CN112703584B - 半导体装置、电力变换装置以及半导体装置的制造方法 - Google Patents

半导体装置、电力变换装置以及半导体装置的制造方法 Download PDF

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CN112703584B
CN112703584B CN201980059350.6A CN201980059350A CN112703584B CN 112703584 B CN112703584 B CN 112703584B CN 201980059350 A CN201980059350 A CN 201980059350A CN 112703584 B CN112703584 B CN 112703584B
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electrode
metal film
semiconductor element
solder
semiconductor device
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CN112703584A (zh
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小川翔平
藤野纯司
石山祐介
大岛功
重本拓巳
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

半导体装置具备：基板(10)；半导体元件(21)，配置于基板(10)之上；板状部件(51)，与半导体元件(21)电连接；第一电极(21a)，形成于半导体元件(21)之上，与板状部件(51)通过焊料(41)接合；第二电极(21b)，在半导体元件(21)之上与第一电极(21a)离开间隔地形成，包含能够与焊料(41)形成合金的金属；以及金属膜(21c)，在从板状部件(51)观察半导体元件(21)的俯视时，在从第二电极(21b)观察时在第一电极(21a)侧的区域与第二电极(21b)离开间隔地形成于半导体元件(21)之上，包含能够与焊料(41)形成合金的金属。

Description

半导体装置、电力变换装置以及半导体装置的制造方法
技术领域
本发明涉及半导体装置、电力变换装置以及半导体装置的制造方法。
背景技术
代替在半导体元件的电极和外部导体的连接中通过使用铝等金属线的线键合布线的构造，已知将金属的板状布线部件与半导体元件的电极焊接的半导体装置的构造。通过这样的板状布线构造，能够应对大电流的通电，能够提高电流密度，所以能够使半导体装置小型化(参照例如专利文献1)。
另外，作为使用板状布线部件的半导体装置的制造方法，已知防止将半导体元件的下表面焊料接合到基体板时的回流时飞散的焊料到达半导体元件的上表面并附着的制造方法(参照例如专利文献2)。
现有技术文献
专利文献
专利文献1：日本特开2001-332664号公报
专利文献2：日本特开2016-111255号公报
发明内容
然而，如果设为将板状的布线部件焊接到形成于半导体元件之上的电极的构造，则在对形成于半导体元件之上的电极和板状的布线部件进行焊接时，存在焊料的一部分飞散而附着到形成于半导体元件之上的线布线用电极的可能性，在飞散的焊料附着到线布线用电极的状态下线键合时，存在半导体元件破坏的可能性。
本公开是为了解决如上述的问题而完成的，其目的在于提供在用焊料连接形成于半导体元件之上的电极和板状部件的半导体装置中，抑制飞散的焊料附着到形成于半导体元件之上的线布线用的电极的半导体装置。
本公开所涉及的半导体装置具备基板、半导体元件、板状部件、第一电极、第二电极以及金属膜。半导体元件配置于基板之上。板状部件与半导体元件电连接。第一电极形成于半导体元件之上。第一电极与板状部件通过焊料接合。第二电极在半导体元件之上与第一电极离开间隔地形成。第二电极包含能够与焊料形成合金的金属。金属膜在从板状部件观察半导体元件的俯视时，在从第二电极观察时在第一电极侧的区域中与第二电极离开间隔地形成于半导体元件之上。金属膜包含能够与焊料形成合金的金属。
本公开所涉及的半导体装置具备：基板；半导体元件，配置于基板之上；板状部件，与半导体元件电连接；第一电极，形成于半导体元件之上，与板状部件通过焊料接合；线布线用的第二电极，在半导体元件之上与第一电极离开间隔地形成，包含能够与焊料形成合金的金属；以及金属膜，在半导体元件之上在第一电极与第二电极之间与第一电极和第二电极各自离开间隔地形成，包含能够与焊料形成合金的金属，与第一电极和第二电极不同。
根据本公开所涉及的半导体装置，在通过焊料与和半导体元件电连接的板状部件接合的第一电极与线布线用的第二电极之间，形成包含能够与焊料形成合金的金属的金属膜，从而能够抑制飞散的焊料附着到线布线用的第二电极，能够抑制在由于飞散的焊料附着到第二电极的状态下进行线键合而可能发生的、半导体元件的破坏。
附图说明
图1是示出本发明的实施方式1的半导体装置的俯视图。
图2是示出本发明的实施方式1的半导体装置的剖面图。
图3A是本发明的实施方式1的半导体元件的放大俯视图。
图3B是本发明的实施方式1的半导体元件的放大俯视图。
图3C是本发明的实施方式1的半导体元件的放大俯视图。
图3D是本发明的实施方式1的半导体元件的放大俯视图。
图3E是本发明的实施方式1的半导体元件的放大俯视图。
图3F是本发明的实施方式1的半导体元件的放大俯视图。
图3G是本发明的实施方式1的半导体元件的放大俯视图。
图3H是本发明的实施方式1的半导体元件的放大俯视图。
图3I是本发明的实施方式1的半导体元件的放大俯视图。
图3J是本发明的实施方式1的半导体元件的放大俯视图。
图3K是本发明的实施方式1的半导体元件的放大俯视图。
图3L是本发明的实施方式1的半导体元件的放大俯视图。
图4是示出本发明的实施方式1的半导体装置的变形例的剖面图。
图5是本发明的实施方式1的具有保护膜的半导体元件的放大俯视图。
图6A是示出在本发明的实施方式1的半导体元件之上形成保护膜、电极以及金属膜的制造方法的剖面图。
图6B是示出在本发明的实施方式1的半导体元件之上形成保护膜、电极以及金属膜的制造方法的剖面图。
图6C是示出在本发明的实施方式1的半导体元件之上形成保护膜、电极以及金属膜的制造方法的剖面图。
图7A是示出在本发明的实施方式1的半导体元件之上形成保护膜、电极以及金属膜的制造方法的剖面图。
图7B是示出在本发明的实施方式1的半导体元件之上形成保护膜、电极以及金属膜的制造方法的剖面图。
图7C是示出在本发明的实施方式1的半导体元件之上形成保护膜、电极以及金属膜的制造方法的剖面图。
图8A是示出本发明的实施方式1的半导体装置的制造方法的剖面图。
图8B是示出本发明的实施方式1的半导体装置的制造方法的剖面图。
图8C是示出本发明的实施方式1的半导体装置的制造方法的剖面图。
图8D是示出本发明的实施方式1的半导体装置的制造方法的剖面图。
图8E是示出本发明的实施方式1的半导体装置的其他变形例的制造方法的放大俯视图。
图8F是示出本发明的实施方式1的半导体装置的其他变形例的制造方法的剖面图。
图8G是示出本发明的实施方式1的半导体装置的其他变形例的制造方法的剖面图。
图8H是示出本发明的实施方式1的半导体装置的其他变形例的制造方法的剖面图。
图9是示出本发明的实施方式2所涉及的半导体装置的俯视图。
图10A是示出本发明的实施方式2所涉及的半导体装置的剖面图。
图10B是示出本发明的实施方式2所涉及的半导体装置的变形例的剖面图。
图10C是示出本发明的实施方式2所涉及的半导体装置的变形例的剖面图。
图11是示出应用本发明的实施方式3所涉及的电力变换装置的电力变换系统的结构的框图。
(符号说明)
10：绝缘基板(基板)；11：导体层；21、23：半导体元件；21a：主电极(第一电极)；21a1、21a2：角部；21b：控制电极(第二电极)；21b1、21b2：角部；21c、22c：金属膜；21c1：第一端部；21c2：第二端部；21e1、21e2、21e3、21e4：外周部；22b：温度感测电极(第二电极)；23a：主电极；24：第三电极；25：第四电极；26c：第一金属膜；27c：第二金属膜；28：保护膜；31、33：焊料(接合材料)；41、43：焊料；51：第一引线框架(板状部件)；51a：突出部；52、54：主端子；53：端子板；61、62：第二引线框架；71、72：线布线；80：密封树脂部；90：壳体；100：电源；200：电力变换装置；201：主变换电路；202：半导体装置；203：控制电路；300：负载。
具体实施方式
以下，说明本发明的实施方式。此外，对同一结构附加同一参照编号，不反复其说明。
实施方式1.
