CN112425152B - 摄像装置及电子设备 - Google Patents

摄像装置及电子设备 Download PDF

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Publication number
CN112425152B
CN112425152B CN201980046607.4A CN201980046607A CN112425152B CN 112425152 B CN112425152 B CN 112425152B CN 201980046607 A CN201980046607 A CN 201980046607A CN 112425152 B CN112425152 B CN 112425152B
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China
Prior art keywords
transistor
circuit
potential
layer
electrically connected
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Active
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CN201980046607.4A
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English (en)
Chinese (zh)
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CN112425152A (zh
Inventor
高桥圭
楠本直人
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202510125274.1A priority Critical patent/CN119946458A/zh
Publication of CN112425152A publication Critical patent/CN112425152A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
CN201980046607.4A 2018-07-27 2019-07-18 摄像装置及电子设备 Active CN112425152B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202510125274.1A CN119946458A (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018141605 2018-07-27
JP2018-141605 2018-07-27
PCT/IB2019/056134 WO2020021398A1 (ja) 2018-07-27 2019-07-18 撮像装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202510125274.1A Division CN119946458A (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Publications (2)

Publication Number Publication Date
CN112425152A CN112425152A (zh) 2021-02-26
CN112425152B true CN112425152B (zh) 2025-02-28

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980046607.4A Active CN112425152B (zh) 2018-07-27 2019-07-18 摄像装置及电子设备
CN202510125274.1A Pending CN119946458A (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202510125274.1A Pending CN119946458A (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Country Status (5)

Country Link
US (2) US11948959B2 (https=)
JP (4) JP7336441B2 (https=)
KR (1) KR102882109B1 (https=)
CN (2) CN112425152B (https=)
WO (1) WO2020021398A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2021165781A1 (ja) 2020-02-20 2021-08-26 株式会社半導体エネルギー研究所 撮像装置、電子機器および移動体
EP4446858B1 (en) * 2023-04-13 2025-10-08 Imec VZW Charge sensor circuit, a detector array and a method for charge-based sensing
JP2024169345A (ja) * 2023-05-23 2024-12-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017022706A (ja) * 2015-07-07 2017-01-26 株式会社半導体エネルギー研究所 撮像装置およびその動作方法

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US7652704B2 (en) * 2004-08-25 2010-01-26 Aptina Imaging Corporation Pixel for boosting pixel reset voltage
EP2494597A4 (en) 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101280743B1 (ko) * 2010-04-07 2013-07-05 샤프 가부시키가이샤 회로 기판 및 표시 장치
KR101343293B1 (ko) * 2010-04-30 2013-12-18 샤프 가부시키가이샤 회로 기판 및 표시 장치
JP2013197697A (ja) 2012-03-16 2013-09-30 Sony Corp 固体撮像装置及び電子機器
JP6495602B2 (ja) * 2013-09-13 2019-04-03 株式会社半導体エネルギー研究所 発光装置
JP2015056878A (ja) * 2013-09-13 2015-03-23 株式会社東芝 固体撮像装置
US9397637B2 (en) * 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
CN105742303B (zh) * 2014-12-26 2020-08-25 松下知识产权经营株式会社 摄像装置
US9876946B2 (en) * 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10896923B2 (en) * 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
US9967504B1 (en) * 2017-04-06 2018-05-08 Omnivision Technologies, Inc. Imaging sensor with boosted photodiode drive
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2017022706A (ja) * 2015-07-07 2017-01-26 株式会社半導体エネルギー研究所 撮像装置およびその動作方法

Also Published As

Publication number Publication date
JP7524430B2 (ja) 2024-07-29
CN112425152A (zh) 2021-02-26
US20240222411A1 (en) 2024-07-04
JP7755695B2 (ja) 2025-10-16
CN119946458A (zh) 2025-05-06
WO2020021398A1 (ja) 2020-01-30
JP2023144118A (ja) 2023-10-06
US20210273007A1 (en) 2021-09-02
KR102882109B1 (ko) 2025-11-05
JP7336441B2 (ja) 2023-08-31
JP2025188099A (ja) 2025-12-25
KR20210040363A (ko) 2021-04-13
JP2024147701A (ja) 2024-10-16
JPWO2020021398A1 (ja) 2021-08-26
US11948959B2 (en) 2024-04-02

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