CN119946458A - 摄像装置及电子设备 - Google Patents

摄像装置及电子设备 Download PDF

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Publication number
CN119946458A
CN119946458A CN202510125274.1A CN202510125274A CN119946458A CN 119946458 A CN119946458 A CN 119946458A CN 202510125274 A CN202510125274 A CN 202510125274A CN 119946458 A CN119946458 A CN 119946458A
Authority
CN
China
Prior art keywords
transistor
potential
layer
pixel
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202510125274.1A
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English (en)
Chinese (zh)
Inventor
高桥圭
楠本直人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN119946458A publication Critical patent/CN119946458A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
CN202510125274.1A 2018-07-27 2019-07-18 摄像装置及电子设备 Pending CN119946458A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018141605 2018-07-27
JP2018-141605 2018-07-27
PCT/IB2019/056134 WO2020021398A1 (ja) 2018-07-27 2019-07-18 撮像装置および電子機器
CN201980046607.4A CN112425152B (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980046607.4A Division CN112425152B (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Publications (1)

Publication Number Publication Date
CN119946458A true CN119946458A (zh) 2025-05-06

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN202510125274.1A Pending CN119946458A (zh) 2018-07-27 2019-07-18 摄像装置及电子设备
CN201980046607.4A Active CN112425152B (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201980046607.4A Active CN112425152B (zh) 2018-07-27 2019-07-18 摄像装置及电子设备

Country Status (5)

Country Link
US (2) US11948959B2 (https=)
JP (4) JP7336441B2 (https=)
KR (1) KR102882109B1 (https=)
CN (2) CN119946458A (https=)
WO (1) WO2020021398A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器
KR20220142457A (ko) 2020-02-20 2022-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 전자 기기, 및 이동체
EP4446858B1 (en) * 2023-04-13 2025-10-08 Imec VZW Charge sensor circuit, a detector array and a method for charge-based sensing
JP2024169345A (ja) * 2023-05-23 2024-12-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652704B2 (en) * 2004-08-25 2010-01-26 Aptina Imaging Corporation Pixel for boosting pixel reset voltage
EP2494597A4 (en) 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
US8581257B2 (en) 2010-04-07 2013-11-12 Sharp Kabushiki Kaisha Circuit board and display device
JP5275515B2 (ja) 2010-04-30 2013-08-28 シャープ株式会社 回路基板および表示装置
JP2013197697A (ja) 2012-03-16 2013-09-30 Sony Corp 固体撮像装置及び電子機器
JP6495602B2 (ja) * 2013-09-13 2019-04-03 株式会社半導体エネルギー研究所 発光装置
JP2015056878A (ja) * 2013-09-13 2015-03-23 株式会社東芝 固体撮像装置
US9397637B2 (en) * 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
CN111968998B (zh) * 2014-12-26 2024-12-13 松下知识产权经营株式会社 摄像装置
TWI713367B (zh) * 2015-07-07 2020-12-11 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
US9876946B2 (en) * 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10896923B2 (en) * 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
US9967504B1 (en) * 2017-04-06 2018-05-08 Omnivision Technologies, Inc. Imaging sensor with boosted photodiode drive
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器

Also Published As

Publication number Publication date
JPWO2020021398A1 (ja) 2021-08-26
CN112425152A (zh) 2021-02-26
WO2020021398A1 (ja) 2020-01-30
KR102882109B1 (ko) 2025-11-05
JP7336441B2 (ja) 2023-08-31
US11948959B2 (en) 2024-04-02
US20240222411A1 (en) 2024-07-04
JP7755695B2 (ja) 2025-10-16
JP2023144118A (ja) 2023-10-06
US20210273007A1 (en) 2021-09-02
JP7524430B2 (ja) 2024-07-29
JP2024147701A (ja) 2024-10-16
KR20210040363A (ko) 2021-04-13
JP2025188099A (ja) 2025-12-25
CN112425152B (zh) 2025-02-28

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