说明本发明的实施方式1的半导体装置的结构。图1是示出本发明的实施方式1的半导体装置的俯视图。另外，图2是示出本发明的实施方式1的半导体装置的剖面图。此外，在图1中被密封树脂、引线框架(板状部件)覆盖的部分实际上看不到，但为了说明透过密封树脂、引线框架而显示。
在图1以及图2中，半导体装置主要具备：作为基板的绝缘基板10；半导体元件21、23，配置于绝缘基板10之上；第一引线框架(板状部件)51，与半导体元件21的主电极(第一电极)21a、主电极(第一电极)22a及半导体元件23的主电极23a电连接，流过主电路电流；第二引线框架61，通过线布线71与作为半导体元件21的控制用的控制电极(第二电极)21b电连接，被输入用于控制半导体元件21的控制信号；密封树脂部80，覆盖半导体元件21、23及半导体元件21、23的周边部件；以及壳体90，收容这些结构部件。
绝缘基板10由氮化铝(AlN)等热传导率大的陶瓷基板等绝缘物基板构成，例如，外形尺寸是40mm×25mm，厚度是0.6mm。
绝缘基板10只要得到绝缘性则不限于氮化铝，例如，也可以是氧化铝(Al2O3)或者氮化硅(Si3N4)等陶瓷基板。另外，基板也可以是玻璃环氧基板、金属基体基板等陶瓷以外的基板。
在绝缘基板10的表面设置有由铝(Al)或者铝合金等导电率大的金属形成的导体层11。也可以在绝缘基板10的背面设置由铝(Al)或者铝合金等导电率大的金属形成的导体层(未图示)。导体层11例如由厚度0.3mm的铝形成。表面侧的导体层11以及背面侧的导体层虽然也可以由不同的材料形成，但在由相同的材料形成时，在降低制造成本上也优选。形成于绝缘基板10的导体层11不限于铝，例如，也可以由铜(Cu)、铜合金形成。
在对导体层11和半导体元件21、23进行焊料接合的情况下，导体层11在由铝形成时焊料不会润湿。因此，也可以在铝的表面，将作为焊料能够润湿的金属材料的镍(Ni)(未图示)例如形成厚度5.0μm。在这样形成焊料能够润湿的金属材料的状态下，通过作为接合材料的焊料31、33，接合导体层11和半导体元件21、23。作为焊料能够润湿的金属材料，除了镍以外，也可以是锡(Sn)、金(Au)、银(Ag)等。
导体层11形成有用于使主电路电流在半导体元件21、23中流过的电路图案。半导体元件21、23通过焊料31、33等接合材料与导体层11接合，所以导体层11优选为导电率大的金属。另外，在绝缘基板10的背侧形成导体层(未图示)的情况下，有时通过焊料等接合材料接合将在半导体元件21、23中产生的热向半导体装置的外部排热的散热器(未图示)和背侧的导体层。因此，背侧的导体层也优选为热传导率大的金属。
半导体元件21以及半导体元件23是二极管、IGBT(Insulated Gate BipolarTransistor，绝缘栅双极晶体管)、MOSFET(Metal-Oxide-Semiconductor Field-EffectTransistor，金属氧化物半导体场效应晶体管)等电力用的半导体开关元件、控制用的IC(Integrated Circuit，集成电路)。另外，也可以是SBD(Schottky Barrier Diode，肖特基势垒二极管)、JBS(Junction Barrier Schottky，结势垒肖特基)、晶闸管等整流元件。
在本公开中，说明半导体元件21是由硅(Si)形成的IGBT，半导体元件23是由硅形成的二极管的情况。例如，半导体元件21的外形尺寸是15mm×15mm，厚度是100μm。半导体元件23的外形尺寸是10mm×15mm，厚度是100μm。半导体元件21、23例如也可以由碳化硅(SiC)、氮化镓(GaN)等半导体材料形成。
如图1、图2所示，在本公开中，说明半导体装置将作为IGBT的半导体元件21和作为二极管的半导体元件23具备一对的一合一结构的半导体装置，但也可以是将IGBT和二极管具备二对的二合一结构的半导体装置、具备六对的六合一结构的半导体装置。另外，也可以设为仅具备半导体元件21的半导体装置。也可以是代替IGBT而具备MOSFET等其他半导体开关元件的结构的半导体装置。
作为IGBT的半导体元件21和作为二极管的半导体元件23具备在绝缘基板10上隔着导体层11接合的背面电极(未图示)和设置于背面电极的相反侧的面的表面电极。
在导体层11的接合半导体元件21、23的位置的四角，搭载由线线径为100μm的铝线(未图示)构成的隔件，通过焊料31、33接合导体层11和半导体元件21、23。焊料31、33使用以锡、银以及铜为主成分的Sn/Ag/Cu系焊料。焊料31的外形尺寸是15mm×15mm，焊料33的外形尺寸是15mm×10mm，焊料31、33的接合后的厚度是100～200μm。
作为焊料材料，除此以外，也可以是以锡和银为主成分的Sn/Ag系焊料、以锡和铜为主成分的Sn/Cu系焊料、以锡和铋(Bi)为主成分的Sn/Bi系焊料等。另外，焊料31、33也可以包含锑(Sb)、镍、铟(In)、铋、铝、锌(Zn)等。此外，即使在焊料31、33的材料中包含铅(Pb)仍得到本公开的效果，但包含铅的焊料由于环境负荷高而不优选。
接合导体层11和半导体元件21、23的接合材料不限定于焊料31、33，例如也可以使用银纳米粒子、铜纳米粒子等烧结材料。
隔件除了Al线以外也可以是Cu线。作为隔件的线的线径只要小于接合状态的焊料的厚度，则不限于100μm。另外，隔件只要能够确保最低焊料厚即可，所以也可以将镍球用作隔件。另外，也可以设为不使用隔件而焊料接合的结构。
在半导体元件21之上、即半导体元件21的表面，作为表面电极，形成主电极21a、22a，通过焊料41与第一引线框架51接合。在半导体元件21的主电极21a、22a与半导体元件21的背面电极(未图示)之间，流过主电路电流。另外，在半导体元件23之上、即半导体元件23的表面，作为表面电极，形成主电极23a，通过焊料43与第一引线框架51接合。在作为半导体元件23的表面电极的主电极23a与半导体元件23的背面电极(未图示)之间，流过主电路电流。
主电极21a、22a、23a成为包含能够焊料接合的镍的结构。作为能够焊料接合的金属、即能够与焊料形成合金的金属，除了镍以外，也可以是金、银、铜，主电极21a、22a、23a也可以设为包含镍、金、银、铜的至少一个的结构。
主电极21a、22a是被焊料接合第一引线框架51，流过大电流的主电路电流的电极，面积大于后述控制电极21b、温度感测电极22b。
如图1所示，在半导体元件21之上，与主电极21a、22a各自离开间隔地形成有作为控制信号用的控制电极21b和半导体元件的温度测定用的温度感测电极(第二电极)22b。即，在半导体元件21之上，离开间隔地形成有主电极21a和控制电极21b、主电极21a和温度感测电极22b。在半导体元件21的表面，离开间隔地形成有主电极22a和控制电极21b、主电极22a和温度感测电极22b。
在此，以作为半导体元件21之上的主电极具有主电极21a和主电极22a这2个的例子进行说明，但在连接主电极21a和主电极22a而成的主电极是1个的情况下，离开间隔地形成1个主电极和控制电极21b，离开间隔地形成1个主电极和温度感测电极22b。
控制电极21b和第二引线框架61通过线布线71电连接，根据输入的控制信号，控制主电路电流的导通和切断。另外，温度感测电极22b和第二引线框架62通过线布线72电连接。
线布线71、72例如可以是直径为0.15mm的铝线、被铝覆盖的铜线、或者金线等。线布线71通过线键合与第二引线框架61以及控制电极21b超声波接合。线布线72通过线键合与第二引线框架62以及温度感测电极22b超声波接合。
