 2017-11-02 | 2020-12-24 | Infineon Technologies Ag | Thermoelektrische Vorrichtungen und Verfahren zum Bilden von thermoelektrischen Vorrichtungen |
-
2018
- 2018-10-10 KR KR1020180120192A patent/KR102130594B1/ko active IP Right Grant
- 2018-10-12 WO PCT/KR2018/012027 patent/WO2020075890A1/ko unknown
- 2018-10-12 JP JP2021514620A patent/JP7158077B2/ja active Active
- 2018-10-12 CN CN201880098080.5A patent/CN112840470B/zh active Active
- 2018-10-12 US US17/279,559 patent/US11404623B2/en active Active
- 2018-10-12 EP EP18936273.4A patent/EP3866212A4/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6232542B1 (en) * | 1996-11-15 | 2001-05-15 | Citizen Watch Co., Ltd. | Method of fabricating thermoelectric device |
| JP2001119077A (ja) * | 1999-10-18 | 2001-04-27 | Seiko Instruments Inc | 熱電素子の製造方法 |
| JP2001320098A (ja) * | 2000-02-29 | 2001-11-16 | Citizen Watch Co Ltd | 熱電素子の製造方法 |
| JP2001274466A (ja) * | 2000-03-28 | 2001-10-05 | Matsushita Electric Works Ltd | 熱電モジュールの製造方法、及び熱電モジュール製造用治具 |
| JP2004072020A (ja) * | 2002-08-09 | 2004-03-04 | Sony Corp | 熱電変換装置及びその製造方法 |
| JP2004296960A (ja) * | 2003-03-28 | 2004-10-21 | Citizen Watch Co Ltd | 熱電素子とその製造方法 |
| JP2005294759A (ja) * | 2004-04-05 | 2005-10-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR20170091386A (ko) * | 2016-02-01 | 2017-08-09 | 엘지이노텍 주식회사 | 열전 소자 및 이의 제조 방법 |
| JP2018137374A (ja) * | 2017-02-23 | 2018-08-30 | 三菱マテリアル株式会社 | 熱電変換モジュール、及び、熱電変換モジュールの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3866212A4 (en) | 2022-07-06 |
| WO2020075890A1 (ko) | 2020-04-16 |
| KR102130594B1 (ko) | 2020-07-06 |
| US20210399189A1 (en) | 2021-12-23 |
| KR20200040388A (ko) | 2020-04-20 |
| CN112840470A (zh) | 2021-05-25 |
| US11404623B2 (en) | 2022-08-02 |
| JP7158077B2 (ja) | 2022-10-21 |
| JP2022502837A (ja) | 2022-01-11 |
| EP3866212A1 (en) | 2021-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |