KR102747768B1 - 노광 장치 및 물품제조방법 - Google Patents

노광 장치 및 물품제조방법 Download PDF

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Publication number
KR102747768B1
KR102747768B1 KR1020200107614A KR20200107614A KR102747768B1 KR 102747768 B1 KR102747768 B1 KR 102747768B1 KR 1020200107614 A KR1020200107614 A KR 1020200107614A KR 20200107614 A KR20200107614 A KR 20200107614A KR 102747768 B1 KR102747768 B1 KR 102747768B1
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KR
South Korea
Prior art keywords
concave mirror
substrate
mask
optical system
projection optical
Prior art date
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Application number
KR1020200107614A
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English (en)
Korean (ko)
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KR20210028574A (ko
Inventor
미치오 코노
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20210028574A publication Critical patent/KR20210028574A/ko
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Publication of KR102747768B1 publication Critical patent/KR102747768B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/082—Catadioptric systems using three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020200107614A 2019-09-04 2020-08-26 노광 장치 및 물품제조방법 Active KR102747768B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-161464 2019-09-04
JP2019161464A JP7357488B2 (ja) 2019-09-04 2019-09-04 露光装置、および物品製造方法

Publications (2)

Publication Number Publication Date
KR20210028574A KR20210028574A (ko) 2021-03-12
KR102747768B1 true KR102747768B1 (ko) 2024-12-31

Family

ID=74735493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200107614A Active KR102747768B1 (ko) 2019-09-04 2020-08-26 노광 장치 및 물품제조방법

Country Status (4)

Country Link
JP (1) JP7357488B2 (https=)
KR (1) KR102747768B1 (https=)
CN (1) CN112445082B (https=)
TW (1) TWI825339B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113296342B (zh) * 2021-05-21 2024-03-12 光感(上海)科技有限公司 一种光学投影系统
JP7614962B2 (ja) * 2021-07-08 2025-01-16 キヤノン株式会社 投影光学系、露光装置、および物品の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001507873A (ja) 1997-11-07 2001-06-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ リソグラフィ投影用の３ミラー光学系及びこのミラー光学系を具える投影装置
JP2005025199A (ja) * 2003-06-30 2005-01-27 Asml Holding Nv フラットパネルディスプレイ製造用露光システムおよびフラットパネルディスプレイ製造用ユニット拡大環状光学系
JP2008286888A (ja) * 2007-05-15 2008-11-27 Canon Inc 露光装置
JP2014103171A (ja) 2012-11-16 2014-06-05 Canon Inc 投影光学系、露光装置および物品の製造方法
JP2016161923A (ja) 2015-03-05 2016-09-05 キヤノン株式会社 露光装置及び物品の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008089832A (ja) 2006-09-29 2008-04-17 Canon Inc 露光装置
KR101010605B1 (ko) 2007-10-15 2011-01-24 재단법인 포항산업과학연구원 Ｕ형 벤딩 파이프의 자동 열처리장치
JP5398185B2 (ja) * 2008-07-09 2014-01-29 キヤノン株式会社 投影光学系、露光装置およびデバイス製造方法
JP2010135479A (ja) * 2008-12-03 2010-06-17 Canon Inc 走査型投影露光装置
JP5595001B2 (ja) * 2009-10-06 2014-09-24 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
US10025079B2 (en) * 2015-09-28 2018-07-17 Kenneth Carlisle Johnson Actinic, spot-scanning microscope for EUV mask inspection and metrology
JP6661371B2 (ja) * 2015-12-25 2020-03-11 キヤノン株式会社 評価方法、露光方法、および物品の製造方法
JP6748482B2 (ja) * 2016-05-25 2020-09-02 キヤノン株式会社 露光装置、および、物品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001507873A (ja) 1997-11-07 2001-06-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ リソグラフィ投影用の３ミラー光学系及びこのミラー光学系を具える投影装置
JP2005025199A (ja) * 2003-06-30 2005-01-27 Asml Holding Nv フラットパネルディスプレイ製造用露光システムおよびフラットパネルディスプレイ製造用ユニット拡大環状光学系
JP2008286888A (ja) * 2007-05-15 2008-11-27 Canon Inc 露光装置
JP2014103171A (ja) 2012-11-16 2014-06-05 Canon Inc 投影光学系、露光装置および物品の製造方法
JP2016161923A (ja) 2015-03-05 2016-09-05 キヤノン株式会社 露光装置及び物品の製造方法

Also Published As

Publication number Publication date
CN112445082A (zh) 2021-03-05
JP7357488B2 (ja) 2023-10-06
KR20210028574A (ko) 2021-03-12
TW202111382A (zh) 2021-03-16
CN112445082B (zh) 2024-03-19
JP2021039282A (ja) 2021-03-11
TWI825339B (zh) 2023-12-11

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