也可以在半导体元件21的表面，除了控制电极21b、温度感测电极22b以外，为了测定发射极的电流，还设置有发射极电流感测电极等电极。即使在有发射极电流感测电极的情况下，与控制电极21b等同样地，通过线布线电连接。在本公开中，将半导体元件21的表面的电极中的、控制电极21b、温度感测电极22b以及发射极电流感测电极等线布线用的电极总称为第二电极。如图1所示，线布线用的电极在设为沿着半导体元件21的一边配置成一列的结构时，易于超声波接合，所以优选。
在半导体元件21之上，在主电极21a、22a与控制电极21b、温度感测电极22b之间，与主电极21a、22a和控制电极21b、温度感测电极22b各自离开间隔地形成包含作为能够与焊料形成合金的金属的镍的金属膜21c。能够与焊料形成合金的金属是指，还可以称为具有焊料润湿性的金属。
在半导体元件21之上，与第一引线框架51通过焊料41接合的主电极21a、主电极22a与本申请中的第一电极相应。这样，在半导体元件21之上，与第一引线框架51通过焊料41接合的电极有多个的情况下，将与第一引线框架51焊料接合的电极总称为第一电极。
在对第一引线框架51和主电极21a、22a进行焊料接合的工序中，在焊料41熔融时，焊料41取入空气。即使在真空中焊料接合的情况下，焊料41也取入残留的少量的空气。于是，在去掉取入的空气时，有时焊料的一部分飞散而在半导体元件21之上移动。在本公开中，在焊料接合的工序中，在焊料41熔融时，在去掉被焊料取入的空气时飞散的焊料被称为焊料球。
在形成包含能够与焊料形成合金的金属的金属膜21c时，即使在从焊料41释放焊料球的情况下，焊料球与金属膜21c接触，在经由焊料接合工序被冷却时，金属膜21c的至少一部分和与金属膜21c接触的焊料球被合金化。即金属膜21c的至少一部分和与金属膜21c接触的焊料球被接合。
金属膜21c包含能够与焊料形成合金的金属即可，设为包含镍(Ni)、金(Au)、银(Ag)、铜(Cu)的至少一个的结构即可。如果是镍、金、银、铜的至少一个在金属膜21c的最表面的至少一部分露出的结构，则在焊料接合工序中，金属膜21c的最表面的一部分和焊料球接触而合金化，能够使焊料球附着。通过在金属膜21c的最表面形成包含镍、金、银、铜的至少一个的膜而构成，能够更有效地附着焊料球，所以优选。
金属膜21c是焊料球附着用的膜。即，与主电极21a、22a不同，并非与第一引线框架51焊料接合的膜。另外，与控制电极21b、温度感测电极22b等线布线用的电极不同，并非被线布线的膜。
在与第一引线框架51通过焊料41接合的第一电极有多个的情况下，金属膜21c至少形成于与最接近第二电极的第一电极之间。在图1的例子中，示出在与第一引线框架51的延伸方向垂直的方向上作为第一电极的主电极21a、22a排列2个的例子，但例如在第一引线框架51的延伸方向上主电极有多个的情况下，金属膜21c至少形成于最接近控制电极21b、温度感测电极22b的主电极与控制电极21b、温度感测电极22b之间。
在图1、图2中，示出在半导体元件21的表面上形成有主电极21a、22a和金属膜21c的例子，但也可以如后所述，成为在半导体元件21的表面上还具备第三电极24，在第三电极24上形成有主电极21a、22a和金属膜21c的结构。即，也可以设为在半导体元件21的表面与主电极21a、22a之间、和半导体元件21的表面与金属膜21c之间形成有第三电极24的结构。在该情况下，通过设置面积比主电极21a、22a大的第三电极24，能够使电流扩展至半导体元件21的更大的区域。第三电极24既可以是包含作为能够与焊料形成合金的金属的镍、金、银、铜的至少一个的结构，并且也可以是包含作为与焊料不形成合金的金属的铝、铝硅(AlSi)、钛(Ti)的至少一个的结构。
另外，在图1、图2中，示出在半导体元件21的表面上形成有控制电极21b、温度感测电极22b的例子，但也可以如后所述，设为在半导体元件21的表面上还具备与第三电极24离开间隔地设置的第四电极25，在第四电极25上形成有控制电极21b和温度感测电极22b的结构。第四电极25与第三电极24同样地，既可以是包含作为能够与焊料形成合金的金属的镍、金、银、铜的至少一个的结构，并且也可以是包含作为与焊料不形成合金的金属的铝、铝硅(AlSi)、钛(Ti)的至少一个的结构。
图3A至图3L是本发明的实施方式1的半导体元件的放大俯视图。在图中还示出用于说明方向的xyz正交坐标轴。在此，在x轴方向上离开间隔地配置有主电极21a和控制电极21b，并且在x轴方向上离开间隔地配置有主电极22a和温度感测电极22b。成为在y轴方向上排列有主电极21a和主电极22a，同样地，在y轴方向上排列有控制电极21b和温度感测电极22b的结构。此外，图3A至图3L的虚线表示具有第三电极24的情况下的第三电极24的外周以及内周。另外，在图3E以及图3F中，示出半导体元件21的外周部21e1～21e4。
金属膜21c例如如图3A所示，在主电极21a、22a与控制电极21b、温度感测电极22b之间，沿着主电极21a、22a形成，并且沿着控制电极21b和温度感测电极22b形成。即，金属膜21c在作为表面电极的主电极21a、22a与控制电极21b、温度感测电极22b之间直线状地形成。
关于金属膜21c的形状，使得可能从焊料41产生的焊料球附着而能够抑制焊料球附着到控制电极21b等线布线用的电极即可，所以可以是如图3B至图3L所示的形状中的任意形状。
也可以如图3B所示，在主电极21a与控制电极21b之间、和主电极22a与温度感测电极22b之间各自分成金属膜21c和金属膜22c这2个而设置金属膜。例如，可以在与被连结主电极21a的角部21a1和控制电极21b的角部21b1的直线以及连结主电极21a的角部21a2和控制电极21b的角部21b2的直线夹住的范围重叠的位置，作为1个连续膜设置金属膜21c。即，可以在y轴方向上，作为如与连结主电极21a的角部21a1和控制电极21b的角部21b1的直线以及连结主电极21a的角部21a2和控制电极21b的角部21b2的直线这两方交叉的1个连续膜，设置金属膜21c。金属膜22c也可以通过与金属膜21c相同的方法，设置于主电极22a与温度感测电极22b之间。
另外，金属膜21c的形状无需是图3A以及图3B所示的长方形这样的矩形形状，也可以如图3C以及图3D所示，是主电极21a和金属膜21c的x轴方向的最短距离、控制电极21b和金属膜21c的x轴方向的最短距离根据作为排列有主电极21a、22a的方向的y轴方向变化的构造。图3C所示的金属膜21c的平面形状是具有弯曲部的带状、或者之字形形状。图3D所示的金属膜21c的平面形状成为连接向主电极21a、22a侧变凸的2个U字形状的端部的形状。
另外，也可以如图3E以及图3F所示，不仅是主电极21a与控制电极21b之间，进而在从2个方向夹入控制电极21b的位置设置金属膜。具体而言，也可以如图3E所示，金属膜设为具有形成于主电极21a、22a与控制电极21b、温度感测电极22b之间的第一金属膜26c和相对控制电极21b、温度感测电极22b形成于与第一金属膜26c相反的一侧的第二金属膜27c的结构。在该结构中，成为控制电极21b被夹在第一金属膜26c和第二金属膜27c膜之间的结构。换言之，成为在控制电极21b与半导体元件的最接近控制电极21b的外周部21e1之间具备第二金属膜27c的结构。
如图3F所示，在y轴方向上延伸的金属膜21c在其两端具有朝向控制电极21b的一侧延伸的第一端部21c1和朝向温度感测电极22b的一侧延伸的第二端部21c2。控制电极21b和温度感测电极22b成为被夹在第一端部21c1和第二端部21c2之间的结构。换言之，在y轴方向上延伸的金属膜21c的一端具有在x轴方向上延伸至控制电极21b与第2接近控制电极21b的半导体元件21的外周部21e2之间的第一端部21c1。另外，金属膜21c的另一端具有在x轴方向上延伸至温度感测电极22b与第2接近温度感测电极22b的半导体元件21的外周部21e4之间的第二端部21c2。
