CN112605486A - 一种超薄焊接垫片及制备方法、焊接方法与半导体器件 - Google Patents

一种超薄焊接垫片及制备方法、焊接方法与半导体器件 Download PDF

Info

Publication number
CN112605486A
CN112605486A CN202011493022.8A CN202011493022A CN112605486A CN 112605486 A CN112605486 A CN 112605486A CN 202011493022 A CN202011493022 A CN 202011493022A CN 112605486 A CN112605486 A CN 112605486A
Authority
CN
China
Prior art keywords
welding
solder
ultra
support sheet
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011493022.8A
Other languages
English (en)
Inventor
华菲
米娜·雅玛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Shijie Electronic Co ltd
Original Assignee
Ningbo Shijie Electronic Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningbo Shijie Electronic Co ltd filed Critical Ningbo Shijie Electronic Co ltd
Priority to CN202011493022.8A priority Critical patent/CN112605486A/zh
Publication of CN112605486A publication Critical patent/CN112605486A/zh
Priority to PCT/CN2021/137559 priority patent/WO2022127748A1/zh
Priority to US18/258,143 priority patent/US20240051051A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/08—Soldering by means of dipping in molten solder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/206—Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/29076—Plural core members being mutually engaged together, e.g. through inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29105—Gallium [Ga] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29157—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/2916—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83815—Reflow soldering

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Gasket Seals (AREA)

Abstract

本申请实施例提供一种超薄焊接垫片及制备方法、焊接方法与半导体器件，涉及焊片领域。超薄焊接垫片包括：内部支撑结构，以及覆盖于内部支撑结构表面的焊料层，焊料层是采用焊料液均匀附着于内部支撑结构的表面而形成的。超薄焊接垫片的制备方法包括以下步骤：将经过表面处理工艺后的内部支撑结构浸入焊料液中，再取出、冷却。基于上述的超薄焊接垫片的焊接方法是将超薄焊接垫片放置于待焊接的焊接面之间，再进行回流焊接，形成半导体器件。该超薄焊接垫片平整、无翘曲，焊料均匀，单层厚度最小仅为5微米，能够满足高精密焊接的需求。

