CN112445082B - 曝光装置以及物品制造方法 - Google Patents

曝光装置以及物品制造方法 Download PDF

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Publication number
CN112445082B
CN112445082B CN202010922291.5A CN202010922291A CN112445082B CN 112445082 B CN112445082 B CN 112445082B CN 202010922291 A CN202010922291 A CN 202010922291A CN 112445082 B CN112445082 B CN 112445082B
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CN
China
Prior art keywords
concave mirror
optical system
substrate
mask
projection optical
Prior art date
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CN202010922291.5A
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English (en)
Chinese (zh)
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CN112445082A (zh
Inventor
河野道生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN112445082A publication Critical patent/CN112445082A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/082—Catadioptric systems using three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202010922291.5A 2019-09-04 2020-09-04 曝光装置以及物品制造方法 Active CN112445082B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-161464 2019-09-04
JP2019161464A JP7357488B2 (ja) 2019-09-04 2019-09-04 露光装置、および物品製造方法

Publications (2)

Publication Number Publication Date
CN112445082A CN112445082A (zh) 2021-03-05
CN112445082B true CN112445082B (zh) 2024-03-19

Family

ID=74735493

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010922291.5A Active CN112445082B (zh) 2019-09-04 2020-09-04 曝光装置以及物品制造方法

Country Status (4)

Country Link
JP (1) JP7357488B2 (https=)
KR (1) KR102747768B1 (https=)
CN (1) CN112445082B (https=)
TW (1) TWI825339B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113296342B (zh) * 2021-05-21 2024-03-12 光感(上海)科技有限公司 一种光学投影系统
JP7614962B2 (ja) * 2021-07-08 2025-01-16 キヤノン株式会社 投影光学系、露光装置、および物品の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577102A (zh) * 2003-06-30 2005-02-09 Asml控股股份有限公司 用于平板显示器的像差可校正大视场投影光学系统
JP2008089832A (ja) * 2006-09-29 2008-04-17 Canon Inc 露光装置
CN101625455A (zh) * 2008-07-09 2010-01-13 佳能株式会社 投影光学系统、曝光装置以及器件制造方法
JP2010135479A (ja) * 2008-12-03 2010-06-17 Canon Inc 走査型投影露光装置
TW201723678A (zh) * 2015-12-25 2017-07-01 Canon Kk 評價方法、曝光方法、及物品的製造方法
CN107436539A (zh) * 2016-05-25 2017-12-05 佳能株式会社 曝光装置以及物品的制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6081578A (en) 1997-11-07 2000-06-27 U.S. Philips Corporation Three-mirror system for lithographic projection, and projection apparatus comprising such a mirror system
JP5196869B2 (ja) 2007-05-15 2013-05-15 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
KR101010605B1 (ko) 2007-10-15 2011-01-24 재단법인 포항산업과학연구원 Ｕ형 벤딩 파이프의 자동 열처리장치
JP5595001B2 (ja) * 2009-10-06 2014-09-24 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
JP6410406B2 (ja) 2012-11-16 2018-10-24 キヤノン株式会社 投影光学系、露光装置および物品の製造方法
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
JP2016161923A (ja) 2015-03-05 2016-09-05 キヤノン株式会社 露光装置及び物品の製造方法
US10025079B2 (en) * 2015-09-28 2018-07-17 Kenneth Carlisle Johnson Actinic, spot-scanning microscope for EUV mask inspection and metrology

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577102A (zh) * 2003-06-30 2005-02-09 Asml控股股份有限公司 用于平板显示器的像差可校正大视场投影光学系统
JP2008089832A (ja) * 2006-09-29 2008-04-17 Canon Inc 露光装置
CN101625455A (zh) * 2008-07-09 2010-01-13 佳能株式会社 投影光学系统、曝光装置以及器件制造方法
JP2010135479A (ja) * 2008-12-03 2010-06-17 Canon Inc 走査型投影露光装置
TW201723678A (zh) * 2015-12-25 2017-07-01 Canon Kk 評價方法、曝光方法、及物品的製造方法
CN107436539A (zh) * 2016-05-25 2017-12-05 佳能株式会社 曝光装置以及物品的制造方法

Also Published As

Publication number Publication date
CN112445082A (zh) 2021-03-05
JP7357488B2 (ja) 2023-10-06
KR20210028574A (ko) 2021-03-12
KR102747768B1 (ko) 2024-12-31
TW202111382A (zh) 2021-03-16
JP2021039282A (ja) 2021-03-11
TWI825339B (zh) 2023-12-11

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