这样，第一端部21c1、第二端部21c2成为相比于设置于控制电极21b与温度感测电极22b之间，而设置于控制电极21b与半导体元件21的外周部21e2之间和温度感测电极22b与半导体元件21的外周部21e4之间的结构即可。在该结构中，成为从3个方向包围作为线布线用电极的控制电极21b、温度感测电极22b的形状。此外，在此，示出金属膜21c和第一端部21c1、第二端部21c2为连续膜的例子，但也可以设为分成3个的结构。
另外，如图3G所示，金属膜21c还能够设为包围作为线布线用电极的控制电极21b以及温度感测电极22b的形状。在此，示出包围控制电极21b以及温度感测电极22b这两方的结构的例子，但也可以设为用金属膜包围控制电极21b和温度感测电极22b各自的结构。
另外，如图3H所示，金属膜21c是包围作为线布线用电极的控制电极21b以及温度感测电极22b的形状，但也可以设为四角被切去的结构。即，金属膜21c包括以包围作为第二电极的控制电极21b以及温度感测电极22b的方式配置的多个金属膜部分。由此，能够设为后述保护膜28不被分断的状态。其结果，能够抑制保护膜28的剥离。
另外，也可以如图3I所示，设为在四角单括号状地2重地配置金属膜21c的结构。即，金属膜21c也可以包括以包围作为第二电极的控制电极21b以及温度感测电极22b的方式配置的多个金属膜部分21c1(外周侧金属膜部分)和配置于该金属膜部分21c1与控制电极21b以及温度感测电极22b之间的内周侧金属膜部分21c2。由此，不会损害作为焊料飞散对策的功能，而能够抑制保护膜28的剥离。
另外，也可以如图3J所示，主电极22a和金属膜21c通过作为具有比金属膜21c的短边宽度窄的宽度的连接部的露出部21f以表面的方式连接。即，半导体装置也可以具备作为连接金属膜21c和主电极22a的连接部的露出部21f。露出部21f的最小宽度也可以小于主电极22a的最小宽度。由此，对作为焊料飞散对策的功能没有影响。在露出部21f的宽度过大的情况下，存在供给到主电极22a的焊料润湿扩展而引发焊料飞散的可能性。
另外，如图3K所示，即使主电极21a、22a和金属膜21c通过作为处于半导体元件21的中央附近的多个连接部的露出部21f以表面的方式连接，对作为焊料飞散对策的功能也没有影响。图3J以及图3K所示的作为连接部的露出部21f的最小宽度也可以小于金属膜21c的最小宽度。
另外，在如图3J以及图3K等所示主电极21a、22a和金属膜21c通过作为连接部的露出部21f连接的情况下，在如图1所示从作为板状部件的第一引线框架51观察半导体元件21的俯视时，金属膜21c也可以配置于不与第一引线框架51重叠的位置。从不同的观点而言，在金属膜21c中与露出部21f连接的连接部也可以配置于在上述俯视时不与第一引线框架51重叠的位置。或者，金属膜21c也可以配置成在上述俯视时与第一引线框架51部分性地重叠。即，也可以在上述俯视时，相比于第一引线框架51中的控制电极21b侧的端面，金属膜21c的至少一部分位于控制电极21b侧。从不同的观点而言，也可以在上述俯视时，金属膜21c中的控制电极21b侧的端面位于第一引线框架51中的控制电极21b侧的端面与控制电极21b之间。另一方面，主电极21a、22a也可以在上述俯视时配置于与第一引线框架51重叠的位置。主电极21a、22a也可以在上述俯视时仅配置于与第一引线框架51重叠的位置。
另外，如图3L所示，在作为线布线用电极的控制电极21b以及温度感测电极22b配置于半导体元件21的角部的情况下，通过以L字型形状在角部配置金属膜21c，能够得到同样的效果。
在图3A至图3L中，将金属膜21c设为连续膜进行说明，但也可以设为在使焊料球附着的范围，将图3A的金属膜21c在y轴方向、x轴方向上分割成多个的结构。另外，也可以设为将图3A至图3L的结构分别组合而成的结构。
和第一引线框架51接合的主电极21a与控制电极21b之间例如需要隔开大于1.0mm的间隔。这是为了防止在对第二引线框架61以及控制电极21b超声波接合线布线71时使用的接合装置头等机材碰撞到第一引线框架51的干扰。
例如，将图3A所示的金属膜21c的x轴方向的宽度设为0.8mm，将y轴方向的金属膜21c的长度设为10mm。这样，如果宽度是0.8mm，则能够按照防止机材的干扰的1.0mm的间隔，与主电极21a、22a、控制电极21b、以及温度感测电极22b各自离开间隔地设置金属膜21c。即，无需增大半导体元件的尺寸，而能够形成金属膜21c。
在半导体元件21是电力用半导体元件的情况下，在电力用半导体元件的周缘部，形成有终端构造，在终端构造的正上方，无法形成金属膜21c。在半导体元件的小型化的观点中，如图3B所示，可以在比连接主电极21a的角部21a1和角部21a2且在y轴方向上延伸的线靠控制电极21b侧的区域、并且比连接控制电极21b的角部21b1和角部21b2且在y轴方向上延伸的线靠主电极21a侧的区域，形成金属膜21c。另外，如图3A至图3D所示，仅在形成有主电极21a、22a的区域与形成有控制电极21b和温度感测电极22b的区域之间形成金属膜21c的结构更优选。
金属膜21c需要防止可能从主电极21a、22a的焊料41释放的焊料球附着到作为线布线用的电极的控制电极21b、温度感测电极22b，可以设为金属膜21c的y轴方向的长度比控制电极21b或者温度感测电极22b的y轴方向的长度长的结构。另外，x轴方向的长度也如果越长则用于使焊料球附着的面积也越增加，所以可以设为金属膜21c的面积比控制电极21b或者温度感测电极22b的面积大的结构。
关于金属膜21c，只要是能够发挥附着焊料球的功能的范围，则面积无需大，例如，可以相对主电极21a和主电极22a的面积的合计值设为3％以上且20％以下的范围。另外，在具有第三电极24的情况下，相对由图3A至图3L的虚线包围的第三电极24的面积设为3％以上且20％以下的范围即可。
图4是示出本发明的实施方式1的半导体装置的变形例的剖面图。图4所示的半导体装置具备基本上与图1以及图2所示的半导体装置同样的结构，但金属膜21c的结构与图1以及图2所示的半导体装置不同。即，也可以设为以半导体元件21的表面为基准，图4所示的半导体装置中的金属膜21c的高度T2比搭载焊料41的主电极21a、22a的高度高的结构。同样地，也可以设为金属膜21c的高度T2比作为线布线的第二电极的控制电极21b以及温度感测电极22b的高度T1高的结构。通过该结构，能够抑制焊料球附着到控制电极21b以及温度感测电极22b。另外，金属膜21c的高度T2也可以与焊料41的高度等同。即，也可以设为以半导体元件21的表面为基准，使金属膜21c的高度T2高于搭载焊料41的主电极21a、22a的高度、且低于第一引线框架51的高度T3的结构。通过该结构，能够抑制焊料球飞跃金属膜21c而到达控制电极21b或者温度感测电极22b。在这样仅提高金属膜21c的高度T2的情况下，例如，仅在金属膜21c之上成膜，增加高度即可。
作为图1、图2所示的板状的布线部件的第一引线框架51例如由厚度1.0mm的铜或者铜合金形成，与形成于半导体元件21上的主电极21a、22a通过焊料41接合。另外，第一引线框架51与形成于半导体元件23上的主电极23a通过焊料43接合。
第一引线框架51也可以由焊料无法润湿的铝或者铝合金形成，设为在焊料接合部形成有铜、铜合金等焊料能够润湿的金属材料的结构、在焊料接合部的表面形成有镍、金等金属的结构。另外，第一引线框架51也可以使用殷钢等贴合多个金属而成的覆层材料。
在此，作为板状部件，说明为作为板状的布线部件的第一引线框架，但板状部件例如也可以是施加布线图案的印刷基板。