Description

一种超薄焊接垫片及制备方法、焊接方法与半导体器件
技术领域
本申请涉及焊片领域，具体而言，涉及一种超薄焊接垫片及制备方法、焊接方法与半导体器件。
背景技术
随着5G和大数据时代的不断推进和发展，大功率、高性能、高集成度的大尺寸芯片需求量增加，对芯片的封装方式也提出了更高的要求。在大模组的表面组装技术(SMT，Surface Mount Technology)过程中，或大芯片的封装过程中，需要进行大面积焊接，本技术领域一般是通过焊片实现高良率，均匀焊接的大面积焊接。
但是常规由焊料组成的焊片经常会出现焊接面倾斜和焊接厚度不均匀的现象，在焊接最薄处的边缘，由于温度变化和焊接模块的热涨冷缩的不同，导致应力集中，进而导致断裂和产品早期失效。为了解决上述问题，通过使用焊料层与嵌入其中的金属网组合形成带有金属网的焊料片，金属网用作支撑片可以在一定程度上减弱焊接面的倾斜和不均匀的问题。但是通常的带有金属网的焊料片是由焊料层和金属网层压合而成，该焊料条的单层厚度比较大，无法满足高密度焊接的需要，而且这种焊料条由于需要卷成卷保存，裁切后可能会存在一定的翘曲，在回流焊接时，不平整的焊料条容易出现气孔，无法保证高精密焊接的质量。
发明内容
本申请实施例的目的在于提供一种超薄焊接垫片及制备方法、焊接方法与半导体器件，该垫片平整、无翘曲，焊料均匀，单层厚度最小仅为5微米，能够满足高精密焊接的需求。
第一方面，本申请实施例提供了一种超薄焊接垫片，其包括：内部支撑结构，以及覆盖于内部支撑结构表面的焊料层，焊料层是采用焊料液均匀附着于内部支撑结构的表面而形成的，焊料层的熔点低于内部支撑结构的熔点。
在上述技术方案中，超薄焊接垫片包括内部支撑结构和覆盖于内部支撑结构表面的焊料层，焊料层是在内部支撑结构的表面浇注附着一定厚度的焊料液而形成的，形成的超薄焊接垫片平整、无翘曲；通过引入内部支撑结构，可以将原本大厚度的焊锡层分成小厚度的焊料层，同时内部支撑结构还可以在回流焊接时提供支撑作用，焊料层熔化而内部支撑结构不会熔化，从而减少该超薄焊接垫片在回流焊接时的不均匀性，使用该超薄焊接垫片可以保证大面积焊接的厚度均匀性，提高产品的可靠性。
在一种可能的实现方式中，内部支撑结构为平整的支撑片；可选地，支撑片的厚度为3-450μm。
在上述技术方案中，本申请采用平整的支撑片作为支撑结构，形成的超薄焊接垫片平整、无翘曲；采用附着焊料液的方式形成焊料层，能够形成厚度足够小的焊料层，而且焊料均匀，能够满足高精密焊接的需求。
在一种可能的实现方式中，超薄焊接垫片为平整结构；可选地，超薄焊接垫片的单片厚度为10-1000um。
在上述技术方案中，平整结构的超薄焊接垫片能够避免卷状产品而造成的翘曲，从而超薄焊接垫片的每个焊接点的状态是一致的，实现高精密焊接。另外，采用附着焊料液的方式在支撑片的表面形成焊料层组成的超薄焊接垫片的厚度最小可以仅为10微米，由于工艺区别，该超薄焊接垫片的厚度必然会小于直接采用固体的焊料层和金属网复合在一起形成的带有金属网的焊料条。
在一种可能的实现方式中，内部支撑结构的材质为金属；可选地，内部支撑结构的材质为铜及铜合金，镍合金、铁合金，铁镍合金，铁镍钴合金和不锈纲中的一种。
在上述技术方案中，常用金属支撑片的材质为自铜及铜合金，镍合金、铁合金，铁镍合金，铁镍钴合金和不锈纲等，在回流焊接的通常工艺温度下不会熔化，实现支撑作用，适合各种封装环境。
在一种可能的实现方式中，支撑片为无孔的支撑片。
在上述技术方案中，无孔的支撑片能够保证支撑片的平整性，从而能够附着焊料液形成平整的超薄焊接垫片，避免采用编织形成的金属网，因其表面不平整而导致无法形成平整的垫片。
在一种可能的实现方式中，支撑片为有孔的支撑片，有孔的支撑片是在无孔的支撑片上开孔形成的。
在上述技术方案中，在无孔的支撑片上开孔形成的有孔的支撑片能够保证支撑片的平整性，从而能够附着焊料液形成平整的超薄焊接垫片，也可采用编织形成的金属网，通过辊压使之平整，和附着焊料液形成平整的超薄焊接垫片。而且有孔和网孔的支撑片便于附着焊料液，而且孔内填充焊料液能够增加超薄焊接垫片的焊料量，保证支撑片和焊料层紧密一体。
在一种可能的实现方式中，孔的孔径小于200μm，孔的形状为三角形、正方形、长方形、六边形或不规则图形。在上述技术方案中，孔的形状灵活多样。
