CN112778335A - 一类含二唑吲哚并吡咯的稠环化合物及其制备方法与应用 - Google Patents
一类含二唑吲哚并吡咯的稠环化合物及其制备方法与应用 Download PDFInfo
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Abstract
Description
器件感光层 | -1V偏压下光暗比 | -2V偏压下光暗比 |
P3HT:化合物5 | 3.2 | 1.4 |
P3HT:化合物11 | 6 | 2.5 |
P3HT:M1=1:1 | 587 | 112 |
P3HT:M2=1:1 | 356 | 97 |
P1:M1=1:1 | 1414 | 146 |
Claims (10)
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CN201911065770.3A CN112778335B (zh) | 2019-11-04 | 2019-11-04 | 一类含二唑吲哚并吡咯的稠环化合物及其制备方法与应用 |
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CN201911065770.3A CN112778335B (zh) | 2019-11-04 | 2019-11-04 | 一类含二唑吲哚并吡咯的稠环化合物及其制备方法与应用 |
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Cited By (1)
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WO2023210569A1 (ja) * | 2022-04-26 | 2023-11-02 | 東ソー株式会社 | 新規化合物、共役系高分子及びその製造方法、製膜用組成物、有機薄膜、並びに有機半導体素子 |
Citations (3)
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CN109749059A (zh) * | 2017-11-03 | 2019-05-14 | 华南协同创新研究院 | 一种主链含氰基茚酮的稠环n型聚合物及其应用 |
CN110010765A (zh) * | 2012-02-14 | 2019-07-12 | 内克斯特能源技术有限公司 | 使用有机小分子半导体化合物的电子器件 |
CN110156964A (zh) * | 2019-05-31 | 2019-08-23 | 华南理工大学 | 一类含3,4-二氰基噻吩的p-型共轭聚合物及其制备方法与应用 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110010765A (zh) * | 2012-02-14 | 2019-07-12 | 内克斯特能源技术有限公司 | 使用有机小分子半导体化合物的电子器件 |
CN109749059A (zh) * | 2017-11-03 | 2019-05-14 | 华南协同创新研究院 | 一种主链含氰基茚酮的稠环n型聚合物及其应用 |
CN110156964A (zh) * | 2019-05-31 | 2019-08-23 | 华南理工大学 | 一类含3,4-二氰基噻吩的p-型共轭聚合物及其制备方法与应用 |
Non-Patent Citations (2)
Title |
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刘鹏,等: "聚合物光伏材料与器件研究进展", 《中国科学:化学》 * |
黄飞,等: "光电高分子材料的研究进展", 《高分子学报》 * |
Cited By (1)
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WO2023210569A1 (ja) * | 2022-04-26 | 2023-11-02 | 東ソー株式会社 | 新規化合物、共役系高分子及びその製造方法、製膜用組成物、有機薄膜、並びに有機半導体素子 |
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