焊料41、43也可以使用以锡、银、以及铜为主成分的Sn/Ag/Cu系焊料。例如，关于分别设置于主电极21a上和主电极22a上的焊料41的外形尺寸的一边的长度，也可以长边的长度是6～9mm、短边的长度是4～5mm。关于焊料43的外形尺寸的一边的长度，也可以长边的长度是9～12mm、短边的长度是6～8mm。接合后的焊料41、43的厚度例如是300～500μm。
焊料41、43还能够与上述焊料31、33同样地，使用以锡和铜为主成分的Sn/Cu系焊料、或者以锡和银为主成分的Sn/Ag系焊料等。
如图1所示，对导体层11用超声波接合等方法接合由铜、铜合金等导电率大的金属形成的端子板53。在端子板53设置有主端子54且被固定到壳体90。由此，半导体元件21、23的背面电极和主端子54被电连接。
在第一引线框架51中，在和与半导体元件21、23接合的一侧相反的一侧的端部，设置有在与外部设备的电连接中使用的主端子52，主端子52被固定到壳体90。
主端子52和主端子54经由导体层11、半导体元件21、23、第一引线框架51电连接，能够在主端子52与主端子54之间流过主电路电流。
第二引线框架61、62由铜或铜合金或者铝或铝合金形成，被固定到壳体90。第二引线框架61、62的一端向半导体装置的外部露出，第二引线框架61成为用于输入控制信号的控制端子。第二引线框架62成为用于测定半导体元件的温度的端子。
在用铝或者铝合金形成第二引线框架61、62的情况下，也可以对在半导体装置的外部露出的控制端子的部分实施镀铜或者镀镍而提高焊料的润湿性。
第二引线框架61的另一端与设置于半导体元件21的表面的控制电极21b通过线布线71电连接。同样地，第二引线框架62的另一端与设置于半导体元件21的表面的温度感测电极22b通过线布线72电连接。
在图2中，以作为板状的布线部件的第一引线框架51和第二引线框架61、62被埋入到壳体90而固定的例子进行说明，但也可以设为第一引线框架51的与和半导体元件21、23接合的一侧相反的一侧的端部或者第二引线框架61的与和线布线71接合的一侧相反的一侧的端部通过焊料、导电性粘接剂与预先形成于壳体的电极端子连接的结构。
壳体90通过PPS(Poly Phenylene Sulfide：聚苯硫醚)树脂形成为框状，包围绝缘基板10的搭载有半导体元件21、23的面的外周，粘接到绝缘基板10。
关于壳体90，只要在焊料41、43的加热熔融时不会由于热而变形，则也可以是PBT(Poly Butylene Terephthalate，聚对苯二甲酸丁二醇酯)等。
密封树脂部80由环氧系的树脂形成，覆盖导体层11、半导体元件21、23、第一引线框架51的一部分、第二引线框架61的一部分、线布线71、72、以及焊料31、33、41、43而绝缘密封。此外，关于形成密封树脂部80的密封树脂，只要能够确保绝缘性，则不限于环氧系的树脂，也可以是液状凝胶等。
利用树脂材料的密封方法除了上述说明的利用壳体90和密封树脂部80的密封方法以外，也可以是利用传递模的密封方法。
接下来，说明半导体元件的表面电极以及金属膜的制造方法。
图5是本发明的实施方式1的具有保护膜的半导体元件的放大俯视图。图6A至图6C、图7A至图7C是示出在本发明的实施方式1的半导体元件之上形成保护膜、电极、以及金属膜的制造方法的剖面图。
图6A至图6C示出在半导体元件21的表面上形成主电极21a、控制电极21b以及金属膜21c的情况，图7A至图7C示出在半导体元件21的表面上形成第三电极24、第四电极25，在第三电极24上形成主电极21a和金属膜21c，在第四电极25上形成控制电极21b的情况。此外，图5的虚线表示第三电极24和第四电极25的外周。
首先，如图6A所示，准备半导体元件21。之后，如图6B所示，作为形成保护膜的保护膜形成工序，在半导体元件21上，形成具有开口部的保护膜28。作为保护膜28，例如能够使用聚酰亚胺膜。即，在半导体元件21之上，形成在与形成主电极21a、控制电极21b、以及金属膜21c的位置对应的位置具有开口部的保护膜28。另外，如图7A所示，准备在表面上形成有第三电极24和第四电极25的半导体元件21。之后，也可以如图7B所示，在形成有第三电极24和第四电极25的半导体元件21之上，形成具有开口部的保护膜28。即，在形成有第三电极24和第四电极25的半导体元件21之上，形成在与形成主电极21a、控制电极21b、以及金属膜21c的位置对应的位置具有开口部的保护膜28。
例如，将作为应成为保护膜28的材料的一个例子的聚酰亚胺等树脂涂敷到半导体元件21之上、或者形成有第三电极24和第四电极25的半导体元件21之上，通过曝光显影工艺，形成开口部。
接下来，如图6C、图7C所示，作为金属成膜工序，以保护膜28为掩模，在与主电极21a、控制电极21b、以及金属膜21c对应的开口部，通过镀敷法，使作为能够与焊料形成合金的金属的镍成膜，形成主电极21a、控制电极21b、以及金属膜21c。主电极21a、控制电极21b、以及金属膜21c的镍的厚度例如设为5.0μm。在该工序中，形成于半导体元件21的表面的保护膜28成为掩模，所以能够通过在与主电极21a、控制电极21b、以及金属膜21c对应的开口部镀敷镍膜，同时地一并形成主电极21a、控制电极21b、以及金属膜21c。此外，也可以以保护膜28为掩模，个别地形成电极21a、控制电极21b、以及金属膜21c。
在图6C中，在通过镀敷法形成应成为主电极21a、控制电极21b、以及金属膜21c的镍膜的情况下，也可以在与主电极21a、控制电极21b、温度感测电极22b、以及金属膜21c对应的开口部，在镀镍前形成铝。另外，在图7C中，在通过镀敷法形成镍膜的情况下，设为第三电极24和第四电极25包含铝的结构即可。
此外，金属成膜方法不限定于镀敷法，也可以是溅射法、电子束蒸镀法等。不论在哪一个情况下，保护膜28都起到掩模的作用，在保护膜28的开口部使金属成膜。
在此，保护膜28设为聚酰亚胺膜，但例如设为环氧树脂等在使金属成膜时作为掩模发挥功能的有机膜即可。另外，保护膜28无需一定残留，而也可以去除。
控制电极21b以及温度感测电极22b通过线布线71、72与作为端子板的第二引线框架61、62电连接，不进行焊料接合，所以无需一定包含镍等能够与焊料形成合金的金属。即，还能够形成主电极21a、22a和金属膜21c，另外形成控制电极21b以及温度感测电极22b。但是，在形成控制电极21b以及温度感测电极22b时，需要另外形成保护膜，工序变得繁杂。但是，也可以设为控制电极21b以及温度感测电极22b也包含与主电极21a以及金属膜21c相同的种类的金属的结构、即控制电极21b以及温度感测电极22b包含能够与焊料形成合金的金属的结构。由此，能够在形成主电极21a和金属膜21c时同时形成控制电极21b以及温度感测电极22b，能够简化制造工序。
另一方面，控制电极21b以及温度感测电极22b通过能够与焊料形成合金的金属成膜，所以存在从焊料41产生的焊料球到达控制电极21b或者温度感测电极22b而合金化的可能性、即附着的可能性。但是，通过形成金属膜21c，能够在使可能从焊料41产生的焊料球到达控制电极21b或者温度感测电极22b之前，与金属膜21c合金化。其结果，能够抑制焊料球到达线布线用的控制电极21b或者温度感测电极22b。
如图5所示，将主电极分成主电极21a和主电极22a这2个区域而形成。在与焊料41接合的区域是1个的情况下，在与半导体元件21相对地配置第一引线框架51时，在倾斜配置第一引线框架51的情况下，有时与焊料41的接合点偏离与焊料41接合的区域的中心，电流变得不均匀。但是，通过将与第一引线框架51经由焊料41接合的区域分成作为2个区域的主电极21a和主电极22a，能够抑制发生上述问题。即，即使在倾斜配置第一引线框架51的情况下，由于与焊料41的接合点被分成2个区域，所以能够抑制电流的不均匀化。