在一种可能的实现方式中，支撑片为网状支撑片或任何连续的支撑结构；可选地，支撑片或支撑结构是由不同直经金属线编织或不同直经金属线和球形结构编织而成的网状支撑片。
在上述技术方案中，编的图案是灵活多样的，其最大空隙为200微米。
在一种可能的实现方式中，焊料为可焊材料；可选地，焊料选自锡和锡基焊料，铟和铟基焊料，镓和镓基焊料，锡铋焊料，锡铟焊料和其他钎焊材料中的一种。
在上述技术方案中，焊锡材料容易形成焊料液和焊料层，而且焊锡材料在回流焊接的通常工艺温度下熔化，实现焊接，适合各种封装环境。
第二方面，本申请实施例提供了一种第一方面提供的超薄焊接垫片的制备方法，其包括以下步骤：将经过表面处理工艺后的内部支撑结构浸入焊料液中，再取出、冷却。
在上述技术方案中，将内部支撑结构浸入焊料液中，再取出、冷却能够形成厚度足够小的焊料层，能够形成焊料均匀，且平整的超薄焊接垫片，该超薄焊接垫片直接应用或裁切后应用，相比于缠绕成卷再在应用场所裁切成特定规格的方式，具有更好的平整度和焊接应用时的均一性。
在一种可能的实现方式中，内部支撑结构为平整的支撑片，支撑片浸入焊料液的方式：将支撑片以垂直于焊料液液面的方向插入焊料液中，浸入时间根据内部支撑结构和焊料的不同，可以是1秒到几小时；
和/或，支撑片的表面处理工艺包括依次进行的如下步骤：清洗液清洗、烘干、活化、水洗、溶剂浸润和烘干；可选地，清洗液选自IPA、乙醇、甲烷，丙酮和其他金属清洗液中的一种；活化采用的酸洗活化液是有机酸和/或无机酸。
在上述技术方案中，按照上述浸入方式浸入支撑片，可以保证焊料液均匀包裹于支撑片的表面；经过上述表面处理的支撑片，可以全方位的接触熔融的焊料液，焊料液均匀浇注附着在支撑片表面，可以做到无空洞，从而保证焊接应用时无气孔。
在一种可能的实现方式中，将2片或多片支撑片叠合在一起同时浸入焊料液中，再取出、冷却；
或者，将支撑片多次反复浸入焊料液中，再取出、冷却。
在上述技术方案中，上述方式可以制成比较厚的焊接垫片。
在一种可能的实现方式中，还包括辊压步骤。
在上述技术方案中，辊压可以用于使表面平整，并达到所期望的焊接垫片厚度。
第三方面，本申请实施例提供了一种基于第一方面提供的超薄焊接垫片的焊接方法，将超薄焊接垫片放置于待焊接的焊接面之间，再进行回流焊接，形成封装结构。
在上述技术方案中，超薄焊接垫片平整、无翘曲，且焊料均匀，放置于待焊接的焊接面，比如待封装部件和基板之间进行回流焊接时，超薄焊接垫片与待封装部件、基板接触的每个焊接点的状态是一致的，从而实现待封装部件和基板之间的高精密焊接，完成封装。
在一种可能的实现方式中，将两层或者两层以上的超薄焊接垫片叠合在一起使用。
在上述技术方案中，超薄焊接垫片可以单层使用，满足高精度焊接需求，还可以多层叠合使用，适用范围广。
在一种可能的实现方式中，焊接面的表面为金属表面，可选地，金属表面为铜、镍/金和其他可焊接金属中的一种。
第四方面，本申请实施例提供了一种半导体器件，包括采用第一方面提供的超薄焊接垫片焊接形成的封装结构。
在上述技术方案中，半导体器件的应用范围广，稳定性好。
在一种可能的实现方式中，半导体器件为集成电路芯片封装，应用于芯片和载板，芯片和芯片，载板和载板，模组和模组，芯片和模组，载板和模组，以及芯片、模组、载板和散热片任何组合的焊接中的一种；
或者，半导体器件为集成电路芯片封装的散热，应用于芯片和散热板的焊接；
或者，半导体器件为IGBT模块。
在上述技术方案中，IGBT模块满足大功率、高性能、高集成度的芯片需求。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对本申请实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1为本申请实施例提供的一种超薄焊接垫片的制备方法的工艺流程图。
图标：100-焊料液；200-支撑片；300-复合支撑片。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将对本申请实施例中的技术方案进行清楚、完整地描述。实施例中未注明具体条件者，按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者，均为可以通过市售购买获得的常规产品。
