KR102882109B1 - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기

Info

Publication number
KR102882109B1
KR102882109B1 KR1020217001985A KR20217001985A KR102882109B1 KR 102882109 B1 KR102882109 B1 KR 102882109B1 KR 1020217001985 A KR1020217001985 A KR 1020217001985A KR 20217001985 A KR20217001985 A KR 20217001985A KR 102882109 B1 KR102882109 B1 KR 102882109B1
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KR
South Korea
Prior art keywords
transistor
potential
circuit
layer
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217001985A
Other languages
English (en)
Korean (ko)
Other versions
KR20210040363A (ko
Inventor
게이 다카하시
나오토 구스모토
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20210040363A publication Critical patent/KR20210040363A/ko
Application granted granted Critical
Publication of KR102882109B1 publication Critical patent/KR102882109B1/ko
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
KR1020217001985A 2018-07-27 2019-07-18 촬상 장치 및 전자 기기 Active KR102882109B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018141605 2018-07-27
JPJP-P-2018-141605 2018-07-27
PCT/IB2019/056134 WO2020021398A1 (ja) 2018-07-27 2019-07-18 撮像装置および電子機器

Publications (2)

Publication Number Publication Date
KR20210040363A KR20210040363A (ko) 2021-04-13
KR102882109B1 true KR102882109B1 (ko) 2025-11-05

Family

ID=69182020

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217001985A Active KR102882109B1 (ko) 2018-07-27 2019-07-18 촬상 장치 및 전자 기기

Country Status (5)

Country Link
US (2) US11948959B2 (https=)
JP (4) JP7336441B2 (https=)
KR (1) KR102882109B1 (https=)
CN (2) CN112425152B (https=)
WO (1) WO2020021398A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2021165781A1 (ja) 2020-02-20 2021-08-26 株式会社半導体エネルギー研究所 撮像装置、電子機器および移動体
EP4446858B1 (en) * 2023-04-13 2025-10-08 Imec VZW Charge sensor circuit, a detector array and a method for charge-based sensing
JP2024169345A (ja) * 2023-05-23 2024-12-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511255A (ja) * 2004-08-25 2008-04-10 マイクロン テクノロジー インコーポレイテッド 画素リセット電圧昇圧用画素
JP2017034677A (ja) * 2015-08-03 2017-02-09 株式会社半導体エネルギー研究所 撮像装置および電子機器

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Publication number Priority date Publication date Assignee Title
EP2494597A4 (en) 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101280743B1 (ko) * 2010-04-07 2013-07-05 샤프 가부시키가이샤 회로 기판 및 표시 장치
KR101343293B1 (ko) * 2010-04-30 2013-12-18 샤프 가부시키가이샤 회로 기판 및 표시 장치
JP2013197697A (ja) 2012-03-16 2013-09-30 Sony Corp 固体撮像装置及び電子機器
JP6495602B2 (ja) * 2013-09-13 2019-04-03 株式会社半導体エネルギー研究所 発光装置
JP2015056878A (ja) * 2013-09-13 2015-03-23 株式会社東芝 固体撮像装置
US9397637B2 (en) * 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
CN105742303B (zh) * 2014-12-26 2020-08-25 松下知识产权经营株式会社 摄像装置
TWI738569B (zh) * 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
US10896923B2 (en) * 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
US9967504B1 (en) * 2017-04-06 2018-05-08 Omnivision Technologies, Inc. Imaging sensor with boosted photodiode drive
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511255A (ja) * 2004-08-25 2008-04-10 マイクロン テクノロジー インコーポレイテッド 画素リセット電圧昇圧用画素
JP2017034677A (ja) * 2015-08-03 2017-02-09 株式会社半導体エネルギー研究所 撮像装置および電子機器

Also Published As

Publication number Publication date
JP7524430B2 (ja) 2024-07-29
CN112425152A (zh) 2021-02-26
CN112425152B (zh) 2025-02-28
US20240222411A1 (en) 2024-07-04
JP7755695B2 (ja) 2025-10-16
CN119946458A (zh) 2025-05-06
WO2020021398A1 (ja) 2020-01-30
JP2023144118A (ja) 2023-10-06
US20210273007A1 (en) 2021-09-02
JP7336441B2 (ja) 2023-08-31
JP2025188099A (ja) 2025-12-25
KR20210040363A (ko) 2021-04-13
JP2024147701A (ja) 2024-10-16
JPWO2020021398A1 (ja) 2021-08-26
US11948959B2 (en) 2024-04-02

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