另外，在将主电极分成2个区域而形成时，还有易于控制焊料41的厚度的优点。在焊料41的高度低的(厚度小的)情况(例如接合后的厚度为100μm程度的情况)下，线膨胀系数大的第一引线框架51和线膨胀系数小的半导体元件21接近，在焊料41中可能产生大的热应力。因此，存在利用焊料41的接合部的可靠性降低的可能性，焊料41的高度控制重要。
接下来，说明具有形成有上述的电极等的半导体元件的半导体装置的制造方法。
图8A至图8D是示出本发明的实施方式1的半导体装置的制造方法的剖面图。在此，以具备第三电极24和第四电极25的例子进行说明。另外，为了简化未图示保护膜。
如图8A所示，将形成有表面电极等的半导体元件21的背面电极(未图示)，通过作为接合材料的焊料31，接合到绝缘基板10上的导体层11。同样地，将形成有表面电极的半导体元件23的背面电极(未图示)，通过作为接合材料的焊料33，接合到绝缘基板10上的导体层11。
接下来，如图8B所示，在框状的壳体90的底部配置接合有半导体元件21、23的绝缘基板10，通过硅酮制的粘接材料(未图示)将壳体90粘接固定到绝缘基板10上。
在壳体90中，预先通过嵌件成型，设置有第一引线框架51、第二引线框架61，在壳体90的上部，固定有设置于第一引线框架51的端部的主端子52。在此虽然未图示，在壳体90中，还设置有第二引线框架62。另外，在壳体90中预先还设置有端子板53，设置于端子板53的主端子54被固定到壳体90的上部。
在将壳体90配置到绝缘基板10的预定位置时，第一引线框架51以使与主电极21a、23a的焊料接合部成为与和绝缘基板10接合的半导体元件21、23的主电极21a、23a相对的位置的方式，固定到壳体90。第二引线框架61以使线键合部成为与和绝缘基板10接合的半导体元件21的控制电极21b对应的位置的方式，固定到壳体90。
接下来，作为焊料接合工序，在与绝缘基板10接合的半导体元件21的主电极21a之上，配置板焊料41。在此虽然未图示，在主电极22a之上，也配置板焊料41。另外，在与绝缘基板10接合的半导体元件23的主电极23a之上，配置板焊料43。这样，在半导体元件21的主电极21a之上，配置板焊料41和第一引线框架51，并且在半导体元件23的主电极23a之上，配置板焊料43和第一引线框架51，通过回流炉、热板将板焊料41、43进行加热而使其熔融。这样，将主电极21a、23a和第一引线框架51焊料接合。
在作为接合材料使用焊料31、33的情况下，优选选择焊料41以及43的熔点比焊料31以及33的熔点低的材料。由此，在将半导体元件21、23和第一引线框架51焊料接合时，即使半导体元件21、23和导体层11已经通过焊料31、33接合，焊料31、33也不再熔融。
接下来，作为线布线工序，如图8C所示，在半导体元件21的控制电极21b之上和第二引线框架61之上，用利用超声波接合的线键合，接合线。即，用线布线71对半导体元件21的控制电极21b和第二引线框架61进行电连接。在此虽然未图示，用线布线72对半导体元件21的温度感测电极22b和第二引线框架62进行电连接。
另外，在此虽然未图示，通过超声波接合，将端子板53和设置于绝缘基板10的导体层11接合。利用该超声波接合的接合既可以在作为半导体元件21、23的表面电极的主电极21a、23a和第一引线框架51的焊料接合之前进行，也可以在之后进行。通过以上的焊料接合以及超声波接合，在半导体装置的主端子52与主端子54之间电连接半导体元件21、23。
接下来，如图8D所示，在壳体90内用灌封树脂形成密封树脂部80，对壳体90进行绝缘密封，半导体装置完成。
图8E是示出本发明的实施方式1的半导体装置的其他变形例的制造方法的放大俯视图。图8F至图8H是示出本发明的实施方式1的半导体装置的其他变形例的制造方法的剖面图。在图8E至图8H中，主要示出半导体元件21。图8E至图8H所示的半导体装置的制造方法与图8A至图8D所示的半导体装置的制造方法基本上相同，但半导体元件21的结构与图8A至图8D所示的半导体装置的半导体元件21的结构不同。
即，如图8E所示，在主电极21a、22a中，接近控制电极21b、温度感测电极22b的区域的宽度变窄，相反侧的区域的宽度变宽。从不同的观点而言，在作为第一电极的主电极21a、22a中，接近作为第二电极的控制电极21b以及温度感测电极22b的一侧的端部的宽度小于远离控制电极21b以及温度感测电极22b的一侧的端部的宽度。
通过这样形成主电极21a、22a，能够如图8F所示局部地变更供给到主电极21a、22a的焊料41的高度。具体而言，以使相对接近控制电极21b、温度感测电极22b的区域中的焊料41的高度低于相对远离控制电极21b、温度感测电极22b的区域中的焊料41的高度的方式，形成焊料41。
由此，如图8G所示，在第一引线框架51被搭载到焊料41上时，位于远离控制电极21b、温度感测电极22b的区域的焊料41与第一引线框架51接触。其结果，如图8H所示，主要在远离控制电极21b、温度感测电极22b的一方，焊料41熔融而产生润湿扩展。因此，在控制电极21b、温度感测电极22b中难以发生焊料飞散。
如以上说明，根据本实施方式1，在半导体元件21之上，在与第一引线框架51通过焊料41接合的主电极21a、22a与包含能够与焊料形成合金的金属的线布线用的控制电极21b或者温度感测电极22b之间，设置有与主电极21a、22a和控制电极21b、温度感测电极22b各自离开间隔地形成、且包含能够与焊料形成合金的金属的金属膜21c。
另外，从不同的观点而言，本实施方式1的半导体装置具备：作为基板的绝缘基板10；半导体元件21；作为板状部件的第一引线框架51；作为第一电极的主电极21a、22a；作为第二电极的控制电极21b及温度感测电极22b；以及金属膜21c。半导体元件21配置于绝缘基板10之上。第一引线框架51与半导体元件21电连接。主电极21a、22a形成于半导体元件21之上。主电极21a、22a与第一引线框架51通过焊料41接合。控制电极21b以及温度感测电极22b在半导体元件21之上与主电极21a、22a离开间隔地形成。控制电极21b以及温度感测电极22b包含能够与焊料41形成合金的金属。金属膜21c在从第一引线框架51观察半导体元件21的俯视时，在从控制电极21b以及温度感测电极22b观察时在主电极21a、22a侧的区域，与控制电极21b以及温度感测电极22b离开间隔地形成于半导体元件21之上。金属膜21c包含能够与焊料41形成合金的金属。
在将第一引线框架51和主电极21a、22a焊料接合的工序中，在焊料41熔融时，焊料41取入空气。然后，在去掉取入的空气时，有时产生焊料球，在半导体元件21之上移动。
在该焊料球在半导体元件21之上移动而到达控制电极21b或者温度感测电极22b时，会合金化，在焊料接合工序之后难以去除合金化的焊料球。在焊料球合金化而附着的状态下，通过线键合将线超声波接合到控制电极21b或者温度感测电极22b时，存在半导体元件21被破坏的可能性、线键合的接合面积变小而接合的可靠性降低的可能性。
通过在主电极21a、22a与控制电极21b或者温度感测电极22b之间设置包含能够与焊料形成合金的金属的金属膜21c，在将第一引线框架51和主电极21a、22a焊料接合时，能够使从焊料41产生的焊料球与金属膜21c合金化。其结果，能够抑制焊料球到达线布线用的控制电极21b或者温度感测电极22b。即，焊料球附着到金属膜21c，抑制焊料球到达控制电极21b或者温度感测电极22b，能够抑制半导体元件的破坏。另外，能够抑制由于焊料球附着到控制电极21b或者温度感测电极22b而线键合的接合面积变小，接合的可靠性降低。