下面对本申请实施例的超薄焊接垫片及制备方法、焊接方法与半导体器件进行具体说明。
本申请实施例提供一种超薄焊接垫片，其包括：内部支撑结构，一般为平整的支撑片，以及覆盖于内部支撑结构表面，还可以会渗透进内部支撑结构内部的焊料层，焊料层是采用焊料液均匀附着于内部支撑结构的表面而形成的，焊料层的熔点低于内部支撑结构的熔点。本实施例的超薄焊接垫片为平整结构；超薄焊接垫片的单片厚度为5微米-1毫米，最小可以为5微米，比如单片厚度为10微米、20微米、30微米、40微米、50微米、100微米、200微米，300微米，500微米，1毫米等等。本申请中超薄焊接垫片的单片厚度取决于支撑片的厚度和制备工艺，目前已实际生产得到厚度为40-300μm的超薄焊接垫片，可实验制备厚度为30-40μm的超薄焊接垫片。
为了保证支撑效果，支撑片的厚度为3-450μm，通常厚度在3微米以上，比如为3微米、5微米、8微米、10微米，50微米，100微米，等等。在本申请的一些实施例中，内部支撑结构(支撑片)为平整的板状(片状)结构。内部支撑结构(支撑片)不限于金属材质，还可以为其他能够满足焊接时支撑作用的其他材质。通常情况下，内部支撑结构(支撑片)的材质为金属，原则上，任何金属都可以选为支撑金属，常用支撑片的材质可以为铜及铜合金，镍合金、铁合金，铁镍合金，铁镍钴合金和不锈纲等。
支撑片可以为有孔的支撑片，甚至还可以是无孔的支撑片。有孔的支撑片是在无孔的支撑片上开孔形成的，孔的孔径小于200μm即可，孔的形状可以是任何形式，比如是三角形、正方形、长方形、六边形甚至是不规则的图形，孔的形状可根据具体的应用进行设计，孔的目数不做限定，可根据具体使用场景进行定制。相应的，有孔的支撑片的开孔方式可以采用冲压、模压或者激光打孔进行加工。有孔的支撑片还可以为网状支撑片或任何连续的支撑结构，作为一种实施方式，支撑片或支撑结构是由不同直经金属线编织或不同直经金属线和球形结构编织而成的网状支撑片。
通常情况下，焊料为焊锡材料。原则上，任何熔点低于支撑片金属的可焊材料都可以选为焊接金属，常用焊料选自Sn、Sn-Ag、Sn-Cu、Sn-Ag-Cu、Sn-Pb(Ag)、Sn-Bi、Sn-In或其他钎焊材料等合金系统中的一种。相应的，焊料液为Sn-Ag-Cu(锡-铝-铜)系统，Sn-Pb系统，Sn-Bi系统或Sn-In系统等。
在回流焊接的过程中，需要在一定工艺温度下，焊料层熔化、内部支撑结构(支撑片)不会熔化，为了保证超薄焊接垫片实现通常的回流焊接，内部支撑结构(支撑片)的液相线温度通常大于500℃，同时焊料层的固相线温度小于210℃，能够满足回流焊接的需求。
如图1所示，以内部支撑结构选用支撑片200为例，本申请实施例还提供一种上述的超薄焊接垫片的制备方法，其包括以下步骤：
步骤S1：将焊料加热至230-320℃熔融形成焊料液100。
步骤S2：将支撑片200进行表面处理工艺，具体过程包括依次进行的如下步骤：清洗液超声清洗、烘干、酸洗活化、水洗、IPA浸润和烘干，其中，清洗液选自IPA、乙醇、甲烷和丙酮等和其他金属清洗液中的一种；酸洗活化采用的酸洗活化液是各种有机酸或无机酸，或各种有机酸或无机酸的混合溶液。
然后将经过表面处理工艺后的支撑片200浸入焊料液100中，等待一定时间，一般是采用机械手夹持支撑片200，使支撑片200以一定的速度，比如1-24m/s，按垂直于焊料液液面的方向浸入焊料液100中，浸入时间可以根据不同的材质从1秒到几小时，比如1s-60min。在其他实施例中，还可以同时借助搅拌棒使焊料液100振动或者流动，亦或将支撑片200前后或左右移动，以保证焊料液100充分附着于支撑片200上。采用上述浇注工艺，确保了支撑片200与焊料液100的完全接触，而且焊料液100填满支撑片200的孔洞。
在上述过程中，可以将2片或多片支撑片叠合在一起同时浸入焊料液中，再取出、冷却，以制成比较厚的焊接垫片；
还可以将支撑片多次反复浸入焊料液中，再取出、冷却，以制成比较厚的焊接垫片；
还可以将2片或多片支撑片叠合在一起，多次反复浸入焊料液中，再取出、冷却，以制成比较厚的焊接垫片。
步骤S3：将复合支撑片300(表面附着有焊料液100的支撑片200)取出、冷却。