在半导体元件21的表面形成有保护膜28的情况下，主电极21a和金属膜21c分别离开间隔地形成于半导体元件21之上，在主电极21a与金属膜21c之间，形成有保护膜28。作为保护膜28，优选形成由焊料的润湿性比金属膜21c低的材料构成的膜。作为保护膜，例如也可以形成作为有机膜的聚酰亚胺膜。成为从主电极21a侧，存在保护膜28、金属膜21c、保护膜28的结构，通过存在如上述的保护膜28，主电极21a上的焊料不会扩展至金属膜21c，能够更可靠地抑制焊料球到达控制电极21b。
进而，考虑在半导体元件21上，作为保护膜28形成有具有开口部的聚酰亚胺膜的情况。在该情况下，相比于由聚酰亚胺膜构成的保护膜28和密封树脂部80的密接性，具有能够与焊料形成合金的金属的金属膜21c和密封树脂部80的密接性更高。因此，通过设置金属膜21c，半导体元件21和密封树脂部80难以剥离，能够提高可靠性。
在半导体元件21上，作为保护膜28形成有具有开口部的聚酰亚胺膜的情况下，在金属成膜工序中，以保护膜28为掩模，在与主电极21a、控制电极21b、以及金属膜21c对应的开口部，使能够与焊料形成合金的金属成膜，形成主电极21a、控制电极21b、以及金属膜21c。通过将保护膜28用作掩模，工艺变得简易。进而，在金属成膜工序中，能够以保护膜28为掩模，在与主电极21a、控制电极21b、以及金属膜21c对应的开口部，通过镀敷法同时地一并形成镍膜。
能够设为金属膜21c和主电极21a的距离比金属膜21c和控制电极21b的距离更近的结构。通过将金属膜21c和控制电极21b的距离确保得更宽，即使在焊料球在金属膜21c中的控制电极21b侧附着的情况下，由于金属膜21c和控制电极21b的间隔宽，所以能够更可靠地抑制焊料到达控制电极21b。
也可以设为以半导体元件21的表面为基准，使金属膜21c的高度高于搭载焊料41的主电极21a、22a的高度的结构。同样地，也可以使金属膜21c的高度高于作为被线布线的第二电极的控制电极21b或者温度感测电极22b的高度。通过该结构，能够抑制焊料球飞跃金属膜21c而到达控制电极21b或者温度感测电极22b。在提高金属膜21c的高度的结构中，在金属膜21c的高度相同的情况下，在金属膜21c和主电极21a的距离接近时，针对朝向上方以更大的角度飞出的焊料球，有向控制电极21b、温度感测电极22b的到达抑制效果，而优选。
另外，如图3C或者图3D所示，在主电极21a和金属膜21c的x轴方向的最短距离、或者控制电极21b和金属膜21c的x轴方向的最短距离根据作为排列有主电极21a、22a的方向的y轴方向变化的构造的情况下，优选在接近控制电极21b的场所，在比控制电极21b侧接近主电极21a的一侧形成金属膜21c。由此，即使在焊料球的附着是金属膜21c的控制电极21b侧的情况下，由于金属膜21c和控制电极21b的间隔宽，所以能够更可靠地抑制焊料球附着到控制电极21b。即，即使在焊料球在金属膜21c的控制电极21b侧附着的情况下，也能够降低焊料附着到控制电极21b的可能性。
通过将金属膜21c设为如图3C或者图3D所示的特征性的构造，能够在进行线键合时用作用于校正半导体元件21的位置偏移、旋转的辨识标志，能够提高线布线工序的位置精度。
另外，如图3E至图3G所示，通过设为控制电极21b被夹在第一金属膜26c和第二金属膜27c膜之间的结构、或者金属膜21c包围控制电极21b的结构，也能够抑制可能从焊料41产生的焊料球附着到控制电极21b，并且抑制可能从焊料31产生的焊料球附着、即焊料球从半导体元件21之下附着到控制电极21b。
实施方式2.
说明本发明的实施方式2所涉及的半导体装置的结构。图9是示出本发明的实施方式2所涉及的半导体装置的俯视图。另外，图10A至图10C是示出本发明的实施方式2所涉及的半导体装置的剖面图。在图中还示出用于说明方向的xyz正交坐标轴。
在实施方式2中，第一引线框架51的顶端的结构与实施方式1不同。此外，在实施方式2中，以不形成第三电极24以及第四电极25的例子进行说明。如图10A所示，在第一引线框架51的顶端设置有向绝缘基板10的方向突出的突出部51a。突出部51a相对第一引线框架51向z轴方向、即垂直方向折弯而形成。
另外，突出部51a也可以如图10B以及图10C所示，设为相对第一引线框架51，从垂直方向具有角度地折弯，即相对第一引线框架51具有倾斜的结构。具体而言，如图10B所示，突出部51a也可以以随着接近半导体元件21而接近控制电极21b的方式，相对第一引线框架51的延伸方向倾斜。另外，也可以如图10C所示，突出部51a以随着接近半导体元件21而远离控制电极21b的方式，相对第一引线框架51的延伸方向倾斜。
如图9所示，突出部51a在从与绝缘基板10的设置半导体元件21的面垂直的方向观察时，位于主电极21a与金属膜21c之间。即，在从上侧观察半导体元件21的俯视时、即在从第一引线框架51观察半导体元件21的俯视时，突出部51a位于主电极21a与金属膜21c之间。同样地，突出部51a位于主电极22a与金属膜21c之间。与图9对应的剖面图是图10A，突出部51a位于主电极21a与金属膜21c之间的空间。
另外，也可以设为突出部51a在从与绝缘基板10的设置半导体元件21的面垂直的方向观察时，位于主电极21a与控制电极21b之间的结构。在该情况下，根据使焊料球附着到金属膜21c的观点，在从第一引线框架51观察半导体元件21的俯视时突出部51a的至少一部分设为与金属膜21c重叠的位置的结构更优选。
在突出部51a位于主电极21a与金属膜21c之间的情况下，半导体元件21的表面与突出部51a之间的间隔优选为0.1mm以下。在形成有保护膜的情况下，保护膜与突出部51a之间的间隔优选为0.1mm以下。另外，也可以半导体元件21的表面或者保护膜和突出部51a相接。
在从与绝缘基板10的设置半导体元件21的面垂直的方向观察时，在突出部51a的至少一部分与金属膜21c重叠的情况下，金属膜21c与突出部51a之间的间隔优选为0.1mm以下。另外，也可以金属膜21c和突出部51a相接。
突出部51a将第一引线框架51的顶端部分折弯而形成。除了利用折弯的形成方法以外，还能够通过半冲切加工形成突出部51a。
另外，通过将作为与第一引线框架51不同的部件的一个例子的金属部件接合或者粘接到第一引线框架51的顶端部分，也能够形成突出部51a。通过将作为上述部件的一个例子的树脂部件粘接到第一引线框架51的顶端部分，也能够形成突出部51a。
如以上说明，根据本实施方式2，在第一引线框架51的顶端，设置有向半导体元件21侧突出的突出部51a。
在将第一引线框架51和主电极21a、22a焊料接合的工序中，有时在焊料41熔融时从焊料41产生焊料球。在该情况下，还设想以飞跃金属膜21c的角度释放焊料球的情况。即使在焊料球以如飞跃金属膜21c而附着到控制电极21b的角度飞出的情况下，也能够通过突出部51a，使焊料球附着到突出部51a、或者使焊料球向半导体元件21的表面落下。在焊料球通过突出部51a向半导体元件21的表面落下的情况下，在落下的场所凝固即可，但考虑保持熔融状态在半导体元件21的表面滚动并到达控制电极21b、温度感测电极22b而形成合金的情况。但是，即使在该情况下，通过形成于主电极21a、22a与控制电极21b以及温度感测电极22b之间的金属膜21c的存在，能够抑制焊料球附着到控制电极21b、温度感测电极22b。
在第一引线框架51的顶端具有突出部51a的结构中，能够通过利用突出部51a的锚定效应，提高密封树脂部80和第一引线框架51的密接性，能够提供可靠性优良的模块。
在突出部51a与金属膜21c相接的情况下，能够通过突出部51a的高度，调整第一引线框架51和半导体元件21的距离、第一引线框架51和绝缘基板10的距离，能够易于调整主电极21a上的焊料的厚度。
另外，在上述图9以及图10A～图10C所示的结构中，也可以采用如图3J或者图3K所示，金属膜21c与主电极21a以及主电极22a的至少任一方通过作为连接部的露出部21f连接的结构。
实施方式3.