通常情况下，经过上述工艺，即可得到平整、均匀、无翘曲的超薄焊接垫片，满足高精密焊接的需求，无需辊压；在其他实施例中，还可以通过精密辊压机辊压成更平整、均匀、无翘曲的超薄焊接垫片。
步骤S4：根据应用需求，将超薄焊接垫片裁切成不同大小规格或不裁切；然后进行单独的包装，确保产品的平整性。
本申请实施例还提供一种基于上述的超薄焊接垫片的焊接方法，将超薄焊接垫片放置于待焊接的焊接面之间，一般是放置于待封装部件(比如待封装芯片)和基板之间，再进行回流焊接，形成封装结构。上述焊接方法不仅可以用于半导体器件的封装过程中，还可以用于其他电子器件的封装过程中，在此不做限制。比如在需要有大面积焊接的SMT制造过程中，可以采用上述焊接方法将模组片回流焊接于基板上形成封装结构。具体地，在绝缘栅双极型晶体管(IGBT，Insulated Gate Bipolar Transistor)模块封装中，采用上述焊接方法将多个芯片焊接于陶瓷基板上，散热焊接面积更大，形成绝缘栅双极晶体管(IGBT)模块。焊接面的表面一般为金属表面，比如，金属表面为铜、镍/金和其他可焊接金属中的一种。
在使用超薄焊接垫片进行焊接时，超薄焊接垫片可以单层使用，还可以将两层或者两层以上的超薄焊接垫片叠合在一起使用；也可以在制备超薄焊接垫片的过程中，制作成含有多层支撑片的结构。
本申请实施例还提供一种半导体器件，其包括采用上述的超薄焊接垫片焊接形成的封装结构。比如半导体器件为集成电路芯片封装，应用于芯片和载板，芯片和芯片，载板和载板，模组和模组，芯片和模组，载板和模组，以及芯片、模组、载板和散热片任何组合的焊接等；或者，半导体器件为集成电路芯片封装的散热，应用于芯片和散热板的焊接；又或者，半导体器件为绝缘栅双极晶体管(IGBT)模块或其他半导体器件。
需要说明的是，本申请实施例的焊接垫片的热涨冷缩系数(CTE)可以根据封装结构的需要，调整在支撑金属和焊锡的CTE之间任何点，以使焊接达到最佳可靠性。
以下结合实施例对本申请的特征和性能作进一步的详细描述。
实施例1
本实施例提供一种超薄焊接垫片，其采用以下制备方法制得：
(1)准备有孔的支撑片，支撑片长120mm、宽120mm，厚度为30微米，材质为镍Ni，孔的大小为40μm，孔间距为50μm；然后将支撑片经过表面处理工艺。
(2)将焊料Sn-Ag-Cu加热至280℃熔融形成焊料液。
(3)将经过表面处理工艺后的支撑片垂直浸入焊料液中1min。
(4)将表面附着有焊料液的支撑片取出、冷却，得到厚度60μm、平整、均匀、无翘曲的超薄焊接垫片。
实施例2
本实施例提供一种超薄焊接垫片，其采用以下制备方法制得：
(1)准备有孔的支撑片，支撑片长120mm、宽120mm，厚度为30微米，材质为铁Fe，孔的大小为40μm，孔间距为50μm；然后将支撑片经过表面处理工艺。
(2)将焊料Sn-Pb加热至240℃熔融形成焊料液。
(3)将经过表面处理工艺后的支撑片垂直浸入焊料液中2min。
(4)将表面附着有焊料液的支撑片取出、冷却，得到厚度为120μm的垫片。
(5)将垫片通过精密辊压机辊压成平整、均匀、无翘曲的超薄焊接垫片，其厚度为70μm。
实施例3
本实施例提供一种超薄焊接垫片，其采用以下制备方法制得：
(1)准备有孔的支撑片，支撑片长120mm、宽120mm，厚度为20微米，材质为铁镍合金，孔的大小为30μm，孔间距为40μm；然后将支撑片经过表面处理工艺。
(2)将焊料Sn-Ag-Cu加热至300℃熔融形成焊料液。
(3)将经过表面处理工艺后的支撑片垂直浸入焊料液中5min。
(4)将表面附着有焊料液的支撑片取出、冷却，得到厚度为50μm的垫片。
(5)将垫片通过精密辊压机辊压成平整、均匀、无翘曲的超薄焊接垫片，其厚度为40μm。
对比例1
本对比例提供一种嵌入了金属网的焊带，该焊带采用将金属网冷嵌压合进焊料材料中形成的，由于工艺的限制，该焊带的厚度为75微米，宽度为0.030英寸与4英寸之间，金属网为金属丝编织而成的金属网。
综上所述，本申请实施例的超薄焊接垫片及制备方法、焊接方法与半导体器件，该垫片平整、无翘曲，焊料均匀，单层厚度最小仅为30微米，能够满足高精密焊接的需求。
以上所述仅为本申请的实施例而已，并不用于限制本申请的保护范围，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (18)