在本实施方式中，将上述实施方式1或者2所涉及的半导体装置应用于电力变换装置。本公开不限定于特定的电力变换装置，但以下，作为实施方式3，说明将本公开应用于三相的逆变器的情况。
图11是示出应用本实施方式的电力变换装置的电力变换系统的结构的框图。
图11所示的电力变换系统包括电源100、电力变换装置200、负载300。电源100是直流电源，对电力变换装置200供给直流电力。电源100能够由各种电源构成，例如，既可以由直流系统、太阳能电池、蓄电池构成，也可以由与交流系统连接的整流电路或者AC/DC转换器构成。另外，也可以由将从直流系统输出的直流电力变换为预定的电力的DC/DC转换器构成电源100。
电力变换装置200是连接于电源100与负载300之间的三相的逆变器，将从电源100供给的直流电力变换为交流电力，对负载300供给交流电力。电力变换装置200如图11所示，具备：主变换电路201，将直流电力变换为交流电力而输出；以及控制电路203，将控制主变换电路201的控制信号输出给主变换电路201。
负载300是通过从电力变换装置200供给的交流电力驱动的三相的电动机。此外，负载300不限于特定的用途，是搭载于各种电气设备的电动机，例如被用作面向混合动力汽车、电动汽车、铁路车辆、电梯或者空调设备的电动机。
以下，详细说明电力变换装置200。主变换电路201具备开关元件和续流二极管(未图示)，通过开关元件开关，将从电源100供给的直流电力变换为交流电力，供给到负载300。主变换电路201的具体的电路结构有各种例子，但本实施方式的主变换电路201是2电平的三相全桥电路，能够由6个开关元件和与各个开关元件逆并联的6个续流二极管构成。主变换电路201的各开关元件、各续流二极管由上述实施方式1或者2中的任意实施方式所涉及的半导体装置202构成。关于6个开关元件，针对每2个开关元件串联连接而构成上下支路，各上下支路构成全桥电路的各相(U相、V相、W相)。而且，各上下支路的输出端子、即主变换电路201的3个输出端子与负载300连接。
另外，主变换电路201具备驱动各开关元件的驱动电路(未图示)，但驱动电路既可以内置于半导体装置202，也可以是与半导体装置202独立地具备驱动电路的结构。驱动电路生成驱动主变换电路201的开关元件的驱动信号，供给到主变换电路201的开关元件的控制电极。具体而言，依照来自后述控制电路203的控制信号，将使开关元件成为导通状态的驱动信号和使开关元件成为截止状态的驱动信号输出给各开关元件的控制电极。在将开关元件维持为导通状态的情况下，驱动信号是开关元件的阈值电压以上的电压信号(导通信号)，在将开关元件维持为截止状态的情况下，驱动信号成为开关元件的阈值电压以下的电压信号(截止信号)。
控制电路203以对负载300供给期望的电力的方式，控制主变换电路201的开关元件。具体而言，根据应供给到负载300的电力，计算主变换电路201的各开关元件应成为导通状态的时间(导通时间)。例如，能够通过根据应输出的电压调制开关元件的导通时间的PWM(脉冲宽度调制：Pulse Width Modulation)控制，控制主变换电路201。而且，在各时间点，以向应成为导通状态的开关元件输出导通信号，向应成为截止状态的开关元件输出截止信号的方式，向主变换电路201具备的驱动电路输出控制指令(控制信号)。驱动电路依照该控制信号，向各开关元件的控制电极输出导通信号或者截止信号作为驱动信号。
在本实施方式的电力变换装置中，作为主变换电路201的开关元件和续流二极管，应用实施方式1或者2所涉及的半导体装置，所以能够提高可靠性。
在本实施方式中，说明将本公开应用于2电平的三相逆变器的例子，但本公开不限于此，能够应用于各种电力变换装置。在本实施方式中，设为2电平的电力变换装置，但也可以是3电平、多电平的电力变换装置，在对单相负载供给电力的情况下，也可以将本公开应用于单相的逆变器。另外，在对直流负载等供给电力的情况下，还能够将本公开应用于DC/DC转换器、AC/DC转换器。
另外，应用本公开的电力变换装置不限定于上述负载是电动机的情况，例如，既能够用作放电加工机、激光加工机或者感应加热烹调器、非接触器供电系统的电源装置，进而也能够用作太阳能发电系统、蓄电系统等的功率调节器。
应认为本次公开的实施方式在所有方面为例示而不非限制性的。只要不存在矛盾，也可以组合本次公开的实施方式的至少2个。本发明的范围并非由上述说明示出而由权利要求书示出，意图包括与权利要求书均等的意义以及范围内的所有变更。

Claims (18)

1.一种半导体装置，具备：
基板；
半导体元件，配置于所述基板之上；
板状部件，与所述半导体元件电连接；
第一电极，形成于所述半导体元件之上，与所述板状部件通过焊料接合；
第二电极，在所述半导体元件之上与所述第一电极离开间隔地形成，包含能够与所述焊料形成合金的金属；以及
金属膜，在从所述板状部件观察所述半导体元件的俯视时，在从所述第二电极观察时在所述第一电极侧的区域与所述第二电极离开间隔地形成于所述半导体元件之上，包含能够与所述焊料形成合金的金属，
所述半导体装置具备连接所述金属膜和所述第一电极的连接部，
所述连接部的最小宽度小于所述第一电极的最小宽度。
2.根据权利要求1所述的半导体装置，其中，
所述金属膜包含Ni、Au、Ag、Cu的至少一个。
3.根据权利要求1所述的半导体装置，其中，
所述第一电极、所述第二电极以及所述金属膜包含相同的种类的金属。
4.根据权利要求2所述的半导体装置，其中，
所述第一电极、所述第二电极以及所述金属膜包含相同的种类的金属。
5.根据权利要求1至4中的任意一项所述的半导体装置，其中，
在所述半导体元件的表面上还具备第三电极，在所述第三电极之上形成有所述第一电极和所述金属膜。
6.根据权利要求1至4中的任意一项所述的半导体装置，其中，
在所述半导体元件之上还具备具有开口部的保护膜，在所述开口部形成有所述第一电极、所述第二电极以及所述金属膜。
7.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述金属膜具有：
第一金属膜，形成于所述第一电极与所述第二电极之间；以及
第二金属膜，相对所述第二电极形成于与所述第一金属膜相反的一侧。
8.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述金属膜在两端具有朝向所述第二电极的一侧延伸的第一端部和第二端部，所述第二电极被夹在所述第一端部和所述第二端部之间。
9.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述金属膜包围所述第二电极。
10.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述金属膜包括以包围所述第二电极的方式配置的多个金属膜部分。
11.根据权利要求10所述的半导体装置，其中，
所述金属膜包括配置于所述多个金属膜部分与所述第二电极之间的内周侧金属膜部分。
12.根据权利要求1所述的半导体装置，其中，
所述连接部的所述最小宽度小于所述金属膜的最小宽度。
13.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述金属膜的高度以所述半导体元件的表面为基准而高于所述第一电极的高度且低于所述板状部件的高度。
14.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述板状部件在顶端具有向所述基板的方向突出的突出部，在从与所述基板的设置所述半导体元件的面垂直的方向观察时，所述突出部位于所述第一电极与所述第二电极之间。
15.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述板状部件在顶端具有向所述基板的方向突出的突出部，
在从与所述基板的设置所述半导体元件的面垂直的方向观察时，所述突出部的至少一部分与所述金属膜重叠。
16.根据权利要求1至4中的任意一项所述的半导体装置，其中，
在所述第一电极中，接近所述第二电极的一侧的端部的宽度小于远离所述第二电极的一侧的端部的宽度。
17.一种电力变换装置，具备：
主变换电路，具有权利要求1至16中的任意一项所述的半导体装置，该主变换电路变换被输入的电力而输出；以及
控制电路，将控制所述主变换电路的控制信号输出给所述主变换电路。
18.一种半导体装置的制造方法，该半导体装置具备：
基板；
半导体元件，配置于所述基板之上；
板状部件，与所述半导体元件电连接；
第一电极，形成于所述半导体元件之上，与所述板状部件通过焊料接合；
第二电极，在所述半导体元件之上与所述第一电极离开间隔地形成；以及
金属膜，在从所述板状部件观察所述半导体元件的俯视时，在从所述第二电极观察时在所述第一电极侧的区域与所述第二电极离开间隔地形成于所述半导体元件之上，
所述半导体装置的制造方法具备：
保护膜形成工序，在所述半导体元件之上形成在与形成所述第一电极、所述第二电极及所述金属膜的位置对应的位置具有开口部的保护膜；
金属成膜工序，以所述保护膜为掩模，在所述开口部使能够与所述焊料形成合金的金属成膜，形成所述第一电极、所述第二电极及所述金属膜；
焊料接合工序，在所述第一电极之上配置所述焊料和所述板状部件，对所述焊料进行加热而接合所述第一电极和所述板状部件；以及
线布线工序，在所述第二电极之上接合线。
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