1.一种超薄焊接垫片，其特征在于，其包括：内部支撑结构，以及覆盖于所述内部支撑结构表面的焊料层，所述焊料层是采用焊料液均匀附着于所述内部支撑结构的表面而形成的，所述焊料层的熔点低于所述内部支撑结构的熔点。
2.根据权利要求1所述的超薄焊接垫片，其特征在于，所述内部支撑结构为平整的支撑片；可选地，所述支撑片的厚度为3-450μm。
3.根据权利要求1或2所述的超薄焊接垫片，其特征在于，所述超薄焊接垫片为平整结构；可选地，所述超薄焊接垫片的单片厚度为10-1000μm。
4.根据权利要求1或2所述的超薄焊接垫片，其特征在于，所述内部支撑结构的材质为金属；可选地，所述内部支撑结构的材质为铜及铜合金，镍合金、铁合金，铁镍合金，铁镍钴合金和不锈纲中的一种。
5.根据权利要求2所述的超薄焊接垫片，其特征在于，所述支撑片为无孔的支撑片。
6.根据权利要求2所述的超薄焊接垫片，其特征在于，所述支撑片为有孔的支撑片，所述有孔的支撑片是在无孔的支撑片上开孔形成的。
7.根据权利要求6所述的超薄焊接垫片，其特征在于，所述孔的孔径小于200μm，所述孔的形状为三角形、正方形、长方形、六边形或不规则图形。
8.根据权利要求2所述的超薄焊接垫片，其特征在于，所述支撑片为网状支撑片或任何连续的支撑结构；可选地，所述支撑片或所述支撑结构是由不同直经金属线编织或不同直经金属线和球形结构编织而成的网状支撑片。
9.根据权利要求1所述的超薄焊接垫片，其特征在于，所述焊料为可焊材料；可选地，所述焊料选自锡和锡基焊料，铟和铟基焊料，镓和镓基焊料，锡铋焊料，锡铟焊料和其他钎焊材料中的一种。
10.一种如权利要求1至9中任一项所述的超薄焊接垫片的制备方法，其特征在于，其包括以下步骤：将经过表面处理工艺后的内部支撑结构浸入焊料液中，再取出、冷却。
11.根据权利要求10所述的超薄焊接垫片的制备方法，其特征在于，所述内部支撑结构为平整的支撑片，支撑片浸入焊料液的方式为：将所述支撑片以垂直于焊料液液面的方向插入所述焊料液中，浸入时间可以根据不同的材质从1秒到几小时；
和/或，支撑片的表面处理工艺包括依次进行的如下步骤：清洗液超声清洗、烘干、活化、水洗、溶剂浸润和烘干；可选地，所述清洗液选自IPA、乙醇、甲烷和丙酮和其他金属清洗液中的一种；所述活化采用的酸洗活化液是有机酸和/或无机酸。
12.根据权利要求11所述的超薄焊接垫片的制备方法，其特征在于，将2片或多片支撑片叠合在一起同时浸入焊料液中，再取出、冷却；
或者，将所述支撑片多次反复浸入焊料液中，再取出、冷却。
13.根据权利要求10所述的超薄焊接垫片的制备方法，其特征在于，还包括辊压步骤。
14.一种基于如权利要求1至9中任一项所述的超薄焊接垫片的焊接方法，其特征在于，将所述超薄焊接垫片放置于待焊接的焊接面之间，再进行回流焊接，形成封装结构。
15.根据权利要求14所述的焊接方法，其特征在于，将两层或者两层以上的所述超薄焊接垫片叠合在一起使用。
16.根据权利要求14所述的焊接方法，其特征在于，所述焊接面的表面为金属表面，可选地，所述金属表面为铜、镍/金和其他可焊接金属中的一种。
17.一种半导体器件，其特征在于，其包括采用如权利要求1至9中任一项所述的超薄焊接垫片焊接形成的封装结构。
18.根据权利要求17所述的半导体器件，其特征在于，所述半导体器件为集成电路芯片封装，应用于芯片和载板，芯片和芯片，载板和载板，模组和模组，芯片和模组，载板和模组，以及芯片、模组、载板和散热片任何组合的焊接中的一种；
或者，所述半导体器件为集成电路芯片封装的散热，应用于芯片和散热板的焊接；
或者，所述半导体器件为IGBT模块。
CN202011493022.8A 2020-12-16 2020-12-16 一种超薄焊接垫片及制备方法、焊接方法与半导体器件 Pending CN112605486A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202011493022.8A CN112605486A (zh) 2020-12-16 2020-12-16 一种超薄焊接垫片及制备方法、焊接方法与半导体器件
PCT/CN2021/137559 WO2022127748A1 (zh) 2020-12-16 2021-12-13 一种超薄焊接垫片及制备方法、焊接方法与半导体器件
US18/258,143 US20240051051A1 (en) 2020-12-16 2021-12-13 Ultra-thin soldering gasket and preparation method therefor, soldering method, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011493022.8A CN112605486A (zh) 2020-12-16 2020-12-16 一种超薄焊接垫片及制备方法、焊接方法与半导体器件

Publications (1)

Publication Number Publication Date
CN112605486A true CN112605486A (zh) 2021-04-06

Family

ID=75240524

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011493022.8A Pending CN112605486A (zh) 2020-12-16 2020-12-16 一种超薄焊接垫片及制备方法、焊接方法与半导体器件

Country Status (3)

Country Link
US (1) US20240051051A1 (zh)
CN (1) CN112605486A (zh)
WO (1) WO2022127748A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022127748A1 (zh) * 2020-12-16 2022-06-23 宁波施捷电子有限公司 一种超薄焊接垫片及制备方法、焊接方法与半导体器件
CN116900545A (zh) * 2023-09-13 2023-10-20 北京理工大学 用于快速瞬态液相连接的微合金化叠层焊片及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201711675U (zh) * 2010-08-20 2011-01-19 芯通科技（成都）有限公司 带有助焊剂涂层的预成形焊锡片
JP2012096237A (ja) * 2010-10-29 2012-05-24 Mitsubishi Alum Co Ltd フラックスレスろう付用アルミニウム合金ブレージングシートおよびアルミニウム材のフラックスレスろう付け方法
US20130136878A1 (en) * 2011-11-30 2013-05-30 Alfred Grant Elliot High Speed Low Temperature Method For Manufacturing And Repairing Semiconductor Processing Equipment And Equipment Produced Using Same
CN103659032A (zh) * 2012-09-05 2014-03-26 昆山市宏嘉焊锡制造有限公司 一种焊锡带
CN105537793A (zh) * 2016-01-15 2016-05-04 东南大学 一种功率模块焊接用焊片
CN106825999A (zh) * 2017-03-14 2017-06-13 武汉理工大学 一种泡沫金属复合焊料片的制备方法
CN107486651A (zh) * 2017-08-02 2017-12-19 中国电器科学研究院有限公司 一种低温焊料片的制备方法
CN108453414A (zh) * 2018-03-28 2018-08-28 武汉理工大学 一种Sn基复合焊料片的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53100152A (en) * 1977-02-15 1978-09-01 Hitachi Cable Ltd Composite soldering material and manufacture thereof
CN104625461B (zh) * 2014-12-30 2016-03-23 株洲南车时代电气股份有限公司 一种高性能预成型焊片及其焊接方法
CN109848611B (zh) * 2019-02-01 2020-09-08 武汉理工大学 一种基于多孔Ni/Cu合金的Sn基复合焊料片的制备方法
CN111020443A (zh) * 2019-12-26 2020-04-17 无锡市斯威克科技有限公司 一种专用于超薄光伏电池片焊接用的低熔点光伏焊带及其制备方法与应用
CN112605486A (zh) * 2020-12-16 2021-04-06 宁波施捷电子有限公司 一种超薄焊接垫片及制备方法、焊接方法与半导体器件

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201711675U (zh) * 2010-08-20 2011-01-19 芯通科技（成都）有限公司 带有助焊剂涂层的预成形焊锡片
JP2012096237A (ja) * 2010-10-29 2012-05-24 Mitsubishi Alum Co Ltd フラックスレスろう付用アルミニウム合金ブレージングシートおよびアルミニウム材のフラックスレスろう付け方法
US20130136878A1 (en) * 2011-11-30 2013-05-30 Alfred Grant Elliot High Speed Low Temperature Method For Manufacturing And Repairing Semiconductor Processing Equipment And Equipment Produced Using Same
CN103659032A (zh) * 2012-09-05 2014-03-26 昆山市宏嘉焊锡制造有限公司 一种焊锡带
CN105537793A (zh) * 2016-01-15 2016-05-04 东南大学 一种功率模块焊接用焊片
CN106825999A (zh) * 2017-03-14 2017-06-13 武汉理工大学 一种泡沫金属复合焊料片的制备方法
CN107486651A (zh) * 2017-08-02 2017-12-19 中国电器科学研究院有限公司 一种低温焊料片的制备方法
CN108453414A (zh) * 2018-03-28 2018-08-28 武汉理工大学 一种Sn基复合焊料片的制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022127748A1 (zh) * 2020-12-16 2022-06-23 宁波施捷电子有限公司 一种超薄焊接垫片及制备方法、焊接方法与半导体器件
CN116900545A (zh) * 2023-09-13 2023-10-20 北京理工大学 用于快速瞬态液相连接的微合金化叠层焊片及其制备方法
CN116900545B (zh) * 2023-09-13 2023-12-08 北京理工大学 用于快速瞬态液相连接的微合金化叠层焊片及其制备方法

Also Published As

Publication number Publication date
WO2022127748A1 (zh) 2022-06-23
US20240051051A1 (en) 2024-02-15

Similar Documents

Publication Publication Date Title
JP3385872B2 (ja) はんだ供給法およびはんだ供給装置
TWI300619B (en) Electronic device
JP3688429B2 (ja) 電子部品実装用基板および電子部品実装基板
WO2022127748A1 (zh) 一种超薄焊接垫片及制备方法、焊接方法与半导体器件
EP2157605B1 (en) Electronic part apparatus and process for manufacturing the same
US20110096507A1 (en) Microelectronic thermal interface
JPH07302797A (ja) 半導体素子ならびにその製造および使用方法
WO2014103934A1 (ja) パワーモジュール
JP2007268613A (ja) 拡散はんだ付け方法
JP2010516478A (ja) 高温はんだ材料
DE102008037835B4 (de) Elektronische Komponente mit Pufferschicht, Herstellungsverfahren dafür und Halbleiteranordnung mit Puffermitteln
CN114029573B (zh) 一种石墨烯薄膜表面超薄软钎焊改性层的制备方法
JP2008238233A (ja) 非鉛系の合金接合材、接合方法および接合体
EP0365275A2 (en) A composite material heat-dissipating member for a semiconductor element and method of its fabrication
JPH0238309B2 (zh)
KR20110100153A (ko) 파워 모듈용 기판, 파워 모듈용 기판의 제조 방법, 히트싱크가 부착된 파워 모듈용 기판 및 파워 모듈
JP5376356B2 (ja) 電子素子の実装方法および該実装方法によって実装された電子部品
KR20110100152A (ko) 파워 모듈용 기판, 파워 모듈용 기판의 제조 방법, 히트싱크가 부착된 파워 모듈용 기판 및 파워 모듈
JP4882596B2 (ja) パワー素子搭載用基板およびパワー素子搭載用基板の製造方法並びにパワーモジュール
JP2002009190A (ja) セラミック基板及びその製造方法
JP2017168635A (ja) パワーモジュール用基板及びパワーモジュールの製造方法
JP4364023B2 (ja) 蓋体およびこれを用いた電子装置
JP4332047B2 (ja) 電子装置
KR20090009414A (ko) 솔더가 코팅된 전해 도금 범프 및 이를 사용하는 플립칩접합 방법
CN111699067B (zh) 用于制造结构单元的方法以及用于连接构件与这种结构单元的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination